EP3580786A2 - Procédé permettant de texturer une surface d'un matériau semi-conducteur ainsi que dispositif permettant la mise en oeuvre dudit procédé - Google Patents

Procédé permettant de texturer une surface d'un matériau semi-conducteur ainsi que dispositif permettant la mise en oeuvre dudit procédé

Info

Publication number
EP3580786A2
EP3580786A2 EP18707621.1A EP18707621A EP3580786A2 EP 3580786 A2 EP3580786 A2 EP 3580786A2 EP 18707621 A EP18707621 A EP 18707621A EP 3580786 A2 EP3580786 A2 EP 3580786A2
Authority
EP
European Patent Office
Prior art keywords
basin
semiconductor material
basins
etching solution
transport direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP18707621.1A
Other languages
German (de)
English (en)
Inventor
Holger KÜHNLEIN
Wolfgang Dümpelfeld
John BURSCHIK
Benedikt STRAUB
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RENA Technologies GmbH
Original Assignee
RENA Technologies GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RENA Technologies GmbH filed Critical RENA Technologies GmbH
Publication of EP3580786A2 publication Critical patent/EP3580786A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/137—Batch treatment of the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0426—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3314—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers

Definitions

  • the invention relates to a method for texturing Wenig ⁇ least a portion of a surface of a semiconductor material according to the preamble of claim 1 and an apparatus for performing this method according to the preamble of independent, subject claim.
  • the semiconductor materials used in the manufacture of semiconductor devices are generally present as Halbleitersub ⁇ strate, by which two-dimensional body with two large-scale pages are to be understood.
  • substrates are referred to as semiconductor wafers, regularly referred to as wafers.
  • Such a substrate does not necessarily consist of a solid material, as is the case with a silicon wafer.
  • a substrate is basically also understood to mean a carrier substrate with a semiconductor layer arranged thereon. If the semiconductor material is in the form of substrates, these substrates often have a sawn surface. This is in particular ⁇ special in substrates made of solid material, such as the mentioned silicon wafers or silicon wafers, the case, since these are usually cut down by a block of semi ⁇ conductor material. But even if the semiconductor material is in a different shape, often a sawn surface is present.
  • wire saws As a wire saw, a wire can be used, which in a release agent suspension, referred to in the English language as a slurry, is moved or occupied by diamonds wire. Comes with diamonds occupied
  • Wire for use this is referred to herein as diamond wire saw or diamond wire saws.
  • Wire-sawn semiconductor materials have a certain roughness at their cut surfaces. When sawing the semiconductor material is partially pulverized, resulting in losses of Halbleitermate ⁇ rial. These losses are in the above described Trennläpp compiler with the Move ⁇ th in the release suspension wire greater than in diamond wire sawing. For this reason, the use of diamond wire saws is increasingly being sought.
  • the object of the present invention is to provide a method by means of which semiconductor materials having a less rough surface are provided
  • the invention has for its object to provide a pre ⁇ direction for performing this method. This object is achieved by a device having the features of the independent device claim.
  • the inventive method for texturing at least ei ⁇ nes part of a surface of a semiconductor material provides that which is brought at least a portion of the surface with an etching solution in contact. Further, the used Wenig ⁇ least a part of the surface electrically conductively connected to a positive pole of a power source and a positive electrode. A negative electrode arranged in the etching solution is electrically conductively connected to a negative pole of the current source. By electrical current from the positive pole to the nuspol is guided, the at least a portion of the upper ⁇ surface of the semiconductor material is etched electrochemically.
  • the etching solution simultaneously serves as an electrolyte, so that the electric current can be passed through the etching solution.
  • the electrical current can the Anson ⁇ th z in Textur michur michsvon solutions oxidant contained, often to replace nitric acid, by providing electrical holes on the surface of the semiconductor material. These allow a reaction with the etching solution and thus the texturing of the surface of the semiconductor material.
