EP3811414A1 - Appareil d'affichage et son procédé de fabrication - Google Patents

Appareil d'affichage et son procédé de fabrication

Info

Publication number
EP3811414A1
EP3811414A1 EP19853207.9A EP19853207A EP3811414A1 EP 3811414 A1 EP3811414 A1 EP 3811414A1 EP 19853207 A EP19853207 A EP 19853207A EP 3811414 A1 EP3811414 A1 EP 3811414A1
Authority
EP
European Patent Office
Prior art keywords
light emitting
substrate
inorganic light
display apparatus
encapsulation layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP19853207.9A
Other languages
German (de)
English (en)
Other versions
EP3811414A4 (fr
Inventor
Won Soon Park
Tack Mo Lee
Jung-Hoon Yoon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Priority claimed from PCT/KR2019/010405 external-priority patent/WO2020040483A1/fr
Publication of EP3811414A1 publication Critical patent/EP3811414A1/fr
Publication of EP3811414A4 publication Critical patent/EP3811414A4/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins

Definitions

  • the disclosure relates to a display apparatus capable of directly displaying an image by coupling a plurality of modules, each of the plurality of modules including a self-emissive inorganic light emitting diode is mounted on a substrate, to one another and a method of manufacturing the same.
  • a display apparatus is a type of an output device which visually displays information such as characters and figures, and images.
  • the demand for high luminance, high resolution, large size, high efficiency, and low power display apparatuses is continuously increasing. Accordingly, an Organic Light Emitting Diode (OLED) panel has been becoming more popular as a new display apparatus to replace a Liquid crystal display (LCD).
  • OLED Organic Light Emitting Diode
  • the OLED panel has some limitations such as the high price caused by a low production yield rate, the low reliability with a large size panel, and the durability that is affected by external surrounding such as water.
  • the inorganic light emitting display technology has its own challenges in transferring an inorganic light emitting diode in a very small size (having a size of several micrometers to several hundreds of micrometers) from a wafer to a substrate.
  • an inorganic light emitting diode in a very small size (having a size of several micrometers to several hundreds of micrometers) from a wafer to a substrate.
  • a method of manufacturing a display apparatus includes mounting a plurality of inorganic light emitting diodes on a mounting surface of a substrate; forming an encapsulation layer comprising a viscoelastic material on the mounting surface of the substrate to cover the plurality of inorganic light emitting diodes and the mounting surface of the substrate; assembling a plurality of unit modules including a first unit module and a second unit module to be adjacent to each other, each of the plurality of unit modules comprising the substrate, the plurality of inorganic light emitting diodes, and the encapsulation layer, the first unit module and the second unit module having a gap provided between the first and second unit modules; and changing viscoelasticity of a first encapsulation layer of the first unit module and a second encapsulation layer of the second unit module to visually hide the seam.
  • the mounting the plurality of inorganic light emitting diodes may include: separating he plurality of inorganic light emitting diodes from a wa
  • a shorter side of each of the plurality of inorganic light emitting diodes may have a size of 100 ⁇ m or less.
  • the viscoelastic material may include at least one of ethylene based polymers, acetate based polymers, ethylene vinyl acetate based polymers, olefin based polymers, or acrylic based polymers.
  • the viscoelasticity of the viscoelastic material may be lowered and the viscoelastic material may gain fluidity.
  • the forming the encapsulation layer may include: forming the viscoelastic material in a film or a sheet; and laminating the film or the sheet onto the substrate.
  • the forming the encapsulation layer may include laminating the viscoelastic material to the substrate while applying heat and pressure in a vacuum state.
  • the forming the encapsulation layer may include placing a compensation layer on the encapsulation layer to flatten the encapsulation layer.
  • the method may further include removing the compensation layer after the encapsulation layer is cured.
  • the substrate may include: a glass substrate; and a thin film transistor (TFT) layer formed on the glass substrate and configured to drive the plurality of inorganic light emitting diodes.
  • TFT thin film transistor
  • the assembling the plurality of unit modules may include arranging the plurality of unit modules in a matrix.
  • a display apparatus includes a plurality of unit modules; and a cover configured to support the plurality of unit modules.
  • Each of the plurality of unit modules may include: a substrate; a plurality of inorganic light emitting diodes provided on a mounting surface of the substrate; and an encapsulation layer formed on the mounting surface of the substrate to cover the plurality of inorganic light emitting diodes and the mounting surface of the substrate.
