EP3281220A1 - Dispositif et procédé pour relier deux substrats - Google Patents

Dispositif et procédé pour relier deux substrats

Info

Publication number
EP3281220A1
EP3281220A1 EP15717136.4A EP15717136A EP3281220A1 EP 3281220 A1 EP3281220 A1 EP 3281220A1 EP 15717136 A EP15717136 A EP 15717136A EP 3281220 A1 EP3281220 A1 EP 3281220A1
Authority
EP
European Patent Office
Prior art keywords
substrate
temperature
substrate holder
substrates
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP15717136.4A
Other languages
German (de)
English (en)
Inventor
Thomas Wagenleitner
Thomas PLACH
Jürgen Michael SÜSS
Jürgen MALLINGER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EV Group E Thallner GmbH
Original Assignee
EV Group E Thallner GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EV Group E Thallner GmbH filed Critical EV Group E Thallner GmbH
Publication of EP3281220A1 publication Critical patent/EP3281220A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/18—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] characterised by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H10P10/128—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates by direct semiconductor to semiconductor bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass

Definitions

  • the present invention relates to a substrate holder, a system comprising such a substrate holder, a use of such a substrate holder, a method for bonding two substrates and a product, in particular a substrate stack, produced by such a method and a use of such a substrate holder for such a method.
  • metals are made by diffusion processes at high
  • run-out compensation Semiconductor industry, known as run-out compensation. This error will be explained in more detail below.
  • One of the biggest technical problems of permanently bonding two substrates is the alignment accuracy of the functional units between the individual substrates.
  • the substrates are aligned by alignment devices can be aligned very closely to each other, it can come during the bonding process itself to distortions of the substrates. Due to the resulting distortions, the functional units do not
  • the alignment inaccuracy at a particular point on the substrate may be a result of distortion, scaling error, lens aberration
  • Each functional unit is designed in the computer before the actual manufacturing process. For example, patterns, microchips, MEMS, or any other microstructure fabricatable structure are designed in a computer aided design (CAD) program.
  • CAD computer aided design
  • the differences are mainly due to hardware limitations, ie engineering problems, but very often due to physical limitations.
  • the resolution accuracy of a structure made by a photolithographic process is limited by the size of the apertures of the photomask and the wavelength of the light used. Mask distortions are transmitted directly into the photoresist.
  • Machine linear motors can only approach reproducible positions within a given tolerance, etc. It is therefore not surprising that the functional units of a substrate can not exactly match the structures constructed on the computer. All substrates therefore already have before
  • Bonding process a non-negligible deviation from the ideal state. If one now compares the positions and / or shapes of two opposite functional units of two substrates assuming that neither of the two substrates is distorted by a bonding process, then one notes that in general an imperfect coverage of the functional units already exists by the above-described mistakes of the ideal
  • the classical global overlay errors are the errors I. and IL type, which result from a translation or rotation of the two substrates to each other.
  • the translation or rotation of the two substrates generates a corresponding translational or rotational error for all, respectively opposite, functional units on the substrates.
  • a local overlay error arises location-dependent, mainly by elasticity and / or plasticity problems, in the present case mainly caused by the continuous
  • thermodynamic equilibrium is always present when all the intense thermodynamic quantities, in particular the temperature in the specific case, are the same for all the subsystems to be considered. In many cases, it is such that one of the substrates, in particular the substrate, which is fixed to the lower substrate holder, has an elevated temperature.
  • the second, lower substrate can heat the upper, first substrate, thermally stretch and above all, expose a very complicated heating profile.
  • the heating profile is determined by a temperature-time profile. In this case, even a very small temperature difference between the first and second substrate to a
  • the temperature of the upper substrate increases with decreasing distance between both substrates and remains constant for a short time in a saturation region, before it decreases by another process, in particular exponentially and then remains constant under unchanged boundary conditions.
  • the state of the art has the particular problem that the substrates are bonded together in temperature ranges in which the temperature changes as a function of time.
  • the bond wave is subject to different times, or in other words, different positions, different temperatures and thus produces the above-mentioned run-out errors.
  • the core of the invention consists in particular of the invention, in particular upper (hereinafter also referred to as the first substrate holder),
  • Substrate holder to be constructed so that any recorded heat controlled, in particular on the back of the substrate holder, dissipated and discharged there via a heat exchanger, so that heating of the fixed, in particular upper (hereinafter also called first substrate), substrate can be selectively adjusted.
  • first substrate heating of the fixed, in particular upper
  • Another important aspect of the invention is the targeted optimization of the thermal resistances of the system, in order to enable a targeted adjustment of the temperature difference ⁇ according to the invention.
  • This temperature difference ⁇ is generally a function of the time or distance between the two substrates.
  • This temperature range d is predominantly the temperature difference ⁇ in the temperature range of the temperature saturation of the lower substrate, this temperature range being designated d in the further course of the patent.
  • the temperature difference ⁇ should be kept constant.
  • the temperature difference ⁇ in particular in the temperature saturation region d, is therefore generally (i) determined by the thermal resistances and / or (ii)
  • Heating elements in particular a heater in the lower substrate holder, and / or (iii) by cooling elements, in particular a cooling fluid, specifically set.
  • the substrate holder has a fixing surface for holding a substrate, wherein the substrate holder has a heat conduction body for dissipating heat away from the fixing surface, preferably and / or for supplying heat to the fixing surface.
  • Another object of the present invention relates to a system for bonding a first substrate to a second substrate, comprising at least a substrate holder according to one of the preceding embodiments for supporting at least one of the two substrates. Reference is made in particular to the comments on the substrate holder.
