EP4391232A1 - Weitwinkel-impedanzanpassungsvorrichtung für eine gruppenantenne mit strahlungselementen und verfahren zum entwurf einer solchen vorrichtung - Google Patents

Weitwinkel-impedanzanpassungsvorrichtung für eine gruppenantenne mit strahlungselementen und verfahren zum entwurf einer solchen vorrichtung Download PDF

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Publication number
EP4391232A1
EP4391232A1 EP23217070.4A EP23217070A EP4391232A1 EP 4391232 A1 EP4391232 A1 EP 4391232A1 EP 23217070 A EP23217070 A EP 23217070A EP 4391232 A1 EP4391232 A1 EP 4391232A1
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EP
European Patent Office
Prior art keywords
antenna
impedance matching
plane
matching device
wide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP23217070.4A
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English (en)
French (fr)
Inventor
Raphael Gillard
Maria GARCIA VIGUERAS
Diego Bermudez-Martin
Hervé Legay
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Universite de Rennes 1
Thales SA
Institut National des Sciences Appliquees de Rennes
CentraleSupelec
Nantes Université
Original Assignee
Centre National de la Recherche Scientifique CNRS
Universite de Rennes 1
Thales SA
Institut National des Sciences Appliquees de Rennes
Universite de Nantes
CentraleSupelec
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Publication of EP4391232A1 publication Critical patent/EP4391232A1/de
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
    • H01Q15/0026—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices having a stacked geometry or having multiple layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H01Q5/30—Arrangements for providing operation on different wavebands
    • H01Q5/307—Individual or coupled radiating elements, each element being fed in an unspecified way
    • H01Q5/314—Individual or coupled radiating elements, each element being fed in an unspecified way using frequency dependent circuits or components, e.g. trap circuits or capacitors
    • H01Q5/335—Individual or coupled radiating elements, each element being fed in an unspecified way using frequency dependent circuits or components, e.g. trap circuits or capacitors at the feed, e.g. for impedance matching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/27—Adaptation for use in or on movable bodies
    • H01Q1/28—Adaptation for use in or on aircraft, missiles, satellites, or balloons

Definitions

  • the invention relates to the field of active antennas comprising a network of radiating elements capable of synthesizing one or more beams which can be pointed in a direction sweeping a large angular sector.
  • the invention relates in particular to the space domain and active antennas used on satellites in low orbit (called “LEO” satellites for “Low Earth Orbit” in English), belonging to a constellation of satellites intended to provide telecommunications services on the whole Earth.
  • LEO low orbit
  • These constellations use either L- or S-band frequency bands or Ku-, Ka- or Q/V-band frequency bands for high-speed telecommunications systems.
  • the invention relates more precisely to a wide-angle impedance matching device for such an active antenna as well as a method for designing such a device.
  • Active antennas installed on LEO satellites are made up of a network of radiating elements, connected to amplifiers and a beamforming device.
  • the beamformer distributes to the different radiating elements one or more radiofrequency signals after application of a specific phase and amplitude control making it possible to synthesize a beam in a given direction, and to direct the radiation of this or these radiofrequency signals.
  • the beamformer combines one or more radio frequency signals received by the different radiating elements after application of specific phase and amplitude control to optimize reception in a given direction.
  • these angular sectors are typically between ⁇ 55°.
  • the network mesh, and therefore the maximum size of the radiating elements must therefore be less than 0.6 ⁇ in this case.
  • These small radiating elements are characterized by significant mutual coupling between the radiating elements of the same network.
  • This mutual coupling between radiating elements combined with the amplitude and phase supply law assigned to the different radiating elements to synthesize a beam in a given direction, contributes to modifying the active impedance of the radiating elements as a function of the angle of target depointing for the beam.
  • the reflected signal results from the combination of the signal reflected by the radiating element alone and all the signals that are coupled by all the radiating elements adjacent, when all the radiating elements are supplied with the specified amplitude and phase law.
  • this mismatch can even be total in certain directions, and it is then not possible to point a beam in very off-point directions. We then speak of direction of blindness or “Scan Blindness” in English.
  • a technical problem to be solved in this context thus consists of stabilizing the active impedance of the radiating elements of an array antenna whatever the angle of depointing of the beam.
  • WAIM devices can be classified based on their type, in which one can find all-dielectric devices, single-layer metasurfaces, multi-layer metasurfaces and finally 3D devices.
  • the first concept of a WAIM device was proposed by the authors of [1]. They proposed to correct the dispersion of the susceptance of the active input impedance, caused by the mutual coupling between the elements of the network, by means of a dielectric layer. This layer can be considered as a pure susceptance which compensates for the dispersion of that of the elements of the network during depointing.
