EP3856948A2 - Dispositif de revêtement, chambre de traitement, et procédé servant à revêtir un substrat et substrat revêtu d'au moins une couche de matériau - Google Patents

Dispositif de revêtement, chambre de traitement, et procédé servant à revêtir un substrat et substrat revêtu d'au moins une couche de matériau

Info

Publication number
EP3856948A2
EP3856948A2 EP19795203.9A EP19795203A EP3856948A2 EP 3856948 A2 EP3856948 A2 EP 3856948A2 EP 19795203 A EP19795203 A EP 19795203A EP 3856948 A2 EP3856948 A2 EP 3856948A2
Authority
EP
European Patent Office
Prior art keywords
source
substrate
coating device
laser light
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP19795203.9A
Other languages
German (de)
English (en)
Inventor
Wolfgang Braun
Jochen Mannhart
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Original Assignee
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Max Planck Gesellschaft zur Foerderung der Wissenschaften eV filed Critical Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Publication of EP3856948A2 publication Critical patent/EP3856948A2/fr
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/088—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/063—Heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/32—Titanates; Germanates; Molybdates; Tungstates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks

Definitions

  • the present invention relates to a coating device for coating a substrate made of a substrate material with at least one material layer made of a layer material, comprising a process chamber with a process volume for receiving a substrate holder for the stationary arrangement of the substrate in the process volume, the process chamber having at least one chamber wall essentially completely enclosing the process volume, a gas system fluidly communicating with the process volume for generating a coating atmosphere in the process volume, a source holder arranged in the process volume with at least one source material, the source material preferably accommodated in a source crucible, furthermore the source holder and the Substrate holders are arranged relative to one another in such a way that thermally evaporated and / or sublimed source material can be deposited on the substrate for at least partial formation of the layer material than the material layer.
  • the present invention also relates to a process chamber for a coating device for coating a substrate made of a substrate material with at least one material layer made of a layer material. Furthermore, the present invention relates to a method for coating a substrate made of a substrate material with at least one material layer made of a layer material in a coating device. Another aspect of the invention relates to a substrate coated with at least one material layer, comprising the substrate made of substrate material, which is coated with at least one material layer made of a layer material. Coating a substrate made of a substrate material with a material layer made of a layer material is basically known in the prior art. For example, such coating processes can be used in the manufacture of integrated circuits. Other electrical or electronic components, such as solar cells, can also be carried out in coating devices using such coating processes. In addition, other products, for example mirror and / or beam splitters for use in laser technology, can be produced using a coating device or a coating process.
  • a major advantage of the MBE is that high stoichiometric control of the material layer produced and in particular its layer material can be provided.
  • material layers can also be produced in the MBE in which the layer material has a modulated, that is to say, in particular variable, doping.
  • a high level of purity of the material layers produced is also a property of the MBE.
  • one or more source materials are mostly vaporized and / or sublimed thermally by an electric heater and deposited on a substrate. By increasing or reducing the surface area of the source materials used for evaporation and / or sublimation, for example by appropriately selecting a source crucible, a high scalability from small to very large substrate areas can also be provided in the MBE.
  • an electrical heater for the thermal evaporation and / or sublimation of the source material mentioned above also leads to disadvantages for the MBE.
  • a pressure limitation of a maximum of 10 5 mbar, usually even less than 10 6 mbar must be observed.
  • the corrosive gases at higher pressures corrode and fail the electrical elements present in the process volume, in particular elements for heating the source material and / or the substrate.
  • Evaporated and / or sublimated source material is also inevitably deposited on these electrical elements, as a result of which these elements can also be impaired, up to a complete destruction of the corresponding electrical component, for example by a short circuit.
  • the source material is ablated by extremely short and high-energy laser pulses, ie it evaporates so quickly that a plasma is formed from the source material.
  • pulse durations of 10 ns - 50 ns at a repetition frequency of 1 - 25 per second and energy densities of 10 MW / cm 2 can be provided by the lasers used.
  • the clouds of source material resulting from the explosive evaporation during ablation have on average a high kinetic energy of the particles, the maximum speeds of the explosively evaporated source material particles mostly occurring perpendicular to the source surface. Due to these high speeds, higher pressures in the coating atmosphere in the process volume are possible, in particular up to a range of 1 mbar.
  • the stoichiometry of the growing material layer on the substrate cannot be checked as far as possible, or only to a very limited extent.
  • the stoichiometry of the material layer or the layer material is at least essentially determined by the stoichiometry of the material source used, plus only possible reactions with a process gas of the coating atmosphere.
  • the modulation of a doping as part of the layer material described above in relation to the MBE is not possible.
  • Another disadvantage is that a high laser energy density is necessary for the ablation of the source material by the laser pulses described above.
  • the MBE and the PLD in the state of the art provide two methods, each of which is advantageous for special coating processes.
  • certain desired material layers may require a layer material or a layer material composition, the production of which is neither sufficiently accessible by either of the two methods.
  • many oxides require a corrosive coating atmosphere as the layer material, preferably having molecular oxygen and / or ozone.
  • the highest possible pressure is Coating atmosphere, in particular a pressure of, for example, 10 3 mbar, advantageous.
  • this pressure range is not accessible to the MBE according to the prior art or is only accessible to a very limited extent.
  • the object is achieved by a coating device for coating a substrate with the features of independent claim 1. Furthermore, the object is achieved by a process chamber for a coating device with the features of independent claim 16. Furthermore, the object is achieved by a method for coating a substrate with the features of the independent claim 17. Furthermore, the object is achieved by a substrate coated with at least one material layer with the features of the secondary claim 23. Further features and details of the invention result from the subclaims , the description and the drawings.
  • a coating device for coating a substrate made of a substrate material with at least one material layer made of a layer material, comprising a process chamber with a process volume for accommodating a substrate holder for the stationary arrangement of the substrate in the Process volume, the process chamber having a chamber wall for at least substantially completely enclosing the process volume, a gas system fluidly communicating with the process volume for generating a coating atmosphere in the process volume, a source holder arranged in the process volume with at least one source material which Source material is preferably accommodated in a source crucible, the source holder and the substrate holder also being arranged relative to one another in such a way that thermally evaporated and / or sublimated source material can be deposited on the substrate m at least partially forming the layer material of the material layer, further comprising a source heating laser.
  • a coating device is characterized in that the source heating laser is designed to provide laser light continuously or at least substantially continuously, and the process chamber is a coupling device with at least one coupling section in the chamber wall for guiding laser light from a source heating laser into the process volume
  • the laser light is present in the process volume at least in sections as a light beam and the source material can be heated by the laser light and can be thermally evaporated and / or sublimated below a plasma generation threshold of the source material.
  • the substrate holder can be designed to hold several substrates and / or that the coating device can be designed to hold several substrate holders with one or more substrates.
  • the coating device can be used for the simultaneous coating of several substrates.
