EP3673513A4 - Barrière arrière à base d'alliage numérique destinée à des transistors au nitrure à canal p - Google Patents

Barrière arrière à base d'alliage numérique destinée à des transistors au nitrure à canal p Download PDF

Info

Publication number
EP3673513A4
EP3673513A4 EP17922088.4A EP17922088A EP3673513A4 EP 3673513 A4 EP3673513 A4 EP 3673513A4 EP 17922088 A EP17922088 A EP 17922088A EP 3673513 A4 EP3673513 A4 EP 3673513A4
Authority
EP
European Patent Office
Prior art keywords
rear barrier
nitride transistors
digital alloy
based rear
channel nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP17922088.4A
Other languages
German (de)
English (en)
Other versions
EP3673513A1 (fr
Inventor
Rongming Chu
Yu Cao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HRL Laboratories LLC
Original Assignee
HRL Laboratories LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HRL Laboratories LLC filed Critical HRL Laboratories LLC
Publication of EP3673513A1 publication Critical patent/EP3673513A1/fr
Publication of EP3673513A4 publication Critical patent/EP3673513A4/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/472—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
    • H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
    • H10D62/8164—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation comprising only semiconductor materials 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
EP17922088.4A 2017-08-25 2017-08-25 Barrière arrière à base d'alliage numérique destinée à des transistors au nitrure à canal p Pending EP3673513A4 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2017/048753 WO2019040083A1 (fr) 2017-08-25 2017-08-25 Barrière arrière à base d'alliage numérique destinée à des transistors au nitrure à canal p

Publications (2)

Publication Number Publication Date
EP3673513A1 EP3673513A1 (fr) 2020-07-01
EP3673513A4 true EP3673513A4 (fr) 2021-04-07

Family

ID=65439473

Family Applications (1)

Application Number Title Priority Date Filing Date
EP17922088.4A Pending EP3673513A4 (fr) 2017-08-25 2017-08-25 Barrière arrière à base d'alliage numérique destinée à des transistors au nitrure à canal p

Country Status (3)

Country Link
EP (1) EP3673513A4 (fr)
CN (1) CN111033750B (fr)
WO (1) WO2019040083A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115458406B (zh) * 2022-03-18 2025-11-25 西安电子科技大学 基于ScAlN数字合金的极化可调HEMT及其制备方法
CN114937688B (zh) * 2022-05-17 2025-06-03 江苏镓宏半导体有限公司 一种氮化镓外延结构及半导体器件及制备方法
CN118676199A (zh) * 2024-08-21 2024-09-20 深圳平湖实验室 半导体器件及其制备方法、芯片、电子设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100276732A1 (en) * 2007-12-26 2010-11-04 Yuji Ando Semiconductor device
US20140264379A1 (en) * 2013-03-15 2014-09-18 The Government Of The United States Of America, As Represented By The Secretary Of The Navy III-Nitride P-Channel Field Effect Transistor with Hole Carriers in the Channel
US20150303290A1 (en) * 2014-04-21 2015-10-22 Panasonic Intellectual Property Management Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6942150B2 (en) * 1993-11-24 2005-09-13 Metrologic Instruments, Inc. Web-based mobile information access terminal
US7030428B2 (en) * 2001-12-03 2006-04-18 Cree, Inc. Strain balanced nitride heterojunction transistors
US7612390B2 (en) * 2004-02-05 2009-11-03 Cree, Inc. Heterojunction transistors including energy barriers
US7709859B2 (en) * 2004-11-23 2010-05-04 Cree, Inc. Cap layers including aluminum nitride for nitride-based transistors
US7615774B2 (en) * 2005-04-29 2009-11-10 Cree.Inc. Aluminum free group III-nitride based high electron mobility transistors
US9711633B2 (en) * 2008-05-09 2017-07-18 Cree, Inc. Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions
CN102265412A (zh) * 2008-12-16 2011-11-30 加州理工学院 光电探测器的数字合金吸收体
US8217480B2 (en) * 2010-10-22 2012-07-10 California Institute Of Technology Barrier infrared detector
US8617927B1 (en) * 2011-11-29 2013-12-31 Hrl Laboratories, Llc Method of mounting electronic chips
WO2013155108A1 (fr) * 2012-04-09 2013-10-17 Transphorm Inc. Transistors au nitrure-iii n-polaires
US8860091B2 (en) * 2012-04-16 2014-10-14 Hrl Laboratories, Llc Group III-N HFET with a graded barrier layer
EP3285302B1 (fr) * 2013-02-15 2019-09-11 AZUR SPACE Solar Power GmbH Structure de couches pour un transistor normalement bloqué à nitrures d'éléments iii
US9202905B1 (en) * 2014-09-08 2015-12-01 Triquint Semiconductor, Inc. Digital alloy layer in a III-nitrade based heterojunction field effect transistor
US10347722B2 (en) * 2015-03-04 2019-07-09 Lehigh University Artificially engineered III-nitride digital alloy

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100276732A1 (en) * 2007-12-26 2010-11-04 Yuji Ando Semiconductor device
US20140264379A1 (en) * 2013-03-15 2014-09-18 The Government Of The United States Of America, As Represented By The Secretary Of The Navy III-Nitride P-Channel Field Effect Transistor with Hole Carriers in the Channel
US20150303290A1 (en) * 2014-04-21 2015-10-22 Panasonic Intellectual Property Management Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2019040083A1 *

Also Published As

Publication number Publication date
CN111033750B (zh) 2023-09-01
WO2019040083A1 (fr) 2019-02-28
EP3673513A1 (fr) 2020-07-01
CN111033750A (zh) 2020-04-17

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