  • these layers have limited performance, and the effect of the layer is mainly observed for H-plane scanning, improving the maximum antenna defocusing angle of 27°.
  • such devices are not capable of acting with the E plane independently. They do not in fact have enough degrees of freedom to carry out effective joint optimization in both planes.
  • these layers are dimensioned at a given frequency and, although they do not implement a resonant mechanism, their bandwidth performance is limited.
  • these layers being made of dielectric materials, are limited to the materials available and have the disadvantages inherent to these materials, such as intrinsic losses, degassing in space, or high sensitivity to temperature.
  • a final type of WAIM device concerns the use of 3D structures as described for example in [6] which presents a device which combines two orthogonal printed structures, themselves positioned perpendicular to the plane of the radiating aperture (assumed horizontal by convention ).
  • the particularity of this solution is that the two orthogonal vertical layers of the device make it possible to act on the scanning in the H and E planes relatively independently. Thanks to this, the angular range of the scan in the E plane is improved by 10° while that in the H plane is improved by 39°.
  • This work shows the benefit of positioning metallic elements perpendicular to the radiating surface (here vertically).
  • the first is due to the fact that the two parts of the WAIM device are vertical, which does not allow the two scanning planes to be perfectly separated. This “coupling” effect is further accentuated here by the overlapping between the two orthogonal patterns (the second fitting into the first with a partial overlap between the two).
  • the second reason, a direct consequence of the first, is that this structure only works for a single polarization linear and cannot, by its nature, be extended to bipolarization. Indeed, it is not possible in the current state to apply an invariance by rotation of 90° in the horizontal plane without losing the capacity, even if imperfect, to independently adjust the adaptation in the scanning planes E and H.
  • the structure requires a complex manufacturing process with multiple layers of partially metallized substrates mounted orthogonally. In addition, using dielectric materials, it retains the same disadvantages as the solutions mentioned previously.
  • Impedance matching devices are also known as described in references [7] and [8].
  • a new type of wide-angle impedance matching device is proposed based on a first transmission screen dimensioned to adapt the active impedance of the array antenna in the H plane for a component of the electric field in linear polarization and on the addition of vertical metal pillars making it possible to cancel the mismatch in the E plane without effect on the electric field in the H plane.
  • the transmission screen is a structure composed of one or more dielectric layers.
  • the transmission screen is a structure composed of single-layer or multi-layer meta-surfaces on which a periodic grid of metallic patterns is arranged.
  • the transmission screen is a periodic grid of several cells, each cell comprising a support frame and at least one internal interconnection to said support frame, said support frame being inscribed in a prism, having a given Z' axis, said prism comprising faces connected together by edges, oriented along the axis of the prism Z', said support frame comprising corner elements, each corner element having an edge coinciding with one of said edges of the prism, the corner elements being arranged so that the support frame has, on each face of the prism, a slot extending along the axis of the prism Z'; and each internal interconnection comprises N inductive rods each comprising two ends, the inductive rods each having a first end connected to one of said edges of the support frame, the second ends of the inductive rods being connected together at a connection point of rods, said rod connection point being positioned substantially at the center of said support frame in a plane orthogonal to the axis of the prism Z',
  • the metal tips are positioned in the extension of each edge of each of the cells.
  • a metal tip of said assembly is positioned on said rod connection point.
  • the metal tips are arranged, at least partially, on the surface of the transmission screen opposite the first surface.
  • the subject of the invention is an antenna device comprising an array antenna with radiating elements capable of radiating a field of transverse electromagnetic waves and a wide-angle impedance matching device according to the invention and positioned on said array of elements radiant.
  • the wide-angle impedance matching device is positioned at a non-zero distance from the array of radiating elements.
  • the wide-angle impedance matching device is positioned in contact with the network of radiating elements.
  • the second step of sizing the set of metal tips consists of at least sizing the length of the tips.
  • the first step of sizing the transmission screen (103) consists of at least sizing at least one parameter among: the dimension of the inductive rods, the dimension of the slots, the position of the inductive rods according to the axis of the prism Z', the number of internal interconnections.
  • the first sizing step further comprises sizing the distance between the array of radiating elements and the impedance matching device.
  • FIG. 1 shows a diagram of a wide-angle impedance matching device according to one embodiment of the invention.
  • an active antenna 101 comprising a network of radiating elements arranged in a plane P parallel to the plane (O xy) of the mark.
  • an impedance matching device 102 is placed at a distance d WAIM which may be non-zero or equal to 0.
  • the impedance matching device 102 is fixed in contact with the network of radiating elements in the plane P.
  • the assembly formed by the active antenna 101 and the impedance matching device 102 can be manufactured in a single piece.
  • a spacer for example a honeycomb structure, is used to fix the impedance matching device 102 on the active antenna 101.
