EP4312084A1 - Verfahren zur herstellung einer siliziumspirale - Google Patents
Verfahren zur herstellung einer siliziumspirale Download PDFInfo
- Publication number
- EP4312084A1 EP4312084A1 EP22187006.6A EP22187006A EP4312084A1 EP 4312084 A1 EP4312084 A1 EP 4312084A1 EP 22187006 A EP22187006 A EP 22187006A EP 4312084 A1 EP4312084 A1 EP 4312084A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- silicon
- watch component
- handle
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B17/00—Mechanisms for stabilising frequency
- G04B17/04—Oscillators acting by spring tension
- G04B17/06—Oscillators with hairsprings, e.g. balance
- G04B17/066—Manufacture of the spiral spring
-
- G—PHYSICS
- G04—HOROLOGY
- G04D—APPARATUS OR TOOLS SPECIALLY DESIGNED FOR MAKING OR MAINTAINING CLOCKS OR WATCHES
- G04D3/00—Watchmakers' or watch-repairers' machines or tools for working materials
- G04D3/0069—Watchmakers' or watch-repairers' machines or tools for working materials for working with non-mechanical means, e.g. chemical, electrochemical, metallising, vapourising; with electron beams, laser beams
-
- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B13/00—Gearwork
- G04B13/02—Wheels; Pinions; Spindles; Pivots
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- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B19/00—Indicating the time by visual means
- G04B19/04—Hands; Discs with a single mark or the like
- G04B19/042—Construction and manufacture of the hands; arrangements for increasing reading accuracy
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- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B19/00—Indicating the time by visual means
- G04B19/06—Dials
- G04B19/10—Ornamental shape of the graduations or the surface of the dial; Attachment of the graduations to the dial
- G04B19/103—Ornamental shape of the graduations or the surface of the dial; Attachment of the graduations to the dial attached or inlaid numbers
-
- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B21/00—Indicating the time by acoustic means
- G04B21/02—Regular striking mechanisms giving the full hour, half hour or quarter hour
- G04B21/04—Hour wheels; Racks or rakes; Snails or similar control mechanisms
-
- G—PHYSICS
- G04—HOROLOGY
- G04D—APPARATUS OR TOOLS SPECIALLY DESIGNED FOR MAKING OR MAINTAINING CLOCKS OR WATCHES
- G04D3/00—Watchmakers' or watch-repairers' machines or tools for working materials
- G04D3/0074—Watchmakers' or watch-repairers' machines or tools for working materials for treatment of the material, e.g. surface treatment
Definitions
- the invention relates to a method of manufacturing a silicon watch component, and more specifically a silicon watch component having a functional external profile.
- Silicon watch components are generally manufactured by deep reactive ion etching - a technique also known by the English abbreviation DRIE - of a wafer of silicon-based material.
- the wafer can be a silicon wafer which is etched throughout its thickness (see for example the patent applications EP 1722281 , EP 2145857 And EP 3181938 ) or a silicon on insulator substrate called SOI (silicon on insulator) comprising an upper layer of silicon and a lower layer of silicon bonded by an intermediate layer of silicon oxide, the upper layer of silicon being that in which the etching is carried out (see for example patent applications WO 2019/180177 And WO 2019/180596 ).
- the silicon-on-insulator substrate has the advantage of having a rigid support (the lower layer of silicon, of greater thickness than the upper layer) facilitating its handling and its maintenance and a layer of stop (the intermediate layer of silicon oxide) allowing the etching to be stopped.
- Such fasteners which connect the periphery of each component to the wafer, can pose a problem, particularly when the periphery of the component is a functional surface which must not have its function disrupted by attachment residues or when the external surface of the component must present a particularly neat appearance, as for example in the case of a needle.
- the functional exterior surface does not have free space of sufficient size to be able to insert a sufficiently robust fastener.
- the patent application WO 2019/166922 proposes a process for manufacturing a watch hairspring according to which a silicon substrate carrying a silicon oxide layer is provided, through holes are formed in the silicon oxide layer, a layer of silicon on the layer of silicon oxide, this layer of silicon filling the through holes to form attachments or bridges of material, spirals are etched into the layer of silicon, the layer of silicon oxide is eliminated, the spirals remaining attached to the silicon substrate by said fasteners, the spirals are subjected to heat treatments and finally the spirals are detached from the silicon substrate.
- the hairsprings remain linked to the substrate after etching by attachments extending outside the plane of the hairsprings rather than between the exterior surface of the last turn and the etching silicon layer as is generally the case.
