EP4004962A1 - Système de faisceau de particules et son utilisation pour ajuster de manière flexible l'intensité de courant de faisceaux de particules individuels - Google Patents

Système de faisceau de particules et son utilisation pour ajuster de manière flexible l'intensité de courant de faisceaux de particules individuels

Info

Publication number
EP4004962A1
EP4004962A1 EP20740177.9A EP20740177A EP4004962A1 EP 4004962 A1 EP4004962 A1 EP 4004962A1 EP 20740177 A EP20740177 A EP 20740177A EP 4004962 A1 EP4004962 A1 EP 4004962A1
Authority
EP
European Patent Office
Prior art keywords
particle
aperture plate
particle beam
aperture
lens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP20740177.9A
Other languages
German (de)
English (en)
Inventor
Stefan Schubert
Dirk Zeidler
Georgo Metalidis
Hans Fritz
Ralf Lenke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss Multisem GmbH
Original Assignee
Carl Zeiss Multisem GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss Multisem GmbH filed Critical Carl Zeiss Multisem GmbH
Publication of EP4004962A1 publication Critical patent/EP4004962A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261—Details
    • H01J37/265—Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/145—Combinations of electrostatic and magnetic lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261—Details
    • H01J37/263—Contrast, resolution or power of penetration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. program control
    • H01J37/3023—Program control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0455—Diaphragms with variable aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H01J2237/04924—Lens systems electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H01J2237/04926—Lens systems combined
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H01J2237/04928—Telecentric systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/1205—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/121—Lenses electrostatic characterised by shape
    • H01J2237/1215—Annular electrodes