  • Another object of the present invention relates to a use of a substrate holder according to the invention as the upper substrate holder.
  • Another, particularly independent, subject of the present invention relates to a method for bonding a first substrate to a second substrate, wherein the substrates are brought closer to each other in a first step, so that the temperature of the first substrate increases, wherein in a second step, the approach the substrates are stopped and the distance between the substrates is kept constant so that a constant temperature of the first substrate adjusts at a constant distance for at least a period of time, wherein in a third step within the period of time at a constant temperature of the first substrate, the two substrates, at least temporarily, be bonded together.
  • Another object of the present invention relates to a product
  • a substrate stack comprising a first substrate and a second substrate, wherein the substrates are bonded together by a method according to the invention.
  • Another object of the present invention relates to a use of such a substrate holder for holding a substrate during such a process.
  • the substrate holder especially the upper one, should be thermally coupled as well as possible to the ambient temperature. This can lead to an increase and / or dissipation of heat.
  • the upper substrate is heated by the lower substrate or the lower substrate holder.
  • Substrate holder is in particular designed so that its temperature profile, in particular the temperature profile of the upper substrate, can be adjusted specifically when approaching the lower substrate or the lower substrate holder.
  • the thermal resistances of the substrate holder according to the invention are in particular designed so that a temperature equalization of
  • the thermal resistances are therefore preferably minimized.
  • the cooling fluid is preferably the ambient atmosphere.
  • the temperature of the cooling fluid is therefore preferably the
  • Substrate holder or on, in particular upper, substrate can be determined in particular the optimum time for bonding, which is accompanied by an increase in throughput at the same time.
  • Coupling of the substrates to the substrate holder is preferably so efficient that the deviation of the temperature is negligible.
  • the temperature of the lower substrate with a heating lower substrate holder may be slightly lower than the temperature of the lower substrate holder.
  • Temperature of the upper substrate is generally slightly higher than that
  • the substrate holder according to the invention also referred to below as the sample holder, leads a possible amount of heat in a controlled manner to the rear side, where it is converted by a heat exchanger and removed by the substrate holder according to the invention. Furthermore, the large thermal mass of the, in particular upper, substrate holder ensures a
  • Temperature stabilization of, in particular upper, substrate so that thermal fluctuations of the immediate environment are minimized as far as possible. It is another important aspect of the invention that the comparatively large thermal mass is the temperature of the upper substrate or the
  • the substrate holder according to the invention can be used as upper and / or lower substrate holder.
  • the substrate holder according to the invention is designed, in particular, as an upper substrate holder, so that the upper, first substrate fixed on it is deformed in the direction of gravity, as long as it is not fixed, in particular over its entire surface.
  • the roughness of a surface is referred to several times.
  • Roughness is reported in the literature as either average roughness, square roughness or average roughness. The values determined for the average roughness, the square roughness and the average roughness
  • Roughness numerical ranges are to be understood as either average roughness, squared roughness, or averaged roughness.
  • the substrate holder according to the invention is capable of heating and / or cooling the particular upper, first, substrate.
  • Heat can be dissipated from the, in particular upper, first, substrate via the heat conduction body and can preferably be passed on to a cooling fluid.
  • the heat conduction body would be a heat sink.
  • the fluid would also be conceivable, however, for the fluid to be a heating fluid which gives off heat to the heat conduction body and thus heats the upper, first substrate.
  • the heat conduction body would be a heating body.
  • the cooling fluid is preferably the atmosphere of
  • the temperature of the cooling fluid is preferably the room temperature.
  • Heat conduction body in particular facing away from the fixing surface Side (hereinafter also called the back), ribs for the removal and / or supply of heat.
  • the ribs may in particular be arranged on the entire rear side of the heat conduction body, whereby an improved heat exchange can be made possible.
  • the ribs can be distributed along a larger surface called a ribbed surface.
  • the ribs may in particular be arranged perpendicular to the fixing surface.
  • the ribs are preferably arranged parallel to one another.
  • a heat conduction body as
  • Heat sink is used, it would be cooling fins.
  • a heat conduction body which serves as a heating body one could refer to the ribs as heating ribs, which conduct the heat from the fluid optimally in the heat conduction body.
  • the ribs are spoken.
  • the heat conduction body as a heat sink, the ribs are considered as cooling fins and the fluid as a cooling fluid.
  • the embodiments of the substrate holder according to the invention are preferably designed such that the ribs are located in an encapsulation, for example an enclosure.
  • the encapsulation preferably has at least two accesses. One of the entrances is used to supply the fluid, the second of the discharge. This makes it possible to flow the fluid continuously and above all spatially separated from the environment via the ribs of the heat conduction body.
  • Such a compact design also allows the separation of the embodiment of the invention from the surrounding components. If the cooling is gas cooling, in particular cooling with air, an inflow of the fins through a gas flow, in particular an air flow, via a blower may already be sufficient to ensure efficient cooling. In a very particularly preferred embodiment, the cooling fins are cooled only by the surrounding atmosphere.
  • the flow rate of the fluid is preferably controllable.
  • the flow rate is greater than l mm / s, preferably greater than lem / s, more preferably greater than 10cm / s, most preferably greater than 1 m / s.
  • the fluid can also be pressurized.
  • the pressure of the fluid preferably corresponds to the
  • the fluid can also be used under pressure. Then the pressure is greater than 1 bar, preferably greater than 2 bar, more preferably greater than 5 bar, most preferably greater than 10 bar, on
  • Encapsulation and thus to the ribs is preferably about
  • Hose systems connected to the accesses.