  • an acid etching solution as an etching solution USAGE ⁇ det.
  • an aqueous solution containing hydrogen fluoride is particularly preferred.
  • Multicrystalline semiconductor material is preferably textured because alkaline etching solutions can not be used with this material.
  • the process has proven particularly successful in the texturing of silicon. Therefore, as a semiconductor material advantageously ⁇ as silicon, particularly preferably multicrystalline Silizi ⁇ to be used.
  • substantially only a bottom Be ⁇ ten Design of the semiconductor material is textured.
  • these lower-side side surface wel ⁇ che following part is substantially only as short bottom loading records, is brought into contact with the etching solution.
  • the said lower-side side surface could be a downwardly facing surface of the semiconductor material ⁇ be distinguished.
  • a surface of a substrate is textured.
  • a substrate preferably a solar cell substrate
  • the substrate does not necessarily have to consist of a solid material, but also a carrier substrate with a semiconductor layer arranged thereon on such a substrate, has already been set out above.
  • the inventive method has been particularly advantageous in the texturing of substrates.
  • a mak ⁇ roporous semiconductor material structure is formed by means of electrochemical etching.
  • Whose structural ⁇ structures have a size in the range of 0.2 to 3 pm. With such macroporous structures, textures with very low reflectance values could be realized.
  • micro- or mesoporous structures ⁇ can be formed alternatively, where this is appropriate in the particular application.
  • an etching solution ver ⁇ containing at least one surfactant For example, a product with the trade name Suract C125 can be used as the surfactant.
  • a product with the trade name Suract C125 can be used as the surfactant.
  • Tensidsgehalts in the etching solution can be made to a form of in the electrochemical etching out ⁇ formed structures influence.
  • the size of formed pores can be influenced.
  • the semiconductor material of a Halbleiterma ⁇ terialharm is preferably cut with a wire saw and texturized a sectional surface of the semiconductor material according ⁇ following. It has been shown that such cut surfaces can be reliably and well textured. Particularly preferred as wire saw a diamond wire saw is used. In this Verbin ⁇ -making process according to the invention has proven particularly advantageous, since even with diamond wire saws resultie ⁇ -saving cut surfaces which have reduced roughness ⁇ , can be reliably and well textured. What is to be understood before ⁇ lying under a diamond, set forth in the introduction. In a preferred embodiment, the semiconductor material is ⁇ in a fürlaufanläge by several in one
  • Transport direction successively arranged, the etchant ent ⁇ holding basin transported.
  • the transport can be carried out such that the semiconductor material is completely immersed in the contained in the basin etching solution, or such that only a part of the surface of the semiconductor material with the arrayed in pools etching solution ge ⁇ is brought into contact.
  • the latter makes it possible in particular for a one-sided texturing of the semiconductor material.
  • Currency ⁇ rend of transporting the semiconductor material through the plurality of tanks is brought at least a part of the surface of the semiconductor material at times simultaneously with the ⁇ tzlö ⁇ solution of two in the transporting direction successively angeordne- th pool in contact.
  • a positive electrode arranged in a first of said two basins in the etching solution is electrically conductively connected to the positive pole of the current source as well as in a second of the named ones two basins the arranged in the etching solution negative electrode electrically connected to the negative terminal of the power source and the electrical current from the arranged in the first Be ⁇ cken, positive electrode via the semiconductor material to the arranged in the second basin, negative electrode.
  • the process can be carried out on an industrial scale in a continuous plant.
  • the ⁇ described in the second reservoir above proceed electrochemical etching and are electrochemically etched in the second basin.
