EP3353339A4 - Dampfabscheidungsvorrichtung und verfahren mit hochreinem siliciumcarbid aus polymer - Google Patents

Dampfabscheidungsvorrichtung und verfahren mit hochreinem siliciumcarbid aus polymer Download PDF

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Publication number
EP3353339A4
EP3353339A4 EP16849805.3A EP16849805A EP3353339A4 EP 3353339 A4 EP3353339 A4 EP 3353339A4 EP 16849805 A EP16849805 A EP 16849805A EP 3353339 A4 EP3353339 A4 EP 3353339A4
Authority
EP
European Patent Office
Prior art keywords
steam
techniques
vapor deposition
silicon carbide
deposition apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP16849805.3A
Other languages
English (en)
French (fr)
Other versions
EP3353339A1 (de
Inventor
Mark S. Land
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pallidus Inc
Original Assignee
Melior Innovations Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Melior Innovations Inc filed Critical Melior Innovations Inc
Priority to EP24168962.9A priority Critical patent/EP4407079A3/de
Publication of EP3353339A1 publication Critical patent/EP3353339A1/de
Publication of EP3353339A4 publication Critical patent/EP3353339A4/de
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/007—Apparatus for preparing, pre-treating the source material to be used for crystal growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Ceramic Products (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
EP16849805.3A 2015-09-24 2016-09-23 Dampfabscheidungsvorrichtung und verfahren mit hochreinem siliciumcarbid aus polymer Ceased EP3353339A4 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP24168962.9A EP4407079A3 (de) 2015-09-24 2016-09-23 Dampfablagerungsvorrichtung und verfahren unter verwendung von aus hochreinem polymer gewonnenem siliciumcarbid

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562232355P 2015-09-24 2015-09-24
PCT/US2016/053567 WO2017053883A1 (en) 2015-09-24 2016-09-23 Vapor deposition apparatus and techniques using high purity polymer derived silicon carbide

Related Child Applications (1)

Application Number Title Priority Date Filing Date
EP24168962.9A Division EP4407079A3 (de) 2015-09-24 2016-09-23 Dampfablagerungsvorrichtung und verfahren unter verwendung von aus hochreinem polymer gewonnenem siliciumcarbid

Publications (2)

Publication Number Publication Date
EP3353339A1 EP3353339A1 (de) 2018-08-01
EP3353339A4 true EP3353339A4 (de) 2019-05-08

Family

ID=58387445

Family Applications (2)

Application Number Title Priority Date Filing Date
EP24168962.9A Pending EP4407079A3 (de) 2015-09-24 2016-09-23 Dampfablagerungsvorrichtung und verfahren unter verwendung von aus hochreinem polymer gewonnenem siliciumcarbid
EP16849805.3A Ceased EP3353339A4 (de) 2015-09-24 2016-09-23 Dampfabscheidungsvorrichtung und verfahren mit hochreinem siliciumcarbid aus polymer

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP24168962.9A Pending EP4407079A3 (de) 2015-09-24 2016-09-23 Dampfablagerungsvorrichtung und verfahren unter verwendung von aus hochreinem polymer gewonnenem siliciumcarbid

Country Status (4)

Country Link
EP (2) EP4407079A3 (de)
CN (2) CN114000197B (de)
TW (5) TW202540507A (de)
WO (1) WO2017053883A1 (de)