  • a coating device can be used to vapor-coat or coat a substrate made of a substrate material with at least one material layer made of a layered material.
  • a coating device according to the invention has a process chamber in which the substrate can be coated.
  • An interior of the process chamber is essentially formed by a process volume, which in turn is at least essentially completely enclosed by a chamber wall.
  • At least essentially enclosed within the meaning of the invention means in particular that the chamber wall preferably only has openings and / or bushings, which in turn can be completely closed.
  • the chamber wall can be multi-layer, and e.g. contain a gas- or liquid-cooled jacket in order to minimize residual impurities in the process volume. Particularly low pressures of the coating atmosphere can also be achieved in this way.
  • Technical coolants such as water, alcohols, liquid nitrogen or liquid helium can be used as coolants.
  • a completed process volume in particular for providing a preferably controllable and / or controllable coating atmosphere, can be provided in this way.
  • the coating atmosphere itself is generated by a gas system of the coating device according to the invention that is fluidly connected to the process volume.
  • a coating atmosphere in the sense of the invention is characterized in particular by the parameters of the process gas used for the coating atmosphere and its pressure. By means of the pressure of the coating atmosphere, for example, an average free path length of the source materials evaporated and / or sublimated in the course of coating the substrate can be set.
  • the process gas used can also be selected according to the material layer to be produced or its layer material.
  • a process gas which contains molecular oxygen and / or ozone can be used to produce oxides, as a result of which the oxidation processes necessary for the formation of the oxides can be made possible.
  • the process gas can supply the element nitrogen required for the formation of nitrides.
  • the substrate to be coated is arranged in the process volume itself, in particular received and held by a substrate holder.
  • the substrate holder is arranged in a stationary manner overall in the process volume.
  • a stationary arrangement includes, in particular, that the substrate holder is also rotatable as a whole and / or, if present, also individual ones
  • Substrates can be provided rotatably on the substrate holder, whereby a further improvement in the homogeneity of the material layer produced on the respective substrate can be provided.
  • a source holder which in turn has at least one source material, is arranged relative to the substrate holder.
  • the source material in turn can preferably be received in a source crucible. This enables a particularly large selection of source materials to be used.
  • the source holder and the substrate holder can preferably be arranged in parallel and / or directly opposite one another, as a result of which the source surface of the source material and the The substrate surface can also be arranged directly opposite one another and / or preferably parallel to one another.
  • a source element in which the source material itself can be used for arranging and / or fastening the source material in the source holder.
  • the source material can be rod-shaped and / or rod-shaped, with a first end of this rod being heated and thereby thermally evaporated and / or sublimated, and the rod being arranged on its outer surface and / or its opposite second end in the source holder and / or is fixed.
  • This can be achieved, in particular, with source materials with poor heat conduction, since the first end of the rod can be sublimed and even melted or liquefied, while the rest of the rod remains cold and solid. In this way, particularly long idle times, ie times without the need to change sources, can be provided.
  • a particularly good and in particular uniform coating of the substrate with the thermally evaporated and / or sublimed source material can thereby be provided.
  • Possible distances between the source holder and the substrate holder are, for example, 20 to 200 mm, preferably 60 mm.
  • Shutter diaphragms can also be arranged between the source holder or the individual source materials and / or source crucibles and the substrate, in order to selectively and in particular in a controlled and / or regulated manner to shade vaporized and / or sublimed source material of a source or a source crucible with respect to the substrate. In particular, this enables the desired high stoichiometric control during the production of the layer material of the material layer.
  • the source holder and the substrate holder are at least essentially identical.
  • a size extension of the source holder and the substrate holder can in particular comprise at least substantially identical.
  • an interchangeability of the substrate holder as is fundamentally known for example with the MBE, can also be applied for the source holder.
  • an exchange and / or refill source with its own source holder can be provided in a separate reserve volume, which is only separated from the process volume by a slide valve.
  • An atmosphere in the reserve volume can be set or be set independently of the process volume, the reserve volume preferably also being filled with the coating atmosphere.
  • the sources or the source holder can be exchanged in this way without the need to completely break and recreate the coating atmosphere.
  • the coating device according to the invention has a source heating laser.
  • the source heating laser as part of the coating device itself can be set up directly near the process chamber or even arranged directly on it, the source heating laser preferably also being set up remotely from the process chamber and only the necessary laser light from the source heating laser being directed to the process chamber.
  • the process chamber of the coating device according to the invention has a coupling device with at least one coupling section in order to enable the laser light of the source heating laser to be guided into the process volume.
  • the coupling section is arranged in the chamber wall of the process chamber.
  • the coupling section can have, for example, a coupling window, preferably made of quartz glass.
  • a coupling window preferably made of quartz glass.
  • Implementation, for example of glass fibers, as a coupling section is also conceivable.
  • the source heating laser is designed for the continuous or at least essentially continuous provision of laser light.
  • a continuous or at least essentially continuous provision in the sense of the invention can comprise, for example, an uninterrupted emission of laser light over time intervals of a few microseconds or longer, preferably milliseconds or longer.
  • the source heating laser is therefore particularly preferably not pulsed, that is to say operated with high laser energies and / or lengths of the laser pulses in the nanosecond range.
  • a particularly constant and controllable or controllable energy input of the laser light into the source material can be provided in this way.
  • a constant and / or controllable and controllable temperature of the source material and thus a consequent evaporation rate and / or sublimation rate can be made possible in this way.
  • a temperature of the source material is considered to be constant if it fluctuates by less than 30%, preferably by less than 10%, in a period that comprises several transmission phases and pause phases.
  • an energy of the laser light from the source heating laser is set such that a plasma generation threshold of the source material is not reached by the laser light.
  • a plasma generation threshold of the source material is not reached by the laser light.
  • no plasma is generated when the laser light strikes the source material, since the energy provided by the laser light and acting on the source material is not sufficient for this.
  • a purely thermal evaporation and / or sublimation of the source material, which takes place below the plasma generation threshold of the source material, can thereby be ensured.
  • the correspondingly trained laser light or a correspondingly trained source heating laser can also be used in a coating device according to the invention for different source materials with a material-specific plasma generation threshold.
  • the heating and in particular thermal evaporation and / or sublimation of the source material by the laser light no or at least essentially no electrical components are required in the process volume of the process chamber. Restrictions with regard to the type and pressure of the process gas used can thus be avoided in a coating device according to the invention.
  • the pressure of the coating atmosphere used is therefore essentially limited only by the free path length of the thermally vaporized and / or sublimed material particles of the source material or can be adjusted to suit a desired or required free path length in order to ensure that the substrate is reached by the source material. With a distance between the substrate and the source holder of 60 mm, this leads to a pressure of the coating atmosphere of about 10 3 mbar that can still be achieved.
  • the source material is provided arranged in a source holder.