  • the contacting of Wenig ⁇ least a portion of the surface of the semiconductor material it ⁇ thereby follows comfortably over the arranged in the first bowl etching solution with no moving parts. The maintenance of the contacting device is therefore low.
  • Another way to switch the inequalities described eben, is to control or guide the electric Stro ⁇ mes such regulate that in each of the ge ⁇ called several pools of a ratio in a respective pool with the etching solution in contact standing surface we ⁇ is constant tendonss of a part of the surface of the semiconductor material to a current flowing in the respective basin, electricity.
  • This constancy condition is met here for ever ⁇ stays awhile basin during times in which the stands Wenig ⁇ least a portion of the surface with the included in the respective pools etching solution in contact.
  • the half ⁇ conductor material is transported in a fürlaufanläge by the ⁇ tzlö ⁇ solution containing basin, in which the negati ⁇ ve electrode is arranged.
  • the at least one part of the surface of the semiconductor material is brought into contact with the ⁇ tzlö ⁇ solution.
  • at least as time ⁇ the at least one part of the surface electrically lei ⁇ tend connected to the positive pole of the power source and electrical ⁇ shear flow is led from the positive pole to the negative pole.
  • the electrically conductive connection of the at least a portion of the surface of the semiconductor material with the positive can, in principle, realized in any manner known per se ⁇ the, for example by means of sliding contacts or in the
  • the elektrochemi ⁇ rule etching run compared with a known wet ⁇ chemical texturing process using an etching solution containing hydrofluoric acid and nitric acid comparatively slowly.
  • etching solution containing hydrofluoric acid and nitric acid comparatively slowly.
  • Z solution is particularly preferred ⁇ again etched electrochemically ge after etching by means of the beschrie ⁇ surrounded aqueous Textuetz. Also in this electrochemical etching step, etching times of one to two minutes have been proven. As hasrontge ⁇ is, the irradiated light on the at least ei ⁇ NEN part of the surface of the semiconductor material can be further reduced by means of this new electrochemical etching reflections.
  • the method of the SEN we ⁇ antecedents a part of the surface of the semiconductor material with ⁇ means of an aqueous solution z Textuetz is etched prior to the electrochemical etching, which serstoff Fluorwas- and contains nitric acid. It has been shown, that may also be associated, in suitable applications, a shortening of the process time with satisfactory TEXTU ⁇ reindeer, in particular diamantdrahtgesägtem semiconductor material, in this way. Electro ⁇ chemically etched in this variant execution for a period of one to two minutes is preferred.
  • the device according to the invention has a Transportvorrich ⁇ tion, by means of which objects to be treated are transportable in a transport direction. Furthermore, several successively arranged in the transport direction pelvis provided, each having a treatment liquid contained ⁇ ten, in which one electrode is disposed at least.
  • an etching solution can be provided, preferably an acidic etching solution, and particularly preferably a fluorine water ⁇ material containing etching solution.
  • An improvement provides that in each case two immediately successively arranged pool of successively arranged in the transport ⁇ direction several pools corresponding to a first pool of two immediately successively arranged pool associated at least one electrode having a first polarity and a second pool of two immediately successively arranged pool supplied ⁇ hearing an electrode opposite at least one of the first polarity comprises second polarity. That two of the plurality of basins are arranged immediately one after another is to be understood as meaning that no other of the plurality of basins is arranged between them.
  • construction parts ⁇ such as transport rollers may well be provided between two immediately successively arranged Be ⁇ CKEN.
  • a portion of the object to be treated can be used in an electrophotographic ⁇ chemical etching as an electrode.
  • konventi ⁇ onelle contacting devices such as
  • a be in the direction of transport ⁇ seeks first basin of the plurality of consecutively arranged in the direction of transport pool and viewed in the direction Trans ⁇ port last pool of the plurality of successively arranged in the transport direction pool to extending in the transport direction lengths which differ from extending in the transport direction lengths of the remaining of the plurality in the transport direction successively to ⁇ ordered basin.
