EP4078632A1 - Dispositif électrique pour convertisseur, convertisseur et agencement avec machine électrique et convertisseur - Google Patents

Dispositif électrique pour convertisseur, convertisseur et agencement avec machine électrique et convertisseur

Info

Publication number
EP4078632A1
EP4078632A1 EP20824511.8A EP20824511A EP4078632A1 EP 4078632 A1 EP4078632 A1 EP 4078632A1 EP 20824511 A EP20824511 A EP 20824511A EP 4078632 A1 EP4078632 A1 EP 4078632A1
Authority
EP
European Patent Office
Prior art keywords
busbar
connection
arrangement
connection arrangement
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP20824511.8A
Other languages
German (de)
English (en)
Inventor
Arnoud Smit
Alexander Bucher
Harald Hofmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Valeo eAutomotive Germany GmbH
Original Assignee
Valeo eAutomotive Germany GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Valeo eAutomotive Germany GmbH filed Critical Valeo eAutomotive Germany GmbH
Publication of EP4078632A1 publication Critical patent/EP4078632A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
    • H01G2/10—Housing; Encapsulation
    • H01G2/106—Fixing the capacitor in a housing
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/10—Multiple hybrid or EDL capacitors, e.g. arrays or modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/74—Terminals, e.g. extensions of current collectors
    • H01G11/76—Terminals, e.g. extensions of current collectors specially adapted for integration in multiple or stacked hybrid or EDL capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/78—Cases; Housings; Encapsulations; Mountings
    • H01G11/82—Fixing or assembling a capacitive element in a housing, e.g. mounting electrodes, current collectors or terminals in containers or encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
    • H01G2/02—Mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
    • H01G2/02—Mountings
    • H01G2/04—Mountings specially adapted for mounting on a chassis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
    • H01G2/22—Electrostatic or magnetic shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/38—Multiple capacitors, i.e. structural combinations of fixed capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/40—Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02G—INSTALLATION OF ELECTRIC CABLES OR LINES, OR OF COMBINED OPTICAL AND ELECTRIC CABLES OR LINES
    • H02G5/00—Installations of bus-bars
    • H02G5/02—Open installations
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
    • H01M50/50—Current conducting connections for cells or batteries
    • H01M50/502—Interconnectors for connecting terminals of adjacent batteries; Interconnectors for connecting cells outside a battery casing
    • H01M50/507—Interconnectors for connecting terminals of adjacent batteries; Interconnectors for connecting cells outside a battery casing comprising an arrangement of two or more busbars within a container structure, e.g. busbar modules
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Definitions

