EP4276892A3 - Élément semi-conducteur, son procédé de production, et dispositif électronique - Google Patents

Élément semi-conducteur, son procédé de production, et dispositif électronique Download PDF

Info

Publication number
EP4276892A3
EP4276892A3 EP23199714.9A EP23199714A EP4276892A3 EP 4276892 A3 EP4276892 A3 EP 4276892A3 EP 23199714 A EP23199714 A EP 23199714A EP 4276892 A3 EP4276892 A3 EP 4276892A3
Authority
EP
European Patent Office
Prior art keywords
electronic device
region
semiconductor element
producing same
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP23199714.9A
Other languages
German (de)
English (en)
Other versions
EP4276892A2 (fr
Inventor
Suguru Saito
Nobutoshi Fujii
Ryosuke Matsumoto
Yoshifumi ZAIZEN
Shuji Manda
Shunsuke Maruyama
Hideo Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of EP4276892A2 publication Critical patent/EP4276892A2/fr
Publication of EP4276892A3 publication Critical patent/EP4276892A3/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/021—Manufacture or treatment of image sensors covered by group H10F39/12 of image sensors having active layers comprising only Group III-V materials, e.g. GaAs, AlGaAs or InP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/193—Infrared image sensors
    • H10F39/1935—Infrared image sensors of the hybrid type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H10W70/614—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together the multiple chips being integrally enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/961—Functions of bonds pads
    • H10W72/963—Providing mechanical bonding or support, e.g. dummy bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/961—Functions of bonds pads
    • H10W72/967—Multiple bond pads having different functions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/301—Bonding techniques, e.g. hybrid bonding
    • H10W80/312—Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of electrically conductive pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/301—Bonding techniques, e.g. hybrid bonding
    • H10W80/327—Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
    • H10W90/792—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between multiple chips
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
EP23199714.9A 2017-04-19 2018-04-16 Élément semi-conducteur, son procédé de production, et dispositif électronique Pending EP4276892A3 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2017082562 2017-04-19
PCT/JP2018/009038 WO2018193747A1 (fr) 2017-04-19 2018-03-08 Dispositif à semi-conducteur, son procédé de fabrication et appareil électronique
PCT/JP2018/015730 WO2018194030A1 (fr) 2017-04-19 2018-04-16 Élément semi-conducteur, son procédé de production, et dispositif électronique
EP18787243.7A EP3614434B1 (fr) 2017-04-19 2018-04-16 Élément semi-conducteur, son procédé de production, et dispositif électronique

Related Parent Applications (2)

Application Number Title Priority Date Filing Date
EP18787243.7A Division EP3614434B1 (fr) 2017-04-19 2018-04-16 Élément semi-conducteur, son procédé de production, et dispositif électronique
EP18787243.7A Division-Into EP3614434B1 (fr) 2017-04-19 2018-04-16 Élément semi-conducteur, son procédé de production, et dispositif électronique

Publications (2)

Publication Number Publication Date
EP4276892A2 EP4276892A2 (fr) 2023-11-15
EP4276892A3 true EP4276892A3 (fr) 2024-02-21

Family

ID=61768373

Family Applications (2)

Application Number Title Priority Date Filing Date
EP18787243.7A Active EP3614434B1 (fr) 2017-04-19 2018-04-16 Élément semi-conducteur, son procédé de production, et dispositif électronique
EP23199714.9A Pending EP4276892A3 (fr) 2017-04-19 2018-04-16 Élément semi-conducteur, son procédé de production, et dispositif électronique

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP18787243.7A Active EP3614434B1 (fr) 2017-04-19 2018-04-16 Élément semi-conducteur, son procédé de production, et dispositif électronique

Country Status (7)