  • these lengths of the first and last pelvis are extended.
  • various types of loading ⁇ rich of the object to be treated are different electrochemically etched long, be a little extra work out ⁇ equalized.
  • all basins of the several in the transport direction successively arranged basin particularly preferably have a uniform length. The production cost can be reduced in this way.
  • all basins of the plurality of successively arranged in the transport direction pelvis apart from the first basin and the last basin, all basins of the plurality of successively arranged in the transport direction pelvis a uniform, extending in the transport direction length and a uniform, extending in the trans ⁇ port direction clear opening length P. on.
  • Two un ⁇ indirectly successively arranged pool of said plurality of tanks are in each case by a length T of one another beab ⁇ standet.
  • FIG. 1 A first embodiment of the invention
  • FIG. 2 Schematic representation of a second embodiment ⁇ example of the device according to the invention as well as the method according to the invention
  • Figure 3 shows a third embodiment of the invention
  • FIG. 1 Schematic representation of a sixth,sbei ⁇ game of the inventive method
  • Figure 1 illustrates a schematic representation of a first embodiment of the method according to the invention and a first embodiment of the inventive device for performing this method.
  • the Darge ⁇ presented für fürmaschine 1 has a transport device, which as an essential part transport rollers 59 ⁇ has, on which the objects, in the present embodiment ⁇ example, silicon solar cell substrates 2, in a transport ⁇ direction 57 through the fürlaufanläge 1 are transportable. Other, known per se components of the transport device are not shown for the sake of clarity. Successively in the transport direction 57, several basins 42a to 42f are provided.
  • each containing a treatment liquid wherein it is in the present embodiment containing a hydrogen fluoride etching solution 6 in which again electrodes 14, 18 are attached ⁇ arranged.
  • two adjacent tanks 42a to 42f have electrodes 14, 16 of different polarity.
  • a posi tive electrode 18 follows ⁇ 42b in the basin to the negative electrode 14 in basin 42a.
  • the negative electrodes 14 are connected by means of leads 12 to a negative pole with a negative terminal 10 of a current source 8. Accordingly, the positive electrodes are connected via leads 11 to the positive pole with a positive pole 9 of the power source 8.
  • each electrode 14, 18 may be provided, or more ⁇ re electrodes 14, 18 of the same polarity are powered by a common supply line.
  • the power supply is controlled means of a medium-connected to the current source 8 Steuerungsvor ⁇ direction 20, wherein the control apparatus 20 may be embodied as a control device.
  • the fürlaufanläge 1 is designed for a one-sided treatment, more precisely for a one-sided texturing, the Siliziumsolarzel ⁇ lensubstrate 2.
  • Lower-side side surfaces 4 of the Si ⁇ liziumsolarzellensubstrate 2, or shortly its underside is brought into contact with the contained in the tanks 42a to 42f etching solution. 6
  • etching solution is continuously pumped from a catch basin 40 by means of a fluid pump 55 via pipes 56 into the tanks 42a to 42f.
  • the left portions of the lower side faces in the tanks 42a, 42c, 42e serve as positive electrodes 16. Electric current is thus conducted from the plus pole 9 of the power source 8 via the silicon solar cell substrate 2 to the negative pole 10 of the power source 8 and the lower side face 4 is electrochemically etched in the positive electrode portions 16.
  • a macroporous semiconductor structure is formed.
  • microporous or mesoporous structures can also be formed. These structures represent a texture so ⁇ that the lower-side side surface 4 of the silicon solar cell substrates ⁇ is textured.
  • the right-hand part of the silicon solar cell substrate which could also be referred to as a head, is not electrochemically etched in the basin 42a.
  • An analogous inequality in the etching, ver ⁇ different sections of the lower side surface 4 results in the last basin 42 f.
  • the first basin 42a and the last basin 42f are extended with respect to the remaining pools 42b to 42e, which have a uniform length and a uniform clear opening length P 22, extended by a differential length L 26. This is calculated from a length of 0 28 to be treated, to be textured specifically, Siliziumsolarzel ⁇ lensubstrate 2, a distance T of 24 equally spaced basin 42a-f of said clear opening ⁇ length P 22 according to