  • the present invention relates to an electrical device for a Stromrich ter, comprising a capacitor arrangement with at least one capacitor having a first connection and a second connection; a first busbar and a second busbar, a respective busbar at least within a section having a greater extent along a transverse direction than along a longitudinal direction, within the section having a greater extent along the longitudinal direction than along a vertical direction and in the section having a first surface and a second surface has, which are opposite with respect to the vertical direction; a first contacting device which is in electrically conductive contact with the first connection of the at least one capacitor and via which the first connection of the at least one capacitor is electrically conductively connected to the first busbar; and a second contacting device which is in electrically conductive contact with the second connection of the at least one capacitor and via which the second connection of the at least one capacitor is electrically conductively connected to the second busbar.
  • the invention relates to a power converter and an arrangement with an electrical machine and a power converter.
  • the busbars are used to connect the capacitor arrangement with a DC voltage-side connection to a semiconductor power unit and typically also form a connection option for DC voltage connections of the converter.
  • the capacitor arrangement is connected to the busbars by the contacting devices, the connections of the at least one capacitor being typically welded to the contacting device.
  • it is known to form individual tab-like connections on the busbars, each of which are contacted with corresponding tab-like connection elements of the semiconductor power unit.
  • the invention is based on the object of specifying an electrical device for a power converter which is improved in comparison, in particular with regard to the electromagnetic and / or thermal behavior during operation.
  • the invention provides for an electrical device of the type mentioned that the second surface of the first busbar is spaced in the vertical direction opposite the first surface of the second busbar in the section, so that the busbars in the vertical direction a connection space for connecting a semiconductor power unit limit.
  • the invention is based on the idea of realizing a transverse railing through the busbars, which limits the connection space for connecting the semiconductor power unit in the vertical direction on both sides.
  • Individual connection elements which are each provided for connection to the first and the second busbar, can thus be introduced into the connection space from the longitudinal direction and connected to one another and to the capacitor arrangement by means of the respective busbar.
  • the ability of the transverse busbar to store magnetic field energy when operating with alternating currents is significantly reduced.
  • the busbars form an electromagnetic shielding of the connection space in the vertical direction. This makes it possible, in particular, to use particularly high switching frequencies of the semiconductor power unit, as made possible by modern silicon carbide MOSFETs and other wide band gap devices. It occurs on the one hand through the lower Leakage inductance at high switching frequencies results in lower switching losses.
  • the shield simultaneously limits the high-frequency electromagnetic fields that are radiated outwards at a higher switching frequency.
  • connection elements of the semiconductor power unit act like a two-wire line for a respective busbar, which spans an area penetrated by a magnetic flux and thus stores electrical energy.
  • this is typically modeled as a parasitic series inductance between the busbar and the semiconductor power unit.
  • direct current a magnetic field is formed inside a respective connection element, whereas for high frequencies due to eddy currents, the magnetic field is displaced, so that the inside of the connection element is field-free for very high frequencies.
  • such a conductor structure is divided into an internal and external inductance, with the internal inductance making no contribution to the total inductance for very high frequencies.
  • the characteristics of the magnetic field lines between corresponding connection elements of the semiconductor power unit are now modified in such a way that their ability to store magnetic field energy is significantly reduced.
  • a magnetic di pole moment in particular shifts from the vertical direction to the transverse direction.
  • the interior of the busbars is field-free and the mean path lengths of the magnetic field lines are considerably lengthened, which explains the reduction in leakage inductance.
  • the transverse busbar arrangement also results in a lower transmission resistance because alternating components of the current flowing along the busbars also have a common current path to the contacting devices.
  • Another advantage of the device according to the invention can be identified from a thermal point of view.
  • the busbars realize a high degree of thermal decoupling of the capacitor arrangement from the semiconductor power unit, because they extend in the transverse direction along the connection space and thus realize a high current-carrying capacity. Due to the large surface areas of the busbars resulting therefrom, the device according to the invention allows efficient cooling on one or both sides. This is particularly relevant with regard to the typically low maximum permissible operating temperature of the capacitor arrangement compared to the semiconductor power unit, especially when capacitors with foils based on polypropylene with a typical maximum permissible operating temperature of 105 ° C are used.
