Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
  • H10K59/10—OLED displays
  • H10K59/221—Static displays, e.g. displaying permanent logos
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/80—Constructional details
  • H10K50/805—Electrodes
• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F21—LIGHTING
  • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
  • F21Y2105/00—Planar light sources
• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F21—LIGHTING
  • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
  • F21Y2115/00—Light-generating elements of semiconductor light sources
  • F21Y2115/10—Light-emitting diodes [LED]
  • F21Y2115/15—Organic light-emitting diodes [OLED]

Definitions

• the present invention generally relates to organic light emitting diodes. It receives for advantageous application a system of electrical connectivity by means of electrical tracks for the purpose of addressing organic light emitting diodes.
• a light-emitting diode is a semiconductor with physical properties such that the light-emitting diode has the ability to directly convert electricity into light, while being unrivaled efficiency in terms of energy consumption.
• Light-emitting diode illumination allows a homogeneous distribution of the light beam; this lighting can especially be very close to the light of day.
• This separation can be ensured firstly by chemical etching and / or laser ablation of the first electrode deposited on a glass substrate for example, and secondly by the organic layers deposited between the anode and the cathode.
• the shape of the "OLED" type light sources is defined by metal stencils (masks), in particular for the deposition of the organic layers and the deposition of the metal cathode.
• the active surfaces of organic light-emitting diodes always have a full-surface light.
• the electrical contact system is provided by anode and cathode pads.
• an electrical connection architecture in series or in parallel is used.
• a so-called "active" matrix is used in reference to a technique for addressing elementary light sources, that is to say how the electrical information is transported to each elementary light source. With this type of configuration, each elementary light source is controlled independently of the others.
• the manufacturing process begins with the realization of circuits that will allow to supply power to the organic light emitting diodes. Then, the organic layers are deposited on the matrix to form an organic diode on each elementary light source.
• the present invention solves all or at least some of the disadvantages of current techniques.
• the present invention also proposes a device comprising at least two organic light-emitting diodes comprising an electrical connection system optimizing the space used, while limiting the effects of the electrical conductivity of the connecting tracks.
• the present invention relates to a device comprising at least two organic light-emitting diodes comprising, on a substrate, a lower layer in which at least a first electrode is located, an organic layer positioned above the lower layer and a layer at least partially positioned on the organic layer and wherein is located at least in part, for each diode, a second electrode.
• the device comprises:
• a first bilayer stack comprising a first insulating layer and a first conductive layer; said stack being configured so that the first insulating layer at least partially covers the upper layer so as to leave exposed, for each diode, a portion protruding from the upper layer forming the second electrode of each diode, and in that that at least the first conductive layer, while being electrically isolated from the other diodes, covers at least partially at a time: the first insulating layer, at least the projecting portion of at least a first diode not covered by the first insulating layer; and a first isolated area; said first insulated area, partly covered by the first conductive layer, forming a contact recovery for said first diode; a second bilayer stack comprising a second insulating layer and a second conductive layer; said stack being configured so that the second insulating layer at least partially covers at least the first conductive layer, and in that at least the second conductive layer, while being electrically isolated from the first diode, at least partially overlaps with both:
• the method according to the invention comprises forming an isolated area of the lower layer relative to remaining areas of the lower layer.
• the present invention also relates to a method of producing a device comprising at least two organic electroluminescent diodes comprising the formation of a lower layer in which at least a first electrode is located on a substrate.
• the method comprises the following steps:
• an upper layer positioned at least partially on the organic layer, said upper layer comprising at least one second electrode for each of the diodes,
• first bilayer stack comprising a first insulating layer and a first conductive layer; said stack being configured so that the first insulating layer at least partially covers the upper layer so as to leave exposed, for each diode, a portion protruding from the upper layer forming the second electrode of each diode, and in that that at least the first conductive layer, while being electrically isolated from the other diodes, covers at least in part at a time: the first insulating layer, at least the projecting portion of at least a first diode not covered by the first insulating layer and a first isolated area; said first insulated area, covered by the first conductive layer, forming a contact recovery for said first diode,
• a second bilayer stack comprising a second insulating layer and a second conductive layer; said stack being configured so that the second insulating layer at least partially covers at least the first conductive layer, and in that at least the second conductive layer, while being electrically isolated from the first diode, at least partially overlaps with both: the second insulating layer, at least the projecting portion of at least a second diode not covered either by the first insulating layer, or by the second insulating layer and a second insulated zone; said second insulated area, covered by the second conductive layer, forming a contact recovery for said second diode.