Country Link
US (1) US10991745B2 (fr)
EP (2) EP3614434B1 (fr)
JP (2) JP7211935B2 (fr)
KR (3) KR102765294B1 (fr)
CN (3) CN110520997B (fr)
TW (1) TWI758434B (fr)
WO (2) WO2018193747A1 (fr)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112019004680T5 (de) * 2018-09-19 2021-06-10 Sony Semiconductor Solutions Corporation Bildgebungselement, halbleiterelement und elektronische einrichtung
EP3869561A4 (fr) * 2018-10-16 2022-01-05 Sony Semiconductor Solutions Corporation Élément semi-conducteur et son procédé de fabrication
TWI850281B (zh) * 2018-12-27 2024-08-01 日商索尼半導體解決方案公司 半導體元件
CN121398170A (zh) 2019-02-28 2026-01-23 索尼半导体解决方案公司 图像传感器
KR102711294B1 (ko) * 2019-04-09 2024-09-27 신에쯔 한도타이 가부시키가이샤 전자 디바이스의 제조 방법
JPWO2021009978A1 (fr) * 2019-07-12 2021-01-21
JP7391574B2 (ja) * 2019-08-29 2023-12-05 キヤノン株式会社 半導体装置の製造方法および半導体装置
US11164844B2 (en) * 2019-09-12 2021-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Double etch stop layer to protect semiconductor device layers from wet chemical etch
CN113383420B (zh) * 2019-10-09 2024-12-24 伊鲁米纳公司 图像传感器结构
JP7520499B2 (ja) 2019-12-04 2024-07-23 ソニーセミコンダクタソリューションズ株式会社 半導体素子および電子機器
JP7562250B2 (ja) 2019-12-04 2024-10-07 ソニーセミコンダクタソリューションズ株式会社 半導体素子および電子機器
JP7566790B2 (ja) * 2020-01-08 2024-10-15 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、撮像装置及び撮像システム
JP7551304B2 (ja) * 2020-03-05 2024-09-17 キヤノン株式会社 半導体装置及び機器
CN111371977A (zh) * 2020-03-17 2020-07-03 Oppo广东移动通信有限公司 电子装置及其摄像头模组
US11373657B2 (en) * 2020-05-01 2022-06-28 Raytheon Applied Signal Technology, Inc. System and method for speaker identification in audio data
US11315545B2 (en) 2020-07-09 2022-04-26 Raytheon Applied Signal Technology, Inc. System and method for language identification in audio data
KR102879035B1 (ko) * 2020-07-10 2025-10-29 삼성전자주식회사 반도체 패키지
US12020697B2 (en) 2020-07-15 2024-06-25 Raytheon Applied Signal Technology, Inc. Systems and methods for fast filtering of audio keyword search
WO2022059635A1 (fr) * 2020-09-17 2022-03-24 パナソニックＩｐマネジメント株式会社 Dispositif d'imagerie
WO2022145138A1 (fr) * 2020-12-28 2022-07-07 ソニーセミコンダクタソリューションズ株式会社 Dispositif d'imagerie à semi-conducteurs et son procédé de fabrication, et instrument électronique
JP2022107339A (ja) * 2021-01-08 2022-07-21 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
JP2022174486A (ja) * 2021-05-11 2022-11-24 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置およびその製造方法、並びに電子機器
US11894477B2 (en) * 2021-05-17 2024-02-06 Raytheon Company Electrical device with stress buffer layer and stress compensation layer
WO2023062846A1 (fr) 2021-10-15 2023-04-20 ソニーセミコンダクタソリューションズ株式会社 Élément de conversion photoélectrique et dispositif d'imagerie
WO2025069370A1 (fr) * 2023-09-29 2025-04-03 ソニーセミコンダクタソリューションズ株式会社 Dispositif d'imagerie à semi-conducteurs
CN119555204A (zh) * 2024-12-13 2025-03-04 苏州镓港半导体有限公司 一种光传感器及可见光多色探测器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005347475A (ja) * 2004-06-02 2005-12-15 Fuji Photo Film Co Ltd 固体撮像素子、及び固体撮像システム
US20120211849A1 (en) * 2011-02-22 2012-08-23 Sony Corporation Semiconductor device, method for manufacturing semiconductor device, method for laminating semiconductor wafers, and electronic device
US20130341694A1 (en) * 2012-06-14 2013-12-26 Rohm Co., Ltd. Photoelectric converter