  • the encapsulation layer may include a viscoelastic material having varying viscoelasticity based on temperature being applied to the viscoelastic material.
  • the viscoelasticity of the viscoelastic material may be lowered and the viscoelastic material may gain fluidity.
  • the viscoelastic material may include at least one of ethylene based polymers, acetate based polymers, ethylene vinyl acetate based polymers, olefin based polymers or acrylic based polymers.
  • the substrate may include: a glass substrate; and a thin film transistor (TFT) layer formed on the glass substrate and configured to drive the plurality of inorganic light emitting diodes.
  • TFT thin film transistor
  • the plurality of unit modules may be arranged in a matrix.
  • a seam between the plurality of unit modules adjacent to each other may be visually hidden by applying heat to the encapsulation layer of the plurality of unit modules.
  • the display apparatus may further include a compensation layer formed on the encapsulation layer to improve flatness of the encapsulation layer.
  • the display apparatus may further include a frame arranged between the plurality of unit modules and the cover and coupled to the plurality of unit modules.
  • a display apparatus includes a plurality of unit modules; and a cover configured to support the plurality of unit modules.
  • Each of the plurality of unit modules may include: a substrate; at least one inorganic light emitting diode package mounted on a mounting surface of the substrate, the at least one inorganic light emitting diode package including: an inorganic light emitting diode; and a molding resin configured to individually surround the inorganic light emitting diode; and an encapsulation layer formed on the mounting surface of the substrate to cover the at least one inorganic light emitting diode package and the mounting surface of the substrate.
  • the encapsulation layer may include a viscoelastic material having varying viscoelasticity based on temperature being applied to the viscoelastic material.
  • a display apparatus includes a first unit module including: a first substrate; a plurality of first inorganic light emitting diodes provided on a first mounting surface of the first substrate; and a first encapsulation layer formed on the first mounting surface of the first substrate to cover the plurality of first inorganic light emitting diodes and the first mounting surface of the first substrate; a second unit module, the first unit module and the second unit module being adjacent to each other and having a gap therebetween, the second unit module including: a second substrate; a plurality of second inorganic light emitting diodes provided on a second mounting surface of the second substrate; and a second encapsulation layer formed on the second mounting surface of the second substrate to cover the plurality of second inorganic light emitting diodes and the second mounting surface of the second substrate; and a cover configured to support the first and second unit modules.
  • the seam between the first unit module and the second unit module is visually hidden by varying viscoelasticity of each of the first and second encapsul
  • the viscoelasticity of each of the first and second encapsulation layers may be lowered and the viscoelastic material of each of the first and second encapsulation layers may gain fluidity.
  • the viscoelastic material of each of the first and second encapsulation layers may include at least one of ethylene based polymers, acetate based polymers, ethylene vinyl acetate based polymers, olefin based polymers or acrylic based polymers.
  • the display apparatus may further include a compensation layer formed on the first and second encapsulation layers to improve flatness of the first and second encapsulation layers.
  • FIG. 1 is a perspective view of a display apparatus according to an embodiment
  • FIG. 2 is an exploded view of components of a display apparatus according to an embodiment
  • FIG. 3 is a front view illustrating a state in which a plurality of unit modules is arranged in a matrix (an encapsulation layer is omitted) according to an embodiment
  • FIG. 4 is a front view of a single unit module (an encapsulation layer is omitted) according to an embodiment
  • FIG. 5 is a cross-sectional view of a single unit module according to an embodiment of the disclosure, which is taken along the line I-I in FIG. 4 (the encapsulation layer is omitted).
  • FIG. 6 is a cross-sectional view of a unit module on which the encapsulation layer is formed according to an embodiment
  • FIG. 7 is a view of a mounting structure of an inorganic light emitting diode according to an embodiment
  • FIG. 8 is a view of a unit module, on which a compensation layer is formed to improve a flatness of the encapsulation layer upon forming the encapsulation layer according to an embodiment
  • FIG. 9 is a view of a plurality of unit modules adjacent to each other according to an embodiment
  • FIG. 10 is a view of a display apparatus, in which a seam between the plurality of unit modules is visually removed by applying heat to the encapsulation layer according to an embodiment