• the present invention proposes a simple and inexpensive elementary light source addressing method which, advantageously thanks to laser irradiation etching, avoids the problems inherent in organic light-emitting diode manufacturing processes (sealing problems of the electroluminescent light-emitting diodes). organic layers during wet etching, short circuit problems, etc.).
• this method makes it possible to produce an organic light-emitting diode which optimizes the size and more specifically the architecture of the addressing tracks of elementary light sources by the superposition of conductive layers electrically separated by insulating intermediate layers.
• FIG. 1 represents a schematic view in longitudinal section of a stack of layers forming an organic light emission device according to the prior art.
• FIG. 2 represents a schematic view in longitudinal section of a stack of layers according to one embodiment of the invention, comprising a laser-irradiated lower layer, an organic layer and an upper layer.
• the etching of the lower layer forms a trench separating an isolated area from the remaining areas of the lower layer.
• FIG. 3 illustrates a schematic view from above of the stack of layers.
• the upper layer comprises a plurality of distinct zones forming elementary light sources in the form of organic light-emitting diodes.
• FIG. 4 illustrates a schematic view from above of the formation of a first insulating layer covering a portion of the stack of layers.
• FIG. 5 illustrates a schematic view from above of the formation of a first conductive layer covering at least partly the first insulating layer.
• FIG. 6 illustrates a schematic view from above of the formation of a second insulating layer covering at least partly the first conductive layer.
• FIG. 7 illustrates a schematic view from above of the formation of a second conductive layer covering at least partly the second insulating layer.
• FIG. 8 illustrates a schematic view from above of the formation of a third insulating layer covering at least partly the second conductive layer.
• FIG. 9 illustrates a schematic view from above of the formation of a third conductive layer covering at least partly the third insulating layer.
• FIG. 10 illustrates a schematic view from above of a step of placing a cover over the stack of layers; said cover being previously coated with a layer of adhesive and comprising at least one through opening, giving direct access to certain layers of the stack.
• the terms "on” or “above” do not necessarily mean “in contact with”.
• the deposition of a layer on another layer does not necessarily mean that the two layers are directly in contact with each other but that means that one of the layers at least partially covers the other being either directly in contact with it, or being separated from it by a film, another layer or another element.
• a layer may comprise a plurality of layers.
• the term "layer” does not necessarily mean a full plate distribution on the substrate.
• the present invention is applicable both for the top-emitting devices (in English “top emission”) and for the devices to emission down (in English “bottom emission”).
• the device comprises at least a third diode.
• the device comprises a third bilayer stack comprising a third insulating layer and a third conductive layer; said third stack being configured so that the third insulating layer partly covers at least the second conductive layer, and in that at least the third conductive layer, while being electrically isolated from the other diodes, at least partially overlaps with both: the third insulating layer, at least the projecting portion of at least a third diode not covered either by the first insulating layer, by the second insulating layer, or by the third insulating layer and a third isolated zone; said third isolated zone, covered by the third conductive layer, forming a contact recovery for said third diode.
• the first conductive layer or the second conductive layer covers the projecting portion of the third diode not covered either by the first insulating layer, or by the second insulating layer.
• the patterns of the second electrodes of each diode are configured so as to be aligned.
• the layers of the plurality of insulating layers are superposable and of the same size.
• Each conductive layer is preferably deposited so as to form lateral projections; said projections being configured to be in electrical continuity on the one hand with a portion of the projecting portion of at least one diode and on the other hand with one of the plurality of isolated areas.