  • C is a suitable in the manner described above ge ⁇ selected parameters. In the embodiment of Figure 1, the value 0 was selected for him.
  • the distance T between two adjacent tanks 42a to 42f causes the underside side surface 4 of the silicon solar cell substrate 2 not to be in contact with etching solution 6 in the area between two tanks 42a to 42f. In this way, a short circuit between adjacent tanks 42a to 42f can be avoided.
  • an optional air knife 61 is provided in the exemplary embodiment of FIG. 1 after each of the tanks 42a to 42f, by means of which remaining etching solution can be blown off.
  • FIG. 2 illustrates a further embodiment of he ⁇ inventive method as well as the invention Before ⁇ direction.
  • the fürlaufanläge 30 shown differs from the fürlaufanläge 1 of Figure 1, characterized in that Be ⁇ cken 62a to 62f uniform length are provided.
  • position detection devices 32a, provided 32f wel ⁇ che are connected by means of the control device 20th
  • An illustration of these compounds has been omitted for the sake of better clarity in FIG.
  • the ge ⁇ called position detection devices 32a, 32f ⁇ Posi tions of silicon solar cell substrates 2 are detected, and switched in dependence of their position by means of the current controller 20, the flow of electric current in the basin 62a and 62f. In this way can be compensated as described above Un ⁇ equality in the electrochemical etching or texturing, from left, middle and right portions of the silicon solar cell substrates in the basins 62a and 62f.
  • Figure 3 illustrates in a schematic representation of another embodiment of the method according to the invention.
  • only one basin 72 is provided here.
  • This is in turn fed by means of a fluid pump from the catch basin 74, so that here too the overflowing etching solution 51 is present.
  • Figure 3 shows a plausiblennenanläge, in which the Sili ⁇ ziumsolarzellensubstrate 2 and thus also their underside side surfaces 4 are connected by means of the leads 11 to the positive pole with the positive pole 9 of the power source.
  • a contact device is required for each silicon solar cell substrate 2.
  • the contact device is not shown in detail in Figure 3.
  • the silicon solar cell substrates 2 running contact arms or sliding contacts are provided.
  • the current source 8 when the current source 8 is switched on, electric current is always conducted from the positive pole 9 to the negative pole, provided that at least one silicon solar cell substrate is located at least in part above the basin 72.
  • FIG. 4 Another embodiment of the procedural ⁇ proceedings of the present invention illustrates the schematic diagram of Figure 4.
  • ⁇ sem embodiment are first Siliziumsolarzellen- substrates by means of a diamond of a silicon ⁇ body, such as a silicon block, cut 80.
  • a sectional area of the silicon solar cells ⁇ substrates is electrochemically 82.
  • Textured This can ⁇ example, by means of a method described in the embodiments of the ren Figu- 1 to 3 take place.
  • schematically Darge ⁇ presented continuous flow systems 1, 30, 70 find use.
  • He invention ⁇ method according to the invention as well as before ⁇ direction have erwie ⁇ sen during texturing of means of diamond wire saws cut semiconductor materials, in particular Si ⁇ liziumsolarzellensubstraten, be particularly advantageous.
  • etching rates in the electrochemical etching according to the invention are comparatively low.
  • a texture etching 86 follows with an aqueous texture etching solution containing hydrogen fluoride and nitric acid.
  • the embodiment of Figure 5 provides an optional step of re-electrochemical etching 88 for a period of one to two minutes. Analogously to the initial electrochemical etching, this method step can also be carried out with the method and device examples explained with reference to FIGS. 1 to 3.
  • FIG. 6 illustrates, on the basis of a schematic representation, a further exemplary embodiment of the method according to the invention. This differs from that of Figure 5 primarily in that initially with the aqueous Texturisers texture ⁇ is etched 90 before one to two minutes is etched electrochemically 92. Again, this electro-chemical etching for example with the explained with reference to Figures 1 to 3 Procedures and devices are performed.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)
  • Manufacturing & Machinery (AREA)

Abstract

L'invention concerne un procédé permettant de texturer au moins une partie (4) d'une surface d'un matériau semi-conducteur (2), selon lequel la ou les parties (4) de la surface sont mises en contact avec une solution d'attaque (6), la ou les parties (4) de la surface sont connectées de manière électroconductrice à un pôle positif (9) d'une source de courant (8) et utilisées en tant qu'électrode positive (16), une électrode négative (14) agencée dans la solution d'attaque (6) est connectée de manière électroconductrice à un pôle négatif (10) de la source de courant (18), et guide un courant électrique du pôle positif (9) vers le pôle négatif (10), de sorte que la ou les parties (4) de la surface sont soumises à une attaque électrochimique. L'invention concerne également un dispositif (1; 30; 70) permettant la mise en œuvre du procédé.
EP18707621.1A 2017-02-09 2018-02-08 Procédé permettant de texturer une surface d'un matériau semi-conducteur ainsi que dispositif permettant la mise en oeuvre dudit procédé Withdrawn EP3580786A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102017102632 2017-02-09
PCT/DE2018/100110 WO2018145699A2 (fr) 2017-02-09 2018-02-08 Procédé permettant de texturer une surface d'un matériau semi-conducteur ainsi que dispositif permettant la mise en œuvre dudit procédé

Publications (1)

Publication Number Publication Date
EP3580786A2 true EP3580786A2 (fr) 2019-12-18

Family

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EP18707621.1A Withdrawn EP3580786A2 (fr) 2017-02-09 2018-02-08 Procédé permettant de texturer une surface d'un matériau semi-conducteur ainsi que dispositif permettant la mise en oeuvre dudit procédé

Country Status (7)

Country Link
US (1) US20200044100A1 (fr)
EP (1) EP3580786A2 (fr)
JP (1) JP2020508563A (fr)
KR (1) KR20190116266A (fr)
CN (1) CN110383494A (fr)
TW (1) TW201841381A (fr)
WO (1) WO2018145699A2 (fr)

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DE102020103531A1 (de) * 2020-02-11 2021-08-12 RENA Technologies GmbH Elektrode, deren Verwendung, Akkumulator sowie Verfahren zur Herstellung einer Elektrode

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Publication number Priority date Publication date Assignee Title
KR101437860B1 (ko) * 2008-03-23 2014-09-12 주식회사 뉴파워 프라즈마 다공성 반사 방지막을 갖는 광기전력소자 및 제조 방법
JP2011515872A (ja) * 2008-03-25 2011-05-19 アプライド マテリアルズ インコーポレイテッド 結晶太陽電池の表面クリーニング及び凹凸形成プロセス
EP2715779A2 (fr) * 2011-05-21 2014-04-09 Meyer Burger Technology AG Procédés pour le traitement de surface de solides en métal, métalloïdes et semi-conducteurs
CN103597604B (zh) * 2011-06-03 2016-01-20 三洋电机株式会社 太阳能电池的制造方法
DE102013219886A1 (de) * 2013-10-01 2015-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur kontinuierlichen Herstellung poröser Siliciumschichten
DE102013221522A1 (de) * 2013-10-01 2015-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur kontinuierlichen Herstellung poröser Siliciumschichten
DE102013219839B4 (de) * 2013-10-01 2018-08-30 RENA Technologies GmbH Vorrichtung zur Porosifizierung eines Siliziumsubstrates
DE102015121636A1 (de) * 2015-12-11 2017-06-14 Nexwafe Gmbh Vorrichtung und Verfahren zum einseitigen Ätzen einer Halbleiterschicht
DE102017110297A1 (de) * 2016-12-30 2018-07-05 RENA Technologies GmbH Verfahren und Vorrichtung zur Behandlung einer Objektoberfläche mittels einer Behandlungslösung

Also Published As

Publication number Publication date
JP2020508563A (ja) 2020-03-19
US20200044100A1 (en) 2020-02-06
CN110383494A (zh) 2019-10-25
WO2018145699A3 (fr) 2018-10-25
KR20190116266A (ko) 2019-10-14
WO2018145699A2 (fr) 2018-08-16
TW201841381A (zh) 2018-11-16

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