  • Several, preferably different, source materials are also possible, each of these source materials having the above-described NEN shutter panels can be switched on and off for a corresponding coating of the substrate.
  • a high degree of control of a stoichiometry of the material layer or the layer material produced can be provided in this way.
  • a high source purity is transferred to the purity of the layer material of the material layer produced on the substrate.
  • a high level of source purity can be provided, for example, by source materials that are already highly pure, in particular by using source crucibles to hold these source materials.
  • the shutter diaphragms are preferably arranged in such a way that the irradiation of the laser light onto the corresponding source crucible and / or the corresponding source material is not, or at least essentially not blocked, by the shutter diaphragm, in particular in none of the positions of the shutter diaphragm.
  • a high stoichiometric control can be provided in a coating device according to the invention with at the same time free or at least little restricted selection of the parameters of the coating atmosphere.
  • oxides can be produced particularly well and in high purity while at the same time controlling the stoichiometry well, and in particular doping, in particular modulated doping, of these oxides can be made possible by a coating device according to the invention.
  • the source material can be directly heated by the laser light and can be thermally vaporized and / or sublimated by directly irradiating the laser light onto a source surface of the source material.
  • the laser light from the source heating laser is directed into the process volume of the coating device in such a way that it strikes a source surface of the source material.
  • a direct energy transfer from the laser light to the source material without, for example, the detour via an intermediate heating of further elements, in particular for example a source crucible, can be provided in this way.
  • the source surface of the source material thus becomes at least essentially one location in the entire process volume with the highest temperature, as a result of which a consistently high purity of the source material can be provided. This is due to the fact that process gas and / or evaporated or sublimated material preferentially deposits in the process volume at colder locations, as a result of which a hot source surface does not have to suffer any or only insignificant contamination.
  • the light beam with a surface normal to a crucible surface of the source crucible with source material and / or with a surface normal to a source surface of the source material has an angle of incidence between 0 ° and 90 °, in particular between 30 ° and 70 °, preferably 50 ° includes.
  • an angle of incidence of 0 ° that is to say a perpendicular impingement of the laser light on the crucible surface and / or the source surface, a particularly high energy density can be provided at the point of incidence or on the entire incidence surface.
  • a particularly large angle of incidence leads to a flat, at 90 ° even grazing, impingement of the laser light on the source surface, as a result of which the energy of the laser light is distributed over a larger area of the source material and thus the energy transfer per unit area decreases.
  • An angle of incidence between 30 ° and 70 °, preferably an angle of incidence of 50 °, are good compromises of the extreme values described at the beginning, in which a good transmission of the energy of the laser light onto the source material and at the same time a preferred relative arrangement of the source holder and the substrate holder are provided can be.
  • Research results on laser welding also suggest that angles of incidence between 30 ° and 70 ° also lead to improved absorption of the laser light by metallic surfaces.
  • a coating device can also be designed such that an intensity and / or a wavelength of the laser light is adapted to the corresponding source material, the laser light preferably having an intensity of 0.01 W to 50 kW and / or a wavelength of 10 8 m to 10 5 m.
  • An adapted formation of the intensity and / or the wavelength of the laser light to the source material can be carried out, for example, taking into account the vapor pressure and / or the absorption behavior of the source material. For example, a source material with a higher vapor pressure will require a lower laser light output or intensity than a source material with a lower vapor pressure.
  • Source materials which have a high absorption capacity can also be heated up by a lower intensity of laser light and thermally evaporated and / or sublimated than source materials in which, for example, a high reflectivity reduces an absorption capacity of the source material.
  • the absorption behavior of the source material can, in particular, also have a dependence on an incident wavelength, which in turn can be taken into account by a corresponding choice of a wavelength of the laser light of the source heating laser.
  • a suitable source heating laser can be selected to match the source material, in order to be able to provide particularly good heating and thermal evaporation and / or sublimation of the source material.
  • the process chamber on an inside of the chamber wall has at least one beam catcher for at least partially absorbing reflected laser light, in particular laser light reflected on the crucible surface of the source crucible and / or on the surface of the source material , wherein the beam catcher is arranged in a spatial plane which the light beam and the surface normal to the crucible surface of the source crucible and / or to the source surface of the source material, and is arranged on a section of the chamber wall opposite the beam angle of the coupling section.
  • the laser light When the laser light is irradiated onto the source crucible or the source material, it may happen that the laser light is reflected on the crucible surface and / or the source surface. This reflection mostly takes place at least essentially in accordance with the law of reflection.
  • This beam catcher can be used in particular to prevent reflected laser light directly hitting the chamber wall from heating up the chamber wall.
  • the beam trap can prevent the generation of a further heat source by heating the chamber wall.
  • the beam catcher can also be actively cooled for this purpose. Contamination in the coating atmosphere due to outgassing and / or evaporation from a point in the chamber wall that is heated or heated by reflected laser light can be reduced in this way or even completely prevented. The purity of the material layer produced on the substrate can be further increased in this way.
  • the source holder has two or more, in particular three, preferably six, source materials, each preferably received in a source crucible, the source material being heatable with a separate light beam and laser light is thermally evaporable and / or sublimable and the source materials are preferably different.
  • the source holder has two or more, in particular three, preferably six, source materials, each preferably received in a source crucible, the source material being heatable with a separate light beam and laser light is thermally evaporable and / or sublimable and the source materials are preferably different.
  • multiple, preferably different, source materials can be provided with a single source holder. More than six source materials, for example twelve source materials, are also conceivable here. On the one hand, this allows sequential execution and generation of material layers with different layer materials.
  • each individual source material or each individual source crucible can be heated by a separate laser light beam and can be thermally evaporated and / or sublimed.
  • the separate light beams can either come from different source heating lasers or also from a single source heating laser, the light beam of which is split up, for example, by beam splitters and fed to the individual source materials.
  • the individual separate light beams for the individual source crucibles or source materials have at least different intensities, preferably adjustable and controllable by means of corresponding setting elements.
  • Light beams with different wavelengths, for example to increase the absorption of the laser light by the individual source materials, can also be provided.
  • the coupling device has a common coupling section for guiding at least two of the separate light beams into the process volume.
  • the two separate light beams can be introduced into the process volume through a common vacuum flange.
  • a construction of the process chamber, in particular the chamber wall for enclosing the process volume, can be simplified in this way.
  • the two separate light beams are directed into the process volume via a common coupling window.
  • separate coupling windows for the separate light beams are provided on the coupling section.
  • a coating device can be further developed in such a way that the coupling device has at least two separate coupling sections for guiding at least one of the separate light beams into the process volume, in particular the room planes, each of which is the light beam that passes through one of the separate inputs - Coupling sections is guided into the process volume, and span the surface normal to the crucible surface of the corresponding source crucible and / or to the source surface of the corresponding source material, enclose an angle less than 180 °, preferably between 90 ° and 150 °, particularly preferably of 120 °.