• each overlapping portion of each diode is covered by one of the conductive layers of one of the two-layer stacks.
• the device comprises a cover provided with at least one through opening; said opening being positioned so as to allow access to each of the contact occasions of each diode formed by each of the layers conductors each covering one of the plurality of isolated areas and contacting the second electrode.
• At least one of the insulating layers comprises at least one organic layer and / or at least one inorganic layer.
• the trench has a closed contour transversely to the thickness.
• the organic layer is positioned in part at least on the isolated area.
• the substrate comprises a material selected from glass, metal, plastic, fabric or paper.
• the step of forming at least one additional bilayer stack is repeated until each overflowing portion of each diode is covered by one of the conductive layers. one of the two-layer stacks.
• each insulating layer of the succession of bilayer stacks comprises a masking step common to each of the insulating layers.
• each conductive layer of the succession of bilayer stacks comprises a deposition performed so as to form lateral projections; said projections being configured to be in electrical continuity on the one hand with a portion of the projecting portion of at least one diode and on the other hand with one of the plurality of isolated areas.
• the formation of at least one of the insulating layers is carried out by liquid, thermal evaporation or chemical deposition.
• the formation of at least one of the conductive layers is carried out by thermal evaporation, cathodic sputtering, atomic layer deposition, chemical vapor deposition.
• the formation of the organic layer is carried out by thermal evaporation, cathodic sputtering, atomic layer deposition, chemical vapor deposition.
• the formation of the plurality of isolated areas of the lower layer is performed by etching the lower layer so as to form a trench separating said isolated areas of the remaining areas of the lower layer; said trench having a depth equal to the thickness of said lower layer.
• a step is made to place a cover over at least the last bilayer stack; said hood being previously coated with a layer of adhesive and having at least one through opening; said opening being positioned so as to allow access to each of the contacts of contact of each diode formed by each of the conductive layers each covering one of the plurality of isolated areas and the resumption of contact of the first electrode.
• the purpose of the following method is to provide an organic light emitting device comprising an electrical connection system making it possible to optimize the addressing of elementary light sources, while allowing a small space requirement.
• a stack of layers is formed on a substrate 100.
• a lower layer 200 is first deposited on the substrate 100.
• An organic layer 300 is then deposited so as to cover part of the lower layer 200.
• the lower layer 200 protrudes laterally from the organic layer 300.
• the lower layer 200 has a portion not covered by the organic layer. 300.
• An upper layer 500 is deposited so as to at least partially cover the organic layer 300.
• the upper layer 500 covers the surface of the organic layer 300, without being in contact with the lower layer 200.
• the upper layer 500 s extends beyond the organic layer 300 as illustrated in FIG.
• the upper layer 500 protrudes laterally from the stack of layers.
• the projecting portion of the lower layer 200 and the projecting portion of the upper layer 500 are neither superimposed nor in contact. They may be located on opposite edges of the stack of layers.
• the lower layer 200 forms a first electrode, preferably the anode.
• An electrical contact recovery 400 is typically made from said lower layer 200. This contact recovery 400 is preferably made of a metallic material.
• the upper layer 500 forms a second electrode, preferably the cathode.
• Figures 2 to 10 illustrate the steps of the method forming the organic light emitting device according to the present invention.
• Figures 2 and 3 illustrate a schematic representation, respectively in longitudinal section and in top view, of a stack of layers for forming the organic light emitting diode.
• a layer is formed lower 200 on a substrate 100.
• the substrate 100 is a flat plate made of a transparent material.
• the substrate 100 is made of glass.
• the substrate 100 may be chosen from metal, plastic, fabric or paper.
• the lower layer 200 represents a first electrode, preferably the anode.
• the lower layer 200 is composed of an inorganic material.
• the lower layer 200 is selected from a transparent or semi-transparent material.
• a material is considered transparent (respectively semi-transparent) if it lets the light waves pass through a certain wavelength range, ie it does not attenuate (respectively partially) the intensity light waves passing through it.