- this process does not allow the use of commercial silicon-on-insulator substrates, and growing the silicon layer in which the hairsprings will be formed by epitaxy is a complicated operation.
- the patent application WO 2019/166922 aims to resolve this problem and proposes a process for manufacturing a silicon watch component from an SOI wafer in which the component is attached to an internal anchor to the contour of the component.
- the fastener does not encroach on the functional external contour of the component.
- this process does not does not allow work on the rear face of the component, particularly for components requiring surface treatment or even decoration.
- the invention resolves the aforementioned drawbacks by proposing a solution making it possible to keep the components attached to the wafer, including those which do not allow an attachment to be provided on their external contour, while freeing the rear face to be able to work on it and/or decorate it. .
- the invention also relates to a watch component obtained by implementing a process for manufacturing a watch component conforming to the invention.
- the invention relates to a method of manufacturing a silicon watch component, and more particularly a silicon watch component whose external profile is functional.
- functional external profile is meant a watch component whose outer periphery of the component forms a functional surface arranged to cooperate with other watch parts and/or components.
- the silicon-based material used may be monocrystalline silicon whatever its crystalline orientation.
- other compounds based on silicon or other materials can be considered such as glass, ceramic, cermet, metal or metal alloy.
- the explanation below will be based on a silicon-based material.
- the invention relates to a method of manufacturing a silicon watch component 1.
- Other watch components can be manufactured via the method according to the invention, such as a toothed wheel, an escape wheel, a seesaw, a snail, etc.
- Such a process can also be considered for the manufacture of hands, indexes or even appliques which require the most careful possible external surface finish.
- the method comprises, as illustrated in figure 2 , a first step a) which consists of providing SOI wafers 10, that is to say composed of two layers of silicon 11 and 12, linked to each other by a layer of silicon oxide 13 Each of these three layers has one or more specific roles.
- the lower layer of silicon 12, called “handle”, essentially serves as a mechanical support, so as to be able to carry out the process on a sufficiently rigid assembly (which the reduced thickness of the "device” is not able to guarantee) . It is also made up of a monocrystalline silicon plate, generally of a similar orientation to the "device" layer.
- the oxide layer 13 makes it possible to intimately bond the two silicon layers 11 and 12. In addition, it will also serve as a stopping layer during subsequent operations.
- the following step b) consists of growing a layer of silicon oxide on the surface of the wafer(s) 10, by exposing the wafer(s) to an oxidizing atmosphere at high temperature.
- the layer varies depending on the thickness of the “device” to be structured. It is typically between 1 and 4 ⁇ m. Of course other techniques can be used, to form an etching mask, a layer of resin, as in the following step c), can be sufficient, and if oxide is used, this can be deposited and not raw.
- step c) the exposed areas or, on the contrary, covered with resin are then exploited.
- a first etching process makes it possible to transfer the patterns defined in the resin in the previous stages into the previously raw silicon oxide.
- the silicon oxide is structured by dry plasma etching, directional and reproducing the quality of the sides of the resin serving as a mask for this operation.
- the silicon oxide is etched into the open areas of the resin, the silicon surface of the upper layer 11 is then exposed and ready for DRIE etching.
- the resin can be kept or not depending on whether you want to use the resin as an additional mask during DRIE etching.
- the silicon exposed and not protected by silicon oxide is etched in a direction perpendicular to the surface of the wafer (DRIE Bosch ® anisotropic etching).
- the patterns formed first in the resin, then in the silicon oxide, are "projected” into the thickness of the "device” layer 11.
- the etching leads to the silicon oxide layer 13 linking the two silicon layers 11 and 12, the etching stops. Indeed, like the silicon oxide serving as a mask during the Bosch ® process and resisting the etching itself, the buried oxide layer 13, of the same nature, also resists it.
- the silicon layer "device” 11 is then structured throughout its thickness by the defined patterns representing the components to be manufactured, now revealed by this DRIE engraving, namely a cam 1 in the example illustrated.
- step c) part of the upper silicon layer 2 is etched so as to form an internal anchoring element to the watch component, as well as a material bridge 8 connecting this anchoring element 7 to the internal wall of the watch component 1, in a non-critical zone of the internal wall of the component.
- the internal wall of the watch component is the wall of a hole arranged to receive an axis.
- the hole, shaped, allows the attachment residue not to interfere with the shaft cooperating with the silicon board.
- the internal wall could be another internal opening to the component, for example if it is skeletonized.
- step c) the process cannot be limited to DRIE etching during step c).
- the etching of step c) could just as easily be obtained by chemical etching in the same silicon-based material.
- step c several cams can be formed in the same wafer.
- step d a second photolithography operation similar to the first carried out during step c) is carried out on the back of the wafer 10 (therefore “handle” layer side 12).
- the wafer 10 is turned over, the resin is deposited there, then exposed through a mask.
- this second photolithography operation at least one narrow bridge 9 is formed across the rear of the watch component as well as a rear anchor 9' secured to the at least one narrow bridge 9, the rear anchor 9 ' being connected to the anchoring element 7 of the "device” layer by the silicon oxide layer linking the "device” layer and the "handle” layer.
- an integrated shadow mask is also formed during the DRIE etching of the “handle” layer during step d), so as to produce a deliberate and voluntary pattern of openings on the rear face, said openings allowing then to create a decoration elaborated by CVD or PVD deposition during a subsequent step.
- the area of exposed resin is then removed using a solvent, revealing the oxide layer previously formed and serving as a mask for deep dry etching, such as DRIE etching, which makes it possible to reveal the at least a narrow deck 9, the rear anchor 9' and the shadow mask.
- a solvent such as DRIE etching
- step e) to completely release the components the various layers of silicon oxide are then etched by means of wet etching with a solution based on hydrofluoric acid or even by hydrofluoric acid in vapor phase.
- the cams 1 formed are held to the anchoring element via the bridge of material 8, and the whole resting on the rear anchor connected to the at least one narrow bridge itself connected to a frame formed in the “handle” layer.
- step f) consists of subjecting various surface termination operations to the part released and still held by the fastener.
- the finishing stage may consist of depositing layers, structuring or decoration on the different faces of the watch component. These operations are functional (reinforcement, tribological, etc.) or aesthetic (coloring, pattern), by PVD or CVD.
- step d) the pattern developed during step d) via the shadow mask is also decorated via CVD or PVD deposits
- cam 1 as illustrated in figures 1a and 1b which, advantageously according to the invention, comprises a core based on silicon and a coating based on silicon oxide.
- the method can also include step h) intended to separate the watch component 1 from the wafer 10 by separating the component 1 from its anchoring element 8.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Micromachines (AREA)
- Springs (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Weting (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP22187006.6A EP4312084A1 (de) | 2022-07-26 | 2022-07-26 | Verfahren zur herstellung einer siliziumspirale |
| TW112116433A TWI869838B (zh) | 2022-07-26 | 2023-05-03 | 用於製造矽游絲的方法 |
| US18/197,302 US12474674B2 (en) | 2022-07-26 | 2023-05-15 | Method for manufacturing a silicon balance spring |
| JP2023090623A JP7564291B2 (ja) | 2022-07-26 | 2023-06-01 | ケイ素製のバランスばねを製造する方法 |
| CN202310927619.6A CN117452792A (zh) | 2022-07-26 | 2023-07-26 | 用于制造硅摆轮游丝的方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP22187006.6A EP4312084A1 (de) | 2022-07-26 | 2022-07-26 | Verfahren zur herstellung einer siliziumspirale |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP4312084A1 true EP4312084A1 (de) | 2024-01-31 |
Family
ID=82742952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP22187006.6A Pending EP4312084A1 (de) | 2022-07-26 | 2022-07-26 | Verfahren zur herstellung einer siliziumspirale |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12474674B2 (de) |
| EP (1) | EP4312084A1 (de) |
| JP (1) | JP7564291B2 (de) |
| CN (1) | CN117452792A (de) |
| TW (1) | TWI869838B (de) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1722281A1 (de) | 2005-05-12 | 2006-11-15 | ETA SA Manufacture Horlogère Suisse | Analoger Anzeiger aus kristallenem Material, Uhr mit solchem Anzeiger, und Herstellungsverfahren dafür |
| EP2145857A1 (de) | 2008-07-10 | 2010-01-20 | The Swatch Group Research and Development Ltd. | Verfahren zur Herstellung eines mikromechanischen Bauteils |
| JP2017044533A (ja) * | 2015-08-25 | 2017-03-02 | シチズン時計株式会社 | 時計部品の製造方法 |
| EP3181938A1 (de) | 2015-12-18 | 2017-06-21 | CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement | Herstellungsverfahren einer spiralfeder mit einer vorbestimmten steifigkeit durch wegnahme von material |
| WO2019166922A1 (fr) | 2018-03-01 | 2019-09-06 | Csem Centre Suisse D'electronique Et De Microtechnique Sa - Recherche Et Developpement | Procede de fabrication d'un spiral |
| WO2019180177A1 (fr) | 2018-03-21 | 2019-09-26 | Nivarox-Far S.A. | Procede de fabrication d'un spiral en silicium |
| WO2019180596A1 (fr) | 2018-03-20 | 2019-09-26 | Patek Philippe Sa Geneve | Procede de fabrication de composants horlogers en silicium |
| CH717124A2 (fr) * | 2020-02-12 | 2021-08-16 | Nivarox Sa | Procédé de fabrication d'un dispositif à lames flexibles monobloc en silicium, notamment pour l'horlogerie. |
| WO2021224804A1 (fr) * | 2020-05-07 | 2021-11-11 | Patek Philippe Sa Geneve | Procédé de fabrication d'un composant horloger en silicium |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2105807B1 (de) * | 2008-03-28 | 2015-12-02 | Montres Breguet SA | Monoblockspirale zur Erhöhung der Kurve und ihr Herstellungsverfahren |
| EP2410387B1 (de) * | 2010-07-19 | 2016-07-06 | Nivarox-FAR S.A. | Unruh mit Trägheitsregulierung ohne Einsatzteil |
| CN107615182B (zh) * | 2015-06-15 | 2020-02-07 | 西铁城时计株式会社 | 时钟的调速装置 |
| CH711828A2 (fr) | 2017-02-22 | 2017-05-31 | Csem Centre Suisse D'electronique Et De Microtechnique Sa - Rech Et Développement | Pièce d'horlogerie micromécanique multi-niveaux et son procédé de fabrication. |
| EP3557333B1 (de) * | 2018-04-16 | 2020-11-04 | Patek Philippe SA Genève | Herstellungsverfahren einer zugfeder für eine uhr |
| EP3865954B1 (de) * | 2020-02-12 | 2025-08-13 | Nivarox-FAR S.A. | Herstellungsverfahren einer monoblock-vorrichtung mit federzungen aus silizium, für uhrwerk |
-
2022
- 2022-07-26 EP EP22187006.6A patent/EP4312084A1/de active Pending
-
2023
- 2023-05-03 TW TW112116433A patent/TWI869838B/zh active
- 2023-05-15 US US18/197,302 patent/US12474674B2/en active Active
- 2023-06-01 JP JP2023090623A patent/JP7564291B2/ja active Active
- 2023-07-26 CN CN202310927619.6A patent/CN117452792A/zh active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1722281A1 (de) | 2005-05-12 | 2006-11-15 | ETA SA Manufacture Horlogère Suisse | Analoger Anzeiger aus kristallenem Material, Uhr mit solchem Anzeiger, und Herstellungsverfahren dafür |
| EP2145857A1 (de) | 2008-07-10 | 2010-01-20 | The Swatch Group Research and Development Ltd. | Verfahren zur Herstellung eines mikromechanischen Bauteils |
| JP2017044533A (ja) * | 2015-08-25 | 2017-03-02 | シチズン時計株式会社 | 時計部品の製造方法 |
| EP3181938A1 (de) | 2015-12-18 | 2017-06-21 | CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement | Herstellungsverfahren einer spiralfeder mit einer vorbestimmten steifigkeit durch wegnahme von material |
| WO2019166922A1 (fr) | 2018-03-01 | 2019-09-06 | Csem Centre Suisse D'electronique Et De Microtechnique Sa - Recherche Et Developpement | Procede de fabrication d'un spiral |
| WO2019180596A1 (fr) | 2018-03-20 | 2019-09-26 | Patek Philippe Sa Geneve | Procede de fabrication de composants horlogers en silicium |
| WO2019180177A1 (fr) | 2018-03-21 | 2019-09-26 | Nivarox-Far S.A. | Procede de fabrication d'un spiral en silicium |
| CH717124A2 (fr) * | 2020-02-12 | 2021-08-16 | Nivarox Sa | Procédé de fabrication d'un dispositif à lames flexibles monobloc en silicium, notamment pour l'horlogerie. |
| WO2021224804A1 (fr) * | 2020-05-07 | 2021-11-11 | Patek Philippe Sa Geneve | Procédé de fabrication d'un composant horloger en silicium |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2024016797A (ja) | 2024-02-07 |
| US20240036524A1 (en) | 2024-02-01 |
| TWI869838B (zh) | 2025-01-11 |
| US12474674B2 (en) | 2025-11-18 |
| TW202419987A (zh) | 2024-05-16 |
| JP7564291B2 (ja) | 2024-10-08 |
| CN117452792A (zh) | 2024-01-26 |
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