  • in particular means that if more than two separate light beams are provided, a plurality of these light beams can also be guided through a common coupling section, and all light beams can be directed into the process volume through at least two coupling sections.
  • a source holder with six source crucibles or source materials that three of these source materials are arranged on the source holder at a 120 ° distance from one another as a triple.
  • Each source material of this source material triple is heated up with a separate light beam and thermally evaporated and / or sublimated, the light beams for a source material triple each preferably being guided into the process volume in a common coupling section.
  • a triple bundle of light rays is provided for each of the source material triples, which come from a common coupling section, the two coupling sections thus present being arranged spaced apart from one another in the chamber wall of the process chamber.
  • a coating device can also be designed in such a way that at least one of the light beams, preferably all light beams, have a focus area, the light beam in the focus area having a minimal extent perpendicular to a light direction of the light beam, the focus area also in the Process volume is arranged between the coupling section and the corresponding source material or the corresponding source crucible.
  • Such focusing of the light beam in a focus area basically enables the largest possible expansion of the light beam at the coupling section, in particular at a coupling window of the coupling section.
  • a low load on the coupling-in section when the laser light from the source heating laser is passed through can be provided in this way, the focus area at the same time being chosen such that good heating and thermal evaporation and / or sublimation of the source material, in particular through optimal illumination a source surface of the source material can be ensured.
  • the light beam after the source material or the source crucible is increasingly extended with increasing distance from the source material or the source crucible.
  • the energy density of the light beam becomes ever lower. Damage, in particular undesired damage, to the chamber wall, such as can occur behind the source material or the source crucible as seen in a focus area from the coupling section, if these are missing, can be reliably avoided in this way.
  • a coating device can be further developed such that the focus areas of at least two of the light beams overlap, in particular completely or at least substantially completely overlap, the coupling device preferably having a common coupling section for guiding these at least two light beams into the process volume.
  • the focal area of the light beam is in particular the area in which the energy density, ie the light energy per unit area, of the light beam is at a maximum. In particular, this energy density can be so high that there is a risk of damage to the material and / or elements of the coating device.
  • a spatial proximity of the two light beams, which is necessary for such a collapse of the focus areas for two separate light beams, can be provided particularly easily by guiding the two light beams through the same coupling section into the process volume.
  • a coating device can particularly preferably be developed in such a way that the process chamber has at least one heating laser diaphragm with an aperture opening, the heating laser diaphragm being arranged in the process volume such that the focus area of at least one of the light beams coincides with the aperture opening or at least essentially coincides.
  • a heating laser diaphragm can preferably be formed from a light-tight and / or material-tight diaphragm material.
  • the heating laser diaphragm Due to the arrangement of the heating laser diaphragm with its diaphragm opening at the focus area of the at least one light beam, the heating laser diaphragm itself is also between the coupling section and the source holder or the source material. rial and a corresponding source crucible. Provision can preferably be made for the heating laser diaphragm to be designed or arranged at least substantially perpendicularly to the light direction of the light beam.
  • the heating laser diaphragm Arranging the heating laser diaphragm in such a way that the focus area at least one of the light beams coincides with the diaphragm opening of the heating laser diaphragm or at least essentially coincides with the fact that the heating laser diaphragm has no or at least essentially no influence on the light beam.
  • source material which has been evaporated and / or sublimed by the light beam from the source heating laser and which is propagated in the direction of the coupling section is collected by the heating laser diaphragm. Since the heating laser diaphragm is arranged between the source holder and the coupling section, the evaporated or sublimed source material is deposited on the heating laser diaphragm or at least essentially deposited.
  • the heating laser diaphragm when viewed from the source holder, completely or at least substantially completely covers the coupling section.
  • a prevention or at least a significant reduction in the deposition of source material on the coupling section, in particular a coupling window of the coupling section, can be provided in this way.
  • An extension of the service life, a reduction in a susceptibility to maintenance or an extension of maintenance cycles with regard to the coupling section can be provided in this way.
  • a coating device can particularly preferably be developed in such a way that the aperture opening is introduced into the heating laser aperture by the laser light from the source heating laser.
  • the aperture opening is burned into the heating laser aperture or the material of the heating laser aperture is melted locally by the laser light from the source heating laser in order to to create the aperture.
  • the local arrangement of the diaphragm opening in the heating laser diaphragm can be particularly easily adapted in this way to the location of the focus area of the light beam.
  • An ideal size of the aperture, adapted to the focus area of the light beam, can also be provided in a particularly simple manner in this way.
  • the process chamber has at least one thermocouple for determining a temperature of the at least one source material and / or the corresponding source crucible, in particular the at least one thermocouple and / or the source holder having a movable fastening section for moving the Thermocouple between a measuring position in which it contacts the source material and / or the corresponding source crucible and a release position in which it is arranged for movement of the source holder and / or for moving the source holder to reversibly provide an end position of the source holder, in which the at least one thermocouple contacts the source material and / or the corresponding source crucible in its measuring position.
  • thermocouple can, in particular, provide a measurement of a temperature of the source material or of the source crucible and thus at least indirectly of the source material.
  • This temperature measurement value can in particular also be used, for example, to control and / or regulate the source heating laser, preferably with regard to an intensity of the source heating laser.
  • Constant coating conditions in a coating device according to the invention in particular with regard to the provision of vaporized and / or sublimed source material, can be provided particularly easily in this way.
  • the at least one thermocouple is preferably arranged movably in the process chamber, for example provided via a fastening section.
  • thermocouples can rest resiliently on the respective source materials or source crucibles.
  • the thermocouple By moving the thermocouple between a measuring position, contacting the source material or the source crucible, and a release position, arranged remotely with respect to the source material or the source crucible, it can in particular be provided that the source holder itself also moves without hindrance from the thermocouples can be.
  • the above-described exchange of the source holder analogous to the substrate holder can be made particularly simple in this way, in particular without being impeded by the thermocouples.
  • the source holder with arranged source materials which in turn are preferably accommodated in source crucibles, can also be arranged to be movable in the process volume.
  • the source holder in a substantially fixed position, preferably the measuring position, of the thermocouples, the source holder can be moved into an end position by lowering it towards the thermocouple, the thermocouple being in particular spring-loaded on the source material in this end position of the source holder and / or rests on the source crucible.
  • the replacement of the source holder described above can be made particularly simple, analogous to the substrate holder, in particular without being impeded by the thermocouples.
  • a coating device can also be designed such that the coupling device has at least one further coupling section in the chamber wall for guiding laser light from a substrate heating laser into the process volume, the laser light being present at least in sections as a light beam and through the laser light in the process volume the
  • the substrate material of the substrate can be heated, in particular can be heated directly by direct irradiation, the laser light preferably being adapted to the substrate material and / or an intensity of 0.01 W to 50 kW and / or a wavelength of 10 6 m to 10 4 m.