• the lower layer 200 is preferably formed of a transparent conductive oxide (In English, acronym: TCO for "Transparent Conducting Oxide”).
• TCO Transparent Conducting Oxide
• the lower layer 200 may be composed of a stack of TCO / Ag / TCO / Ag type layers, where Ag represents silver.
• the lower layer 200 is selected from a material of the type of indium tin oxide (ITO: Indium Tin Oxide). This material has interesting electrical conductivity properties and optical transparency for the manufacture of organic light emitting device.
• the lower layer 200 is transparent at least 50%, to allow the transmission of light.
• a step is performed for etching said lower layer 200, made, for example, by means of a laser.
• a trench 50 is preferentially formed in the lower layer 200, following etching, for example, carried out by laser irradiation.
• Trench 50 follows a closed line.
• the trench 50 has a depth preferably equal to the thickness of the lower layer 200.
• the trench 50 preferably has a width of at least 10 microns.
• the trench 50 thus formed makes it possible to electrically separate an isolated zone 250 from the lower layer 200 relative to the remainder of the lower layer 200 and possibly access to the substrate 100.
• the use of a laser has the advantage of forming patterns of different shapes in the lower layer 200.
• the pattern may be selected from a round, oblong, square, or still rectangular.
• the trench 50 has a section closed transversely to the thickness.
• the laser irradiation etching step creates an insulated area 250 within the trench 50 of the lower layer 200 which is electrically insulated from the remaining area of the lower layer 200 outside the trench
• the insulated zone 250 comprises a plurality of isolated zones 251, 252, 253.
• the zones of the plurality of isolated zones 251, 252, 253 are grouped together and separated from one another by a trench 50.
• the laser irradiation does not require a step of protecting the areas of the lower layer 200 not exposed to the laser. This has the advantage of avoiding the use of a complex process that is potentially incompatible with the manufacture of light-emitting diodes.
• the organic layer 300 is advantageously composed of one or more sublayers. These sub-layers preferably comprise specific materials, making it possible to improve the injection of electrons and holes, and consequently to improve the efficiency of the light emission device.
• the organic layer 300 may especially comprise a hole injection layer, a hole transport layer, a light emission layer produced by the recombination of the holes and electrons, a transport layer. electrons and an electron injection layer.
• the organic layer 300 may be deposited according to various techniques such as thermal evaporation, spin coating, thin film deposition (dip coating), spraying. cathodic, the atomic deposition monolayer (in English “atomic layer deposition”), or the chemical deposition monolayer (in English “chemical layer deposition”).
• the organic layer 300 is deposited on top of the lower layer 200.
• the organic layer 300 is formed so as to extend, uniformly and continuously, on either side of the trench 50 performed in the lower layer 200, and thus be in contact with at least one of the plurality of isolated areas 251, 252, 253 of the lower layer 200.
• the portion of the organic layer 300 overflowing on least one of the isolated zones makes it possible to electrically isolate a possible upper conductive layer covering each of the isolated zones 251, 252, 253 of the lower layer 200.
• the step of forming the upper layer 500 is carried out.
• the upper layer 500 is transparent or opaque.
• it is semi-transparent or mirror.
• the upper layer 500 is typically made of a metallic material. It may, for example, be of a material such as aluminum or calcium. It is preferably deposited by thermal evaporation or sputtering.
• the upper layer 500 is advantageously deposited above the organic layer 300. According to a particularly advantageous embodiment, the upper layer 500 does not extend beyond the organic layer 300. Advantageously, this embodiment prevents a possible contact between the lower layers 200 and 500, which can generate short circuits.
• the upper layer 500 comprises a plurality of distinct zones 510, 520, 530 disposed on the organic layer 300.
• each zone forms an elementary light source 510, 520, 530.
• elementary light source 510, 520, 530 is associated with a separate organic light-emitting diode.
• the layer 500 thus defines a plurality of second electrodes, for example a plurality of cathodes, each delimiting an elementary light source 510, 520, 530 for each of the diodes; the sources also having in common the organic layer 300 and the electrode formed in the layer 200.