  • the installation space that is conventionally required for the separate tab-like connection elements of the busbar can be saved and the occurrence of power losses through assembly transitions can be reduced.
  • the low-effort transverse railing can also be implemented inexpensively
  • the capacitor arrangement it is preferred if it has several capacitors.
  • the or a respective capacitor can be designed as a film capacitor. It is preferred if the capacitor is formed on the basis of polypropylene.
  • the first connection and the second connection of the or a respective capacitor are formed on opposite sides of the capacitor, in particular at a distance from one another in the vertical direction.
  • the capacitor arrangement also preferably has a housing in which the or a respective capacitor is accommodated. The capacitors are typically enclosed in the housing by means of a potting compound.
  • the contacting devices are typically connected to the first or the second connection of the or a respective capacitor in a materially bonded manner, preferably by a welded connection.
  • the connections of the or a respective capacitor can be formed on a Schoop layer be.
  • the contacting devices are preferably each formed from a metal sheet that is guided at an angle along the capacitors to the busbars.
  • the contacting devices are enclosed in sections in the housing of the capacitor arrangement by the potting compound. Expediently, an end section of a respective contacting device, which is led to the busbar, protrudes from the potting compound.
  • the first contacting device is in contact with the second surface of the first busbar.
  • the first contacting device extends into the connection space in this case.
  • the second contacting device can be provided in the case of the second contacting device that it is contacted with the first surface of the second busbar.
  • the second contacting device extends into the receiving space.
  • the second contacting device is in contact with the second surface of the second busbar.
  • the first contacting device and / or the second contacting device has connection elements separated in the transverse direction in their area contacting the busbar. If the first or the second contacting device has connection elements separated in this way, the above-described leakage inductance-reducing effect can also be achieved with regard to the contacting device or the contacting devices through the direct contact with the corresponding busbar.
  • the electrical device expediently further comprises the semiconductor power unit, which has at least one Semiconductor switch arrangement, a first connection arrangement and a second connection arrangement, wherein the first connection arrangement is electrically conductively connected to the first busbar and the second connection arrangement is electrically conductively connected to the second busbar.
  • the connection arrangements typically extend from the longitudinal direction into the connection space.
  • a semiconductor switch arrangement is provided for each phase.
  • the or a respective semiconductor switch arrangement typically comprises a half-bridge formed from semiconductor switching elements.
  • first connection arrangement is in contact with the first busbar and / or the second connection arrangement is in contact with the second busbar.
  • the first connection arrangement only has a single connection element.
  • the first connection arrangement has a plurality of connection elements separated in the transverse direction.
  • the second connection arrangement can have several connection elements separated in the transverse direction.
  • the second connection arrangement it is also possible here for the second connection arrangement to have only a single connection element.
  • at least one connection element of the first connection arrangement and / or at least one connection element of the second connection arrangement is provided for each semiconductor switch arrangement.
  • first connection arrangement and the second connection arrangement extend in a plane spanned by the longitudinal direction and the transverse direction. It is then preferred if the second upper surface of the first busbar and / or the first surface of the second busbar has or have projections pointing into the connection space in order to contact the respective connection arrangement. According to an alternative preferred embodiment, it is provided that the first connection arrangement and the second connection arrangement each extend in a plane spanned by the longitudinal direction and the transverse direction, the planes being spaced apart in the vertical direction. Then the ge called projections can be dispensed with, which simplifies the manufacture of the busbars ver.
  • the electrical device which further comprises the semiconductor power unit, which has at least one semiconductor switch configuration, a first connection arrangement and a second connection arrangement, the first connection arrangement being electrically conductively connected to the first busbar and the second connection arrangement being electrically conductively connected to the second busbar is connected, it can be provided that the first contacting device is contacted with the second surface of the first busbar and the first connection arrangement is electrically conductively connected to the first contacting device via the first contacting device or the first connection arrangement is connected to the second surface of the first current bills is contacted and the first contacting device is electrically conductively connected to the first busbar via the first connection arrangement.