  • a substrate heating as can be provided by the light beam of the substrate heating laser, enables the substrate itself to be one of the hottest places in the process volume in addition to the source material. Generating a coating of the substrate with a layer material of special purity can be provided in this way.
  • a heated substrate also enables a particularly uniform growth of the material layer, since the evaporated layer material can draw kinetic energy from the heated substrate in order to be distributed as evenly as possible on the substrate surface.
  • a laser with a longer wavelength than the source heating laser is preferably used as the substrate heating laser, since the substrates mostly used accordingly have different absorption properties than the source materials.
  • a long-wave laser of, for example, a wavelength of 10 pm can be used for a substrate that is a ceramic and / or even an oxide. In the case of transparent substrates that are visible, the use of a CO 2 laser as a substrate heating laser has proven to be particularly advantageous.
  • the gas system has a process gas supply for supplying a process gas into the process volume and a pump system for generating a negative pressure in the process volume, the pump system comprising a magnetically mounted turbopump.
  • a process gas supply to the gas system makes it possible, in particular, to provide a special process gas for the coating atmosphere in the process volume.
  • all gaseous substances can be used as process gas.
  • any residual gas that remains in the process volume when low pressures in the range of 10 3 mbar or less are provided is understood as the process gas provided by the gas system.
  • a gas comprising molecular oxygen and / or ozone can be used as the process gas for the production of oxides.
  • a desired production of nitrides as layer material of the material layer may require the use of NH 3 or molecular nitrogen, in particular, for example, also ionized nitrogen.
  • the pump system can in turn provide a wide range of pressures in the coating atmosphere.
  • a pressure for example, a range from 10 1 ° mbar to 1 mbar can be generated by the pump system.
  • Known pump systems according to the prior art have, in particular, a variable slide valve between the process volume of the process chamber and a lubricated turbopump, the suction power of the pump system and thus the pressure in the process volume being provided in particular by an opening state of the slide valve.
  • This has the disadvantage that the total volume of the process volume is increased by the slide valve, which can make it particularly difficult to reach particularly low pressures, in particular in the lower region of the high vacuum or even in the ultra-high vacuum or lower.
  • the pump system is therefore improved in that a magnetically levitated turbopump is provided, which is preferably arranged in the pump system directly after the process volume.
  • This direct arrangement is made possible in particular by the fact that no lubricants are required due to the magnetic bearing in this turbopump, which means that when the turbopump is switched off, even in the event of a fault, such as a power failure, the turbopump can remain part of the process volume without it - contaminate it with diffusing lubricant.
  • a sucking opening of this magnetically levitated turbopump can be adapted in relation to the process volume and can be made particularly large. The volume to be pumped can thereby be reduced overall, making it easier to reach deep pressure ranges.
  • Additional fore pumps upstream of the second turbopump can also be provided for operation, for example a scroll or root pump, preferably a diaphragm pump.
  • this lubricated turbopump is only used for backing, it can be made significantly smaller than the turbopump used in the prior art. In total, pressures of up to 10 10 mbar and less can be provided in this way.
  • the slide valve described above can prevent the damaging diffusion of lubricant from the second turbopump into the process volume.
  • the two turbopumps are therefore connected in series and preferably run continuously.
  • the pressure control for the coating atmosphere can now not be achieved by varying a valve with a variable opening located in front of the large turbopump, but by varying the speed of the large turbopump.
  • This speed can be set precisely in the range of 20% to 100% (+/- 0.01%) in commercially available turbopumps and allows fine regulation of the pump output in the range corresponding to a factor of 10 in the pressure that can be provided.
  • the pressure in the range of a factor 2 can be controlled by the inflow of process gas controlled by, for example, a mass flow controller be specified and then finely adjusted using the speed control of the magnetically levitated turbopump.
  • This speed control can be provided much more precisely and reproducibly by the frequency specification with which it works with today's microprocessor electronics than a mechanical control via the slide valve according to the prior art.
  • the pressure level of the coating atmosphere in the interior of the process volume is preferably no longer controlled via the position of the slide valve but rather via the rotational frequency of the magnetically mounted turbopump, taking into account the supply rate of process gas through the process gas supply. This enables a pressure level in the process volume that is even more precise and, in particular, easier to set than in the prior art.
  • the invention thus also relates to a coating device for coating a substrate made of a substrate material with at least one material layer made of a layer material, comprising a process chamber with a process volume for receiving a substrate holder for the stationary arrangement of the substrate in the process volume, the process chamber having a chamber wall at least substantially completely enclosing the process volume, a gas system fluidly communicating with the process volume for generating a coating atmosphere in the process volume, further comprising a pump system for generating a negative pressure in the process volume, the pump system comprising a magnetically mounted turbopump in the pump system is arranged directly after the process volume.
  • the pump system can be developed as described above. With the aid of such a pump system, the coatings described above can be deposited onto the substrates with less contamination.
  • a process chamber for a coating device for coating a substrate made of a substrate material with at least one material layer made of a layer material is characterized in that the process chamber is designed for use in a coating device according to the first aspect of the invention.
  • a process chamber according to the second aspect of the invention is intended for use in a coating device according to the first aspect of the invention.
  • a process chamber according to the invention according to the second aspect of the invention can be used in or of or with a coating device according to the first aspect of the invention.
  • a process chamber according to the second aspect of the invention can preferably have at least one, in particular several, preferably all, features which have already been described above with reference to a process chamber of a coating device according to the invention according to the first aspect of the invention.
  • the object is achieved by a method for coating a substrate made of a substrate material with at least one material layer made of a layer material in a coating device according to the first aspect of the invention.
  • a method according to the invention is characterized in that for the at least partial provision of the layer material, a source material is used which is heated by continuous or at least substantially continuous laser light from a source heating laser and below a plasma generation threshold of the source len material is thermally evaporated and / or sublimed.
  • a method according to the invention according to the third aspect of the invention is carried out in a coating device according to the first aspect of the invention.
  • a source material is used which is heated by continuous or at least substantially continuous laser light from a source heating laser of the coating device and thermally evaporates below a plasma generation threshold of the source material and / or is sublimated.
  • the continuous or at least substantially continuous irradiation of the laser light onto the source material can in particular provide that a temperature of the source material fluctuates by less than 30%, preferably by less than 10%. This in turn can provide a continuous or at least substantially continuous evaporation rate and / or sublimation rate of source material.
  • This laser light is preferably coupled into a process volume of the coating device via a coupling device or its coupling section, as a result of which electrical devices for heating the source material inside the process volume can be dispensed with. All restrictions that are caused by such electrical components inside the process volume, for example with regard to the choice of one used Process gases and / or a pressure level of the coating atmosphere can be prevented in this way.
  • the source material is directly heated by the laser light and thermally evaporated and / or sublimated by directly irradiating the laser light onto a source surface of the source material.