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005347599A (ja) * 2004-06-04 2005-12-15 Fuji Photo Film Co Ltd カラー受光素子、及び撮像素子
JP4911445B2 (ja) 2005-06-29 2012-04-04 富士フイルム株式会社 有機と無機のハイブリッド光電変換素子
US8299510B2 (en) * 2007-02-02 2012-10-30 Rohm Co., Ltd. Solid state imaging device and fabrication method for the same
JP2010050417A (ja) * 2008-08-25 2010-03-04 Sumitomo Electric Ind Ltd 受光素子アレイ、その製造方法および検出装置
KR20100079399A (ko) 2008-12-31 2010-07-08 주식회사 동부하이텍 이미지 센서 및 그 제조 방법
JP5417850B2 (ja) * 2009-01-05 2014-02-19 住友電気工業株式会社 検出装置およびその製造方法
TW201041158A (en) 2009-05-12 2010-11-16 Chin-Yao Tsai Thin film solar cell and manufacturing method thereof
JP2011100892A (ja) * 2009-11-06 2011-05-19 Sumitomo Electric Ind Ltd 電子機器、複合型電子機器、検出装置、受光素子アレイ、および、これらの製造方法
JP5532870B2 (ja) * 2009-12-01 2014-06-25 富士通セミコンダクター株式会社 半導体装置の製造方法
JP2011198966A (ja) 2010-03-19 2011-10-06 Toshiba Corp 固体撮像装置及びその製造方法
JP2011216673A (ja) * 2010-03-31 2011-10-27 Sony Corp 固体撮像装置、固体撮像装置の製造方法、および電子機器
FR2977982B1 (fr) 2011-07-11 2014-06-20 New Imaging Technologies Sas Matrice de photodiodes ingaas
JP2013214616A (ja) * 2012-04-02 2013-10-17 Sony Corp 固体撮像装置、固体撮像装置の製造方法及び電子機器
US8878325B2 (en) * 2012-07-31 2014-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Elevated photodiode with a stacked scheme
JP2014232761A (ja) * 2013-05-28 2014-12-11 キヤノン株式会社 固体撮像装置
JP2015012239A (ja) 2013-07-01 2015-01-19 ソニー株式会社 撮像素子および電子機器
JP2015088691A (ja) 2013-11-01 2015-05-07 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP5915636B2 (ja) * 2013-12-18 2016-05-11 ソニー株式会社 半導体装置とその製造方法
JP2015119154A (ja) * 2013-12-20 2015-06-25 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、及び電子機器
JP6541313B2 (ja) * 2014-07-31 2019-07-10 キヤノン株式会社 光電変換装置、及び撮像システム
JP6598436B2 (ja) * 2014-08-08 2019-10-30 キヤノン株式会社 光電変換装置、撮像システム、及び光電変換装置の製造方法
WO2016185914A1 (fr) 2015-05-19 2016-11-24 ソニーセミコンダクタソリューションズ株式会社 Dispositif à semi-conducteur, dispositif d'imagerie à semi-conducteur, dispositif électronique et procédé de fabrication d'un dispositif à semi-conducteur
JP6700720B2 (ja) 2015-10-30 2020-05-27 株式会社Ｌｉｘｉｌ 建材、壁構造及び壁紙施工方法
JP6903896B2 (ja) * 2016-01-13 2021-07-14 ソニーグループ株式会社 受光素子の製造方法
JP7312115B2 (ja) * 2017-12-28 2023-07-20 ソニーセミコンダクタソリューションズ株式会社 受光素子および電子機器

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005347475A (ja) * 2004-06-02 2005-12-15 Fuji Photo Film Co Ltd 固体撮像素子、及び固体撮像システム
US20120211849A1 (en) * 2011-02-22 2012-08-23 Sony Corporation Semiconductor device, method for manufacturing semiconductor device, method for laminating semiconductor wafers, and electronic device
US20130341694A1 (en) * 2012-06-14 2013-12-26 Rohm Co., Ltd. Photoelectric converter