• a contact resumption 400 is carried out so that it is not positioned on the isolated areas 251, 252, 253 of the lower layer 200.
• this contact recovery 400 acts as a common anode for all of the organic light emitting diodes of the device.
• FIG. 4 illustrates the formation of a first insulating layer 610.
• This first insulating layer 610 is advantageous deposited so as to partially cover at least the top layer 500.
• the first insulating layer 610 partially covers at least all the elementary light sources 510, 520, 530. It is preferable to leave at least a portion of the upper layer 500 not covered by said first insulating layer 610.
• the first insulating layer 610 is deposited so as to leave uncovered, for each diode, an overflowing portion 510a, 520a, 530a of each of the elementary light sources 510, 520, 530.
• the term "overflowing part" a part that is not surmounted or covered by another layer.
• an overflowing portion of a layer may be understood as a pattern that protrudes laterally from a rectangular pattern.
• the first insulating layer 610 may be deposited according to various techniques such as thermal evaporation, spin coating ("spin coating”), thin film deposition (in English “inkjet”), thin film deposition. (English “dip coating”), cathode sputtering, the atomic layer deposition (in English “atomic layer deposition”), or the chemical deposit monolayer (in English “chemical layer deposition”).
• a stencil preferably metal.
• this stencil is rectangular or square.
• this stencil is configured to adapt to the shape of the patterns of the elementary light sources 510, 520, 530. This stencil advantageously allows to leave exposed the protruding portions 510a, 520a, 530a of each diode.
• the first insulating layer 610 comprises at least one organic layer and / or at least one inorganic layer.
• the first insulating layer 610 may comprise, for example, an oxide (for example silicon oxide, aluminum oxide) or a nitride (for example silicon nitride).
• the thickness of the first insulating layer 610 is between 2 nm and 1 micron.
• the thickness of the first insulating layer 610 is of the order of 100 nm.
• FIG. 5 illustrates the formation of a first conductive layer 710.
• This first conductive layer 710 is advantageous deposited so as to partially cover at least the first insulating layer 610, a part of the upper layer 500 not covered by the first insulating layer 610 (i.e. at least one protruding portion 510a, 520a, 530a exposed to at least one light source elementary 510, 520, 530) and a first insulated area 251 among the plurality of insulated areas 251, 252, 253 of the lower layer 200.
• the first conductive layer 710 forms an electrically conductive track configured to electrically connect an overflowing portion 510a, 520a, 530a left exposed of at least a first elementary light source 510, 520, 530 (that is ie a second electrode of a first diode) to the first insulated area 251 of the lower layer 200.
• the portion of the first conductive layer 710 covering the first insulated area 251 forms a contact resumption for the at least at least one elementary light source 510, 520, 530 (in other words for at least one first diode) covered by said first conducting layer 710.
• This first conducting layer 710 advantageously allows addressing of a first light source 510 of the upper layer 300 to from a contact recovery positioned on the first insulated area 251 of the lower layer 200.
• the first conductive layer 710 may be deposited according to various techniques such as thermal evaporation, spin coating (in English “spin coating”), the deposition of thin films (in English “inkjet”). “Dip coating”), sputtering, atomic layer deposition (in English “atomic layer deposition”), or the chemical deposit monolayer (in English “chemical layer deposition”).
• the thickness of the first conductive layer 710 is between 10 nm and 5 microns.
• the thickness of the conductive layer 710 is of the order of 500 nm.
• the invention proposes to deposit a bilayer stack comprising an insulating layer 610 and a conductive layer 710 for each separate addressing of elementary light sources 510, 520, 530, each forming an organic light-emitting diode.
• FIGS. 6 to 9 illustrate the steps of producing a method for addressing a plurality of distinct elementary light sources, that is to say a plurality of diodes from the same organic layer 300.
• a second insulating layer 620 is deposited, as illustrated in FIG. 6.