  • a particularly good transmission of energy from the laser light of the source heating laser into the source material, in particular, for example, without an intermediate heating of a source crucible holding the corresponding source material, can thus be provided.
  • This also ensures that the source surface is one of the hottest points in the process volume. In this way, a purity of the source material can be provided over the entire coating process.
  • the method according to the invention can also be designed such that the substrate material of the substrate is heated by laser light from a substrate heating laser, in particular is heated directly by direct irradiation, preferably using laser light which is designed to match the substrate material and / or has an intensity of 0 , 01 W to 50 kW and / or has a wavelength of 10 6 m to 10 4 m.
  • substrate heating as provided by the light beam from laser light of the substrate heating laser, enables the substrate material to be heated analogously to the source material, without having to have electrical components in the process volume, with all of them advantages already described with regard to the heating of the source material. It can also be provided that in addition to the source material, the substrate itself can be formed as one of the hottest places in the process volume. Generating a coating of the substrate with a A layer material of special purity can be provided in this way.
  • a heated substrate also enables a particularly uniform growth of the material layer, since the evaporated layer material can extract kinetic energy from the heated substrate in order to be distributed as evenly as possible on the substrate surface.
  • a laser with a longer wavelength than the source heating laser is preferably used as the substrate heating laser, since the substrates mostly used accordingly have different absorption properties than the source materials.
  • a long-wave laser of, for example, a wavelength of 10 pm can be used for a substrate that is a ceramic and / or even an oxide.
  • a CO2 laser can be used as the substrate heating laser, for example, for substrate materials that are transparent.
  • the gas system of the coating device in the process volume provides a coating atmosphere with a pressure between 10 10 mbar and 1 mbar, preferably less than 10 3 mbar.
  • the use of laser light for heating and thermal evaporation and / or sublimation of the source material means that electrical devices for heating the source material inside the process volume can be dispensed with.
  • the corresponding pressure of the coating atmosphere in particular also over a wide range, in particular between 10 1 ° mbar and 1 mbar, can be adjusted to the layer material to be produced.
  • a particularly versatile and suitable coating atmosphere, in particular with regard to its pressure level, can be provided in this way.
  • the pressure level can preferably be set to an average free path length of the thermally evaporated and / or sublimed source materials in the process volume, for example a pressure level of approximately 10 3 mbar with a distance of 60 mm between the source surfaces of the source materials and the substrate to be coated .
  • This has the further advantage that vapor deposition of the coupling section, in particular, for example, an occupancy of the entry window, is additionally reduced, since source material particles are scattered several times on the process gas before reaching the coupling section or the entry window and are therefore no longer concentrated but directed Impact homogeneously across the entire inside of the chamber wall of the process chamber or be pumped out of the process chamber together with the process gas.
  • a method according to the invention can be designed such that the gas system of the coating device in the process volume provides a coating atmosphere with a gaseous substance adapted to the layer material of the material layer as the process gas, in particular with molecular oxygen and / or ozone and / or nitrogen and / or gaseous - gene selenium compounds and / or gaseous sulfur compounds as process gas.
  • a corresponding choice of a process gas can favor or even make it possible to produce some layer materials for material layers for coating the substrate.
  • molecular oxygen and / or ozone as part of the process gas can make it possible to generate oxides as the layer material of the material layer, since the oxidation processes required to form the oxides require this oxygen, which can be provided by molecular oxygen and / or ozone.
  • nitrides as layer material can be made possible by providing nitrogen, both molecular nitrogen and ionized nitrogen.
  • Gaseous selenium compounds and / or sulfur compounds are highly reactive process gases that can be used, for example, in the manufacture of solar cells.
  • highly reactive and aggressive process gases too, it is advantageous that by using light rays from a source heating laser for heating and thermal evaporation and / or sublimation of the source material onto electrical components inside the process volume, and thus the highly reactive process gases of the coating exposed atmosphere, can be dispensed with.
  • an oxide with a perovskite structure in particular an oxide with a perovskite structure doped with at least one doping element, is produced as the layer material, the oxide comprising a first metal element and a second metal element , wherein the first metal element and the second metal element, in particular also the at least one doping element, are provided as source material, preferably in a source crucible, and molecular oxygen and / or ozone are used as process gas in the coating atmosphere .
  • all solid and liquid elements, compounds and substance mixtures can be produced as a layer material by a method according to the invention.
  • a method according to the invention makes it possible to produce material layers with epitaxially oriented, crystalline solids as layer material.
  • the first metal element may comprise strontium
  • the second metal element may comprise titanium
  • the doping element may comprise niobium
  • a strontium titanate doped with niobium with strontium as the first metal element, titanium as the second metal element and niobium as the doping element can be produced as the oxide.
  • Perovskite structure can be provided only with difficulty, a modulated and / or variable doping with PLD as a coating method being impossible or at least essentially impossible.
  • a method according to the invention such an oxide with a perovskite structure can be produced as a layer material, in particular also with a variable doping.
  • all of the components of the layer to be deposited can even be volatile, so that the process is arbitrarily close to equilibrium, ie at the point at which material is deposited on the surface in the first place. starts, can be driven.
  • layers made of pure elements eg graphene
  • compounds such as boron nitride
  • the first nucleation should take place as slowly as possible so that the individual two-dimensional crystals that result from them are as large as possible will.
  • a method according to the invention in particular through the use of a method according to the invention in a coating device according to the invention, can provide any material in principle, such as, for example, an oxide with a perovskite structure, as a layer material for coating a substrate Doping of this material or oxide, preferably also variable and / or modulated doping, can be made possible.
  • a special example of such an oxide is, for example, strontium titanate, in particular with a modulated niobium doping.
  • the object is achieved by a substrate coated with at least one material layer, comprising the substrate made of a substrate material which is coated with at least one material layer made of a layer material.
  • a coated substrate according to the invention is characterized in that the substrate coated with at least one material layer is produced in a coating device according to the first aspect of the invention and / or using a method according to the third aspect of the invention.
  • a coated substrate according to the fourth aspect of the invention is thus produced using a coating device according to the first aspect of the invention and / or using a method for coating a substrate according to the third aspect of the invention.
  • Fig. 1 shows a coating device according to the invention
  • the coating device 1 shows the essential external structure of a coating device 1 according to the invention, which is designed to carry out a method according to the invention.
  • the coating device 1 according to the invention thus has, in particular, a process chamber 10, preferably a process chamber according to the invention zesshunt 10, which forms the heart of the system.
  • the coating process takes place inside the process chamber 10, not visible in this figure.
  • a possible internal structure of a process chamber 10, in particular the process volume 12 (not shown) is shown in FIG. 2.
  • a gas system 30 provides a coating atmosphere 40 (not shown) in the interior of the process chamber 10.
  • the gas system 30 has, in particular, a process gas feed 32 through which a process gas 42 can be directed into the interior of the process chamber 10.