Also Published As

Publication number Publication date
KR20190139844A (ko) 2019-12-18
TWI758434B (zh) 2022-03-21
EP3614434A1 (fr) 2020-02-26
KR20250019153A (ko) 2025-02-07
CN110520997B (zh) 2024-05-14
EP4276892A2 (fr) 2023-11-15
US20200035739A1 (en) 2020-01-30
WO2018194030A1 (fr) 2018-10-25
KR20240010533A (ko) 2024-01-23
CN110520997A (zh) 2019-11-29
CN118588722A (zh) 2024-09-03
US10991745B2 (en) 2021-04-27
WO2018193747A1 (fr) 2018-10-25
KR102625900B1 (ko) 2024-01-18
JP7211935B2 (ja) 2023-01-24
EP3614434A4 (fr) 2020-04-15
JP7631384B2 (ja) 2025-02-18
CN118588721A (zh) 2024-09-03
EP3614434B1 (fr) 2023-11-22
JP2023038266A (ja) 2023-03-16
JPWO2018194030A1 (ja) 2020-05-14
TW201842659A (zh) 2018-12-01
KR102765294B1 (ko) 2025-02-11

Similar Documents

Publication Publication Date Title
EP4276892A3 (fr) Élément semi-conducteur, son procédé de production, et dispositif électronique
EP4550400A3 (fr) Puces empilées traitées
SG11201907932UA (en) Semiconductor memory device
TW200629490A (en) Semiconductor device, method of manufacturing the same, capacitor structure, and method of manufacturing the same
WO2014163728A3 (fr) Dispositif supraconducteur ayant au moins une enveloppe
WO2014168665A3 (fr) Procédés de fabrication d'un dispositif supraconducteur à au moins une enceinte
WO2014112954A8 (fr) Substrat pour boîtier de semi-conducteur et méthode de formation de celui-ci
EP4181191A3 (fr) Ensembles microélectroniques
CA3056596C (fr) Integration d'elements de circuit dans un dispositif informatique quantique empile
TW201613040A (en) Integration of embedded thin film capacitors in package substrates
SG10201900070UA (en) Semiconductor device and method of forming double-sidedfan-out wafer level package
EP4421886A3 (fr) Procédé de fabrication d'une cellule solaire
EP3125283A3 (fr) Dispositif semi-conducteur et procédé de formation d'un boîtier de semi-conducteur z de petite taille
JP2014150273A5 (ja) 半導体装置
JP2013222966A5 (fr)
SG10201803458SA (en) Semiconductor memory device and method of manufacturing the same
WO2015013628A3 (fr) Procédés de fabrication de dispositifs à jonctions noyées dans du carbure de silicium faisant appel à la formation d'un canal d'implantation ionique, et dispositifs à base de carbure de silicium comprenant des jonctions noyées
EP3598501A3 (fr) Dispositif d'imagerie à semi-conducteur, procédé de fabrication d'un dispositif d'imagerie à semi-conducteur et appareil électronique
SG10201403206VA (en) Semiconductor device and method of forming low profile 3d fan-out package
TW200741997A (en) Stacked package structure and method for manufacturing the same
JP2012178579A5 (fr)
TW201714253A (en) Method of making embedded memory device with silicon-on-insulator substrate
TW201614792A (en) Semiconductor devices and methods for manufacturing the same
EP2779810A3 (fr) Structure de boîtier de carte de circuit imprimé et son procédé de fabrication
TW201613094A (en) Structure of fin feature and method of making same

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20230926

AC Divisional application: reference to earlier application

Ref document number: 3614434

Country of ref document: EP

Kind code of ref document: P

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

REG Reference to a national code

Ref country code: DE

Ref legal event code: R079

Free format text: PREVIOUS MAIN CLASS: H01L0021740000

Ipc: H01L0027146000

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 27/146 20060101AFI20240116BHEP

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS