EP3396703A4 - Mécanisme de support de plaquette, appareil de dépôt chimique en phase vapeur et procédé de fabrication de plaquette épitaxiale - Google Patents

Mécanisme de support de plaquette, appareil de dépôt chimique en phase vapeur et procédé de fabrication de plaquette épitaxiale Download PDF

Info

Publication number: EP3396703A4
Authority: EP; European Patent Office
Prior art keywords: vapor deposition; chemical vapor; supporting mechanism; deposition apparatus; wafer
Prior art date: 2015-12-21
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

EP16878443.7A

Other languages

German (de)

English (en)

Other versions

EP3396703B1 (fr

EP3396703A1 (fr

Inventor

Jia Yu

Naoto Ishibashi

Keisuke Fukada

Tomoya Utashiro

Hironori Atsumi

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Resonac Corp

Original Assignee

Showa Denko KK

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2015-12-21

Filing date

2016-12-12

Publication date

2019-08-21

2016-12-12 Application filed by Showa Denko KK filed Critical Showa Denko KK

2018-10-31 Publication of EP3396703A1 publication Critical patent/EP3396703A1/fr

2019-08-21 Publication of EP3396703A4 publication Critical patent/EP3396703A4/fr

2023-06-07 Application granted granted Critical

2023-06-07 Publication of EP3396703B1 publication Critical patent/EP3396703B1/fr

Status Active legal-status Critical Current

2036-12-12 Anticipated expiration legal-status Critical

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
- H10P72/3306—Horizontal transfer of a single workpiece
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
- H10P72/18—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] characterised by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel

Landscapes

Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
General Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Crystallography & Structural Chemistry (AREA)
Mechanical Engineering (AREA)
Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Chemical Vapour Deposition (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

EP16878443.7A 2015-12-21 2016-12-12 Mécanisme de support de plaquette, appareil de dépôt chimique en phase vapeur et procédé de fabrication de plaquette épitaxiale Active EP3396703B1 (fr)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2015249024A JP6539929B2 (ja)	2015-12-21	2015-12-21	ウェハ支持機構、化学気相成長装置およびエピタキシャルウェハの製造方法
PCT/JP2016/086898 WO2017110552A1 (fr)	2015-12-21	2016-12-12	Mécanisme de support de plaquette, appareil de dépôt chimique en phase vapeur et procédé de fabrication de plaquette épitaxiale

Publications (3)

Publication Number	Publication Date
EP3396703A1 EP3396703A1 (fr)	2018-10-31
EP3396703A4 true EP3396703A4 (fr)	2019-08-21
EP3396703B1 EP3396703B1 (fr)	2023-06-07

Family

ID=59090209

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP16878443.7A Active EP3396703B1 (fr)	2015-12-21	2016-12-12	Mécanisme de support de plaquette, appareil de dépôt chimique en phase vapeur et procédé de fabrication de plaquette épitaxiale

Country Status (6)

Country	Link
US (1)	US11427929B2 (fr)
EP (1)	EP3396703B1 (fr)
JP (1)	JP6539929B2 (fr)
KR (1)	KR102143287B1 (fr)
CN (1)	CN108475635B (fr)
WO (1)	WO2017110552A1 (fr)

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CN109423626B (zh) *	2017-08-30	2021-07-09	胜高股份有限公司	成膜装置、成膜用托盘、成膜方法、成膜用托盘的制造方法
JP7322365B2 (ja) *	2018-09-06	2023-08-08	株式会社レゾナック	サセプタ及び化学気相成長装置
DE102019132933A1 (de) *	2018-12-10	2020-06-10	Showa Denko K.K.	Suszeptor und vorrichtung zur chemischen gasphasenabscheidung
EP3990680A4 (fr) *	2019-06-25	2023-01-11	Picosun Oy	Protection de face arrière de substrat
JP7325260B2 (ja) *	2019-08-21	2023-08-14	株式会社ニューフレアテクノロジー	真空装置
US12522949B2 (en) *	2019-10-03	2026-01-13	Lpe S.P.A.	Treating arrangement with storage chamber and epitaxial reactor
JP7619019B2 (ja) *	2020-11-24	2025-01-22	株式会社レゾナック	サセプタ、ｃｖｄ装置
JP2022133684A (ja)	2021-03-02	2022-09-14	株式会社ジェイテクトサーモシステム	熱処理装置
JP2022133685A (ja)	2021-03-02	2022-09-14	株式会社ジェイテクトサーモシステム	熱処理装置
CN117096073B (zh) *	2023-10-16	2023-12-19	凯德芯贝(沈阳)石英有限公司	一种半导体芯片气相沉积石英架及其制备和使用方法

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2015
- 2015-12-21 JP JP2015249024A patent/JP6539929B2/ja active Active
2016
- 2016-12-12 US US16/063,391 patent/US11427929B2/en active Active
- 2016-12-12 KR KR1020187016953A patent/KR102143287B1/ko active Active
- 2016-12-12 WO PCT/JP2016/086898 patent/WO2017110552A1/fr not_active Ceased
- 2016-12-12 EP EP16878443.7A patent/EP3396703B1/fr active Active
- 2016-12-12 CN CN201680071748.8A patent/CN108475635B/zh active Active

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Also Published As

Publication number	Publication date
WO2017110552A1 (fr)	2017-06-29
EP3396703B1 (fr)	2023-06-07
JP2017117850A (ja)	2017-06-29
CN108475635B (zh)	2022-08-02
US11427929B2 (en)	2022-08-30
EP3396703A1 (fr)	2018-10-31
CN108475635A (zh)	2018-08-31
US20180371640A1 (en)	2018-12-27
JP6539929B2 (ja)	2019-07-10
KR20180082574A (ko)	2018-07-18
KR102143287B1 (ko)	2020-08-10

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