  • a pump system 34 in particular having a magnetically levitated turbopump 36 arranged directly after the process chamber, generates the necessary pressure level in the interior of the process chamber 10.
  • pressure levels over a wide range of pressures can be provided by a pump system according to the invention, for example with a pressure between 10 10 mbar and 1 mbar, preferably less than 10 3 mbar.
  • the source material 66 (not shown) can be heated by light rays 86 from laser light 84 of a source heating laser 80 and thermally vaporized and / or sublimated.
  • the at least one source heating laser 80 is in particular an element of the coating device 1 according to the invention.
  • this laser light 84 shown here split into three light beams 86, can be guided into the interior of the process chamber 10.
  • a substrate heating laser 82 is shown, by means of which, likewise coupled in via a coupling section 20 of the coupling device 18, a substrate 52 (not shown) can be heated in the interior of the process chamber 10.
  • externally supplied laser light 84 it can be provided, in particular, that electrical components can be dispensed with at least essentially inside the process chamber 10. Restrictions which are caused by these electrical components, as are required, for example, in the case of MBE, with regard to a pressure of the coating atmosphere 40 or a choice of the process gas 42 can be avoided in this way in a coating device 1 according to the invention.
  • coating atmospheres 40 with the wide pressure range from 10 10 mbar to 1 mbar already mentioned above can be used, at least essentially without limitation also highly corrosive process gases 42 such as molecular oxygen and / or ozone and / or nitrogen and / or gaseous selenium compounds and / or gaseous sulfur compounds can be used.
  • highly corrosive process gases 42 such as molecular oxygen and / or ozone and / or nitrogen and / or gaseous selenium compounds and / or gaseous sulfur compounds can be used.
  • the process chamber 10 in particular the chamber wall 14 thereof, forms the process volume 12 in which the coating atmosphere 40, consisting of a process gas 42 is arranged with a certain pressure level.
  • the chamber wall 14 can, as shown here, be designed in multiple layers, as a result of which a cooling shield is formed within the process chamber 10 or the vacuum, which can be filled with liquid nitrogen during operation and thus cooled to about 77 K. As in the prior art of the MBE, this cooling shield forms a thermal shield and, by freezing out contaminants, reduces the partial pressures of unwanted elements and compounds in the residual gas or the coating atmosphere 40.
  • the inside 16 of the chamber wall 14 encloses the process volume 12 at least substantially completely, with passages through the chamber wall 14 for limiting and maintaining the coating atmosphere 40 in the process volume 12 being closed and sealed.
  • a substrate holder 50 with a substrate 52 is arranged in the interior of the process volume 12.
  • a source holder 60 is arranged in the interior of the process volume 12, which, as shown, can hold a plurality of source jars 62 with preferably different source materials 66.
  • suitable source materials 66 can also be arranged in the source holder 60 without a source crucible 62, for example in rod-shaped and / or rod-shaped configurations.
  • the source heating laser 80 of the coating device 1 is also shown, the three light beams 86 of laser light 84 of which are assigned to the individual source materials 66 in the source crucibles 62 and preferably irradiate them directly and immediately in order to heat them up and evaporate them thermally and / or to sublimate.
  • the source heating laser 80 is designed for the continuous or at least essentially continuous provision of laser light 84. This makes it possible to radiate the respective laser light 84 continuously or at least essentially continuously onto the corresponding source material 66, in particular in order to provide a particularly constant and controllable or controllable energy input of the laser light 84 into the corresponding source material 66. A constant and / or controllable and controllable temperature of the respective source material 66 and thus a consequent evaporation rate and / or sublimation rate can be made possible in this way.
  • an energy of the laser light 84 of the source heating laser 80 is set such that a plasma generation threshold of the source material 66 by the laser light 84 is not reached. In other words, no plasma is generated when the laser light 84 strikes the source material 66. A purely thermal evaporation and / or sublimation of the respective source material 66 can thereby be ensured.
  • the substrate holder 50 and the source holder 60 can preferably be arranged directly opposite one another, as a result of which particularly good vaporization and / or sublimation of the source material 66 or vapor deposition of the source material 66 onto the substrate 52 can take place.
  • an intensity and / or wavelength of the respective laser light 84 can preferably be adapted to the corresponding source material 66 in order to further improve the heating and in particular the thermal evaporation and / or sublimation of the respective source material 66.
  • Parameters of the laser light 84 can be, for example, an intensity of 0.01 W to 50 kW and / or a wavelength of 10 8 m to 10 5 m.
  • the light beams 86 can also have a focus area 90 which, as shown, can preferably also overlap for the individual light beams 86.
  • a heating laser diaphragm 100 with a diaphragm opening 102 is arranged to match this overlapping focus area 90. It can in turn preferably be provided here that the aperture 102 has been introduced into the heating laser aperture 100 by the light beam 86 from the source heating laser 80 itself.
  • the heating laser diaphragm 100 can be arranged between the source holder 60 and the coupling section 20 of the coupling device 18, as a result of which the vaporized and / or sub limited source material 66 can be reduced to the coupling section 20 or even completely avoided.
  • FIG. 3 This arrangement is also shown in FIG. 3, in which the three light beams 86 can be recognized even better by laser light 84.
  • FIG. 3 clearly shows that the three light beams 86 can be introduced into the process volume 12 or into the coating atmosphere 40 through a common coupling section 20 of the coupling device 18.
  • the direct path between the source holder 60 and the coupling section 20 up to the small area of the diaphragm opening 102 is covered by the heating laser diaphragm 100 through the heating laser diaphragm 100. Evaporated and / or sublimed material of the source material 66 is thus completely or at least substantially completely deposited on the heating laser diaphragm 100 and does not reach the coupling section 20.
  • FIG. 4 shows an alternative embodiment in which, in contrast to FIG. 3, six different positions for source materials 66 are now provided on the source holder 60, of which, however, only three are occupied with source material 66 in source jars 62 in the illustration shown.
  • the coupling device 18 having two coupling sections 20 which are separate from one another (not shown).
  • each of these triples of light rays 86 from laser light 84 of the source heating laser 80 in turn has a common focus area 90, at which the aperture 102 of a heating laser aperture 100 is arranged accordingly.
  • the substrate 52 in the substrate holder 50 can again be arranged opposite and parallel to the source materials 66 in the source holder 60 and can also be coated with a wide range of different source materials 66.
  • a substrate 52 according to the invention which is coated with at least one material layer 56 (cf. FIG. 8).
  • the two coupling sections 20 of the coupling device 18 can preferably be arranged such that the spatial planes 114 (not shown), each of which is the light beam 86 which is guided into the process volume 12 through one of the separate coupling sections 20, and span the surface normals 112 to the crucible surface 64 of the corresponding source crucible 62 and / or to the source surface 68 of the source material 66 in the corresponding source crucible 62, enclose an angle of less than 180 °, preferably between 90 ° and 150 °, particularly preferably of 120 ° .