Definitions

  • the invention relates to particle beam systems which operate with a large number of particle beams.
  • Multi-beam particle microscopes like single-beam particle microscopes, can be used to analyze objects on a microscopic scale. For example, by means of these particle microscopes, images of an object can be recorded which represent a surface of the object. In this way, for example, the structure of the surface can be analyzed. While a single particle beam of charged particles such as electrons, positrons, muons or ions is used in a single-beam particle microscope to analyze the object, a plurality of particle beams is used in a multi-beam particle microscope.
  • the majority of the particle beams which are also referred to as bundles, are directed simultaneously onto the surface of the object, whereby a significantly larger area of the surface of the object can be scanned and analyzed during the same period of time compared with a single-beam particle microscope.
  • WO 2005/024 881 A2 a multitude particle beam system in the form of an electron microscopy system which works with a multitude of electron beams in order to scan an object to be examined in parallel with a bundle of electron beams.
  • the bundle of electron beams is generated by directing an electron beam generated by an electron source onto a multi-aperture plate which has a multiplicity of openings. Some of the electrons of the electron beam strike the multi-aperture plate and are absorbed there, and another part of the steel passes through the openings of the multi-aperture plate, so that an electron beam is formed in the beam path behind each opening, the cross-section of which is defined by the cross-section of the opening.
  • suitably selected electrical fields which are provided in the beam path in front of and / or behind the multi-aperture plate, mean that each opening in the Multi-aperture plate acts as a lens on the electron beam passing through the opening, so that the electron beams are focused in a plane which is at a distance from the multi-aperture plate.
  • the plane in which the foci of the electron beams are formed is mapped onto the surface of the object to be examined by subsequent optics, so that the individual electron beams hit the object as primary beams. There they generate interaction products emanating from the object, such as backscattered electrons or secondary electrons, which are formed into secondary beams and directed onto a detector by further optics.
  • each of the secondary beams strikes a separate detector element, so that the electron intensities detected with it provide information on the object at the location where the corresponding primary beam strikes the object.
  • the bundle of primary rays is systematically scanned over the surface of the object in order to generate an electron microscopic image of the object in the manner customary for scanning electron microscopes.
  • a high resolution in the particle-optical imaging is of great relevance in practice.
  • the resolution depends on the numerical aperture in the object plane and on the beam current of the individual particle beams.
  • the values of the numerical aperture and the beam current of the individual particle beams are closely related to one another or are linked to one another via the imaging scale. Additional factors influencing the resolution are aberrations, these contributions being dependent on the numerical aperture in different ways.
  • a particle beam system which has the following:
  • At least one particle source configured to generate a divergent beam of charged particles
  • a condenser lens system through which the charged particle beam passes; a pre-multi-lens array, wherein the pre-multi-lens array has a pre-counter electrode with a central opening through which the charged particle beam passes, and wherein the pre-multi-lens array is one in the beam path after the pre-counter electrode arranged pre-multi-aperture plate, which is arranged so that the charged particles pass through the pre-multi-aperture plate in the form of a plurality of charged individual particle beams;
  • a multi-lens array which is arranged in the beam path after the pre-multi-lens array, wherein the multi-lens array has a multi-aperture plate with a plurality of openings that are at least partially affected by the charged individual particle beams are traversed, and wherein the multi-lens array has a counter-electrode, which is arranged in the beam path after the multi-aperture plate and has a central opening through which the plurality of individual particle beams essentially penetrate;
  • a controller which is set up to supply adjustable excitations to the condenser lens system and the pre-counter electrode in such a way that the charged particles can telecentrically impinge on the pre-multi-aperture plate.
  • the controller is preferably configured to adjust the current strength of the individual particle beams.
  • the charged particles can be, for example, electrons, positrons, muons or ions or other charged particles. They are preferably electrons that are generated, for example, with the help of a thermal field emission source (TFE). But other particle sources can also be used.
  • TFE thermal field emission source
  • the condenser lens system can have one, two or more condenser lenses.
  • the condenser lens system preferably has a double condenser.
  • the condenser lens system preferably comprises exactly two condenser lenses, particularly preferably two magnetic condenser lenses.
  • a multi-aperture plate is a plate with a large number of openings. It is possible that a voltage is applied to this multi-aperture plate as a whole. This may or may not be the case. In any case, all openings in a multi-aperture plate are on a uniform, globally identical electrical and magnetic potential.
  • a multi-lens array in the context of this patent application has a large number of lenses arranged essentially parallel to one another, the refractive powers of which can be varied. The lens effect is generated by a combination of multi-aperture plate and counter electrode and the refractive power of the lenses can be varied in particular by different excitations of the counter electrode.
  • the heart of a particle beam system with a large number of individual particle beams is formed by the multi-lens array.
  • the multi-lens array includes a multi-aperture plate and a counter electrode. At the latest when the multi-lens array is penetrated, the individual particle beams are generated and each focussed after the multi-lens array.
  • the resulting foci correspond to several images of the Particle source and can be viewed in the following as starting points or virtual multi-source array for the subsequent particle-optical images.
  • the focusing effect of the multi-lens array comes about through different electric field strengths in front of and after the multi-aperture plate, and the counter-electrode with its central opening arranged in the beam path after the multi-aperture plate also ensures that the individual particle beams are torn apart or the foci of the individual particle beams are further apart than the individual openings of the multi-aperture plate. This fact is known in principle from the prior art.
  • a pre-multi-aperture plate in the beam path before the multi-lens array, this pre-multi-aperture plate then being used to shape the individual particle beams or to cut them out of the beam of charged particles.
  • Arranging a pre-multi-aperture plate in front of the multi-lens array has the advantage that the multi-aperture plate of the multi-lens array is not charged by particles hitting it; at the same time, particle beam systems according to the prior art can also function without the aforementioned pre-multi-aperture plate.
  • a pre-multi-aperture plate is provided which is a functional component of the pre-multi-lens array.
  • the current strength of individual particle beams is now set as follows:
  • the condenser lens system is excited differently. It is so that the original divergent beam of charged particles is collimated by the condenser lens system and that these collimated beams strike the multi-lens array or a pre-multi-aperture plate possibly arranged in front of it. Strictly speaking, the condenser lens system is therefore a collimation lens system.
  • the total beam of charged particles has a different beam diameter depending on the excitation of the condenser lens system. This means that the current or the beam current density that applies to a single particle beam can be varied via the settings of the condenser lens system.
  • the particle beam system according to the invention has a pre-multi-lens system Array which is constructed as follows:
  • the pre-multi-lens array has a pre-counter electrode with a central opening through which the beam of charged particles passes.
  • the pre-multi-lens array has a multi-aperture plate arranged in the beam path downstream of the pre-counter-electrode, which is arranged such that the charged particles pass through the pre-multi-aperture plate in the form of a plurality of charged individual particle beams.
  • This pre-multi-aperture plate can be a pre-multi-aperture plate that is already known / existing per se.
  • the pre-counter electrode is combined with the pre-multi-aperture plate to form the pre-multi-lens array and that an adjustable voltage can be applied to the pre-counter electrode.
  • the pre-multi-lens array in its entirety thus also has a focusing effect on the charged individual particle beams passing through it.
  • a global lens field is created in the area of the pre-counter electrode, which acts on the beam of charged particles that penetrate the condenser lens system.
  • the irradiation conditions of the condenser lens system can be varied over a wider range, because after passing through the condenser lens system, the charged particle beam does not have to be collimated according to the invention.
  • the charged particle beam it is possible for the charged particle beam to enter the global lens field of the pre-counter electrode in a convergent or divergent manner after passing through the condenser lens system.
  • the control which supplies adjustable excitations, i.e. voltages and / or currents, to the condenser lens system and the pre-counter electrode, it is possible to select these excitations so that the charged particles can meet the telecentricity condition when they hit the pre-multi-aperture plate. Satisfying this telecentricity condition is preferred for the quality of the particle-optical imaging in the further beam path through the particle beam system, since this facilitates the construction of the particle-optical components.
  • the beam flow of the individual particle beams can be varied without structural changes / extensions of the column.
  • the dominant effect of the combination of features according to the invention is the change in the effective numerical aperture of the source for changing the current.
  • the decisive factor in this picture is from which radiation angle / solid angle of the particle source a single particle beam draws its charged particles.
  • the openings of the pre-multi-aperture plate and the multi-aperture plate of the multi-lens array can have the same diameter, but it is also possible that they have different diameters.
  • the diameter of the apertures of the pre-multi-aperture plate can be smaller than the diameter of the apertures of the multi-aperture plate of the multi-lens array.
  • the openings of the pre-multi-aperture plate and the multi-aperture plate of the multi-lens array are preferably circular and the individual openings are arranged overall in a hexagonal structure, but other possible arrangement options are also possible.
  • the number of openings in the pre-multi-aperture plate and the multi-aperture plate is matched to the number of individual particle beams. It is advantageous if the number of particle beams is 3n (n-1) +1 with n any natural number, in the case of a hexagonal arrangement.
  • the particle beam system has micro-optics that comprise the multi-lens array.
  • the micro-optics also comprise the pre-multi-aperture plate.
  • micro-optics are an assembly of particle-optical elements that are combined in micro-optics.
  • the assembly can have a special holder for the assembly or a common socket for the assembly.
  • the micro-optics can also have further particle-optical components. Examples of this are, for example, multistigmators or other multi-lens arrays, where the lens effects of the individual openings of multi-aperture plates can also be set individually for each individual particle beam, e.g. for the individual correction of a focal length of individual particle beams to correct any curvature of the field . Components other than those mentioned can also be part of the micro-optics.
  • the micro-optics have a mount that is at ground potential.
  • the pre-multi-aperture plate and the multi-aperture plate of the multi-lens array are also typically at ground potential.
  • voltages in the range of a few kilovolts are applied to the counter electrode or the pre-counter electrode, e.g. + -12 kV, + -15 kV, + -16 kV or + -20 kV.
  • the particle beam system can have a pre-additional electrode with a central opening which is arranged in the beam path after the pre-counterelectrode close in front of the pre-multi-aperture plate and to which an adjustable voltage can be supplied by means of the controller.
  • an adjustable voltage can be supplied by means of the controller.
  • the particle beam system furthermore has an additional post electrode with a central opening, which is arranged in the beam path close to the multi-aperture plate and in front of the counter electrode and to which an adjustable voltage can be supplied by means of the controller.