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EP3382067B1 (de) * 2017-03-29 2021-08-18 SiCrystal GmbH Siliciumcarbidsubstrat und verfahren zur züchtung von sic-einkristallkörpern
EP3382068B1 (de) 2017-03-29 2022-05-18 SiCrystal GmbH Siliciumcarbidsubstrat und verfahren zur züchtung von sic-einkristall-ingots
CN110921670B (zh) * 2018-09-19 2022-01-07 比亚迪股份有限公司 碳化硅及其制备方法
EP3951026A4 (de) * 2019-03-29 2022-12-21 Kwansei Gakuin Educational Foundation Vorrichtung zur herstellung eines halbleitersubstrats mit temperaturgradienteninversionsvorrichtung und verfahren zur herstellung eines halbleitersubstrats
CN110396717B (zh) * 2019-07-12 2020-07-28 山东天岳先进材料科技有限公司 高质量高纯半绝缘碳化硅单晶、衬底及其制备方法
TWI698397B (zh) 2019-11-11 2020-07-11 財團法人工業技術研究院 碳化矽粉體的純化方法
EP4081674A1 (de) * 2019-12-27 2022-11-02 Wolfspeed, Inc. Siliziumkarbidwafer mit grossem durchmesser
US12006591B2 (en) 2020-03-02 2024-06-11 Ii-Vi Advanced Materials, Llc Method for preparing an aluminum doped silicon carbide crystal by providing a compound including aluminum and oxygen in a capsule comprised of a first and second material
CN111270304A (zh) * 2020-03-27 2020-06-12 江苏超芯星半导体有限公司 一种制备4h碳化硅单晶的方法
CN113818081A (zh) * 2020-06-18 2021-12-21 盛新材料科技股份有限公司 半绝缘单晶碳化硅块材以及粉末
TWI771183B (zh) * 2020-10-20 2022-07-11 環球晶圓股份有限公司 碳化矽晶圓的拋光方法
CN114388347B (zh) * 2020-10-20 2025-08-12 环球晶圆股份有限公司 碳化硅晶片的抛光方法
US12125701B2 (en) 2020-12-15 2024-10-22 Wolfspeed, Inc. Large dimension silicon carbide single crystalline materials with reduced crystallographic stress
CN117957635A (zh) * 2021-07-09 2024-04-30 帕里杜斯有限公司 SiC P型和低电阻率晶体、晶棒、晶圆和设备及其制造方法
US20230064070A1 (en) * 2021-08-30 2023-03-02 Auo Crystal Corporation Semiconductor processing equipment part and method for making the same
CN114804113B (zh) * 2022-05-26 2024-02-02 哈尔滨晶彩材料科技有限公司 杂化官能度硅烷无引发悬浮聚合制备高纯SiC多晶源粉的方法
US20240371945A1 (en) * 2023-05-05 2024-11-07 Globalwafers Co., Ltd. Silicon carbide substrate and manufacturing method thereof
US12438001B1 (en) * 2024-04-05 2025-10-07 Wolfspeed, Inc. Off axis laser-based surface processing operations for semiconductor wafers
US12434330B1 (en) 2024-04-05 2025-10-07 Wolfspeed, Inc. Laser-based surface processing for semiconductor workpiece
US12269123B1 (en) 2024-04-05 2025-04-08 Wolfspeed, Inc. Laser edge shaping for semiconductor wafers
CN118718882B (zh) * 2024-08-30 2025-04-04 浙江晶越半导体有限公司 一种用于生产无色莫桑石的坩埚及生产无色莫桑石的方法
CN119061472A (zh) * 2024-11-06 2024-12-03 浙江大学杭州国际科创中心 用于碳化硅外延生长的石墨件的清洗方法及碳化硅外延生长装置

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Also Published As

Publication number Publication date
EP4407079A2 (de) 2024-07-31
TW201821656A (zh) 2018-06-16
TW202540507A (zh) 2025-10-16
TWI770769B (zh) 2022-07-11
TW202413743A (zh) 2024-04-01
EP3353339A1 (de) 2018-08-01
TWI885627B (zh) 2025-06-01
TW202117101A (zh) 2021-05-01
TWI820738B (zh) 2023-11-01
TW202244337A (zh) 2022-11-16
TWI719164B (zh) 2021-02-21
EP4407079A3 (de) 2024-10-30
CN108463580A (zh) 2018-08-28
CN114000197A (zh) 2022-02-01
CN108463580B (zh) 2021-11-12
WO2017053883A1 (en) 2017-03-30
CN114000197B (zh) 2025-01-10

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