• This insulating layer 620 is advantageously deposited so as to cover in part at least the first conductive layer 710.
• the second insulating layer 620 can be deposited according to the same deposition techniques as previously used for the first insulating layer 610.
• the second insulating layer 620 uses the same stencil as that used during the formation.
• the second insulating layer 620 comprises at least one organic layer and / or at least one inorganic layer.
• the second insulating layer 620 may comprise, for example, an oxide (for example silicon oxide, aluminum oxide) or a nitride (for example silicon nitride).
• the thickness of the second insulating layer 620 is between 2 nm and 1 micron.
• the thickness of the second insulating layer 620 is of the order of 100 nm.
• FIG. 7 illustrates the deposition of a second conductive layer 720 intended to form an electrically conductive track configured so as to allow addressing of a second elementary source 520 of the upper layer 300 from a resumption of contact positioned on a second insulated area 252 of the lower layer 200.
• the second conductive layer 720 is separated from the first conductive layer 710 by the second insulating layer 620.
• the second conductive layer 720 while being electrically isolated from the first diode, covers at least in part at a time: the second insulating layer 620, at least the projecting portion 520a of at least a second diode not covered either by the first insulating layer 610, or by the second insulating layer 630 and a second isolated area 252; said second insulated zone 250, covered by the second conductive layer 720, forming a contact recovery (20b for said second diode.
• Figures 8 and 9 reproduce the same steps as those of Figures 6 and 7; these steps being intended for the addressing of a third elementary light source 530 (that is to say of a third diode) of the upper layer 500, a contact recovery of which will advantageously be positioned at a third isolated region 253 of the lower layer 200.
• the step of formation of at least one additional bilayer stack is then repeated until each overflowing portion 510a, 520a, 530a of each diode is covered by one of the conductive layers 710, 720, 730 of one of the two-layer stacks.
• the first conductive layer 710 or the second conductive layer 720 covers the projecting portion 530a of the third diode not covered either by the first insulating layer 610, or by the second insulating layer 620.
• FIG. 10 illustrates a step of placing a cover 800 on the stack of layers comprising at least the lower layer 200, the organic layer 300, the upper layer 400, the plurality of insulating layers 610, 620, 630 and conductors 710, 720, 730.
• the cover 800 is preferably coated on a first face of a layer of adhesive, before being deposited on the stack of layers.
• the adhesive layer is preferably spread over the entire surface of the cover 800.
• the adhesive layer has the advantage, once dry, of not reacting with water or with oxygen (first degradation factors organic materials).
• the adhesive layer thus disposed, acts, particularly advantageously, as a sealed protective barrier for the sensitive layers such as the lower layer 200 that is to say the first electrode, the organic layer 300 and the upper layer 500 is the second electrode.
• the cover 800 is made of a transparent material, configured so as to allow the light to pass.
• the cap 800 is made of glass.
• the hood 800 may be plastic or metal.
• the thickness of the cap 800 is about 1 millimeter.
• the cover 800 may be of various shapes.
• the cover 800 may be prismatic, cylindrical or cubic.
• the cover 800 has at least one opening 850 configured so as to be through.
• the section of the opening 850 in the plane of the organic light-emitting diode, perpendicular to the thickness of said organic light-emitting diode may take the form of a polygon, or a circular or oblong hole, for example.
• the 800 is configured to position itself above the plurality of isolated areas 251, 252, 253 of the lower layer 200 upon laser irradiation of said lower layer 200 as well as the contact resumption 400 of the first electrode, preferably forming an anode common to all organic light-emitting diodes made on the device.
• the opening of the cover 800 is configured to be smaller than the trench 250 of the lower layer 200.
• the method according to the invention overcomes not only the problems of short-circuit from contact areas between the lower layer 200, representing a first electrode and the upper layer 500 representing a second electrode (In particular thanks to the trench 50 made in the lower layer 200), but also makes it possible to optimize the architecture of the electrical connections for the purpose of addressing elementary light sources 510, 520, 530 in an organic light-emitting diode.

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