  • the selected distance between the pre-additional electrode and the pre-multi-aperture plate and the distance between the post-additional electrode and the multi-aperture plate have an influence on how strong the additional setting options are due to the excitations or voltages applied to the pre-additional electrode or the post-additional electrode .
  • a voltage applied to the pre-additional electrode can then be between approximately -1000V and + 1000V.
  • the post-additional electrode can be somewhat further away from the multi-aperture plate than the pre-additional electrode from the pre-multi-aperture plate.
  • the voltage applied to the post additional electrode can then be selected approximately as the mean value between that applied to the counter electrode and ground potential. This has the advantage that the correction of an image field curvature can essentially be adjusted via the excitation of the pre-additional electrode and the pitch can be adjusted with the post-additional electrode. Other arrangements of the distances and excitations and thus other setting options are also possible.
  • the condenser lens system has two condenser lenses.
  • both condenser lenses are magnetic condenser lenses.
  • the condenser lens system has exactly one magnetic condenser lens and one electrostatic condenser lens, the electrostatic condenser lens being arranged in the beam path after the magnetic condenser lens, and a booster electrode being arranged between the magnetic condenser lens and the electrostatic condenser lens, which can be controlled by the controller and by which the electrostatic condenser lens is excitable.
  • a variable electrostatic lens is formed, which acts as a lower condenser lens.
  • the upper end of the booster electrode forms the fields for the upper condenser lens together with the cathode of the emitter and a magnetic lens.
  • the particle beam system furthermore has a beam-current-limiting multi-aperture plate system comprising a beam-current-limiting multi-aperture plate with a plurality of openings, the beam-current-limiting multi-aperture plate system being arranged in the beam path between the pre-multi-lens array and the multi-lens array and designed to be insertable into the beam path.
  • a beam-current-limiting multi-aperture plate system comprising a beam-current-limiting multi-aperture plate with a plurality of openings
  • the beam-current-limiting multi-aperture plate system being arranged in the beam path between the pre-multi-lens array and the multi-lens array and designed to be insertable into the beam path.
  • Sufficient installation space is available between the pre-multi-lens array and the multi-lens array to arrange a variably usable multi-aperture plate system. It can be pushed in using a mechanical actuator.
  • the beam-current-limiting multi-aperture plate system serves to further limit the beam current that reaches the pre-multi-aperture plate and the subsequent particle optics. Because the multi-aperture plate system, which limits the jet flow, can be pushed in, great flexibility and variability can be achieved here.
  • the jet flow-limiting multi-aperture plate system can have precisely one jet-flow-limiting multi-aperture plate, but the multi-aperture plate system can also have two or more jet-flow-limiting multi-aperture plates. A positioning accuracy of a beam-current-limiting multi-aperture plate in the range of approximately one micrometer can be achieved mechanically.
  • the multi-aperture plate system which limits the jet current it is possible to vary or reduce the current strength by up to a further factor of 10. However, the diffraction error with small apertures and the lens error with large apertures would reduce the achievable resolution over the current variation range.
  • the invention enables the resolution variation to be minimized and the resolution to be optimized.
  • a multi-aperture plate that limits the beam current can also be permanently arranged between the pre-multi-lens array and the multi-lens array. This is preferably at ground potential.
  • the openings of the at least one jet-flow-limiting multi-aperture plate are circular and / or annular. Compared to circular openings, circular openings have the advantage that the numerical aperture does not change or does not become smaller. Strictly speaking, a central maximum in the diffraction pattern of a circular opening is even narrower than the diffraction pattern of a conventional circular opening, although higher secondary maxima arise in the case of an annular opening.
  • An aperture can also have several annular rings, possibly in addition to a central smaller circular opening.
  • the jet-flow-limiting multi-aperture plate system has two multi-aperture plates, which can be displaced essentially parallel to one another, each with a large number of openings, so that an effective multi-aperture plate opening size can be set for the individual particle beams passing through the jet-flow-limiting multi-aperture plate system.
  • the openings of the two multi-aperture plates which can be displaced relative to one another are essentially identical in size and have essentially the same geometric shape.
  • the size of a resulting multi-aperture plate opening can be easily adjusted when the two multi-aperture plates are pushed one over the other or relatively opposite one another, and it is possible to select the relative movement so that the shape of the resulting multi-aperture plate opening does not change.
  • the provision of identical openings facilitates the manufacture of the multi-aperture plates.
  • the openings of the multi-aperture plates which can be displaced relative to one another are circular or square.
  • the plates can be shifted relative to one another within the XY plane if Z denotes the central optical axis of the system.
  • the resulting multi-aperture plate opening can then have the same shape as the respective openings of the multi-aperture plates, namely also be square. If a shifting process is carried out differently, the resulting opening can represent a rectangle or even a triangle (rotation of the plates against each other), but this is not advantageous.
  • the effective multi-aperture plate opening is what is known as a delta circle, which is approximately elliptical. Because of the essentially elliptical resulting individual particle beam, there is then a further course of the beam path Multi-stigmator advantageous in order to correct the astigmatism resulting from the elliptical beam profile.
  • the beam-current-limiting multi-aperture plate system has two or more multi-aperture plates arranged sequentially in the beam path, each with a large number of openings, with two deflectors being arranged and controllable between the two multi-aperture plates in such a way that essentially a parallel offset of individual particle beams to the optical axis Enforcement of the multi-aperture plate system can be achieved.
  • the two multi-aperture plates are preferably structurally identical and their openings are, in particular, exactly one above the other in the Z direction or beam flow direction. If the two deflectors are switched off, a particle beam then passes through the two multi-aperture plates essentially undisturbed, i.e.
  • the particle beam system furthermore has the following:
  • An intermediate image plane which is arranged in the direction of the beam path after the multi-lens array and in which real foci of the individual particle beams are formed which are spaced apart from one another with a pitch 1;
  • a field lens system which is arranged in the direction of the beam path after the intermediate image plane;
  • an objective lens in particular magnetic, arranged in the direction of the beam path after the field lens system;
  • the particle beam system according to the invention can therefore be combined with the other components of already known multiple particle beam systems and in particular with known multiple particle microscopes. It is preferred that the control of the particle beam system according to the invention is set up to control the particle-optical components of the particle beam system in such a way that the pitch 2 can be set in the object plane and, in particular, can be kept constant with different beam currents of the individual particle beams. For such a setting, the particle beam system according to the invention requires sufficient degrees of freedom or particle-optical components that can be varied independently of one another.
  • the beam spacing or pitch of the grid arrangement of the large number of individual particle beams is in principle fixedly predetermined over the selected multi-aperture plates.
  • the pitch and the numerical aperture are coupled to one another and cannot be changed independently of one another. If a large number of individual particle beams are imaged by a common optical system, the change in a numerical aperture always inevitably leads to a change in the pitch, which is undesirable. A change in the numerical aperture without a simultaneous change in the pitch is therefore not possible in ordinary multi-beam particle microscopes. Instead, a further particle-optical component is required for such adjustments, which brings an additional degree of freedom into the system. This can be an additional field lens, for example.
  • a conventional multi-beam particle microscope with a field lens system consisting of three field lenses can be supplemented, for example, with a fourth field lens outside the field lens system. It is important here to provide an additional global lens field for which the Helmholtz-Lagrange invariant is fulfilled.
  • the controller is set up to control the particle-optical components of the particle beam system in such a way that the numerical aperture in the object plane can be set and, in particular, the resolution of the image in the object plane can be optimized for a given beam current strength.
  • the control is preferably configured to control the particle-optical components in such a way that other parameters of the particle-optical imaging such as focus, rotation and / or telecentricity can also be set in the object plane.
  • the control is preferably configured in such a way that the values of these other particle-optical parameters can be kept constant in the event of a change in the beam current strength and / or the numerical aperture in the object plane.
  • this relates to a use of a particle beam system as described above for adjusting the current strength of individual particle beams. Adjusting the current strength of the individual particle beams opens up a wide range of possibilities for varying other parameters of a particle-optical image and in particular it allows the operation of a particle beam system to be switched between low resolution on the one hand and high resolution on the other hand, since the resolution is very dependent on the beam current.
  • this relates to the use of the particle beam system as described above for setting a particularly optimal resolution in an object plane.
  • the beam current, the numerical aperture, the distance between the individual particle beams in the object plane and the image scale of the image of the source are closely related.
  • the use of the particle beam system according to the invention offers particularly good flexibility and enables, in particular, an optimal resolution to be set even with a given beam current of the individual particle beams.
  • this relates to a multi-beam particle microscope with a particle beam system as described above.
  • the particle beam system according to the invention can thus be supplemented by the components of a multi-beam particle beam microscope known per se, including in particular any known detection unit.
  • a multi-beam particle beam microscope known per se, including in particular any known detection unit.
  • Fig. 3 shows schematically the illumination of a micro-optics by means of a
  • Fig. 4 shows schematically an embodiment of the invention with convergent
  • FIG. 5 shows schematically the embodiment of the invention shown in FIG. 4 with divergent beam guidance according to the condenser lens system
  • Fig. 6 shows schematically a further embodiment of the invention with a
  • Fig. 7 shows schematically a further embodiment of the invention with a
  • FIG. 8 schematically shows the embodiment of the invention shown in FIG. 7 with an additional pre-additional electrode
  • FIG. 9 shows schematically a multi-aperture plate system with two or more multi-aperture plates which can be displaced relative to one another for the purpose of beam current variation
  • Fig. 10 shows schematically a multi-aperture plate system with two sequentially
  • the particle beam system 1 is a schematic representation of a particle beam system 1 in the form of a multi-beam particle microscope 1 which uses a plurality of particle beams.
  • the particle beam system 1 generates a large number of particle beams which strike an object to be examined in order to generate interaction products there, for example secondary electrons, which emanate from the object and are subsequently detected.
  • the particle beam system 1 is of the scanning electron microscope (SEM) type, which uses several primary particle beams 3 that impinge on a surface of the object 7 at several locations 5 and there generate several spatially separated electron beam spots or spots.
  • the object 7 to be examined can be of any type, for example a semiconductor wafer or a biological sample, and can comprise an arrangement of miniaturized elements or the like.
  • the surface of the object 7 is arranged in a first plane 101 (object plane) of an objective lens 102 of an objective lens system 100.
  • the enlarged section h of FIG. 1 shows a top view of the object plane 101 with a regular rectangular field 103 of impact locations 5 which are formed in the first plane 101.
  • the number of impact locations is 25, which form a 5 ⁇ 5 field 103.