  • the substrate holder according to the invention in addition to the, discussed below, the heat conduction body and the heat exchanger on its back over
  • additional actively controllable cooling and / or heating elements have additional actively controllable cooling and / or heating elements. These additional cooling and / or heating elements are preferably in the
  • Inventive substrate holder in particular in the heat conduction body, installed. It would also be conceivable to attach the cooling and / or heating elements to the periphery of the heat conduction body in order to leave the heat conduction body as homogeneous as possible and not to generate thermal impurities by additionally installed components.
  • a heating element is preferably an induction heater. As the temperature compensation, however, only for relatively smaller
  • a cooling element could be additionally installed Peltier elements that are independent of the actual invention
  • Peltier elements are preferably outside of the heat conduction body
  • the heat conduction body is a component with the largest possible thermal mass.
  • the thermal mass is the product of the specific heat capacity and the mass of the body. With a constant density distribution, the mass can be replaced by the product of density and volume.
  • thermal mass is used predominantly in engineering. In the natural sciences, one mainly uses the more common concept of heat capacity.
  • the unit of heat capacity is J / K. It is a measure of a body's ability to heat at a certain level
  • Heat storage which can serve as a buffer element.
  • a temperature gradient generally drops above the heat conduction body when the temperature Tk of the cooling fluid used differs from the temperature of the upper substrate. Instead of the temperature gradient, an average temperature can also be considered.
  • the temperature of the cooling fluid is preferably kept constant during the process according to the invention, while the temperature gradient or the average temperature Tw changes generally.
  • the temperature Tw preferably always corresponds to the temperature of the upper substrate and deviates from this only marginally.
  • the temperature of the upper substrate, and of the inventive heat conduction body or of the entire upper substrate holder according to the invention would correspond to the temperature of the cooling fluid, in particular the ambient temperature, provided that the thermal resistance Rth4 between the two substrates is infinite would be great. By a finite value of the thermal resistance Rth4, however, a heat flow from the lower substrate to the upper substrate is possible.
  • Erfindungsgeraäß is of particular importance that the temperature difference ⁇ , especially during the temperature interval d, known and, above all, is selectively adjustable in order to reduce the run-out error or preferably completely eliminate it.
  • the heat conduction body Since it is an object of the invention according to the invention to dissipate the temperature as controlled as possible on the substrate, but also to stabilize it correspondingly strong, the heat conduction body has a
  • the kapiztician the heat conduction body is as large as possible in order to allow efficient storage of heat or
  • the specific heat capacity of the heat conduction body is in particular greater than 0.1 kJ / (kg * K), preferably greater than 0.5 kJ / (kg * K), more preferably greater than 1 kJ / (kg * K), on
  • the specific heat capacities can be converted into the absolute heat capacities by the above formulas with known density and geometry of the heat conduction body.
  • Heat conduction body material have the highest possible thermal conductivity.
  • the thermal conductivity is between 0.1 W / (m * K) and 5000 W / (m * K), preferably between 1 W / (m * K) and 2500 W / (m * K), more preferably between 10 W / (m * K) and 1000 W / (m * K), most preferably between 100 W / (m * K) and 450 W / (m * K).
  • copper the most widely used construction material for dissipating heat, has a thermal conductivity of about 400 W / (m * K).
  • the thermal conductivity determines how much energy is transported per unit of time over a distance at a given temperature difference. The transported energy or heat quantity per unit of time is called the heat flow.
  • the heat flux is greater than 1 J / s, preferably greater than 10 J / s, more preferably greater than 100 J / s, most preferably greater than 200 J / s, most preferably greater than 500 J / s.
  • the heat conduction body is preferably actively or passively cooled at its rear side.
  • a passive cooling takes place by radiation of the heat, in particular by a possible large surface.
  • the active cooling takes place via a Cooling fluid.
  • the cooling fluid may be a gas or a liquid.
  • the cooling fluids absorb the heat via the heat conduction body, are thereby heated and at the same time cool the heat conduction body.
  • the heated cooling fluid is preferably circulated in a cooling circuit and releases the heat at another point of the circulatory system, is thereby cooled again and supplied to the cooling circuit again.
  • cooling gases are used because they are easier to handle. Is it the cooling fluid to the
  • Heat transfer body in the ambient air The locally heated ambient air then distributes itself in the surrounding atmosphere and thus leads to a temperature equalization and cooling.
  • the distribution of heat over a larger surface increases the efficiency of the radiation or the heat transfer to the cooling fluid.
  • the surface can be further increased by deliberately increasing the roughness of the surface.
  • the roughness is greater than 10 nm, preferably greater than 100 nm, more preferably greater than 1 ⁇ , most preferably greater than 10 ⁇ , most preferably greater than 100 ⁇ .
  • the heat conduction body with an open porosity.
  • the pore size should be greater than 100 nm, preferably greater than 1 ⁇ , more preferably greater than 10 ⁇ , most preferably greater than 100 ⁇ , most preferably be around 1 mm.
  • the cooling fluid flows through the open porosity and, due to the large surface area, absorbs the heat even more efficiently. It would also be conceivable to provide only the ribs with an open porosity to further increase the surface of the ribs.
  • the main object of the substrate holder according to the invention in particular the
  • the substrate holder according to the invention leads the substrate to heat and / or dissipates heat, depending on whether the substrate is to be cooled and / or heated.