  • FIG. 11 is a view illustrating an operation of removing a partial region of the encapsulation layer, which is positioned on an upper surface of a defective inorganic light emitting diode according to an embodiment
  • FIG. 12 is a view illustrating a state in which the partial region of the encapsulation layer, which is positioned on an upper surface of a defective inorganic light emitting diode, is removed according to an embodiment
  • FIG. 13 is a view illustrating a state in which the defective inorganic light emitting diode is replaced with a repair inorganic light emitting diode according to an embodiment
  • FIG. 14 is a flow chart illustrating a manufacturing method of a display apparatus according to an embodiment
  • FIG. 15 is a flow chart illustrating a repair method of a display apparatus according to an embodiment.
  • FIG. 16 is a cross-sectional view of a unit module of a display apparatus according to another embodiment.
  • FIG. 1 is a perspective view of a display apparatus 1 according to an embodiment of the disclosure.
  • FIG. 2 is an exploded view of components of a display apparatus 1 according to an embodiment of the disclosure.
  • a display apparatus 1 is an output device for displaying information and data in the form of characters, features, graphics, and images.
  • the display apparatus may be implemented as a television (TV), a personal computer (PC), a mobile, and a digital signage.
  • the display apparatus may be installed on the ground by a stand (not shown) or may be installed on a wall.
  • the display apparatus 1 may include a plurality of unit modules 30A ⁇ 30L displaying an image, a frame 21 supporting the plurality of unit modules 30A ⁇ 30L, and a rear cover 10 covering a rear surface of the frame 21.
  • the rear cover 10 may form a rear surface of the display apparatus 1.
  • the plurality of unit modules 30A ⁇ 30L may be arranged in an M x N matrix in the up, down, left, and right directions so as to be adjacent to one another.
  • twelve (12) unit modules 30A ⁇ 30L are installed on the frame 21 in the form of a 4 x 3 matrix, but the number and the types of arrangement of a plurality of unit modules are not limited thereto. Therefore, the number and the types of arrangement of the plurality of unit modules may be modified based on the design intent.
  • the plurality of unit modules 30A ⁇ 30L may be installed on the frame 21 through various known methods such as a magnetic force using a magnet or a mechanical fitting structure.
  • the display apparatus 1 may further include a control board 25 for driving the plurality of unit modules 30A ⁇ 30L and a power supply device (not shown) for supplying power to the plurality of unit modules 30A ⁇ 30L .
  • the plurality of unit modules 30A ⁇ 30L may be planar or curved. Furthermore, the curvature thereof may vary according to the design intent.
  • a cover glass 2 configured to protect and support the plurality of unit modules 30A ⁇ 30L may be attached to the front surface of each of the plurality of unit modules 30A ⁇ 30L.
  • an optical film (not shown) configured to improve optical performance may be provided.
  • a circular polarizing film, a linear polarizing film, a retardation film, AG / LR / AR / HC film, and a Neutral Density (ND) film which are to improve the image quality, may be used alone as the optical film or alternatively, two or more the above-described films of them may be laminated and used as the optical film.
  • FIG. 3 is a front view illustrating a state in which a plurality of unit modules 30A ⁇ 30L are arranged in a matrix according to an embodiment of the disclosure.
  • FIG. 4 is a front view of a unit module 30A of the plurality of unit modules 30A ⁇ 30L according to an embodiment of the disclosure.
  • FIG. 5 is a cross-sectional view of a single unit module according to an embodiment of the disclosure, which is taken along the line I-I in FIG. 4. In FIGS. 3-5, an encapsulation layer is omitted.
  • FIG. 7 is a view illustrating a mounting structure of an inorganic light emitting diode according to an embodiment of the disclosure.
  • each of the plurality of unit modules 30A ⁇ 30L may include a substrate 40 and a plurality of inorganic light emitting diodes 50 mounted on a mounting surface 41 of the substrate 40.
  • the substrate 40 may be formed of a material such as polyimide (PI), FR4, and glass. On the mounting surface 41 of the substrate 40, a substrate electrode 44 and 45, to which the plurality of inorganic light emitting diodes 50 are electrically connected, may be formed.
  • PI polyimide
  • FR4 FR4
  • glass glass
  • a substrate electrode 44 and 45 to which the plurality of inorganic light emitting diodes 50 are electrically connected, may be formed.
  • the substrate 40 may include a base substrate 42 and a thin film transistor (TFT) layer 43 formed on the base substrate 42 to drive an inorganic light emitting diode 50 of the plurality of inorganic light emitting diodes 50.
  • the base substrate 42 may include a glass substrate. That is, the substrate 40 may include a chip on glass (COG) type substrate.
  • COG chip on glass
  • the inorganic light emitting diode 50 may be formed of an inorganic material. Therefore, the inorganic light emitting diode 50 may have increased durability and a longer lifetime in comparison with the organic light emitting diode (OLED), which is based on organic materials, and the inorganic light emitting diode 50 may have the power efficiency being several times greater than that of the OLED.
  • OLED organic light emitting diode
  • the plurality of inorganic light emitting diodes 50 may include a red inorganic light emitting diode 51, a green inorganic light emitting diode 52, and a blue inorganic light emitting diode 53.
  • the plurality of inorganic light emitting diodes 50 may be formed by mounting a series of the red inorganic light emitting diode 51, the green inorganic light emitting diode 52 and the blue inorganic light emitting diode 53 as a unit, on the substrate 40 as illustrated in, for example, FIG. 5.
  • the red inorganic light emitting diode 51, the green inorganic light emitting diode 52 and the blue inorganic light emitting diode 53 may together form a single pixel.
  • the red inorganic light emitting diode 51, the green inorganic light emitting diode 52 and the blue inorganic light emitting diode 53 may be arranged at a predetermined interval in a row as illustrated in the drawings, but it may be arranged in different arrangements.
  • the plurality of inorganic light emitting diodes 50 may be picked up from a source wafer and transferred onto the substrate 40.
  • the plurality of inorganic light emitting diodes 50 may be picked up and transferred through an electrostatic method using an electrostatic head, a stamp bonding method using an elastic polymer such as polydimethylsiloxane (PDMS) or silicon (Si) as a head, or a laser ablation transfer.
  • PDMS polydimethylsiloxane
  • Si silicon
  • a width, a length, and a height of each of the plurality of inorganic light emitting diodes 50 may have a size of several micrometers to several hundreds of micrometers, and a shorter side of a width and a length (in a plan view) of a micro inorganic light emitting diode may have 100 ⁇ m or less in its size.
  • the plurality of inorganic light emitting diodes 50 may include a first diode electrode 57a, and a second diode electrode 57b, and may be formed in the form of a flip chip in which the first diode electrode 57a and the second diode electrode 57b are arranged on a side opposite to a light emitting direction of the plurality of inorganic light emitting diodes 50. That is, the first diode electrode 57a and the second diode electrode 57b may be formed on a bottom surface 56 of the inorganic light emitting diode 50.
  • the first and second diode electrodes 57a and 57b of each of the plurality of inorganic light emitting diodes 50 may be connected to the substrate electrodes 44 and 45 of the substrate 40 through soldering 46.
  • the first diode electrode 57a and the second diode electrode 57b of the inorganic light emitting diode 50 may be connected to the substrate electrodes 44 and 45 of the substrate 40 through an anisotropic conductive film including fine conductive particles.
  • the inorganic light emitting diode 50 may be a lateral type or a vertical type, and may be connected to the substrate electrodes 44 and 45 through a wire.
  • FIG. 6 is a cross-sectional view of a unit module 30A (of a plurality of unit modules 30A ⁇ 30L) on which an encapsulation layer is formed according to an embodiment of the disclosure.
  • an encapsulation layer 60 may be formed on the substrate 40 to physically protect the plurality of inorganic light emitting diodes 50 without causing optical distortion.
  • the encapsulation layer of the related art is formed of a transparent molding material such as epoxy or silicon, or a tackifier or an adhesive such as Optically Clear Adhesive (OCA) or Optically Clear Resin (OCR).
  • a transparent molding material such as epoxy or silicon
  • a tackifier or an adhesive such as Optically Clear Adhesive (OCA) or Optically Clear Resin (OCR).
  • OCA Optically Clear Adhesive
  • OCR Optically Clear Resin
  • the encapsulation layer 60 includes viscoelastic materials, which have the viscoelasticity and the degree of curing which varies according to changes in the temperature or the pressure, so as to physically protect the inorganic light emitting diodes 50 sufficiently as well as improving the image quality.
  • the viscoelastic material in the encapsulation layer 60 may include at least one of ethylene based polymers, acetate based polymers, ethylene vinyl acetate based polymers, olefin based polymers or acrylic based polymers.
  • the viscoelastic material the encapsulation layer 60 When the viscoelastic material the encapsulation layer 60 is heated and reaches a predetermined temperature, the viscoelasticity thereof may be lowered and the viscoelastic material may have the fluidity.
  • the application of heat to the viscoelastic material may be performed by using either ultraviolet rays or infrared rays.
  • the temperature at which the viscoelastic material has the fluidity may be from about 80 °C to about 120 °C, but is not limited thereto. When the temperature of the viscoelastic material exceeds 120 °C, the viscoelasticity may increase again and the viscoelastic material may be cured. Other than applying the heat to the viscoelastic material, the viscoelastic material may be cured by adding hardeners thereto.
  • the viscoelastic material may have a refractive index between 0.5 and 1.8, and the refractive index may be controlled by using polymer particles such as fillers and beads.
  • the viscoelastic material may include a material such as pigment or dye showing color.
  • the viscoelastic material may include a material of black color. By adjusting black, it is possible to control the transmittance as well as brightness and reflectance according to transmittance.
  • the viscoelastic material may include a black organic material, a black inorganic material and a black metal such as a carbon black, a polyene-based pigment, an azo-based pigment, an azomethine-based pigment, a diimmonium-based pigment, a phthalocyanine- based pigment, a quinone-based pigment, an indigo-based pigment, a thioindigo-based pigment, a dioxadin-based pigment, a quinacridone-based pigment, an isoindolinone-based pigment, a metal oxide, a metal complex, and an aromatic hydrocarbon.
  • the encapsulation layer 60 may be formed by laminating a viscoelastic material onto the substrate 40 through a lamination process.
  • the encapsulation layer 60 may be formed by forming the viscoelastic material in the form of a film or a sheet having a uniform thickness and laminating the viscoelastic material onto the substrate 40. In a vacuum state, heat and pressure may be applied when the viscoelastic material adheres onto the substrate 40. The lamination process may allow a thickness of the encapsulation layer to be uniform and may prevent the generation of the bubble in the encapsulation layer 60, thereby improving the image quality of the display apparatus.
  • the encapsulation layer 60 may be formed to surround an outer surface including an upper surface 54 and side surfaces 55 of each of the plurality of inorganic light emitting diodes 50.
  • the encapsulation layer 60 may be formed to cover the entire area of the mounting surface 41 of the substrate 40 so as to cover all the inorganic light emitting diodes 50 mounted on the substrate 40. That is, the encapsulation layer 60 may be formed in the entire area of the mounting surface 41 of the substrate 40 so as to have a size corresponding to the size of the substrate 40. Also, as will be described later, it is appropriate that the encapsulation layer 60 has a size corresponding to the size of the substrate 40 so that the seams between the plurality of adjacent unit modules are visually and effectively removed.
  • FIG. 8 is a view of a unit module 30A (of a plurality of unit modules 30A-30L), on which a compensation layer 70 is formed to improve a flatness of the encapsulation layer 60 upon forming the encapsulation layer 60 according to an embodiment of the disclosure.
  • the formation of the encapsulation layer 60 may include placing a compensation layer 70 over the encapsulation layer 60 including the viscoelastic material so that the encapsulation layer 60 is more flatly formed. That is, after the compensation layer 70 is placed on the encapsulation layer 60 including the viscoelastic material, the encapsulation layer 60 and the compensation layer 70 may be laminated to each other, which is to make the encapsulation layer 60 flat.
  • the compensation layer 70 may include a film or a glass. Accordingly, the encapsulation layer 60 may be formed to have an overall uniform thickness.
  • a parting agent may be arranged between the compensation layer 70 and the encapsulation layer 60 and thus it is possible to remove the compensation layer 70 after the encapsulation layer 60 is cured.
  • the film may include optical film such as cellulose triacetate (TAC), polyethylene terephthalate (PET), and cyclic olefin polymer (COP), which are used in a display apparatus of the related art. These films may improve polarization, phase, transmission, reflection and haze.
  • the thickness of the film may be in the range of 3 ⁇ m to 500 ⁇ m.
  • the thickness of the glass may be in the range of 1 ⁇ m to 7000 ⁇ m.
  • the thicknesses of the film and the glass may be selected to adjust the boundary between the plurality of unit modules 30A ⁇ 30L.
  • FIG. 9 is a view of a plurality of unit modules 30A ⁇ 30L adjacent to each other according to an embodiment of the disclosure.
  • FIG. 10 is a view of a display apparatus 1, in which a seam between the plurality of unit modules 30A ⁇ 30L is visually hidden by applying heat to the encapsulation layer, according to an embodiment of the disclosure. Seam is what is visually recognized by physical gap between the plurality of unit modules.
  • fine intervals may be formed amongst the plurality of unit modules 30A ⁇ 30L which are adjacent to each other.
  • a gap may be formed between the adjacent unit modules 30A and 30B. Therefore, seam can be visually recognized by the gap.
  • heat may be applied to the encapsulation layer 60 of the adjacent unit modules 30A and 30B and thus the seam G between the adjacent unit modules 30A and 30B adjacent to each other may be hidden .
  • the viscoelastic material contained in the encapsulation layer 60 is lowered in viscoelasticity and gains fluidity and then sticks together while flowing, thereby visually removing the seam G. That is, the seam G may be hidden. After the seam G is visually removed, the viscoelastic material may be further heated or a hardener may be added, thereby curing the encapsulation layer 60 again.
  • FIG. 14 is a flow chart illustrating a method of manufacturing a display apparatus 1 according to an embodiment of the disclosure.
  • a plurality of inorganic light emitting diodes 50 are mounted on a substrate 40 (S110).
  • an encapsulating layer 60 including a viscoelastic material is formed on the substrate 40 so as to cover the plurality of inorganic light emitting diodes 50 (S120).
  • the plurality of unit modules each including the substrate 40, the plurality of inorganic light emitting diodes 50, and the encapsulation layer 60, are prepared and assembled to be adjacent to each other (S130).
  • FIG. 11 is a view illustrating an operation of removing a partial region 61 of the encapsulation layer 60, which is positioned on an upper surface of a defective inorganic light emitting diode 58 according to an embodiment of the disclosure.
  • FIG. 12 is a view illustrating a state in which the partial region 61 of the encapsulation layer 60, which is positioned on an upper surface of a defective inorganic light emitting diode 58, is removed according to an embodiment of the disclosure.
  • FIG. 13 is a view illustrating a state in which a defective inorganic light emitting diode 58 is replaced with a replacement inorganic light emitting diode 59 according to an embodiment of the disclosure.
  • FIG. 15 is a flow chart illustrating a method of repairing a display apparatus 1 according to an embodiment of the disclosure.
  • a display apparatus 1 may easily replace a defective inorganic light emitting diode 58 even after the encapsulation layer 60 is formed on a plurality of inorganic light emitting diodes 50.
  • the removal of the partial region 61 of the encapsulation layer 60 may include radiating a laser beam 91 on the partial region 61 of the encapsulation layer 60.
  • a laser oscillator 90 may be moved to a region above the partial region 61 of the encapsulation layer 60 to radiate the laser beam 91.
  • the defective inorganic light emitting diode 58 is removed from the substrate 40 and a new replacement inorganic light emitting element 59 is mounted on that position (S230).
  • a new replacement inorganic light emitting diode 59 may be mounted in an adjacent area without removing the defective inorganic light emitting diode 58.
  • heat is applied to the encapsulation layer 60 to remove defects in the encapsulation layer 60 (S240).
  • the viscoelasticity of the viscoelastic material of the encapsulation layer 60 is lowered and gains fluidity. Then the viscoelastic material flows, thereby removing the defects of the encapsulation layer 60. After the defect is removed, the viscoelastic material may be further heated or a hardener may be added, thereby curing the encapsulation layer 60, again.
  • FIG. 16 is a cross-sectional view of a unit module 30A of a display apparatus 1 according to another embodiment of the disclosure.
  • a unit module 30A of a display apparatus 1 according to another embodiment of the disclosure will be described with reference to FIG. 16.
  • the same reference numerals are assigned to the same components as those of the above-described embodiment, and description thereof will be omitted.
  • each of the unit modules 30A-30L may include a substrate 40, and a plurality of inorganic light emitting diode packages 250 mounted on a mounting surface 41 of a substrate 40.
  • the plurality of inorganic light emitting diodes 50 are mounted on the substrate 40 without individual molding.
  • at least one inorganic light emitting diode 254 may be individually molded to form an inorganic light emitting diode packages 250 and then the inorganic light emitting diode packages 250 may be mounted on the substrate 40.
  • the inorganic light emitting diode package 250 may include the inorganic light emitting diode 254 and a molding resin 255 configured to individually surround the inorganic light emitting diode 254.
  • the molding resin 255 may be formed of a transparent material.
  • the inorganic light emitting diode packages 250 may include a red inorganic light emitting diode package 251, a green inorganic light emitting diode package 252, and a blue inorganic light emitting diode package 253.
  • an encapsulation layer 60 may be formed to physically protect the inorganic light emitting diode packages 250 without causing the optical distortion.
  • the encapsulation layer 60 may include viscoelastic materials, which have the viscoelasticity and the degree of curing of the encapsulation layer 60 may vary according to changes in the temperature or the pressure being applied.
  • the viscoelastic material is formed in the form of a film or a sheet and is laminated on the substrate.
  • the viscoelastic material is formed in the form of a film or a sheet and is laminated on the substrate.

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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

La présente invention concerne un appareil d'affichage comprenant une pluralité de modules unitaires ; et un couvercle configuré pour soutenir la pluralité de modules unitaires. Chaque module de la pluralité de modules unitaires comprend : un substrat ; une pluralité de diodes électroluminescentes inorganiques disposées sur une surface de montage du substrat ; et une couche d'encapsulation formée sur la surface de montage du substrat pour recouvrir la pluralité de diodes électroluminescentes inorganiques et la surface de montage du substrat. La couche d'encapsulation comprend un matériau viscoélastique ayant une viscoélasticité variable sur la base de la température appliquée au matériau viscoélastique.
EP19853207.9A 2018-08-20 2019-08-16 Appareil d'affichage et son procédé de fabrication Pending EP3811414A4 (fr)

Applications Claiming Priority (3)

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KR20180097032 2018-08-20
KR1020190089452A KR102766461B1 (ko) 2018-08-20 2019-07-24 디스플레이 장치 및 그 제조 방법
PCT/KR2019/010405 WO2020040483A1 (fr) 2018-08-20 2019-08-16 Appareil d'affichage et son procédé de fabrication

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EP3811414A4 EP3811414A4 (fr) 2021-08-18

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KR20220017070A (ko) * 2020-08-04 2022-02-11 삼성전자주식회사 디스플레이 장치
KR20230000611A (ko) * 2021-06-25 2023-01-03 삼성전자주식회사 디스플레이 모듈을 포함하는 디스플레이 장치 및 그 제조 방법
CN115939287A (zh) * 2021-08-24 2023-04-07 成都辰显光电有限公司 发光器件的修复装置和修复方法
CN114023780B (zh) * 2021-09-24 2025-07-18 重庆康佳光电科技有限公司 显示装置的修复方法
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CN116053387A (zh) * 2023-03-07 2023-05-02 惠科股份有限公司 显示面板制作方法与显示面板
KR102798156B1 (ko) * 2023-06-01 2025-04-17 주식회사 레다즈 디스플레이 장치 및 디스플레이 장치의 리워크 방법
TWI867739B (zh) * 2023-09-08 2024-12-21 友達光電股份有限公司 顯示裝置

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KR20200021399A (ko) 2020-02-28
CN112567523A (zh) 2021-03-26
EP3811414A4 (fr) 2021-08-18
KR102766461B1 (ko) 2025-02-13
CN112567523B (zh) 2024-12-13

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