  • the number 25 at points of impact is a number chosen for the sake of simplicity of representation. In practice, the number of rays, and thus the number of points of incidence, can be selected to be significantly larger, such as 20 ⁇ 30, 100 ⁇ 100 and the like.
  • the field 103 of points of incidence 5 is a substantially regular rectangular field with a constant distance Pi between adjacent points of incidence.
  • Exemplary values of the distance Pi are 1 micrometer, 10 micrometers and 40 micrometers.
  • a diameter of the beam spots formed in the first plane 101 can be small. Exemplary values for this diameter are 1 nanometer, 5 nanometers, 10 nanometers, 100 nanometers and 200 nanometers.
  • the focusing of the particle beams 3 to form the beam spots 5 is carried out by the objective lens system 100.
  • the primary particles hitting the object generate interaction products, for example secondary electrons, backscattered electrons or primary particles, which for other reasons have experienced a movement reversal, which originate from the surface of the object 7 or from the first plane 101.
  • the interaction products emanating from the surface of the object 7 are shaped into secondary particle beams 9 by the objective lens 102.
  • the particle beam system 1 provides a particle beam path 11 in order to feed the multiplicity of secondary particle beams 9 to a detector system 200.
  • the detector system 200 comprises particle optics with a projection lens 205 in order to direct the secondary particle beams 9 onto a particle multi-detector 209.
  • the detail l 2 in FIG. 1 shows a top view of the plane 21 1 in which individual detection areas of the particle multi-detector 209 are located, on which the secondary particle beams 9 impinge at locations 213.
  • the points of impact 213 lie in a field 217 at a regular distance P2 from one another.
  • Exemplary values of the distance P 2 are 10 micrometers, 100 micrometers and 200 micrometers.
  • the primary particle beams 3 are generated in a beam generating device 300 which comprises at least one particle source 301 (e.g. an electron source), at least one collimation lens 303, a multi-aperture arrangement 305 and a field lens 307, or a field lens system composed of several field lenses.
  • the particle source 301 generates a diverging particle beam 309 which is collimated or at least largely collimated by the collimation lens 303 in order to form a beam 31 1 which illuminates the multi-aperture arrangement 305.
  • the detail I3 in FIG. 1 shows a top view of the multi-aperture arrangement 305.
  • the multi-aperture arrangement 305 comprises a multi-aperture plate 313 which has a plurality of openings or apertures 315 formed therein. Center points 317 of the openings 315 are arranged in a field 319 which is imaged onto the field 103 which is formed by the beam spots 5 in the object plane 101.
  • a distance P3 of the center points 317 of the apertures 315 from one another can have exemplary values of 5 micrometers, 100 micrometers and 200 micrometers.
  • the diameters D of the apertures 315 are smaller as the distance P3 of the centers of the apertures. Exemplary values for the diameter D are 0.2 x P 3 , 0.4 x P3 and 0.8 x P 3 .
  • Particles of the illuminating particle beam 311 pass through the apertures 315 and form particle beams 3. Particles of the illuminating beam 311 which strike the plate 313 are intercepted by the latter and do not contribute to the formation of the particle beams 3.
  • the multi-aperture arrangement 305 focuses each of the particle beams 3 due to an applied electrostatic field in such a way that beam foci 323 are formed in a plane 325.
  • the beam foci 323 can be virtual.
  • a diameter of the beam foci 323 can be, for example, 10 nanometers, 100 nanometers and 1 micrometer.
  • the field lens 307 and the objective lens 102 provide first imaging particle optics in order to image the plane 325 in which the beam foci 323 are formed onto the first plane 101 so that a field 103 of incidence locations 5 or beam spots is created there. If a surface of the object 7 is arranged in the first plane, the beam spots are correspondingly formed on the object surface.
  • the objective lens 102 and the projection lens arrangement 205 provide second imaging particle optics in order to image the first plane 101 onto the detection plane 211.
  • the objective lens 102 is thus a lens which is part of both the first and the second particle optics, while the field lens 307 only belongs to the first particle optics and the projection lens 205 only to the second particle optics.
  • a beam splitter 400 is arranged in the beam path of the first particle optics between the multi-aperture arrangement 305 and the objective lens system 100.
  • the beam switch 400 is also part of the second optics in the beam path between the objective lens system 100 and the detector system 200.
  • the multiple particle beam system also has a computer system 10 which is designed both to control the individual optical particle components of the multiple particle beam system and to evaluate and analyze the signals obtained with the multiple detector 209.
  • the computer system 10 can be constructed from several individual computers or components. It can also contain the control according to the invention.
  • the components of the particle beam system according to the invention can be integrated into this multitude of particle beam systems.
  • FIG. 2 schematically illustrates a current variation by means of condenser lenses according to the prior art.
  • a section from a particle beam system such as a multi-beam particle microscope is shown.
  • the system includes a particle source 301 which generates a diverging particle beam 309. This then hits a condenser lens system with two condenser lenses 330 and 331, which in the example shown are each magnetic condenser lenses.
  • the condenser lenses 330, 331 are indicated in Figure 2 by ellipses.
  • a wide ellipse means strong excitation of the magnetic lens, while a narrow ellipse means little or no excitation of the corresponding condenser lens.
  • the two condenser lenses 330 and 331 form the condenser lens system or collimation lens system 303, which was also shown in FIG. 1.
  • the illuminating particle beam 31 1 which hits the further particle-optical components and in particular the micro-optics after passing through the collimation lens system 303, is collimated.
  • the illuminating particle beam 311 first strikes a pre-multi-aperture plate 380, which serves to limit the current and which, when penetrated, form individual particle beams 3.
  • the individual particle beams 3 formed in this way then penetrate the other components of the micro-optics, here two micro-optic correctors 353 and 354 are shown as an example, which in the example shown are arranged in front of the heart of the micro-optics, namely the multi-aperture plate 351 and its counter-electrode 352.
  • the electric field varies as it passes through the multi-aperture plate 351 and the individual particle beams 3 are more or less strongly focused and torn apart.
  • the focused individual particle beams 3 then strike a field lens system 307, which is indicated in the example shown by a single field lens.
  • a control ensures that the condenser lens system with the condenser lenses 330 and 331 can be controlled in different ways. At this time, the condenser lenses 330 and 331 become different very excited.
  • the illuminating particle beam 31 1 is widened to a greater or lesser extent, which is indicated in FIG. 2 by the broad double arrows.
  • the characteristic of the actual particle source 301 is assumed to be unchangeable. This means that the total number of charged particles emitted by the particle source or the associated particle flow per unit of time is assumed to be constant. The different expansion of the illuminating particle beam 31 1 thus changes the beam current density, that is to say the number of charged particles per area and unit of time.
  • Fig. 2c) shows an illumination of the micro-optics with a low beam current density :
  • the first condenser lens 330 is practically not excited, whereas the second condenser lens 331 is very strongly excited.
  • the result is a greatly expanded illuminating particle beam 31 1 which strikes identical apertures in the pre-multi-aperture plate 380 and downstream elements of the micro-optics.
  • the current strength of the individual particle beams according to the configuration in FIG. 2c) is thus reduced.
  • a zoom factor of approximately 4X can be achieved, which enables a beam current variation of approximately a factor of 15.
  • the aperture diameter in the micro-optics here e.g. the aperture diameter of the pre-multi-aperture plate 380, in order to achieve lower beam currents.
  • the disadvantage of this is that the numerical aperture is also reduced and the resolution therefore deteriorates due to diffraction effects.
  • the particle source 301 there are also possible variations: If a smaller particle source is used, lower currents can generally be achieved. However, the exchange of the particle source (“tip”) requires service times, which are undesirable. Another starting point is the variation of the extractor potential, whereby a beam current variation by a factor of around 2 is possible. A variation in the extractor potential, however, leads to disadvantageous drifts in the beam current strength.
  • FIG. 3 shows schematically the illumination of a micro-optics 399 by means of a condenser lens system 303 according to the prior art:
  • the beam paths of the illuminating particle beam 311 and the individual particle beams 3 can be seen more clearly in FIG.
  • the illuminating particle beam 311 is in several trajectories shown. Parts of the illuminating particle beam 311 pass through the pre-multi-aperture plate 380, which in the example shown forms the first component of the micro-optics 399.
  • the portions of the illuminating particle beam 311 hit the pre-multi-aperture plate 380 telecentrically, which simplifies the subsequent penetration of the remaining particle-optical components of the micro-optics 399 and other components of the overall system (not shown).
  • the present invention enables the respective optimum of beam current and numerical aperture to be set independently and over large value ranges for optimum resolution, in particular in a simple manner and without making structural changes to the particle beam system.
  • the column height does not need to be changed significantly.
  • the present invention enables the jet current strength of each individual jet to be varied by more than a factor of 15, preferably more than a factor of 25, without having to lengthen the column height.
  • the beam current strength of each individual beam can be varied by more than a factor of 50, for example a factor of 100.
  • FIG. 4 now schematically shows an embodiment of the invention with convergent beam guidance according to the condenser lens system with the magnetic condenser lenses 330 and 331.
  • the illuminating beam 311a is convergent and a portion of charged particles arising from the same solid angle of the particle source 301 becomes, so to speak compressed, so that the beam current strength of a single particle beam formed from this solid angle increases.
  • the stronger the convergence the greater the beam current density.
  • pre-counter electrode 362 between the condenser lens 331 and the pre-multi-aperture plate 380, 361.
  • a control (not shown) is set up to supply adjustable voltages to the condenser lens system 330, 331 and the pre-counter electrode 362, that the charged particles telecentrically onto the pre-multi-aperture plate 361 can hit.
  • this telecentricity condition can be seen from the central individual particle beam or the associated beam trajectories.
  • the trajectories of the particle beams when they strike the pre-multi-aperture plate 361 are parallel.
  • the telecentric condition is also fulfilled outside the optical axis (eg upper trajectory), but this cannot be seen in the drawing because of the simplified schematic representation.
  • the desired effect of the telecentric impact is achieved in the present case by a combination of the global lens field, which is generated by the pre-counter electrode 362, with the local lens field of the pre-multi-aperture plate 361. Overall, this results in a focusing effect which is added to the focusing effect of the system combination of multi-lens array 351 and counter-electrode 352. In this way, the focal length of the micro-optics is also shortened, that is to say in FIG. 4 the foci 323 move further to the left in the direction of the optical axis Z.
  • the multi-lens array 350 and the pre-multi-lens array 360 according to the invention are constructed as mirror images of one another in FIG.
  • a combination or targeted control of the pre-multi-lens array 360 in combination with a correspondingly selected control of the condenser lens system 330, 331 enables the beam current strength to be set.
  • the beam current strength of the individual beams is increased, so that in addition to the increase in the beam current strength shown in Figure 2a by varying the condenser lenses 330, 331, a further increase in the beam current strength is achieved without the overall length of the condenser lens system or the column length to increase.
  • FIG. 4 illustrates an average beam current density with convergent radiation 31 1 a
  • FIG. 5 shows a small beam current density with divergent beam guidance 31 1 b.
  • the illustration in FIG. 5 is very schematic in such a way that both condenser lenses 330, 331 are only very weakly excited, so that in the simplified sketched illustration the divergent particle beam 309 is practically not deflected.
  • the divergent illuminating particle beam 311b passes through the pre-counterelectrode 362.
  • a different electrical potential is now applied to this pre-counterelectrode 362, so that, as a result of the selected settings, the particle beams again have a telecentric impingement on the pre -Multi-aperture plate 361 is reached.
  • the beam current recorded for each individual particle beam 3 is smaller.
  • the targeted control of the condenser lens system and in particular the condenser lens 331 in combination with A specially selected control of the pre-counterelectrode 362 thus also allows an individual setting of the beam current here, which in turn enables the targeted improvement of the resolution of the overall system.
  • the beam current strength of the individual beams is reduced, so that in addition with the lowering of the beam current strength shown in FIG. 2c by varying the condenser lenses 330, 331, a further reduction in the beam current strength is achieved without the overall length of the condenser lens system or the column length to increase.
  • a voltage of -30 kV is typically present at the emitter 301, provided that the emitter emits electrons.
  • the associated extractor 302 typically has 3 to 7 kV.
  • the micro-optics themselves are usually at earth potential, i.e. 0 kV.
  • the pre-counter electrode according to the invention is typically operated in the range of approximately + - 12 to + - 20 kV. This is therefore of the same order of magnitude as the voltage supply to the counter electrode 352 of the multi-lens array 350. Other voltage values are possible.
  • a controller is set up to supply adjustable voltages to the particle-optical components. For this purpose, it is particularly possible that charged particles can strike the pre-multi-aperture plate 361 telecentrically.
  • This control can be a central control which also controls the particle beam system as a whole, for example the controller or the computer system 10 which is shown in FIG. 1 of this patent application. It is possible that certain values for the control of the particle-optical components are stored in a look-up table.
  • the condenser lens system comprises a magnetic condenser lens 330 and an electrostatic condenser lens 332b arranged downstream. Their excitation is indicated by the double arrow.
  • a booster potential by means of the booster electrode 332 is applied between the two condenser lenses 330 and 332b.
  • the pre-multi-lens array 360 according to the invention with the pre-counterelectrode 362 and the pre-multi-aperture plate 361 is again arranged in the beam path after the electrostatic condenser lens 332b. With the electric field of the pre-counter electrode 362, the focal length of the pre-multi-lens Arrays 360 are set.
  • a variable electrostatic lens is formed which functions as a lower condenser lens 332b.
  • the beam current can be set with the corresponding condenser lenses 330 and 332b and the telecentric lighting condition can be established .
  • Fig. 8 schematically shows the embodiment of the invention shown in Fig. 7, supplemented by a pre-additional electrode 363.
  • This pre-additional electrode 363 can be used, for example, to correct a curvature of the field.
  • the electric field E changes with different settings of the pre-additional electrode 363, which leads to a focal length variation between the beams and thus to a "negative" field curvature of the beam array.
  • the telecentric condition of incidence on the pre-multi-aperture plate 361 can nevertheless be achieved by appropriate control of the condenser lens system 330, 332a and the pre-counterelectrode 362, the greater the effect on the resulting field curvature.
  • FIG. 9 shows schematically a multi-aperture plate system with two or more multi-aperture plates 386, 387 which can be displaced relative to one another for the purpose of beam current variation.
  • the multi-aperture plate system is designed to be slidable into the beam path, which already results from the fact that at least one of the multi-aperture plates 386, 387 is displaceable relative to the particle beam system or the particle beam generated therein.
  • a so-called slide-in aperture 399 can be arranged, for example, as shown in FIG.
  • the slide-in, beam-current-limiting multi-aperture plate system 385 is located between the pre-multi-lens array 360 and the multi-lens array 350 and thus between the pre - Multi-aperture plate 361 and the multi-aperture plate 351, preferably in front of the micro-optic correctors 354, 353 behind the pre-multi-aperture plate 361, but outside the multi-lens fields 398.
  • the relative displacement of the two multi-aperture plates 386 and 387 to one another can be achieved by appropriate mechanics and actuators, for example piezo actuators can be achieved.
  • the accuracy of the positioning of the multi-aperture plates 386, 387 is in the range of approximately one micrometer.
  • Fig. 9 is a side view at relative to each other offset multi-aperture plates 386 and 387 show how the illuminating beam 311 results in a single particle beam 3 of a defined diameter. The further the two plates 386, 387 are displaced relative to one another, the narrower the diameter of the individual particle beam 3 and the lower the current strength in the individual particle beam 3.
  • the openings of the multi-aperture plates 386, 387 which can be displaced relative to one another, can be essentially of the same size and have essentially the same geometric shape.
  • Figures 9b) and 9c) show two examples. According to FIG. 9b), the openings 386 387a are each round or circular. A so-called circle-delta 388 results, shifted relative to one another. This circle-delta can be approximated by an elliptical shape, which is why such a realization is preferably combined with a multistigmator in order to obtain circular beam cross-sections again.
  • the variant embodiment according to FIG. 9c) shows square openings 386a and 387a. The resulting opening 388 can also be square in this case, provided that the offset of the two multi-aperture plates 486 and 387 is selected and scaled accordingly.
  • FIG. 10 schematically shows a multi-aperture plate system with two sequentially arranged multi-aperture plates 390, 391 and a deflector system located between them for varying the beam current.
  • a double deflector is shown with the individual deflectors 392 and 393. These allow a parallel offset of the illuminating beam 311 impinging on the multi-aperture plate 393. If the deflector system 392, 393 is off and the two multi-aperture plates 390 and 391 are aligned accordingly, ie their respective openings are the same size and are centered on top of one another, the entire beam 311 passes through the multi-aperture plate system and a single particle beam 3 with a maximum particle beam diameter results.
  • the deflectors 392, 393 are switched on, the parallel offset of the particle beams takes place and the offset particle beam partially strikes the second multi-aperture plate 391 and only partially penetrates it. The result is a single particle beam 3 with a reduced diameter and an overall reduced current strength.
  • the variation of the single beam current intensity takes place via the variation of the excitation of the condenser lenses, as shown in FIGS. 2a to 2c, together with the variation of the openings of the multi-aperture plates 386 and 387 or two sequentially arranged multi-aperture plates 390, 391 and a deflector system located in between Beam current variation and a single beam current variation by a factor of more than 20, for example a factor 30 or a factor 50, is achieved without the column length of the Increase multi-beam particle microscope.
  • the individual beam current intensity is varied via the variation in the excitation of the condenser lenses, as shown in FIGS.
  • Fig. 11 shows schematically different apertures for beam current variation, which can be used, for example, in the described beam current-limiting multi-aperture plate system.
  • 1 1a) initially shows a circular beam cross section 710. If the beam current strength is reduced by means of an aperture, this can be done according to FIG. 11a) by means of a circular opening.
  • the current limitation in the case of the smaller aperture 711 reduces the individual beam aperture, which leads to a reduced resolution.
  • the arrangement from FIG. 11 b) offers a better solution:
  • the current is limited with the same maximum opening diameter through the annular aperture 712.
  • the central shading diaphragm is held by fine, mechanical connections. The lateral resolution is retained when using the annular aperture.
  • 11c shows an aperture with two annular apertures.
  • the central shading screen and the annular screen are in turn held by webs 115.
  • the aperture shown is also referred to as a Toraldo filter. It achieves a diffraction maximum similar to that of an annular opening, but less high secondary maxima compared with a single annular aperture.
  • annular apertures in particular a system of at least two annular apertures arranged one inside the other, enables a further reduction of the individual beam currents with constant numerical aperture and thus constant resolution, without increasing the column length of the multi-beam particle microscope.
  • a constant resolution can in particular be ensured by digital image processing downstream of the imaging, for example a deconvolution operation of the obtained raw image data with the convolution core according to the diffraction image of the annular apertures, in particular the system of at least two annular apertures arranged one inside the other.
  • 12 shows, schematically and in a greatly simplified manner, a multi-beam particle microscope 1 with particle-optical components for setting an optimal resolution.
  • the pre-multi-lens array 360 comprises the pre-counter electrode 362 and the pre-multi-aperture plate 361.
  • the multi-lens array 350 comprises the multi-aperture plate 351 and the counter-electrode 352.
  • the pre-counter-electrode 362 and the counter-electrode 352 are controlled via the controller (not shown) controlled and fed with corresponding potentials.
  • the current strength of the individual particle beams 3 can be varied, as described in more detail above, by means of appropriate control.
  • the focal length or the position of the foci 323, 323a in the intermediate image plane E1 is varied. This changes both the distance between the foci in the intermediate image plane E1 and - with appropriate control of the particle-optical components - the position of the plane E1 in relation to the optical axis Z of the system (not shown).
  • the foci 323, 323a in the intermediate image plane E1 can be understood as multiple images of the particle source 301.
  • the solid lines illustrate a particle beam 3, the dash-dotted line, however, a particle beam 3a with changed setting conditions of the counter electrode 352.
  • the changed focus position in the intermediate image plane E1 is indicated by the stars 323a - compared to the circles 323.
  • the intermediate image plane E1 there is a field lens system 307 consisting of three field lenses as well as a beam switch 400 and a particularly magnetic objective lens 102 here.
  • the charged individual particle beams 3 are thereby imaged particle-optically from the intermediate image plane E1 onto the object plane E2.
  • the numerical aperture of the individual particle beams when they strike the object plane E2 can be changed , whereby it is possible to keep the distance between the individual particle beams (pitch 2) in the object plane E2 constant.
  • This additional condition, keeping the pitch 2 constant in the object plane E2 can be achieved by the Provide an additional field lens 370, which is arranged in the example shown between the intermediate image plane E1 and the field lens system 307 consisting of three field lenses.
  • the other particle-optical parameters such as focus, rotation and / or telecentricity in the object plane can also be kept constant.
  • the secondary particle beams 9 released from a sample 7 then pass through a projection lens 205, a diaphragm 210 and finally hit a particle multi-detector 209.
  • the multi-beam particle microscope 1 shown allows a comprehensive improvement and, if necessary, optimization of the resolution in the particle-optical imaging due to two additional global particle-optical components.
  • a specific control of the condenser lens system 303 in combination with a specific control of the pre-counter electrode 362 enables a specific setting of the current strength of the individual particle beams.
  • the telecentricity condition, which is advantageous and possibly required for the subsequent particle-optical imaging, when it hits the micro-optics or, here in simplified form, the pre-multi-aperture plate 361 can be achieved.
  • a targeted control of the counter electrode 352 in combination with the additional field lens 370 enables a change in the numerical aperture in the object plane E2 without changing the pitch 2 in the object plane.
  • the additional field lens 370 thus represents a particle-optical variation component and brings the additional degree of freedom into the system in order to enable this detailed adjustment.
  • the targeted control of the counterelectrode 352 in combination with the additional field lens 370 enables at least an approximately constant keeping of the numerical aperture of the individual beams in combination with the variation of the openings of the multi-aperture plates 386 and 387 according to one of the exemplary embodiments according to FIG. 9 or two sequentially arranged Multi-aperture plates 390, 391 and a deflector system located between them according to the exemplary embodiment according to FIG or even 100, the column length of the multi-beam particle microscope being constant and less than 1.5 m, preferably less than 1 m, and the resolution of each individual beam remaining approximately constant when the beam current strength changes. It is possible to combine the multi-beam particle microscope shown with other particle-optical components. In this respect, the embodiment shown is only to be understood as an example.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electron Beam Exposure (AREA)

Abstract

L'invention concerne un système de faisceau de particules et, en particulier, un microscope à particules à faisceaux multiples, dans lequel une intensité de courant de faisceaux de particules individuels peut être ajustée de manière flexible sur de larges plages de valeurs sans modifications structurales. Le système de faisceau de particules selon l'invention comprend un système de lentille de condenseur, un réseau pré-multi-lentilles ayant une pré-contre-électrode spécifique et une plaque pré-multi-ouvertures, et un réseau multi-lentilles. Le système comprend un dispositif de commande, qui est conçu pour fournir des excitations réglables au système de lentille de condenseur et à la pré-contre-électrode de telle sorte que les particules chargées peuvent venir frapper de manière télécentrique la plaque de pré-ouverture multiple.
EP20740177.9A 2019-07-31 2020-05-23 Système de faisceau de particules et son utilisation pour ajuster de manière flexible l'intensité de courant de faisceaux de particules individuels Pending EP4004962A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102019005362.1A DE102019005362A1 (de) 2019-07-31 2019-07-31 Verfahren zum Betreiben eines Vielzahl-Teilchenstrahlsystems unter Veränderung der numerischen Apertur, zugehöriges Computerprogrammprodukt und Vielzahl-Teilchenstrahlsystem
PCT/DE2020/000101 WO2021018327A1 (fr) 2019-07-31 2020-05-23 Système de faisceau de particules et son utilisation pour ajuster de manière flexible l'intensité de courant de faisceaux de particules individuels

Publications (1)

Publication Number Publication Date
EP4004962A1 true EP4004962A1 (fr) 2022-06-01

Family

ID=71614615

Family Applications (1)

Application Number Title Priority Date Filing Date
EP20740177.9A Pending EP4004962A1 (fr) 2019-07-31 2020-05-23 Système de faisceau de particules et son utilisation pour ajuster de manière flexible l'intensité de courant de faisceaux de particules individuels

Country Status (8)

Country Link
US (3) US12057290B2 (fr)
EP (1) EP4004962A1 (fr)
JP (1) JP7319456B2 (fr)
KR (1) KR102790176B1 (fr)
CN (2) CN114503237B (fr)
DE (1) DE102019005362A1 (fr)
TW (2) TWI743892B (fr)
WO (2) WO2021018327A1 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102019005362A1 (de) 2019-07-31 2021-02-04 Carl Zeiss Multisem Gmbh Verfahren zum Betreiben eines Vielzahl-Teilchenstrahlsystems unter Veränderung der numerischen Apertur, zugehöriges Computerprogrammprodukt und Vielzahl-Teilchenstrahlsystem
JP7354037B2 (ja) * 2020-03-23 2023-10-02 株式会社日立ハイテクサイエンス 集束イオンビーム加工装置
DE102021118561B4 (de) * 2021-07-19 2023-03-30 Carl Zeiss Multisem Gmbh Verfahren zum Betreiben eines Vielstrahl-Teilchenmikroskopes mit schneller Strahlstromregelung, Computerprogrammprodukt und Vielstrahl-Teilchenmikroskop
WO2023016678A1 (fr) * 2021-08-10 2023-02-16 Carl Zeiss Multisem Gmbh Unité de génération de faisceaux multiples à puissance de focalisation accrue
DE102021122390B3 (de) * 2021-08-30 2023-01-26 Carl Zeiss Microscopy Gmbh Teilchenstrahlgerät, Verfahren zum Betreiben des Teilchenstrahlgeräts und Computerprogrammprodukt
US11651934B2 (en) * 2021-09-30 2023-05-16 Kla Corporation Systems and methods of creating multiple electron beams
US12165831B2 (en) * 2022-05-31 2024-12-10 Kla Corporation Method and system of image-forming multi-electron beams
CN119404277A (zh) * 2022-06-23 2025-02-07 卡尔蔡司MultiSEM有限责任公司 多束系统与具有减小的对二次辐射的敏感度的多束形成单元
TWI902164B (zh) 2023-03-14 2025-10-21 德商卡爾蔡司多重掃描電子顯微鏡有限公司 掃描電子顯微鏡的成像參數之監控的方法、程式碼、與控制系統
DE102023119451B4 (de) 2023-07-24 2025-02-13 Carl Zeiss Multisem Gmbh Vielstrahl-Teilchenstrahlsystem mit elektrostatischer Boosterlinse, Verfahren zum Betreiben eines Vielstrahl-Teilchenstrahlsystems und zugehöriges Computerprogrammprodukt
DE102024118682A1 (de) * 2023-08-07 2025-02-13 Olympus Winter & Ibe Gmbh Umkehrsatz für ein chirurgisches Instrument
DE102023126251B4 (de) * 2023-09-27 2025-04-10 Carl Zeiss Multisem Gmbh Verfahren zum Betreiben eines Vielzahl-Teilchenstrahlsystems, Computerprogrammprodukt und Vielzahl-Teilchenstrahlsystem mit gesteigerter Performance
DE102024119459B3 (de) 2024-07-09 2026-01-15 Carl Zeiss Multisem Gmbh Strahlerzeugungsvorrichtung für ein Vielzahl-Teilchenstrahlsystem und Vielzahl-Teilchenstrahlsystem

Family Cites Families (142)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52119178A (en) 1976-03-31 1977-10-06 Toshiba Corp Electron beam exposure device
CA1100237A (fr) 1977-03-23 1981-04-28 Roger F.W. Pease Traduction non-disponible
US4200794A (en) 1978-11-08 1980-04-29 Control Data Corporation Micro lens array and micro deflector assembly for fly's eye electron beam tubes using silicon components and techniques of fabrication and assembly
US4338548A (en) 1980-01-30 1982-07-06 Control Data Corporation Unipotential lens assembly for charged particle beam tubes and method for applying correction potentials thereto
JPS57130354A (en) * 1981-02-04 1982-08-12 Toshiba Corp Electronic optical bodytube
JPS59184524A (ja) 1983-04-04 1984-10-19 Nippon Telegr & Teleph Corp <Ntt> 電子ビ−ム露光装置
JPS6042825A (ja) 1983-08-19 1985-03-07 Nippon Telegr & Teleph Corp <Ntt> 荷電ビ−ム露光装置
JPS60105229A (ja) 1983-11-14 1985-06-10 Nippon Telegr & Teleph Corp <Ntt> 荷電ビ−ム露光装置
JPH0789530B2 (ja) 1985-05-17 1995-09-27 日本電信電話株式会社 荷電ビ−ム露光装置
US4742234A (en) 1985-09-27 1988-05-03 American Telephone And Telegraph Company, At&T Bell Laboratories Charged-particle-beam lithography
JP2523931B2 (ja) 1990-04-16 1996-08-14 富士通株式会社 ブランキングアパ―チャアレ―の製造方法
JPH08138611A (ja) * 1994-11-04 1996-05-31 Nikon Corp 荷電粒子線装置
EP1369896A3 (fr) 1996-03-04 2004-12-22 Canon Kabushiki Kaisha Appareil d'exposition à faisceau d'électrons et procédé et dispositif de fabrication
US5892224A (en) 1996-05-13 1999-04-06 Nikon Corporation Apparatus and methods for inspecting wafers and masks using multiple charged-particle beams
JP3796317B2 (ja) 1996-06-12 2006-07-12 キヤノン株式会社 電子ビーム露光方法及びそれを用いたデバイス製造方法
JP3728015B2 (ja) 1996-06-12 2005-12-21 キヤノン株式会社 電子ビーム露光システム及びそれを用いたデバイス製造方法
JP3927620B2 (ja) 1996-06-12 2007-06-13 キヤノン株式会社 電子ビーム露光方法及びそれを用いたデバイス製造方法
US5981954A (en) 1997-01-16 1999-11-09 Canon Kabushiki Kaisha Electron beam exposure apparatus
US6107636A (en) 1997-02-07 2000-08-22 Canon Kabushiki Kaisha Electron beam exposure apparatus and its control method
JP3787417B2 (ja) 1997-06-11 2006-06-21 キヤノン株式会社 電子ビーム露光方法及び電子ビーム露光装置
US6014200A (en) * 1998-02-24 2000-01-11 Nikon Corporation High throughput electron beam lithography system
JP2001052997A (ja) * 1999-08-17 2001-02-23 Nikon Corp 荷電粒子線露光装置及び半導体装置の製造方法
US6333508B1 (en) 1999-10-07 2001-12-25 Lucent Technologies, Inc. Illumination system for electron beam lithography tool
JP3763446B2 (ja) 1999-10-18 2006-04-05 キヤノン株式会社 静電レンズ、電子ビーム描画装置、荷電ビーム応用装置、および、デバイス製造方法
JP4585661B2 (ja) 2000-03-31 2010-11-24 キヤノン株式会社 電子光学系アレイ、荷電粒子線露光装置およびデバイス製造方法
JP4947841B2 (ja) 2000-03-31 2012-06-06 キヤノン株式会社 荷電粒子線露光装置
JP2001284230A (ja) 2000-03-31 2001-10-12 Canon Inc 電子光学系アレイ、これを用いた荷電粒子線露光装置ならびにデバイス製造方法
US6787780B2 (en) 2000-04-04 2004-09-07 Advantest Corporation Multi-beam exposure apparatus using a multi-axis electron lens, fabrication method of a semiconductor device
EP1150327B1 (fr) 2000-04-27 2018-02-14 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Dispositif multi-faisceaux de particules chargées
TWI297167B (en) 2000-06-27 2008-05-21 Ebara Corp Inspection apparatus and inspection method
EP2587515A1 (fr) 2000-06-27 2013-05-01 Ebara Corporation Système d'inspection par faisceau de particules chargées et procédé de fabrication de dispositifs utilisant ledit système
DE60134922D1 (de) 2000-08-14 2008-09-04 Elith Llc Lithographischer Apparat
EP1271604A4 (fr) 2001-01-10 2005-05-25 Ebara Corp Appareil et procede d'inspection a faisceau d'electrons, et procede de fabrication de dispositif comportant l'appareil d'inspection
JP4246401B2 (ja) 2001-01-18 2009-04-02 株式会社アドバンテスト 電子ビーム露光装置及び電子ビーム偏向装置
JP4647820B2 (ja) 2001-04-23 2011-03-09 キヤノン株式会社 荷電粒子線描画装置、および、デバイスの製造方法
JP4756776B2 (ja) 2001-05-25 2011-08-24 キヤノン株式会社 荷電粒子線露光装置、荷電粒子線露光方法およびデバイス製造方法
DE10127217B4 (de) 2001-06-05 2005-09-15 Infineon Technologies Ag Verfahren zur Herstellung lagegenauer großflächiger Membranmasken
DE10138882B4 (de) 2001-08-08 2005-09-08 Infineon Technologies Ag Großflächige Membranmaske und Verfahren zu ihrer Herstellung
US6818911B2 (en) 2002-04-10 2004-11-16 Canon Kabushiki Kaisha Array structure and method of manufacturing the same, charged particle beam exposure apparatus, and device manufacturing method
JP4025613B2 (ja) 2002-09-27 2007-12-26 株式会社アドバンテスト 電子ビーム露光装置、電子ビーム露光装置校正方法、及び半導体素子製造方法
JP4220209B2 (ja) 2002-09-27 2009-02-04 株式会社アドバンテスト 電子ビーム露光装置、偏向装置、及び電子ビーム露光方法
US6953938B2 (en) 2002-10-03 2005-10-11 Canon Kabushiki Kaisha Deflector, method of manufacturing deflector, and charged particle beam exposure apparatus
US7015467B2 (en) 2002-10-10 2006-03-21 Applied Materials, Inc. Generating electrons with an activated photocathode
CN101414534B (zh) 2002-10-30 2012-10-03 迈普尔平版印刷Ip有限公司 电子束曝光系统
JP2004282038A (ja) 2003-02-28 2004-10-07 Canon Inc 偏向器、偏向器を製造する方法、偏向器を適用した荷電粒子線露光装置
KR101068607B1 (ko) 2003-03-10 2011-09-30 마퍼 리쏘그라피 아이피 비.브이. 복수 개의 빔렛 발생 장치
US7138629B2 (en) * 2003-04-22 2006-11-21 Ebara Corporation Testing apparatus using charged particles and device manufacturing method using the testing apparatus
JP4459568B2 (ja) 2003-08-06 2010-04-28 キヤノン株式会社 マルチ荷電ビームレンズおよびそれを用いた荷電ビーム露光装置
CN102709143B (zh) 2003-09-05 2016-03-09 卡尔蔡司Smt有限责任公司 电子光学排布结构、多电子分束检验系统和方法
GB2408383B (en) 2003-10-28 2006-05-10 Ims Nanofabrication Gmbh Pattern-definition device for maskless particle-beam exposure apparatus
WO2005074002A2 (fr) 2004-01-29 2005-08-11 Applied Materials Israel, Ltd. Systeme et procede de focalisation pour systeme d'imagerie de particules chargees
JP2005302868A (ja) * 2004-04-08 2005-10-27 Jeol Ltd 電子ビーム描画方法および装置
US7326901B2 (en) 2004-04-15 2008-02-05 Applied Materials, Israel, Ltd. High throughput multi beam system and method
US7420164B2 (en) 2004-05-26 2008-09-02 Ebara Corporation Objective lens, electron beam system and method of inspecting defect
US7285779B2 (en) 2004-06-21 2007-10-23 Applied Materials Israel, Ltd. Methods of scanning an object that includes multiple regions of interest using an array of scanning beams
US7375326B2 (en) 2004-06-21 2008-05-20 Applied Materials, Israel, Ltd. Method and system for focusing a charged particle beam
JP3800343B2 (ja) * 2004-09-09 2006-07-26 株式会社日立ハイテクノロジーズ 荷電粒子ビーム露光装置
JP3929459B2 (ja) * 2004-11-11 2007-06-13 株式会社日立ハイテクノロジーズ 荷電粒子線露光装置
US7468507B2 (en) 2005-01-26 2008-12-23 Applied Materials, Israel, Ltd. Optical spot grid array scanning system
TWI415162B (zh) 2005-03-03 2013-11-11 Toshiba Kk 映像投影型電子線裝置及使用該裝置之缺陷檢查系統
US20090014649A1 (en) 2005-03-22 2009-01-15 Ebara Corporation Electron beam apparatus
JP5663717B2 (ja) * 2005-09-06 2015-02-04 カール ツァイス マイクロスコピー ゲーエムベーハーＣａｒｌ Ｚｅｉｓｓ Ｍｉｃｒｏｓｃｏｐｙ Ｇｍｂｈ 荷電粒子システム
CN102103966B (zh) 2005-11-28 2013-02-06 卡尔蔡司Smt有限责任公司 粒子光学组件
US7504622B2 (en) 2006-04-03 2009-03-17 Applied Materials, Israel, Ltd. High throughput multi beam detection system and method
US8134135B2 (en) 2006-07-25 2012-03-13 Mapper Lithography Ip B.V. Multiple beam charged particle optical system
JP2010519697A (ja) 2007-02-22 2010-06-03 アプライド マテリアルズ イスラエル リミテッド 高スループットｓｅｍツール
EP2019415B1 (fr) * 2007-07-24 2016-05-11 IMS Nanofabrication AG Source multifaisceaux
US8350214B2 (en) 2009-01-15 2013-01-08 Hitachi High-Technologies Corporation Charged particle beam applied apparatus
EP2494579B1 (fr) 2009-10-26 2017-08-02 Mapper Lithography IP B.V. Système de lithographie à multiples petits faisceaux de particules chargées, dispositif de modulation et procédé de fabrication de celui-ci
US8946632B2 (en) 2009-11-10 2015-02-03 New Jersey Institute Of Technology System and method for terahertz 2D interferometric and synthetic aperture imaging with an incoherent source
US9336981B2 (en) 2010-04-09 2016-05-10 Applied Materials Israel Ltd. Charged particle detection system and multi-beamlet inspection system
DE102010026169B4 (de) 2010-07-06 2014-09-04 Carl Zeiss Microscopy Gmbh Partikelstrahlsystem
WO2012041464A1 (fr) 2010-09-28 2012-04-05 Applied Materials Israel Ltd. Systèmes et dispositifs optiques à particules et composants optiques à particules pour de tels systèmes et dispositifs
JP5709465B2 (ja) * 2010-10-29 2015-04-30 キヤノン株式会社 描画装置、および、物品の製造方法
WO2012062932A1 (fr) * 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Système de lithographie à particules chargées doté d'une chambre intermédiaire
JP5683227B2 (ja) 2010-11-19 2015-03-11 キヤノン株式会社 電子ビーム描画装置、およびそれを用いた物品の製造方法
CN103688333B (zh) 2011-02-18 2016-10-19 应用材料以色列公司 聚焦带电粒子成像系统
JP2012195097A (ja) 2011-03-15 2012-10-11 Canon Inc 荷電粒子線レンズおよびそれを用いた露光装置
US8362425B2 (en) 2011-03-23 2013-01-29 Kla-Tencor Corporation Multiple-beam system for high-speed electron-beam inspection
NL2007604C2 (en) 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
WO2012151288A1 (fr) 2011-05-03 2012-11-08 Applied Materials Israel, Ltd. Optique de collecte à faisceaux multiples
JP5822535B2 (ja) 2011-05-16 2015-11-24 キヤノン株式会社 描画装置、および、物品の製造方法
NL2006868C2 (en) * 2011-05-30 2012-12-03 Mapper Lithography Ip Bv Charged particle multi-beamlet apparatus.
JP2013004216A (ja) 2011-06-14 2013-01-07 Canon Inc 荷電粒子線レンズ
GB2494118A (en) 2011-08-28 2013-03-06 Applied Materials Israel Ltd Test object for testing an array of beams
CN107359101B (zh) * 2012-05-14 2019-07-12 Asml荷兰有限公司 带电粒子射束产生器中的高电压屏蔽和冷却
JP2013239667A (ja) 2012-05-17 2013-11-28 Canon Inc 荷電粒子線静電レンズにおける電極とその製造方法、荷電粒子線静電レンズ、及び荷電粒子線露光装置
JP2013251225A (ja) * 2012-06-04 2013-12-12 Jeol Ltd 荷電粒子ビームの軸合わせ方法および荷電粒子ビーム装置
JP2014007261A (ja) 2012-06-22 2014-01-16 Canon Inc 静電偏向器、描画装置およびデバイスの製造方法
JP2014007013A (ja) 2012-06-22 2014-01-16 Canon Inc 静電レンズアレイ、マルチ荷電粒子光学系、及びフォーカス調整方法
CN104919272B (zh) * 2012-10-29 2018-08-03 7D外科有限公司 集成照明及光学表面拓扑检测系统及其使用方法
JP2014229481A (ja) 2013-05-22 2014-12-08 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置
WO2015024881A1 (fr) 2013-08-20 2015-02-26 Bang & Olufsen A/S Système et procédé de génération de son
DE102013014976A1 (de) 2013-09-09 2015-03-12 Carl Zeiss Microscopy Gmbh Teilchenoptisches System
DE102013016113B4 (de) 2013-09-26 2018-11-29 Carl Zeiss Microscopy Gmbh Verfahren zum Detektieren von Elektronen, Elektronendetektor und Inspektionssystem
GB2519511A (en) 2013-09-27 2015-04-29 Zeiss Carl Microscopy Gmbh Particle optical system having a liner tube and/or compensating coils
US9263233B2 (en) 2013-09-29 2016-02-16 Carl Zeiss Microscopy Gmbh Charged particle multi-beam inspection system and method of operating the same
CN105765691B (zh) 2013-09-30 2018-02-02 卡尔蔡司显微镜有限责任公司 带电粒子束系统和操作带电粒子束系统的方法
GB2521819A (en) 2013-11-22 2015-07-08 Zeiss Carl Microscopy Gmbh Particle optical arrangement for a charged particle optical system
JP6262024B2 (ja) * 2014-03-04 2018-01-17 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置
NL2012780B1 (en) 2014-05-08 2016-02-23 Univ Delft Tech Apparatus and method for inspecting a sample using a plurality of charged particle beams.
DE102014008105B4 (de) * 2014-05-30 2021-11-11 Carl Zeiss Multisem Gmbh Mehrstrahl-Teilchenmikroskop
DE102014008083B9 (de) 2014-05-30 2018-03-22 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem
DE102014008383B9 (de) * 2014-06-06 2018-03-22 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem und Verfahren zum Betreiben einer Teilchenoptik
NL2013411B1 (en) * 2014-09-04 2016-09-27 Univ Delft Tech Multi electron beam inspection apparatus.
JP2016115680A (ja) * 2014-12-17 2016-06-23 アプライド マテリアルズ イスラエル リミテッド 収差補正開孔を有する走査型荷電粒子ビームデバイスおよびその動作方法
DE102015202172B4 (de) * 2015-02-06 2017-01-19 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem und Verfahren zur teilchenoptischen Untersuchung eines Objekts
US9691588B2 (en) 2015-03-10 2017-06-27 Hermes Microvision, Inc. Apparatus of plural charged-particle beams
EP3082150B1 (fr) * 2015-04-15 2017-07-19 FEI Company Procédé et microscope à particules chargées à balayage en transmission pour imagerie tomographique
US9607805B2 (en) 2015-05-12 2017-03-28 Hermes Microvision Inc. Apparatus of plural charged-particle beams
US9922799B2 (en) * 2015-07-21 2018-03-20 Hermes Microvision, Inc. Apparatus of plural charged-particle beams
KR20240042242A (ko) * 2015-07-22 2024-04-01 에이에스엠엘 네델란즈 비.브이. 복수의 하전 입자 빔을 이용하는 장치
US10366862B2 (en) * 2015-09-21 2019-07-30 KLA-Tencor Corporaton Method and system for noise mitigation in a multi-beam scanning electron microscopy system
DE102015013698B9 (de) 2015-10-22 2017-12-21 Carl Zeiss Microscopy Gmbh Verfahren zum Betreiben eines Vielstrahl-Teilchenmikroskops
IL259602B (en) 2015-11-30 2022-07-01 Hermes Microvision Inc Apparatus of plural charged-particle beams
CN108885187B (zh) 2016-01-27 2021-05-25 Asml 荷兰有限公司 多个带电粒子束的装置
JP6727021B2 (ja) * 2016-04-26 2020-07-22 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム照射装置、マルチ荷電粒子ビームの照射方法及びマルチ荷電粒子ビームの調整方法
CZ306807B6 (cs) * 2016-05-21 2017-07-12 Tescan Brno, S.R.O. Rastrovací elektronový mikroskop a způsob jeho provozu
DE102016120902B4 (de) * 2016-11-02 2018-08-23 Carl Zeiss Microscopy Gmbh Vielstrahl-Teilchenmikroskop
US10453645B2 (en) * 2016-12-01 2019-10-22 Applied Materials Israel Ltd. Method for inspecting a specimen and charged particle multi-beam device
CN110352469B (zh) 2016-12-30 2023-05-02 Asml荷兰有限公司 使用多个带电粒子射束的装置
KR102520386B1 (ko) 2017-03-20 2023-04-11 칼 짜이스 마이크로스카피 게엠베하 하전 입자 빔 시스템 및 방법
US10176965B1 (en) * 2017-07-05 2019-01-08 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Aberration-corrected multibeam source, charged particle beam device and method of imaging or illuminating a specimen with an array of primary charged particle beamlets
JP6972312B2 (ja) * 2017-09-19 2021-11-24 エーエスエムエル ネザーランズ ビー．ブイ． 荷電粒子ビーム装置及びその装置を動作させるシステム及び方法
DE102018202421B3 (de) 2018-02-16 2019-07-11 Carl Zeiss Microscopy Gmbh Vielstrahl-Teilchenstrahlsystem
DE102018202428B3 (de) 2018-02-16 2019-05-09 Carl Zeiss Microscopy Gmbh Vielstrahl-Teilchenmikroskop
CN112055886A (zh) 2018-02-27 2020-12-08 卡尔蔡司MultiSEM有限责任公司 带电粒子多束系统及方法
US10811215B2 (en) 2018-05-21 2020-10-20 Carl Zeiss Multisem Gmbh Charged particle beam system
US10593509B2 (en) * 2018-07-17 2020-03-17 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device
JP7030663B2 (ja) 2018-09-12 2022-03-07 株式会社東芝 半導体装置及び荷電粒子線露光装置
DE102018007455B4 (de) 2018-09-21 2020-07-09 Carl Zeiss Multisem Gmbh Verfahren zum Detektorabgleich bei der Abbildung von Objekten mittels eines Mehrstrahl-Teilchenmikroskops, System sowie Computerprogrammprodukt
DE102018007652B4 (de) 2018-09-27 2021-03-25 Carl Zeiss Multisem Gmbh Teilchenstrahl-System sowie Verfahren zur Stromregulierung von Einzel-Teilchenstrahlen
DE102018124044B3 (de) 2018-09-28 2020-02-06 Carl Zeiss Microscopy Gmbh Verfahren zum Betreiben eines Vielstrahl-Teilchenstrahlmikroskops und Vielstrahl-Teilchenstrahlsystem
DE102018124219A1 (de) 2018-10-01 2020-04-02 Carl Zeiss Microscopy Gmbh Vielstrahl-Teilchenstrahlsystem und Verfahren zum Betreiben eines solchen
DE102018133703B4 (de) 2018-12-29 2020-08-06 Carl Zeiss Multisem Gmbh Vorrichtung zur Erzeugung einer Vielzahl von Teilchenstrahlen und Vielstrahl-Teilchenstrahlsysteme
TWI743626B (zh) 2019-01-24 2021-10-21 德商卡爾蔡司多重掃描電子顯微鏡有限公司 包含多束粒子顯微鏡的系統、對3d樣本逐層成像之方法及電腦程式產品
CN111477530B (zh) 2019-01-24 2023-05-05 卡尔蔡司MultiSEM有限责任公司 利用多束粒子显微镜对3d样本成像的方法
US10741355B1 (en) 2019-02-04 2020-08-11 Carl Zeiss Multisem Gmbh Multi-beam charged particle system
DE102019004124B4 (de) 2019-06-13 2024-03-21 Carl Zeiss Multisem Gmbh Teilchenstrahl-System zur azimutalen Ablenkung von Einzel-Teilchenstrahlen sowie seine Verwendung und Verfahren zur Azimut-Korrektur bei einem Teilchenstrahl-System
DE102019005362A1 (de) 2019-07-31 2021-02-04 Carl Zeiss Multisem Gmbh Verfahren zum Betreiben eines Vielzahl-Teilchenstrahlsystems unter Veränderung der numerischen Apertur, zugehöriges Computerprogrammprodukt und Vielzahl-Teilchenstrahlsystem
DE102019005364B3 (de) 2019-07-31 2020-10-08 Carl Zeiss Multisem Gmbh System-Kombination eines Teilchenstrahlsystem und eines lichtoptischen Systems mit kollinearer Strahlführung sowie Verwendung der System-Kombination
DE102020107738B3 (de) 2020-03-20 2021-01-14 Carl Zeiss Multisem Gmbh Teilchenstrahl-System mit einer Multipol-Linsen-Sequenz zur unabhängigen Fokussierung einer Vielzahl von Einzel-Teilchenstrahlen, seine Verwendung und zugehöriges Verfahren