  • the second contacting device may be in contact with the first surface of the second busbar and for the second connection arrangement to be electrically conductively connected to the second busbar via the second contacting device or for the second connection arrangement to contact the first surface of the second busbar and the second contacting device is electrically conductively connected to the second busbar via the second connection arrangement
  • an insulating means which electrically insulates the current rails from one another, is arranged in the connection space.
  • the electrical device according to the invention preferably further comprises a clamping device by means of which the busbars and the contacting devices are clamped together.
  • the clamping device can, for example, comprise a plurality of screws which pass through one of the busbars and are screwed into threaded bushings arranged on the other busbar.
  • the tensioning device is electrically isolated from the busbars.
  • the electrical device according to the invention can furthermore comprise a pressing device, by means of which the busbars and the contacting devices are pressed against one another.
  • the pressing device can have one or more spring elements which compress the busbar by means of a restoring force acting against an armature.
  • the springs are preferably designed as leaf springs or, alternatively, as helical springs.
  • busbars and the contacting devices are welded, soldered or otherwise cohesively connected.
  • the device also has a cooling device which is thermally conductively connected to a busbar or the busbars.
  • the transverse railing provides an easily accessible heat transfer surface that can be actively cooled in an excellent manner. This reinforces the aforementioned thermal decoupling of the capacitor arrangement from the semiconductor power unit.
  • there is not enough space for the arrangement of the cooling device especially since the tab-shaped connection elements of conventional busbars are already largely covered by screws.
  • the cooling device is flat on the first surface of the first busbar and / or flat rests on the second surface of the second busbar.
  • the cooling device preferably comprises a heat transfer medium, such as a gap filler, which is applied to the or a respective busbar.
  • a power converter comprising an electrical device according to the invention, the capacitor arrangement being designed as an intermediate circuit capacitor and the busbars forming DC voltage connections.
  • the converter is preferably designed as an inverter or as an active rectifier.
  • the object on which the invention is based is finally also achieved by an arrangement with an electrical machine and a power converter according to the invention, which is connected to the electrical machine to provide a single- or multi-phase AC voltage
  • FIG. 1 shows a block diagram of an exemplary embodiment of the arrangement according to the invention with an exemplary embodiment of the converter according to the invention
  • Fig. 2 is a sectional perspective view of a firstforsbei game of the device according to the invention.
  • FIG. 3 shows a detailed view of FIG. 2
  • Fig. 4 is a sectional perspective view of a secondforsbei game of the device according to the invention.
  • FIG. 5 shows a detailed view of FIG. 4;
  • Fig. 6 is a sectional perspective view of a third game personssbei the device according to the invention.
  • FIG. 7 shows a detailed view of FIG. 6
  • FIG. 9 shows a magnetic field distribution during operation of the connection elements shown in FIG. 8 with direct current
  • FIG. 10 shows a magnetic field distribution for a high-frequency alternating field during operation of the connection elements shown in FIG. 8;
  • FIG. 11 shows a schematic diagram of two connection elements with busbars of the device according to the invention.
  • FIG. 12 shows a magnetic field distribution when the device according to FIG. 11 is operated with direct current
  • FIG. 13 shows a magnetic field distribution for a high-frequency alternating field during operation during operation of the device according to FIG. 11;
  • FIG. 14 shows a schematic diagram of four connection elements with busbars according to a fourth exemplary embodiment of the device according to the invention.
  • 15 shows a magnetic field distribution when the device according to FIG. 14 is operated with direct current;
  • 16 shows a magnetic field distribution for a high-frequency alternating field during operation during operation of the device according to FIG. 14;
  • FIG. 1 is a block diagram of an exemplary embodiment of an arrangement 1 with an electrical machine 2 and an exemplary embodiment of a converter 3 which is connected to the electrical machine 2 to provide a polyphase, here three-phase, alternating voltage.
  • the converter 3 has DC voltage connections 4, which are shown in a state connected to an external DC voltage source 5 in the form of a floch-volt battery.
  • the converter 3 comprises an electrical device 6 according to one of the exemplary embodiments explained below.
  • the electrical device 6 comprises a capacitor arrangement 7 and a semiconductor power unit 8.
  • This comprises a plurality of semiconductor switch arrangements 9, each of which is formed by a half bridge of two semiconductor switch elements 10, 11.
  • the internal structure is shown in FIG. 1 only in the case of a semiconductor switch arrangement 9.
  • a phase of the alternating voltage for the electrical machine 2 can be provided at a tap between the semiconductor switch elements 10, 11 of a respective semiconductor switch arrangement 9. 1 also shows, purely schematically, a control unit 12 of the converter 6, which controls the semiconductor power unit for generating the polyphase alternating voltage.
  • Fig. 2 is a sectional perspective view of a firstraresbei game of the electrical device 6.
  • Fig. 3 is an associated detailed view.
  • the capacitor arrangement 7 comprises a housing 13 in which a plurality of capacitors designed as film capacitors are arranged, each of which has a first connection and a second connection.
  • the capacitors are enclosed in the housing 13 by means of a potting compound 14 so that they are covered in the drawings.
  • the electrical device 6 comprises a first busbar 15 and a second busbar 16.
  • the busbar 15, 16 has a greater extent along a transverse direction than along a longitudinal direction.
  • a respective busbar 15, 16 also has a greater extension along the longitudinal direction than along a vertical direction.
  • a first surface 18 and a second surface 19 of the first busbar 15 with respect to the vertical direction lie opposite each other and a first Oberflä surface 20 and a second surface 21 of the second busbar 16 with respect to the vertical direction opposite.
  • the second surface 19 of the first busbar 15 lies in the vertical direction at a distance from the first surface 20 of the second busbar 16, so that the busbars 15, 16 or their surfaces 19, 20 in section 17 have a receiving space 22 for connecting the semiconductor power unit 8 in limit the vertical direction.
  • the electrical device 6 comprises a firstmaschinetechniksvorrich device 24, which is electrically conductively con tacted with the first terminal of the capacitors.
  • a respective first connection of the capacitors to the first busbar 15 is connected in an electrically conductive manner via the first contacting device 24.
  • the first contacting device 24 extends as a sheet metal inside the housing 13 and is enclosed there by the potting compound 14. From this protrude in the longitudinal direction connecting elements 25, which in the transverse direction are separated and contact the first busbar 15 in that they rest on the first surface 18.
  • the electrical device 6 comprises a secondmaschine istsvor device 26, which is electrically conductively contacted with the second terminal of a respective capacitor.
  • the second connection of the respective capacitor is electrically conductively connected to the second busbar 16 via the second contacting device 26.
  • the second contacting device 26 also extends within the housing 13 and is enclosed by the potting compound 14. From the potting compound 14, connection elements 27 protrude in the longitudinal direction, which are separated in the transverse direction and extend into the connection area 22. There they contact the second busbar 16 by resting on the first surface 20.
  • the contacting of the contacting devices 24, 26 with the first or second connection of a respective capacitor is implemented by a material connection on a Schoop layer.
  • the semiconductor power unit 8 comprises a first connection arrangement 28, which is electrically conductively connected to the first busbar 15, and a second connection arrangement 29, which is electrically conductively connected to the second busbar 16.
  • the connection arrangements 28, 29 each extend from the longitudinal direction from the side opposite the capacitor arrangement 7 into the connection space 22.
  • the first connection arrangement 28 has a connection element 30 and the second connection arrangement 29 has a connection element 31.
  • the connection elements 30 of the first connection arrangement 28 are connected to the semiconductor switch elements 11 and the connection elements 31 of the second connection arrangement 29 are connected to the semiconductor switch elements 10.
  • Fig. 1 also shows for a respective Semiconductor switch arrangement 9 has a leakage inductance 32 which causes a respective connection element 30 of the first connection arrangement 28, and a leakage inductance 33 which causes a respective connection element 31 of the second connection arrangement 29.
  • leakage inductances 34, 35 which cause the contacting devices 24, 26 are shown.
  • the scattering inductances 32 to 35 are each modeled as concentrated components in the block diagram.
  • connection arrangements 28, 29 each extend in a plane spanned by the longitudinal direction and the transverse direction, the planes being spaced apart in the vertical direction.
  • connection arrangements 28, 29 are offset in the vertical direction.
  • the connection elements 30 of the first connection arrangement 28 lie on the second surface 19 of the first busbar 15 and thereby contact them.
  • connection elements 31 of the second connection arrangement 29 rest on the first surface 20 of the second busbar 16 and thereby contact them.
  • the first connection of a respective capacitor, the first contacting device 24 and the first connection arrangement 28 are on the first busbar 15 on a first, here negative, potential 36 of the electrical device 6 and the second connection of a respective capacitor, the second Contacting device 26 and the second connection arrangement 29 on a second, here positive, potential 37 of the electrical device 6.
  • the electrical device 6 in the receiving space comprises an Isoliermit tel 38 which electrically isolates the busbars 15, 16 from one another.
  • the busbars 15, 16 and the contacting devices 24, 26 are clamped against one another by means of a clamping device 39.
  • the jig 39 includes one on the side of the first Surface 18 of the first busbar 15 and several screws 41, which penetrate the insulating element 40, the first busbar 15 and the insulating means 38 and protrude into the second busbar 16.
  • the tensioning device 39 for each screw 41 threaded sockets 42 attached to the second busbar 16.
  • a part of the screws 41 also penetrates the connection elements 30 of the first connection arrangement 28 and the connection elements 27 of the second contacting device 26 and another part of the screws 41 penetrates the connection elements 31 of the second connection arrangement 29.
  • the electrical device 6 further comprises a cooling device 43 which is thermally conductively connected to the second busbar 16 in that it rests flat on the second surface 21 of the second busbar 16.
  • Fig. 4 is a sectional perspective view of a secondstrasbei game of the electrical device 6.
  • Fig. 5 is an associated detailed view.
  • the second exemplary embodiment of the electrical device 6 essentially corresponds to the first exemplary embodiment, with the exception of the differences described below.
  • identical components or components with the same effect are provided with identical reference symbols.
  • the first connection arrangement 28 of the semiconductor power unit 8 has two connection elements 31 for a respective semiconductor switch element 10.
  • the connection arrangements 28, 29 or their connection elements 30, 31 are arranged in a plane spanned by the longitudinal direction and the transverse direction.
  • both the first busbar and the second busbar 16 have a multiplicity of projections in order to contact the connection arrangements 26, 27.
  • the insulating means 38 follows this surface structure of the busbar 15, 16.
  • Fig. 6 is a sectional perspective view of a third,sbei game of the electrical device 6.
  • Fig. 7 is an associated detailed view. This exemplary embodiment essentially corresponds to the second exemplary embodiment, with only the differences being discussed below.
  • the contacting devices 24, 26 already run from the edges 44 of the housing 13 outside the housing 13 and, as in the previous exemplary embodiments, do not only protrude from the potting compound 14 at the level of the busbar 15, 16.
  • the first contacting device 24 has only a single connection element 25 that is continuous in the transverse direction.
  • the electrical device 6 has a pressing device 45, by means of which the first busbar 15 is pressed against the second busbar 16.
  • the pressing device 45 has an armature 46 and a multiplicity of spring elements 47 which generate a restoring force between the armature 46 and the first busbar 15.
  • leaf springs in particular wave leaf springs, can also be used as spring elements.
  • connection elements 30 ′, 31' are not arranged in a connection space delimited in the vertical direction by busbars.
  • FIG. 9 and 10 each show a magnetic field distribution during operation of the connection elements shown in FIG. 8, FIG. 9 showing operation with a direct current and FIG. 10 showing a high-frequency alternating field in the megahertz range.
  • the magnetic flux density is distributed like a two-wire line with opposite current directions, so that the magnetic flux density runs perpendicular to a surface spanned by the connection elements 30 ', 31'.
  • the magnitude of the magnetic flux density is also greatest in the area of the spanned area. This results in high values of a magnetic flux, which causes high leakage inductances 32, 33 (see FIG. 1).
  • FIG. 11 is a schematic diagram of two connection elements 30, 31 and the busbars 15, 16, which essentially corresponds to the arrangement according to the first exemplary embodiment of the electrical device 6.
  • the representations of FIGS. 12 and 13 correspond to the representations in FIGS. 9 and 10, respectively.
  • FIGS. 9 and 10 By comparing FIGS. 9 and 10, on the one hand, and FIGS. 12 and 13, on the other hand, it becomes clear that the magnetic field distribution in the case of the arrangement according to FIG , 31 run essentially in the transverse direction and not, as in FIGS. 9 and 10, in the floch direction. That is, the area spanned by the connection elements 30, 31 is penetrated only to a very small extent by components in the vertical direction of the magnetic flux density, so that only very low values of the magnetic flux arise. At the same time, an axis of a resulting magnetic dipole moment shifts in the high-frequency alternating field according to FIG. 13 from the vertical direction into the transverse direction.
  • the inside of the conductor of the connection elements 30, 31 is practically field-free in the case of a high-frequency alternating field and mean path lengths of the magnetic field lines are significantly lengthened compared to FIG. 10. All of this lowers the leakage inductances 32, 33 (see FIG. 1) considerably, whereby it should be noted that the field distributions shown illustrate this effect qualitatively and only relate to a section. The shielding effect is even greater if it is continued in the transverse direction.
  • connection elements 25, 27, 30, 31 with the busbars 15, 16 are connected to the connection elements 25, 27 of the contacting devices 24, 26 via the connection elements 30, 31 of the connection arrangements 28, 29, i.e. not contacted with the busbars 15, 16.
  • FIGS. 15 and 16 show, analogously to FIGS. 9 and 10, the field distribution resulting therefrom.
  • a reduction in the leakage inductances 34, 35 can also be implemented.
  • the magnetic field lines have components in the transverse direction and in the flea direction.
  • FIG. 17 is a double logarithmic diagram of an inductance coating Ls over a frequency f.
  • FIG. 18 is a double logarithmic diagram of a resistance coating Rs over the frequency f
  • Gradients 51, 54 relate to the inductance layer or the resistance layer of the connection elements 30, 31 according to FIG. 11.
  • Gradients 52, 55 relate to the inductance layer or the resistance layer of the connection elements 30, 31 according to FIG. 14.
  • the cross-rail system can reduce the inductance coating over a wide frequency range by at least a factor of 10 compared to the reference.
  • the resistance coating can also be reduced by at least a factor of 6 compared to the reference over a wide frequency range.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Conversion In General (AREA)
  • Inverter Devices (AREA)

Abstract

L'invention concerne un dispositif électrique (6) pour un convertisseur (3), comprenant - un ensemble condensateur (7) ayant au moins un condensateur comprenant une première borne et une seconde borne ; - une première barre omnibus (15) et une seconde barre omnibus (16), chaque barre omnibus (15, 16), au moins à l'intérieur d'une section (17), a une étendue supérieure le long d'une direction transversale que le long d'une direction longitudinale, à l'intérieur de la section (17) a une plus grande étendue le long de la direction longitudinale que le long d'une direction verticale et dans la section (17) présente une première surface (18, 20) et une seconde surface (19, 21), qui sont opposées l'une à l'autre par rapport à la direction verticale ; - un premier dispositif de mise en contact (24), qui est électriquement en contact avec la première borne de l'au moins un condensateur et qui est relié de manière électriquement conducteur à la première barre omnibus (15) par l'intermédiaire de la première borne de l'au moins un condensateur ; et - un second dispositif de mise en contact (26), qui est électriquement en contact avec la seconde borne de l'au moins un condensateur et qui est relié de manière électriquement conducteur à la seconde barre omnibus (16) par l'intermédiaire de la seconde borne de l'au moins un condensateur ; la seconde surface (19) de la première barre omnibus (15) est opposée et espacée dans la direction verticale à partir de la première surface (20) de la seconde barre omnibus (16) dans la section (17), de telle sorte que les barres omnibus (15, 16) délimitent dans la direction verticale un espace de borne (22) pour connecter une unité de puissance à semi-conducteur (8).
EP20824511.8A 2019-12-17 2020-12-10 Dispositif électrique pour convertisseur, convertisseur et agencement avec machine électrique et convertisseur Pending EP4078632A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102019134791.2A DE102019134791A1 (de) 2019-12-17 2019-12-17 Elektrische Vorrichtung für einen Stromrichter, Stromrichter und Anordnung mit einer elektrischen Maschine und einem Stromrichter
PCT/EP2020/085408 WO2021122256A1 (fr) 2019-12-17 2020-12-10 Dispositif électrique pour convertisseur, convertisseur et agencement avec machine électrique et convertisseur

Publications (1)

Publication Number Publication Date
EP4078632A1 true EP4078632A1 (fr) 2022-10-26

Family

ID=73835584

Family Applications (1)

Application Number Title Priority Date Filing Date
EP20824511.8A Pending EP4078632A1 (fr) 2019-12-17 2020-12-10 Dispositif électrique pour convertisseur, convertisseur et agencement avec machine électrique et convertisseur

Country Status (5)

