EP3901995A4 - Procédé de fabrication d'un film d'oxyde de gallium - Google Patents
Procédé de fabrication d'un film d'oxyde de gallium Download PDFInfo
- Publication number
- EP3901995A4 EP3901995A4 EP19898190.4A EP19898190A EP3901995A4 EP 3901995 A4 EP3901995 A4 EP 3901995A4 EP 19898190 A EP19898190 A EP 19898190A EP 3901995 A4 EP3901995 A4 EP 3901995A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- making
- oxide film
- gallium oxide
- gallium
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
- H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2921—Materials being crystalline insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2923—Materials being conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3438—Doping during depositing
- H10P14/3441—Conductivity type
- H10P14/3442—N-type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3438—Doping during depositing
- H10P14/3441—Conductivity type
- H10P14/3444—P-type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3438—Doping during depositing
- H10P14/3441—Conductivity type
- H10P14/3446—Transition metal elements; Rare earth elements
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018236030A JP6934852B2 (ja) | 2018-12-18 | 2018-12-18 | 酸化ガリウム膜の製造方法 |
| PCT/JP2019/047268 WO2020129625A1 (fr) | 2018-12-18 | 2019-12-03 | Procédé de fabrication d'un film d'oxyde de gallium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP3901995A1 EP3901995A1 (fr) | 2021-10-27 |
| EP3901995A4 true EP3901995A4 (fr) | 2022-10-26 |
Family
ID=71102807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP19898190.4A Ceased EP3901995A4 (fr) | 2018-12-18 | 2019-12-03 | Procédé de fabrication d'un film d'oxyde de gallium |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US12327725B2 (fr) |
| EP (1) | EP3901995A4 (fr) |
| JP (3) | JP6934852B2 (fr) |
| KR (1) | KR102705140B1 (fr) |
| CN (1) | CN113196458B (fr) |
| TW (1) | TWI821481B (fr) |
| WO (1) | WO2020129625A1 (fr) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6875336B2 (ja) | 2018-08-27 | 2021-05-26 | 信越化学工業株式会社 | 成膜方法 |
| JP6934852B2 (ja) * | 2018-12-18 | 2021-09-15 | 信越化学工業株式会社 | 酸化ガリウム膜の製造方法 |
| JP6925548B1 (ja) | 2020-07-08 | 2021-08-25 | 信越化学工業株式会社 | 酸化ガリウム半導体膜の製造方法及び成膜装置 |
| JP7737685B2 (ja) * | 2020-12-12 | 2025-09-11 | 高知県公立大学法人 | Ｇａ２Ｏ３薄膜の製造方法 |
| TWM633563U (zh) * | 2021-03-02 | 2022-11-01 | 日商信越化學工業股份有限公司 | 製膜系統及製膜裝置 |
| CN113088926B (zh) * | 2021-03-12 | 2022-10-21 | 江苏师范大学 | 一种通过磁场控制α-Ga2O3掺杂浓度的薄膜沉积系统及方法 |
| WO2023047895A1 (fr) * | 2021-09-22 | 2023-03-30 | 信越化学工業株式会社 | Procédé de formation de film, dispositif de formation de film et film d'oxyde cristallin |
| KR20240074787A (ko) * | 2021-10-14 | 2024-05-28 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 성막 장치 및 제조 방법 |
| WO2023079787A1 (fr) * | 2021-11-02 | 2023-05-11 | 信越化学工業株式会社 | Dispositif de formation de film, procédé de formation de film, film semiconducteur d'oxyde et corps multicouche |
| CN117836466A (zh) * | 2022-02-04 | 2024-04-05 | 株式会社村田制作所 | 雾化cvd成膜装置和成膜方法 |
| WO2024150674A1 (fr) * | 2023-01-12 | 2024-07-18 | 信越化学工業株式会社 | Film d'oxyde métallique cristallin, procédé pour sa formation, sa solution de matériau de départ, structure multicouche et dispositif à semi-conducteurs |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160222511A1 (en) * | 2015-01-29 | 2016-08-04 | Flosfia Inc. | Apparatus and method for forming film |
| US20170179249A1 (en) * | 2015-12-18 | 2017-06-22 | Flosfia Inc. | Semiconductor device |
| WO2018004009A1 (fr) * | 2016-06-30 | 2018-01-04 | 株式会社Flosfia | SEMI-CONDUCTEUR À OXYDE DE TYPE p ET PROCÉDÉ POUR SA FABRICATION |
| US20180061952A1 (en) * | 2016-08-31 | 2018-03-01 | Flosfia Inc. | Crystalline oxide semiconductor film, crystalline oxide semiconductor device, and crystalline oxide semiconductor system |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5397794U (fr) | 1977-01-12 | 1978-08-08 | ||
| JP2671367B2 (ja) | 1988-04-06 | 1997-10-29 | 富士通株式会社 | 気相エピタキシャル成長装置 |
| JP2003007629A (ja) * | 2001-04-03 | 2003-01-10 | Canon Inc | シリコン系膜の形成方法、シリコン系膜および半導体素子 |
| JP2004224675A (ja) * | 2003-01-27 | 2004-08-12 | Fuji Photo Film Co Ltd | １３族窒化物半導体ナノ粒子の製造方法 |
| JP5124760B2 (ja) | 2004-04-19 | 2013-01-23 | 静雄 藤田 | 成膜方法及び成膜装置 |
| US7390704B2 (en) * | 2004-06-16 | 2008-06-24 | Semiconductor Energy Laboratory Co., Ltd. | Laser process apparatus, laser irradiation method, and method for manufacturing semiconductor device |
| KR101353334B1 (ko) | 2006-11-22 | 2014-02-18 | 소이텍 | 갈륨 질화물 증착에서의 반응 가스 감소 |
| JP2012046772A (ja) | 2010-08-24 | 2012-03-08 | Sharp Corp | ミストｃｖｄ装置及びミスト発生方法 |
| JP5793732B2 (ja) * | 2011-07-27 | 2015-10-14 | 高知県公立大学法人 | ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法 |
| US20130047918A1 (en) * | 2011-08-22 | 2013-02-28 | Soitec | Deposition systems including a precursor gas furnace within a reaction chamber, and related methods |
| JP6137668B2 (ja) | 2012-08-26 | 2017-05-31 | 国立大学法人 熊本大学 | 酸化亜鉛結晶層の製造方法及びミスト化学気相成長装置 |
| JP5397794B1 (ja) | 2013-06-04 | 2014-01-22 | Ｒｏｃａ株式会社 | 酸化物結晶薄膜の製造方法 |
| JP2016051824A (ja) * | 2014-08-29 | 2016-04-11 | 高知県公立大学法人 | エピタキシャル成長方法および成長装置ならびに量子井戸構造の作製方法 |
| JP2016126988A (ja) | 2015-01-08 | 2016-07-11 | 株式会社Flosfia | 透明導電膜および積層構造体 |
| JP6478103B2 (ja) | 2015-01-29 | 2019-03-06 | 株式会社Flosfia | 成膜装置および成膜方法 |
| JP6547225B2 (ja) | 2015-02-06 | 2019-07-24 | 高知県公立大学法人 | 膜厚算出方法、成膜装置およびプログラム |
| JP6876895B2 (ja) * | 2015-02-25 | 2021-05-26 | 株式会社Flosfia | 結晶性酸化物半導体膜、半導体装置 |
| JP6620328B2 (ja) * | 2015-09-08 | 2019-12-18 | 株式会社Flosfia | 深紫外光発生用ターゲット、深紫外光源および深紫外発光素子 |
| JP6945121B2 (ja) * | 2015-09-30 | 2021-10-06 | 株式会社Flosfia | 結晶性半導体膜および半導体装置 |
| JP6732201B2 (ja) * | 2015-11-11 | 2020-07-29 | 国立大学法人京都工芸繊維大学 | 発光素子 |
| JP6793942B2 (ja) * | 2016-11-01 | 2020-12-02 | 国立大学法人 和歌山大学 | 酸化ガリウムの製造方法及び結晶成長装置 |
| JP6934852B2 (ja) | 2018-12-18 | 2021-09-15 | 信越化学工業株式会社 | 酸化ガリウム膜の製造方法 |
-
2018
- 2018-12-18 JP JP2018236030A patent/JP6934852B2/ja active Active
-
2019
- 2019-12-03 WO PCT/JP2019/047268 patent/WO2020129625A1/fr not_active Ceased
- 2019-12-03 KR KR1020217017793A patent/KR102705140B1/ko active Active
- 2019-12-03 CN CN201980083078.5A patent/CN113196458B/zh active Active
- 2019-12-03 EP EP19898190.4A patent/EP3901995A4/fr not_active Ceased
- 2019-12-03 US US17/299,051 patent/US12327725B2/en active Active
- 2019-12-17 TW TW108146090A patent/TWI821481B/zh active
-
2021
- 2021-08-24 JP JP2021136607A patent/JP7164685B2/ja active Active
-
2022
- 2022-10-20 JP JP2022168063A patent/JP7374282B2/ja active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160222511A1 (en) * | 2015-01-29 | 2016-08-04 | Flosfia Inc. | Apparatus and method for forming film |
| US20170179249A1 (en) * | 2015-12-18 | 2017-06-22 | Flosfia Inc. | Semiconductor device |
| WO2018004009A1 (fr) * | 2016-06-30 | 2018-01-04 | 株式会社Flosfia | SEMI-CONDUCTEUR À OXYDE DE TYPE p ET PROCÉDÉ POUR SA FABRICATION |
| EP3480841A1 (fr) * | 2016-06-30 | 2019-05-08 | Flosfia Inc. | SEMI-CONDUCTEUR À OXYDE DE TYPE p ET PROCÉDÉ POUR SA FABRICATION |
| US20180061952A1 (en) * | 2016-08-31 | 2018-03-01 | Flosfia Inc. | Crystalline oxide semiconductor film, crystalline oxide semiconductor device, and crystalline oxide semiconductor system |
Non-Patent Citations (1)
| Title |
|---|
| See also references of WO2020129625A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| US12327725B2 (en) | 2025-06-10 |
| CN113196458A (zh) | 2021-07-30 |
| JP2023011687A (ja) | 2023-01-24 |
| JP7374282B2 (ja) | 2023-11-06 |
| JP2020098846A (ja) | 2020-06-25 |
| JP6934852B2 (ja) | 2021-09-15 |
| KR102705140B1 (ko) | 2024-09-09 |
| US20220223406A1 (en) | 2022-07-14 |
| EP3901995A1 (fr) | 2021-10-27 |
| CN113196458B (zh) | 2025-03-07 |
| WO2020129625A1 (fr) | 2020-06-25 |
| JP7164685B2 (ja) | 2022-11-01 |
| KR20210101232A (ko) | 2021-08-18 |
| JP2021192439A (ja) | 2021-12-16 |
| TW202035771A (zh) | 2020-10-01 |
| TWI821481B (zh) | 2023-11-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP3901995A4 (fr) | Procédé de fabrication d'un film d'oxyde de gallium | |
| EP3600188C0 (fr) | Procédé de fabrication d'un pansement | |
| EP3761864C0 (fr) | Procédé de fabrication d'une plate-forme de micro-aiguilles | |
| EP3731312A4 (fr) | Procédé de fabrication d'une électrode négative | |
| EP3774243A4 (fr) | Procédé de fabrication d'un mat déposé par voie sèche pour thermoformage | |
| EP3442005A4 (fr) | Procédé de fabrication de tranche composite pourvue d'un film mince d'oxyde monocristallin | |
| EP3323500A4 (fr) | Procédé de fabrication d'un film polymère poreux | |
| EP3846343A4 (fr) | Substrat composite et procédé de fabrication d'un substrat composite | |
| MA49078A (fr) | Procédé de fabrication d'un film combiné thermoplastique | |
| EP4000489A4 (fr) | Procédé de commande d'aspirateur | |
| EP4047671A4 (fr) | Film piézoélectrique et son procédé de fabrication | |
| EP3570363A4 (fr) | Procédé de fabrication d'un bloc-batterie | |
| EP3862404A4 (fr) | Procédé de fabrication d'un objet lié et objet lié | |
| EP3816330A4 (fr) | Film d'oxyde cristallin | |
| EP3857303C0 (fr) | Procédé de réglage de mise au point d'une caméra | |
| EP3992698A4 (fr) | Procédé de fabrication de lentille polarisante, film polarisant et lentille polarisante | |
| FR3050867B1 (fr) | Procede de fabrication d'un transistor a nanocouches a canal vertical | |
| EP4005789A4 (fr) | Procédé de fabrication de film stratifié et procédé de fabrication d'élément stratifié | |
| EP3629084C0 (fr) | Ébauche de photomasque de type à décalage de phase, procédé de fabrication d'un photomasque et photomasque de type à décalage de phase | |
| EP3508437A4 (fr) | Procédé de fabrication d'un film d'emballage souple | |
| EP3808559A4 (fr) | Procédé de fabrication d'un élément stratifié | |
| EP3706295A4 (fr) | Procédé de fabrication d'armature | |
| EP3750173A4 (fr) | Procédés de fabrication d'un supraconducteur | |
| EP3992696A4 (fr) | Procédé de fabrication de lentille polarisante, film polarisant et lentille polarisante | |
| EP3797010A4 (fr) | Procédé de fabrication d'un moulage |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE |
|
| PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE |
|
| 17P | Request for examination filed |
Effective date: 20210610 |
|
| AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
| RAP3 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: SHIN-ETSU CHEMICAL CO., LTD. |
|
| DAV | Request for validation of the european patent (deleted) | ||
| DAX | Request for extension of the european patent (deleted) | ||
| A4 | Supplementary search report drawn up and despatched |
Effective date: 20220927 |
|
| RIC1 | Information provided on ipc code assigned before grant |
Ipc: C23C 16/448 20060101ALI20220921BHEP Ipc: C23C 16/40 20060101ALI20220921BHEP Ipc: H01L 21/368 20060101ALI20220921BHEP Ipc: H01L 21/365 20060101AFI20220921BHEP |
|
| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: EXAMINATION IS IN PROGRESS |
|
| 17Q | First examination report despatched |
Effective date: 20240913 |
|
| REG | Reference to a national code |
Ref country code: DE Ref legal event code: R003 |
|
| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION HAS BEEN REFUSED |
|
| 18R | Application refused |
Effective date: 20251110 |