  • the substrate holder according to the invention allows in particular the targeted setting of a maximum temperature or the temperature difference ⁇ between the upper and the lower substrate and guarantees the
  • Temperature stability of the maximum temperature or the temperature difference .DELTA. ⁇ for a period of time in particular equal to, even more preferably greater than the time required for bonding of the two substrates.
  • Heat transfer body is placed. Heat-conducting body and fixing part are therefore two different but interconnected components. The most efficient thermal Ankoppiung both components is done by flat as possible surfaces. The roughness of the mutually contacting surfaces of the fixing part or the heat conduction body is less than 100 ⁇ , preferably less than 10 ⁇ , more preferably less than 1 pm, on
  • thermal transition can be achieved by the use of thermal conductive pastes.
  • the fixing surface is formed integrally with the heat conduction body.
  • Heat-conducting body itself is designed as a fixing part.
  • the heat conduction body and the fixing part or the fixing surface are made in one piece.
  • the substrate holder may have other components, but not further treated, shown or described, since they have the functionality of
  • Embodiment is an improved heat conduction possible because no
  • the substrate holder has at least one, in particular movable, preferably drivable, deformation element for deforming the substrate, the at least one deformation element preferably being centered in the substrate holder
  • the at least one deformation element can in particular be movable perpendicular to the fixing surface or to the fixed substrate,
  • the at least one deformation element is preferably designed such that the substrate is deformable away from the fixing surface.
  • the substrate holder or heat conduction body may be a,
  • the at least one deformation element in particular movable, preferably driven, is arranged, or which allows the access of the at least one deformation element, with which the fixed substrate can be deformed.
  • the at least one deformation element is for example
  • a nozzle in particular
  • the deformation element is operated or controlled in such a way that it is capable of deforming the substrate, at least locally, preferably in the middle, by targeted activation.
  • the deformation is there, from the side of the
  • deformation element preferably concave.
  • the deformation serves in particular for the detachment process of the substrate from the fixing part or from the fixing surface.
  • Heat conduction body in the fixing surface at least one recess and / or recess to ensure the lowest possible contact of the substrate to the fixing surface or to the material of the heat conduction body.
  • the effective fixing surface is that portion of the fixation surface that is actually in contact with the substrate.
  • at least one recess is arranged in the fixing surface, so that the substrate from the fixing surface
  • the advantage of this embodiment according to the invention is that impurities of the substrate are reduced by the surface of the heat conduction body.
  • a gas having a correspondingly high thermal conductivity and correspondingly high heat capacity can be introduced into the at least one recess and / or depression, in particular, flowed through.
  • the substrate is then fixed only to a few, in particular at the periphery and / or in the center, fixing elements.
  • nub-shaped (nubs) and / or needle-shaped and / or podium-shaped elements are arranged in the at least one depression, so that the substrate passes through these elements spaced apart from the fixing surface, which in particular can taper pointedly in the direction of the substrate. The elements reach to the
  • All disclosed embodiments of the invention are capable of fixing a substrate, in particular a wafer, more preferably a semiconductor wafer.
  • the fixation can be done by any fixing.
  • fixing elements for fixing the substrate are arranged in, on and / or on the fixing surface. It would be conceivable
  • vacuum fixings or vacuum webs also referred to below as vacuum channels.
  • the vacuum fixation consists of several
  • Vacuum channels which in vacuum openings on the fixing of the
  • Substrate holder end In another embodiment of the invention, the vacuum channels are connected to each other, so that an evacuation and / or flushing of
  • Vacuum channels can be done simultaneously.
  • Vacuum channel groups Each vacuum channel group can be customized
  • Substrate can be achieved.
  • inventive features in particular inventive features
  • multiple vacuum ports are arranged in a plurality of centered, radius-differing, circles to a vacuum channel group.
  • all vacuum channels of the same circuit are controlled simultaneously, so that the fixation and / or detachment of the substrate can begin centrally and can be steered progressively radially symmetrically outward. This results in a particularly efficient way of controlled
  • the heat flow between the heat source and the heat sink is decisively influenced by the thermal resistances.
  • Any statistical many-particle system, hence fluids such as gases and liquids, as well as solids, has a thermal resistance.
  • the definition of the thermal resistance is known to the person skilled in the art.
  • the thermal resistance is not a pure material parameter. It depends on the thermal conductivity, the thickness and the cross section. In the further course of the document, it is assumed that the heat flow always flows through the same cross section, so that the thermal resistance, with a constant cross section, is to be regarded as a function of the thermal conductivity and the thickness of the respective considered material.
  • the thermal resistance is abbreviated in the figures by Rth and an index.
  • Rth1 to Rth8 are the thermal resistances of the (i) lower substrate holder, (ii) the fluid or vacuum between the lower substrate holder and the lower substrate, (iii) the lower substrate, (iv) the fluid or vacuum between the two substrates, ( v) the upper substrate, (vi) the fluid or vacuum between the upper substrate and the upper substrate holder, (vü) the heat conduction body and (vni) the fluid flowing in particular between the cooling fins.
  • the heat flow is directly proportional to the applied temperature difference between the heat source and the heat sink.
  • the thermal resistance is the proportionality constant. It therefore applies
  • Rthl is minimized, especially by choosing a material with high thermal conductivity
  • Rth2 is minimized, in particular by the choice of a fluid with high thermal conductivity
  • Rth4 is maximized, in particular by the flushing with a gas of low thermal conductivity and / or a vacuum and / or by an optimized process control, in particular by a skilful choice of the distance,
  • Rth6 is minimized, in particular by the choice of a fluid with high thermal conductivity
  • Rth7 is minimized, in particular by the choice of a material with high thermal conductivity and / or
  • Rth8 is minimized, especially by choosing a fluid with high thermal conductivity.
  • the thermal resistances By maximizing the thermal resistance Rth4, the heat flow from the lower substrate to the upper substrate is minimized, preferably even completely interrupted. Since a complete interruption of the heat flow, however, is virtually unattainable, it is almost always to a
  • the temperature difference ⁇ is in particular less than 20 ° C, preferably less than 10 ° C, more preferably less than 5 ° C, most preferably less than 1 ° C, most preferably less than 0.1 ° C.
  • the temperature of the lower substrate should preferably be able to be set exactly by a heater in the lower substrate holder.
  • the temperature of the lower substrate should correspond to the temperature of the lower substrate holder.
  • the lower substrate holder becomes in particular to temperatures below 100 ° C., preferably below 75 ° C., more preferably below 50 ° C., most preferably below 30 ° C.
  • Temperature of the cooling fluid and / or the heat conduction body correspond.
  • the invention corresponds to the
  • the cooling fluid is in particular at temperatures below 100 ° C,
  • the ambient atmosphere is used as a cooling fluid and has it
  • the diameters of the substrates can not be changed.
  • Thermal conductivities and thicknesses of the substrates used are usually likewise predetermined by production conditions and can therefore usually not be used for the optimization according to the invention.
  • the correct choice of the thermal resistances according to the invention preferably minimizes the heat flow, in particular from the lower substrate to the upper substrate, and maximizes the heat flow from the upper substrate to the cooling fluid.
  • the temperature difference AT remains constant according to the invention.
  • a further aim of the choice of the thermal resistors according to the invention is, in particular, to keep the temperature of the upper substrate constant, in particular at ambient temperature, and therefore the
  • the heat source of the lower substrate At a constant temperature of the lower substrate holder, and thus of the lower substrate, this is equivalent to maintaining the temperature difference ⁇ between the upper and the lower substrate, in particular during the bonding process in the temperature range d. This is done primarily by maximizing the thermal resistance Rth4 between the substrates.
  • the temperature Tlu of the lower substrate should be able to be regulated as efficiently as possible by means of a heating device.
  • the temperature of the lower substrate holder is designated Tp.
  • the temperature Tp of the lower substrate holder is about each
  • temperature-time diagrams in particular a temperature, in particular the temperature T on, with the substrate holder according to the invention fixed substrate as a function of time t is shown (temperature graph). The temperature is displayed on the ordinate at the left edge of the temperature-time diagram.
  • a distance-time curve can be represented (distance graph), at which one can read, how large to one
  • the distance-time curve indicates distances from the mm to the nm range, it is preferably scaled in an integral manner.
  • the distance-time curve in the figures is shown with a linear scaling.
  • a Tt diagram for the fixed substrate
  • a Tt diagram for the substrate holder according to the invention could also be described.
  • the two Tt diagrams differ only marginally, especially in Reference to minimum deviations along the temperature axis, from each other.
  • Tt diagrams are therefore synonymous with temperature-time diagrams of the fixed substrate and / or the
  • Each diagram can generally be divided into six sections, in particular
  • the substrate is approached from a relatively large distance.
  • the distance between the two substrates in section a is greater than 1 mm, preferably greater than 2 mm, more preferably greater than 3 mm, most preferably greater than 10 mm, most preferably greater than 20 mm.
  • a movement of the substrate within the section a does not lead to an increase in temperature by the other, in particular lower, second, substrate or the other, in particular lower, second, substrate holder, which can generally be heated to a temperature above room temperature. If the distance between the two substrates is reduced to such an extent that an influence by heat radiation of the second, lower substrate or the second, lower substrate holder and / or the heat convection of the surrounding gas takes place at the upper, first, substrate, a moderate occurs
  • the distance between the two substrates is between 10 mm and 0 mm, preferably between 5 mm and 0 mm more preferably between 1 mm and 0 ⁇ , most preferably between 100 ⁇ and 0 ⁇ .
  • the heat leads to heating of the upper, first, substrate due to the small distance diameter ratio of substrate distance to substrate diameter.
  • the ambient gases heated by thermal radiation can no longer diffuse fast enough from the gap between the two substrates and therefore preferentially transfer the heat directly from the lower, second, substrate to the upper, first, substrate. Similar considerations apply to the heat radiation, which has practically only the possibility to reach the surface of the upper, first, substrate.
  • This area of strong heating of the substrate is referred to as the near approach area c.
  • the distance between the two substrates is here between 1 mm and 0 mm, preferably between 100 ⁇ and 0 ⁇ , more preferably between 10 ⁇ and 0 ⁇ , most preferably between 1 ⁇ and 0 ⁇ .
  • the transition of the temperature profile from the Nahan strictlyrungs Scheme c in a so-called temperature saturation region d is preferably carried out by a mathematically continuous as possible but not differentiable transition. It is also conceivable that the transition takes place continuously, so that a separation of the areas c and d can no longer be made clearly.
  • the shape of the temperature-time graph looks like a "shark's fin.” However, other forms would also be conceivable.
  • the bonding process according to the invention preferably takes place.
  • the translational approach of the substrates is stopped, that is, the distance between the substrates remains constant.
  • the upper, first substrate has a constant temperature T4o for a well-defined period of time tl, which corresponds to the length of the temperature saturation region d.
  • constant temperature T4o is a maximum temperature fluctuation of a maximum of 4 K, preferably a maximum of 3 K, more preferably a maximum of 2, on
  • the distance between the two substrates is constant in this range and is between 1 mm and 0 mm, preferably between 100 ⁇ and 0 ⁇ , more preferably between 10 ⁇ and 0 ⁇ , most preferably between 1 ⁇ and 0 ⁇ , in specific embodiments of the invention would be a further approximation of the two substrates in the area d also still possible. However, it must be ensured that there is still enough time left for the actual bonding process. Furthermore, in the temperature saturation region d, the temperature difference ⁇ between the lower and the upper substrate remains constant. The fluctuations in the temperature difference ⁇ are less than 4 K, preferably less than 3 K, more preferably less than 2 K, most preferably less than 1 K, on
  • the temperature difference ⁇ can be any temperature difference ⁇ .
  • Heat sources in particular the heater in the lower substrate holder, and / or the heat sinks, in particular the ühlfluid, be set exactly and reproducibly.
  • the time interval t1 during which the constant temperature T4o sets at a constant distance d3, is more than 5
  • Seconds preferably more than 10 seconds, more preferably more than 15
  • Seconds more preferably more than 20 seconds, most preferably more than 40 seconds. This advantageously remains sufficient time for the bonding process.
  • the time interval t1, the distance d3 and / or the constant temperature T4o are determined before the first step, in particular empirically, preferably taking into account the temperature of the second substrate, the materials of the substrate holder, the heat conduction body and / or the substrates and / or the approach speed.
  • the bonding process in particular the fusion bond process, requires a time span t2 which is, in particular, less than or equal to the time interval t1. It is an important aspect of the invention that the bonding process preferably takes place within the period of the temperature saturation region d at the given temperature T4o. This has the advantage that the bonding process can take place without the temperature of the first substrate changing, as a result of which the run-out errors described above can be avoided, at least reduced.
  • the upper, first, substrate in particular exponentieli, cools off.
  • all necessary physical parameters are determined which make it possible to obtain an exact statement about the temperature-time graph.
  • the method according to the invention must be modified by varying the physical parameters be until it was ensured that during the actual bonding process precisely that temperature-time profile is formed, which is an optimal connection of both
  • the system is calibrated for temperature-time behavior, it is also ensured that the top, first, substrate has a well-defined temperature at a well-defined time, and that from the beginning of reaching that temperature, a well-defined time exists to complete the actual bonding process can be done by a deflection and / or solution of, in particular caused by vacuum, fixation. Being able to bond early in the area d results in two fundamentally important ones
  • bonding can begin early, resulting in an immense increase in throughput, and second, it ensures that the substrate is extremely stable within a well-defined period of time
  • both substrates have a practically constant temperature during the time interval of the region d and practically do not change their temperature during the bonding process. It should again be explicitly mentioned in this context that the above circumstance of constant temperature does not mean that both substrates must have the same temperature. It may well be desirable to deliberately heat or cool at least one of the two substrates to a higher or lower temperature in order to pass through one Forced, forced thermal expansion to set a desired, forced substrate size, which leads to a congruence of the two functional units of both substrates. However, it is according to the invention to keep these once set temperatures constant during the bonding process.
  • the substrates can be pre-treated and / or post-treated.
  • a pre-treatment are especially in question
  • the embodiment according to the invention makes it possible, above all, to compensate for the run-out error known in the prior art.
  • the alignment accuracy that can be achieved by the system according to the invention or the process according to the invention is better than 100 ⁇ , preferably better than 10 ⁇ , more preferably better than 500 nm, on
  • Alignment accuracy is particularly equal at each position of the
  • Substrate stack which is a crucial and characteristic feature of a successful run-out error compensation.
  • the standard deviation of alignment accuracy obtained by averaging all registration errors of the
  • Substrate stack is determined is less than 1 ⁇ , preferably less than 500 nm, more preferably less than 250 nm, most preferably less than 100 nm, most preferably less than 50 nm.
  • the substrates are heat treated if necessary.
  • the heat treatment is necessary in particular for fusion-bonded substrates.
  • the heat treatment in this case leads to the generation of a permanent bond of both substrates, which can no longer be dissolved. If heat treatments of the substrates after the bonding process according to the invention are no longer necessary, it is dispensed with accordingly.
  • the bonding of the two substrates takes place in the region d by the deformation of one, in particular of the upper, first, substrate.
  • the deformation is preferably carried out centrally by the deformation element already described.
  • the advantage of the first process according to the invention is above all in throughput. Since the bonding process already takes place in the section d and does not have to wait for the cooling of the upper, first substrate, the throughput (therefore the number of substrates that can be processed per unit of time with the embodiment according to the invention) can be increased in contrast to the prior art become.
  • Substrate is the adaptation process to the ambient temperature, which is predefined primarily by the surrounding atmosphere and / or the lower, second, substrate or the lower second substrate stringer.
  • the bonding of the two substrates in the region f is effected by the deformation of one, in particular of the upper, first, substrate.
  • the deformation is preferably carried out centrally by the deformation element already described.
  • the temperatures T4o, T6o can be varied and optimally adapted by the substrate holder according to the invention, in particular by the thermal mass, the cooling elements and devices, the cooling processes, the cooling fluids, etc.
  • Figure 1 is a not to scale, schematic cross-sectional view
  • Figure 2 is a not to scale, schematic cross-sectional view
  • Figure 3 is a not to scale, schematic cross-sectional view
  • Figure 5 is a not to scale, schematic cross-sectional view
  • Figure 6a is a not to scale, schematic cross-sectional view
  • FIG. 6b is a schematic cross-sectional view, not to scale, of a second step
  • FIG. 6c shows a schematic cross-sectional representation, not to scale, of a third step
  • FIG. 6d shows a schematic cross-sectional representation, not to scale, of a fourth step
  • FIG. 6e is a schematic cross-sectional view, not to scale, of a fifth step
  • FIG. 6f shows a schematic cross-sectional representation, not to scale, of a sixth step
  • Figure 7a is a schematic representation of a first temperature time
  • Figure 7b is a schematic representation of a second temperature-time
  • Figure 8 is a schematic representation of possible overlay errors
  • Figure 9 is a schematic representation of a thermal equivalent circuit diagram.
  • FIG. 1 shows a first embodiment of the invention
  • Substrate holder 1 comprising a fixing part 4 and a heat conduction body 2.
  • the fixing part 4 has fixing elements 5, in particular vacuum webs, more preferably individually controllable vacuum webs, by means of which a not shown first substrate 1 1 can be fixed to a fixing surface 4o.
  • the heat-conducting body 2 preferably has a plurality of ribs 3, which can deliver heat to an unillustrated fluid via their rib surface 3o.
  • the heat conduction body 2 is connected to the fixing element 4 via a
  • FIG. 2 shows a second, preferred embodiment according to the invention of a substrate holder according to the invention, comprising one
  • Heat conduction body 2 ' which also acts as a fixing part.
  • the heat conduction body 2 'and the fixing part are in one piece, in contrast to the embodiment of FIG. formed integrally or integrally. Thereby there is no interface between the fixing part and the
  • Heat conduction body 2 ' so that there is advantageously no thermal barrier, which hinders the removal of heat from the first substrate 11, not shown, to the fins 3 flowing around the fluid, not shown.
  • FIG. 3 shows a third, more preferred, invention
  • Embodiment of a substrate holder according to the invention 1 " which has a bore 7 in the heat conduction body 2".
  • the bore 7 allows the access of a deformation element 8, in particular of a mandrel, to the rear side 1 lo of a substrate 1, not shown. Otherwise, this embodiment corresponds to that of FIG. 2, so that reference is made to the description of this figure.
  • FIG. 4 shows a fourth embodiment of the invention
  • Inventive substrate holder 1 "' in addition to those mentioned in Figure 3
  • Features still on recesses 9 in the fixing surface 4o has to minimize the contact between the not shown back of the first substrate 1, not shown. This minimization serves to avoid, in particular metallic, contamination of the substrate by the fixing surface 4o. Furthermore, it serves to avoid local deformation of the substrate by particles.
  • the recesses 9 can be flooded with fluids of high heat capacity and / or thermal conductivity.
  • FIG. 5 shows a fifth embodiment of the invention
  • Inventive substrate holder 1 which in addition to the features mentioned in Figure 3 via recesses 9, which are filled with knobs and / or needles and / or pedestals 10, has the contact between the not
  • the depressions 9 can for
  • FIG. 6 a shows a first step of an exemplary method according to the invention, wherein initially a first, upper substrate 1 1 is located at a distance d 1 from a second, lower substrate 1 1 '. This process step takes place in previously defined area a of the associated T-t diagram.
  • the substrates 1 1, 1 1 ' approach each other, wherein the thermal influence of the upper, first substrate 11 by the lower, second substrate 1 1' and a lower substrate holder 14 due to the relatively large distance, as already described above, as far as possible is excluded.
  • the cooling is again an adaptation process of the temperature of the upper, first substrate 1 1 to the ambient temperature, in particular the temperature of the surrounding atmosphere, and / or the lower, second substrate 11 'or lower
  • Substrate holder 14 At this time, but already the connection of the two substrates 1 1, 1 ⁇ , in particular by a pre-bond.
  • FIG. 7 a shows a previously described temperature-time diagram, with the previously defined six characteristic temperature ranges a, b, c, d, e, f, which are indicated on the upper horizontal axis. On the lower horizontal axis, the time t is given in seconds, on the left
  • the temperature T is plotted in Kelvin.
  • the temperature graph 12 represents the temperature of the first substrate 11.
  • the temperature graph 12 ' represents the temperature of the heat conduction body 2, 2', 2 ", 2"', 2 IV more or less coincident with the temperature Tk of the cooling fluid. Prior to the approach of the two substrates 11, 1 1 'together, it also corresponds approximately to the temperature Tl o of the upper substrate 1 1.
  • the temperature graph 12 "represents the temperature of the second substrate 1 1'.
  • the temperature graph 12"' represents the temperature of If the thermal coupling between the second substrate 1 1 'and the lower substrate holder 14 is large enough, these two temperatures are almost identical.
  • a distance graph 13 is given, which indicates the distance d between the two substrates 1 1 and 1 ⁇ .
  • the distance graph 13 is to be interpreted exclusively symbolically and will in reality indicate a gentler transition from the region c into the region d, since the substrates j a are negative
  • the substrates can change their speed even in the approach phase.
  • Temperature difference ⁇ between the temperature of the lower substrate and the temperature of the upper substrate in the temperature saturation region d can by the thermal resistors and / or the heat source, in particular a heater in the lower sample holder 14, and / or a heat sink, in particular the
  • Cooling fluid to be set accurately and reproducibly.
  • the courses of the temperature graph 12 and the distance graph 13 during an exemplary method according to the invention are as follows: At the beginning of the method, ie on the far left on the time scale in the one with a
  • temperature range a the two substrates 1 1, 1 1 'approached each other, so that the distance d between the substrates 1 1, 1 1' is reduced.
  • the distance between the two substrates 1 1, 1 1 'dl which is successively reduced.
  • T l o the temperature of the first or upper substrate 1 1
  • the temperature range a is followed by the temperature range b, in terms of time, in which the temperature of the substrate 1 1 rises relatively low
  • the temperature range b is followed by the temperature range c, in which the temperature of the substrate 1 1 increases relatively sharply compared to the temperature range b (temperature curve section T3o), while the distance d between the substrates 11, 11 'is further reduced.
  • Temperature range c is the final practically constant distance d between the substrates 1 1, 1 1 'reached.
  • the temperature range c is followed by the temperature range d, in which the distance d remains constant and the temperature T4o of the first substrate 11 is practically constant.
  • This constant temperature T4o is maintained for a period tl.
  • Temperature range d (so-called bond area d) takes place abruptly.
  • the temperature range d is followed by the temperature range e, in which the temperature of the substrate 1 1 drops (temperature curve section T5o), while the distance d remains practically constant.
  • temperature range f is practically constant temperature of the substrate 1 1 before (see
  • FIG. 7b shows another temperature-time diagram, with the previously defined six characteristic temperature ranges a, b, c ⁇ d ⁇ e, f.
  • the distance graph 13 is identical to that of FIG. 7a.
  • the temperature graph 12 corresponds to that of FIG. 7a in the temperature ranges a, b, c, f, so that reference is made to the explanations for FIG. 7a for these ranges.
  • the difference from FIG. 7a is found in the regions c 'and d' in comparison to the regions c and d in FIG. 7a. In this example, the transition from the near approach region c 'into the bond region d' does not occur abruptly as in FIG. 7a but continuously.
  • FIG. 8 shows several in the diagrams I to VII, already above
  • Some of the overlay errors are known under the name run-out error.
  • the structures 15, 15 ' are indeed shape but not congruent.
  • the cause of such an error is (i) a fundamentally incorrect production of the structures 15, 15 'on the substrates 11, 11' and / or (ii) a distortion of the structures 15, 15 ', in particular due to a distortion of the substrates 1 1, 1 1 ', before bonding and / or (iü) distortion the structures 15, 15 ', in particular by a distortion of the substrates 11, 1 1', during bonding.
  • Another possibility is a global one
  • Figs. 8- ⁇ . shows another overlay error of two mutually rotated structures 15 and 15 * .
  • the rotation of the two structures 15 and 15 'to each other is exaggerated and makes in reality only a few degrees, in particular only a few tenths of a degree.
  • Substrates 1 1, 1 1 ' in particular radially from inside to outside increasingly be recognizable.
  • FIG. 9 shows a schematic, not to scale, sectional partial view of a substrate holder according to the invention with an equivalent circuit diagram of the thermal resistances Rth1 to Rth8 as described above.
  • the thermal resistances Rth1 to Rth3 should be minimal in order to allow a maximum heat conduction from the lower substrate holder 14, which in particular has a heating device (not shown), to the lower substrate 11 '.
  • a heating device not shown
  • the thermal resistance Rth4 should according to the invention a maximum s. In the, purely theoretical, ideal case of an infinitely large thermal resistance Rth4, no amount of heat would pass from the lower substrate 11 'to the upper substrate 11. Due to the finiteness of the thermal resistance Rth4 always a non-vanishingly small amount of heat from the lower substrate 1 1 'reaches the upper substrate 1 1. By the choice of a vacuum or a special
  • the thermal resistance Rth4 can be adjusted relatively easily and accurately.
  • the thermal resistances Rth5 to Rth8 should again be minimal in order to allow the maximum possible and therefore efficient heat conduction between the cooling fluid, in particular the atmosphere, and the upper substrate 11.
  • Substrate 1 1 and the temperature Tlu of the lower substrate 1 1 'during the bonding process in the temperature saturation region d is inventively especially by (i) the targeted selection of at least one of the thermal Resistors Rthl to Rth8 and / or (ii) the setting of the lower temperature Tlu ⁇ Tp, in particular by a heater in the lower substrate holder 14 and / or (iii) the setting of the upper temperature Tl o -Tk, in particular by the ühlfluid invention.

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)

Abstract

L'invention concerne un support de substrat (1, 1', 1", 1'", 1IV) comprenant une surface de fixation (4o) pour maintenir un substrat (11, 11').
EP15717136.4A 2015-04-10 2015-04-10 Dispositif et procédé pour relier deux substrats Pending EP3281220A1 (fr)

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EP (1) EP3281220A1 (fr)
JP (1) JP2018515908A (fr)
KR (2) KR20170137050A (fr)
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JP1700777S (ja) * 2021-03-15 2021-11-29 基板処理装置用ボート
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CN107533996B (zh) 2021-02-23
JP2018515908A (ja) 2018-06-14
CN107533996A (zh) 2018-01-02
TWI683393B (zh) 2020-01-21
US11315813B2 (en) 2022-04-26
SG11201706844QA (en) 2017-10-30
KR20170137050A (ko) 2017-12-12
WO2016162088A1 (fr) 2016-10-13
US20180040495A1 (en) 2018-02-08
KR102298898B1 (ko) 2021-09-07
TWI647786B (zh) 2019-01-11
TW201642386A (zh) 2016-12-01
TW201923962A (zh) 2019-06-16

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Effective date: 20210222