  • a source crucible 62 with an arranged source material 66 is also shown schematically in FIG. 5.
  • a light beam 86 from a laser light 84 is introduced into the process volume 12 such that it is directed onto the source surface 68 of the source material 66 or at an angle of incidence 110, in particular an angle of incidence 110 of between 30 ° and 70 °, preferably 50 °. , if expanded accordingly, hits a crucible surface 64 of the source crucible 62.
  • the laser light 84 is reflected, as indicated by dashed lines in FIG. 5.
  • a beam catcher 22 is arranged on an inner side 16 of the chamber wall 14.
  • the location of the beam catcher 22 is particularly preferably in a spatial plane 114 which is spanned by the surface normal 112 and the light direction 88 of the laser light 86. Furthermore, the location is determined in accordance with the angle of incidence 110, which is at least essentially also the angle of reflection.
  • FIG. 6 shows a schematic illustration of the light beam 86 on laser light 84, coming from the source heating laser 80, again in the spatial plane 114, which has already been described in FIG. 5. It is particularly clearly visible that perpendicular to the light direction 88 the light beam 86 has its smallest extent at the focus area 90.
  • the heating laser diaphragm 100 is arranged with its diaphragm opening 102 at this focus area 90.
  • Source material 66 which evaporates and / or sublimates through the irradiated laser light 84, is thus almost completely intercepted by the heating laser diaphragm 100 and therefore cannot reach the coupling section 20 of the coupling device 18.
  • a service life of the coupling section 20, in particular a coupling window as part of the coupling section 20, can be extended in this way.
  • FIG. 7 shows possible configurations of source crucibles 62 in a source holder 60.
  • the two source crucibles 62 are each filled with a different source material 66, one of the source materials 66 being directly and directly through a light beam 86 from laser light 84 from a source heating element.
  • sers 80 is irradiated, heated and thermally evaporated and / or sublimed.
  • a temperature of the respective source material 66 can be determined by a thermocouple 70 in its measuring position 72.
  • the thermocouples 70 can have a movable fastening section 76, as a result of which the thermocouples 70 can be moved from their measuring position 72 into a release position 74.
  • FIG. 8 now shows an alternative embodiment of source crucibles 62 and source material 66 arranged therein. In contrast to the source crucibles shown in FIG. 7, these source crucibles 62 in FIG. 8 are formed with a greater depth. A correspondingly larger amount of source material 66 can be arranged in these alternative source crucibles 62.
  • FIG. 8 Also shown in FIG. 8 is a shutter diaphragm 24 with which, as shown in dashed lines, vaporized and / or sublimed source material 66 can be intercepted and thereby vapor deposition of the substrate material 54 of the substrate 52 can be switched on or off.
  • the layer material 58 of the material layer 56 which is produced in a coating device 1 according to the invention (not shown) or by a method according to the invention on the substrate material 54 of the substrate 52, can be controlled particularly well and stoichiometrically in this way.
  • a substrate heating laser 82 is shown in FIG. 8, by means of which the substrate 52 can be heated or heated.
  • the source heating laser 80 with a light beam 86 of laser light 84 and a heating laser diaphragm 100 with a diaphragm opening 102 are also shown.

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Abstract

L'invention concerne un dispositif de revêtement (1) servant à revêtir un substrat (52) composé d'un matériau (54) de substrat d'au moins une couche (56) de matériau composée d'un matériau (58) de couche. L'invention concerne également une chambre de traitement (10) pour un dispositif de revêtement (1) servant à revêtir un substrat (52) composé d'un matériau (54) de substrat d'au moins une couche (56) de matériau composée d'un matériau (58) de couche. L'invention concerne en outre un procédé de revêtement d'un substrat (52) composé d'un matériau (54) de substrat d'au moins une couche (56) de matériau composée d'un matériau (58) de couche dans un dispositif de revêtement (1). L'invention concerne selon un autre aspect un substrat (52) revêtu d'au moins une couche (56) de matériau, comportant le substrat (52) composé d'un matériau (54) de substrat, qui est revêtu d'au moins une couche (56) de matériau composée d'un matériau (58) de couche.
EP19795203.9A 2018-10-31 2019-10-28 Dispositif de revêtement, chambre de traitement, et procédé servant à revêtir un substrat et substrat revêtu d'au moins une couche de matériau Pending EP3856948A2 (fr)

Applications Claiming Priority (2)

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DE102018127262.6A DE102018127262A1 (de) 2018-10-31 2018-10-31 Beschichtungsvorrichtung sowie Verfahren zum Beschichten eines Substrats
PCT/EP2019/079430 WO2020089180A2 (fr) 2018-10-31 2019-10-28 Dispositif de revêtement, chambre de traitement, et procédé servant à revêtir un substrat et substrat revêtu d'au moins une couche de matériau

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US (1) US20210355576A1 (fr)
EP (1) EP3856948A2 (fr)
JP (1) JP7514229B2 (fr)
KR (1) KR102815276B1 (fr)
CN (3) CN113227443B (fr)
DE (1) DE102018127262A1 (fr)
WO (1) WO2020089180A2 (fr)

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EP4314375A1 (fr) * 2021-07-01 2024-02-07 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Procédé de formation d'une couche d'un composé
CN117716061A (zh) * 2021-07-28 2024-03-15 马克斯·普朗克科学促进学会 用于热蒸镀系统的设备和涂布基板前表面上涂层区域的方法
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WO2023011732A1 (fr) * 2021-08-06 2023-02-09 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Élément optique et chambre de réaction
WO2023138768A1 (fr) * 2022-01-20 2023-07-27 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Procédé d'utilisation d'un système d'évaporation par laser thermique et système d'évaporation par laser thermique
JP2025507048A (ja) * 2022-03-14 2025-03-13 マツクス－プランク－ゲゼルシヤフト ツール フエルデルング デル ヴイツセンシヤフテン エー フアウ 原料装置及びｔｌｅシステム
WO2023241795A1 (fr) * 2022-06-15 2023-12-21 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Système laser et système d'évaporation
WO2024094304A1 (fr) * 2022-11-03 2024-05-10 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Procédé de chauffage d'un substrat, dispositif de chauffage de substrat et système d'évaporation thermique par laser
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WO2020089180A9 (fr) 2020-10-01
WO2020089180A2 (fr) 2020-05-07
WO2020089180A3 (fr) 2020-06-25
DE102018127262A1 (de) 2020-04-30
CN113227443A (zh) 2021-08-06
KR102815276B1 (ko) 2025-05-30
JP2022506364A (ja) 2022-01-17
KR20210080552A (ko) 2021-06-30
CN118241167A (zh) 2024-06-25
CN113227443B (zh) 2024-03-15
JP7514229B2 (ja) 2024-07-10
CN118241168A (zh) 2024-06-25
US20210355576A1 (en) 2021-11-18

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