EP3496147A4 - Élément d'imagerie, élément d'imagerie multicouche et dispositif d'imagerie à semi-conducteur - Google Patents

Élément d'imagerie, élément d'imagerie multicouche et dispositif d'imagerie à semi-conducteur Download PDF

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Publication number
EP3496147A4
EP3496147A4 EP17836647.2A EP17836647A EP3496147A4 EP 3496147 A4 EP3496147 A4 EP 3496147A4 EP 17836647 A EP17836647 A EP 17836647A EP 3496147 A4 EP3496147 A4 EP 3496147A4
Authority
EP
European Patent Office
Prior art keywords
imaging element
imaging
multilayer
semiconductor
imaging device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP17836647.2A
Other languages
German (de)
English (en)
Other versions
EP3496147A1 (fr
Inventor
Masashi Bando
Hideaki Mogi
Iwao Yagi
Shintarou HIRATA
Tetsuji Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Group Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of EP3496147A1 publication Critical patent/EP3496147A1/fr
Publication of EP3496147A4 publication Critical patent/EP3496147A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Electroluminescent Light Sources (AREA)
EP17836647.2A 2016-08-03 2017-06-27 Élément d'imagerie, élément d'imagerie multicouche et dispositif d'imagerie à semi-conducteur Withdrawn EP3496147A4 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016152523 2016-08-03
PCT/JP2017/023628 WO2018025540A1 (fr) 2016-08-03 2017-06-27 Élément d'imagerie, élément d'imagerie multicouche et dispositif d'imagerie à semi-conducteur

Publications (2)

Publication Number Publication Date
EP3496147A1 EP3496147A1 (fr) 2019-06-12
EP3496147A4 true EP3496147A4 (fr) 2019-08-14

Family

ID=61072863

Family Applications (1)

Application Number Title Priority Date Filing Date
EP17836647.2A Withdrawn EP3496147A4 (fr) 2016-08-03 2017-06-27 Élément d'imagerie, élément d'imagerie multicouche et dispositif d'imagerie à semi-conducteur

Country Status (6)

Country Link
US (1) US20190157331A1 (fr)
EP (1) EP3496147A4 (fr)
JP (2) JP7003919B2 (fr)
KR (2) KR20220057648A (fr)
CN (1) CN109564926A (fr)
WO (1) WO2018025540A1 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111448663B (zh) 2017-12-05 2024-04-16 索尼公司 摄像元件、层叠型摄像元件和固态摄像装置
JP2019176136A (ja) * 2018-03-29 2019-10-10 株式会社リコー 光電変換素子、及び光電変換素子モジュール
CN112005394A (zh) * 2018-03-19 2020-11-27 株式会社理光 光电转换元件和光电转换元件模块
TWI820114B (zh) * 2018-04-20 2023-11-01 日商索尼股份有限公司 攝像元件、積層型攝像元件及固體攝像裝置
TWI800636B (zh) * 2018-04-20 2023-05-01 日商索尼股份有限公司 攝像元件、積層型攝像元件及固體攝像裝置
DE112019002867T5 (de) 2018-06-05 2021-04-22 Sony Semiconductor Solutions Corporation Bildgebungsvorrichtung
EP3660935A1 (fr) * 2018-11-14 2020-06-03 Samsung Electronics Co., Ltd. Dispositifs de conversion photoélectrique et capteurs organiques et dispositifs électroniques
CN111509136B (zh) * 2019-01-31 2021-12-28 武汉华星光电半导体显示技术有限公司 Oled显示面板
CN113557614A (zh) 2019-03-28 2021-10-26 索尼集团公司 固态摄像元件、固态摄像元件的制造方法、光电转换元件、摄像装置和电子设备
TWI743628B (zh) * 2019-12-18 2021-10-21 瑞昱半導體股份有限公司 影像過曝修正方法與電路系統
JP7753193B2 (ja) * 2020-03-31 2025-10-14 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
DE112023001732T5 (de) * 2022-03-17 2025-01-16 Sony Group Corporation Fotoelektrisches umwandlungselement, fotodetektionsvorrichtung und fotodetektionssystem
KR20240158280A (ko) * 2022-05-12 2024-11-04 후지필름 가부시키가이샤 광전 변환 소자, 촬상 소자, 광센서, 화합물

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010067642A (ja) * 2008-09-08 2010-03-25 Kyoto Univ 光電変換素子、その製造方法、及び太陽電池
WO2013171549A1 (fr) * 2012-05-18 2013-11-21 Robert Bosch (Sea) Pte. Ltd. Cellule solaire organique en tandem
WO2014055976A1 (fr) * 2012-10-05 2014-04-10 University Of Southern California Sensibilisation à l'énergie des accepteurs et des donneurs dans des systèmes photovoltaïques organiques
WO2015170219A1 (fr) * 2014-05-07 2015-11-12 Sabic Global Technologies B.V. Cristallisation d'additifs au niveau de jonctions p/n de couches photoactives à hétérojonction massive
US20160099430A1 (en) * 2014-10-02 2016-04-07 Samsung Electronics Co., Ltd. Organic photoelectronic device and image sensor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006100766A (ja) 2004-08-31 2006-04-13 Fuji Photo Film Co Ltd 光電変換素子、及び撮像素子、並びに、これらに電場を印加する方法。
JP4719597B2 (ja) * 2006-03-16 2011-07-06 富士フイルム株式会社 光電変換素子及び固体撮像素子
JP4384198B2 (ja) * 2007-04-03 2009-12-16 シャープ株式会社 固体撮像装置およびその製造方法、電子情報機器
JP5969843B2 (ja) * 2012-07-17 2016-08-17 日本放送協会 有機光電変換素子、及び、これを含む受光素子
JP2014154653A (ja) * 2013-02-07 2014-08-25 Ricoh Co Ltd 有機光電変換素子、及びその製造方法、並びに太陽電池
JP2015103735A (ja) * 2013-11-27 2015-06-04 ソニー株式会社 固体撮像素子および電子機器
JP6552257B2 (ja) * 2015-04-30 2019-07-31 キヤノン株式会社 １位、１’位、３位、３’位に複素単環基を有する、２，２’−ビベンゾ［ｄ］イミダゾリデン化合物、それを有する有機発光素子、表示装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010067642A (ja) * 2008-09-08 2010-03-25 Kyoto Univ 光電変換素子、その製造方法、及び太陽電池
WO2013171549A1 (fr) * 2012-05-18 2013-11-21 Robert Bosch (Sea) Pte. Ltd. Cellule solaire organique en tandem
WO2014055976A1 (fr) * 2012-10-05 2014-04-10 University Of Southern California Sensibilisation à l'énergie des accepteurs et des donneurs dans des systèmes photovoltaïques organiques
WO2015170219A1 (fr) * 2014-05-07 2015-11-12 Sabic Global Technologies B.V. Cristallisation d'additifs au niveau de jonctions p/n de couches photoactives à hétérojonction massive
US20160099430A1 (en) * 2014-10-02 2016-04-07 Samsung Electronics Co., Ltd. Organic photoelectronic device and image sensor

Also Published As

Publication number Publication date
JP2022036113A (ja) 2022-03-04
KR20190032347A (ko) 2019-03-27
CN109564926A (zh) 2019-04-02
WO2018025540A1 (fr) 2018-02-08
KR20220057648A (ko) 2022-05-09
JPWO2018025540A1 (ja) 2019-05-30
US20190157331A1 (en) 2019-05-23
EP3496147A1 (fr) 2019-06-12
JP7003919B2 (ja) 2022-01-21
KR102400663B1 (ko) 2022-05-23

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