Also Published As

Publication number Publication date
CN114503237A (zh) 2022-05-13
TW202123286A (zh) 2021-06-16
US12119204B2 (en) 2024-10-15
KR102790176B1 (ko) 2025-04-04
US20220139665A1 (en) 2022-05-05
TWI743892B (zh) 2021-10-21
US20220130640A1 (en) 2022-04-28
KR20220038748A (ko) 2022-03-29
TW202121470A (zh) 2021-06-01
JP2022542692A (ja) 2022-10-06
WO2021018332A1 (fr) 2021-02-04
JP7319456B2 (ja) 2023-08-01
WO2021018327A1 (fr) 2021-02-04
DE102019005362A1 (de) 2021-02-04
CN114503237B (zh) 2025-09-30
US12057290B2 (en) 2024-08-06
US20240347316A1 (en) 2024-10-17
CN114600221A (zh) 2022-06-07
TWI766322B (zh) 2022-06-01

Similar Documents

Publication Publication Date Title
EP4004962A1 (fr) Système de faisceau de particules et son utilisation pour ajuster de manière flexible l&#39;intensité de courant de faisceaux de particules individuels
DE102018007652B4 (de) Teilchenstrahl-System sowie Verfahren zur Stromregulierung von Einzel-Teilchenstrahlen
DE102019004124B4 (de) Teilchenstrahl-System zur azimutalen Ablenkung von Einzel-Teilchenstrahlen sowie seine Verwendung und Verfahren zur Azimut-Korrektur bei einem Teilchenstrahl-System
DE102018133703B4 (de) Vorrichtung zur Erzeugung einer Vielzahl von Teilchenstrahlen und Vielstrahl-Teilchenstrahlsysteme
DE102020125534B3 (de) Vielzahl-Teilchenstrahlmikroskop und zugehöriges Verfahren mit schnellem Autofokus um einen einstellbaren Arbeitsabstand
DE102015013698B9 (de) Verfahren zum Betreiben eines Vielstrahl-Teilchenmikroskops
DE102020107738B3 (de) Teilchenstrahl-System mit einer Multipol-Linsen-Sequenz zur unabhängigen Fokussierung einer Vielzahl von Einzel-Teilchenstrahlen, seine Verwendung und zugehöriges Verfahren
DE102020123567B4 (de) Vielzahl-Teilchenstrahl-System mit Kontrast-Korrektur-Linsen-System
DE102019008249B3 (de) Teilchenstrahl-System mit einer Multistrahl-Ablenkeinrichtung und einem Strahlfänger, Verfahren zum Betreiben des Teilchenstrahl-Systems und zugehöriges Computerprogrammprodukt
DE102021105201B4 (de) Vielzahl-Teilchenstrahlmikroskop und zugehöriges Verfahren mit schnellem Autofokus mit speziellen Ausführungen
DE69920182T2 (de) Korpuskularstrahloptisches gerät mit auger-elektronendetektion
EP3811394A2 (fr) Système à faisceau de particules
EP1389794B1 (fr) Système de guidage de faisceau, procédé d&#39;imagerie et système de microscopie électronique
EP3712924A1 (fr) Dispositif et procédé de transfert d&#39;électrons d&#39;un échantillon à un analyseur d&#39;énergie et dispositif spectromètre d&#39;électrons
DE102021118561A1 (de) Verfahren zum Betreiben eines Vielstrahl-Teilchenmikroskopes mit schneller Strahlstromregelung, Computerprogrammprodukt und Vielstrahl-Teilchenmikroskop
DE3933317A1 (de) Saeule zur erzeugung eines fokussierten ionenstrahls
EP0603555B1 (fr) Procédé d&#39;illumination par un faisceau d&#39;électron focalisé et système d&#39;optique électronique d&#39;illumination pour la mise en oeuvre dudit procédé
DE10232689A1 (de) Mit Strahlen geladener Teilchen arbeitende Anwendungen
DE102023120127B4 (de) Teilchenoptische Anordnung, insbesondere Vielstrahl-Teilchenmikroskop, mit einer Magnetanordnung zum Separieren eines primären und eines sekundären teilchenoptischen Strahlenganges mit verbesserter Performance
DE102022114923B4 (de) Verfahren zum Betreiben eines Vielstrahl-Teilchenmikroskops, Computerprogrammprodukt und Vielstrahl-Teilchenmikroskop
DE102015210893B4 (de) Analyseeinrichtung zur Analyse der Energie geladener Teilchen und Teilchenstrahlgerät mit einer Analyseeinrichtung
DE102017208005B3 (de) Teilchenquelle zur Erzeugung eines Teilchenstrahls und teilchenoptische Vorrichtung
DE102023119451B4 (de) Vielstrahl-Teilchenstrahlsystem mit elektrostatischer Boosterlinse, Verfahren zum Betreiben eines Vielstrahl-Teilchenstrahlsystems und zugehöriges Computerprogrammprodukt
DE102020115183B4 (de) Teilchenstrahlsystem mit Multiquellensystem sowie Mehrstrahl-Teilchenmikroskop
DE102010041813A1 (de) Teilchenstrahlgerät und Verfahren zur Untersuchung und/oder Bearbeitung eines Objekts

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: UNKNOWN

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20220131

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)