Country Link
US (1) US12166425B2 (fr)
EP (1) EP4078632A1 (fr)
CN (1) CN114868214A (fr)
DE (1) DE102019134791A1 (fr)
WO (1) WO2021122256A1 (fr)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1087881C (zh) 1996-07-22 2002-07-17 魁北克水电公司 用来把直流电压转换成交流电压的低杂散互连电感功率转换模块、及其转换方法
US8031479B2 (en) * 2008-03-04 2011-10-04 Kabushiki Kaisha Toyota Jidoshokki Power converter apparatus
DE102009043181A1 (de) 2009-09-26 2011-04-07 Semikron Elektronik Gmbh & Co. Kg Stromrichteranordnung
DE102014114828B4 (de) 2014-10-13 2018-02-15 Semikron Elektronik Gmbh & Co. Kg Anordnung mit einem Leistungshalbleitermodul, mit einer Gleichspannungsverschienung und mit einer Kondensatoreinrichtung
JP2017022863A (ja) 2015-07-10 2017-01-26 株式会社日立製作所 電力変換装置及びその保守方法
EP3185660A1 (fr) 2015-12-22 2017-06-28 Siemens Aktiengesellschaft Agencement de rails conducteurs
WO2019032874A1 (fr) 2017-08-11 2019-02-14 Galatech, Inc. Condensateur d'onduleur avec barre omnibus de sortie de phase
EP3457418A1 (fr) 2017-09-18 2019-03-20 Siemens Mobility GmbH Condensateur à basse inductance et batterie de condensateurs
DE102021207408A1 (de) * 2021-07-13 2023-01-19 Robert Bosch Gesellschaft mit beschränkter Haftung Batteriemodul und Verfahren zur Herstellung eines solchen

Also Published As

Publication number Publication date
US12166425B2 (en) 2024-12-10
DE102019134791A1 (de) 2021-06-17
WO2021122256A1 (fr) 2021-06-24
CN114868214A (zh) 2022-08-05
US20230015579A1 (en) 2023-01-19

Similar Documents

Publication Publication Date Title
EP3579409B1 (fr) Dispositif amplificateur haute fréquence
EP0578116B1 (fr) Arrangement de condensateur de sortie d'un dispositif d'alimentation en courant commuté
EP2302782B1 (fr) Agencement de convertisseur de courant
EP3906609B1 (fr) Machine électrique
EP3545538A1 (fr) Condensateur, en particulier condensateur de circuit intermédiaire pour un système multiphasé
WO2018210506A1 (fr) Système de commutation à semi-conducteurs
WO2022128999A1 (fr) Onduleur
EP3281507B1 (fr) Modulateur de phase pour convertisseur de courant
WO2021174282A1 (fr) Ensemble convertisseur
EP4078632A1 (fr) Dispositif électrique pour convertisseur, convertisseur et agencement avec machine électrique et convertisseur
EP3200225A2 (fr) Module électronique comprenant un système semi-conducteur de puissance
EP3300470A1 (fr) Convertisseur
WO2008098628A1 (fr) Élément d'amortissement
EP3208925B1 (fr) Convertisseur
EP3181284B1 (fr) Circuit de convertisseur
DE102019134671B4 (de) Filter für eine elektrische maschine
DE102021214906A1 (de) Elektronische Baugruppe
WO2022152453A1 (fr) Convertisseur de puissance doté d'au moins deux modules semi-conducteurs de puissance
DE102012110635A1 (de) Stromrichtervorrichtung und Verfahren zur Stromregelung an einer Elektroarbeitsmaschine
DE102019202728A1 (de) Schaltungsanordnung zur Ansteuerung einer elektrischen Maschine
WO2022200418A1 (fr) Dispositif de connexion électrique doté d'un piège planaire
DE2140071A1 (de) Hochspannungs-Halbleitergleichrichtervorrichtung
WO2023061878A1 (fr) Module electronique
WO2023061879A1 (fr) Module electronique
DE102022207899A1 (de) Leistungshalbleitermodul

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: UNKNOWN

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20220706

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)
P01 Opt-out of the competence of the unified patent court (upc) registered

Effective date: 20230528