  • the spacer is designed so as to correspond to a layer equivalent to air from the point of view of the propagation of electromagnetic waves.
  • the adaptation device is designed to allow the antenna beam to be defocused over a wide angular sector (at least up to 50°) while maintaining the active reflection coefficient of the radiating elements below -10 dB.
  • the device 102 is designed to operate in a linear bipolarization configuration (H and V) and for depointing in any azimuthal plane ⁇ .
  • the device 102 is entirely metallic, which makes it possible to keep the insertion losses at a low level and to avoid the use of potentially heavy and expensive dielectric materials, which also have the other associated disadvantages discussed above. (like degassing in a vacuum).
  • the proposed structure is three-dimensional, which offers many degrees of freedom for its optimization.
  • the device 102 consists of two cascaded elements: a periodic grid of TEM cells 103 positioned parallel to the radiating aperture of the active antenna at a distance d WAIM from it and a network of metal tips 104 orthogonal to the grid (i.e. oriented in the z direction) and bristling on the face opposite the radiating opening.
  • the metal tips 104 are placed facing the antenna or distributed on the two opposite faces of the TEM cell grid.
  • FIG. 2 And 3 An example of a TEM cell is shown in figures 2 And 3 .
  • the TEM cell is also described in the French patent application FR3095303 .
  • FIG. 2 shows an example of a cell 200 with a square section made up of four metal walls of thickness t and width p. Each wall has a lengthwise slot having a width w x or w y depending on the side of the cell.
  • the cell 200 may have a section of different shape, for example hexagonal.
  • the cell 200 includes an internal interconnection 300 in the shape of a cross making it possible to carry out reactive loading, as illustrated in Figure 1.
  • Figure 3 The internal interconnection 300 has rotational symmetry. It is electrically conductive to form an electrical discontinuity in the cell 200.
  • the cross 300 is formed of two electrically conductive rods which form an inductive load.
  • each cell 200 comprises a support frame and one (or more) interconnection 300 internal to the support frame.
  • the support frame is inscribed in a prism, having a given axis Z'.
  • the prism has a square section.
  • Each internal interconnection comprises inductive rods each comprising two ends, the inductive rods each having a first end connected to one of said edges of the support frame, the second ends of the inductive rods are connected together at a connection point of rods, the rod connection point is positioned substantially in the center of the support frame in a plane orthogonal to the axis of the prism Z'.
  • the internal interconnection includes four rods and is cross-shaped.
  • FIG 4 shows the basic structure of the impedance matching device of the figure 1 .
  • This structure is composed of a TEM 200 cell on which metal tips 400 are arranged at the four corners of the cell.
  • the metal tips are arranged orthogonally to the xOy plane which is parallel to the transverse plane of the cell and to the radiating aperture of the antenna.
  • the metal tips are rods of constant circular or square section having predetermined dimensions.
  • FIG. 5 shows a variant of the structure of the figure 4 for which an additional metal tip 500 is arranged in the center of the cell in attachment with the internal interconnection 300.
  • the internal interconnection structure 300 has a pyramidal shape, that is to say that the rods d
  • the interconnection which forms the arms of the cross has a non-zero angle with respect to the transverse plane xOy of the cell. This shape is chosen in particular when the device is manufactured by an additive manufacturing technique.
  • the periodicity of the grid of the TEM cells coincides with that of the network of radiating elements.
  • a grid period of TEM cells corresponding to a submultiple of the period of the antenna array i.e. such that a period of the array coincides with an integer number of periods of the grid
  • the capabilities of the TEM cell in terms of miniaturization facilitate such an option.
  • the metal tips are arranged on the grid of TEM cells so as to be at the intersection of the respective antisymmetry planes of the electric field radiated by the antenna for scanning in the H plane, for two different linear polarizations horizontal and vertical . This point will be explained in more detail later.
  • the device according to the invention is dimensioned so as to dissociate the impedance adaptation for scanning the antenna in the H plane from that for scanning the antenna in the E plane and this for two linear orthogonal polarizations.
  • the device according to the invention can be designed according to a two-phase design process.
  • the first design phase consists of sizing the TEM cell grid so as to optimize the impedance matching for scanning in the H plane.
  • the optimization consists of adjusting at least one parameter among the position d WAIM of the grid in relation to the radiating opening, its dimensions as well as the geometric pattern and the dimensions of the interconnection structure which carries out the reactive loading of the cell.
  • the optimization is carried out so that the TEM cell has the appropriate input impedance to minimize the active reflection coefficient on the antenna ports, regardless of the depointing angle in that plane.
  • the multiplicity of degrees of freedom available offers numerous possibilities for carrying out this adaptation.
  • this first optimization phase is carried out using an equivalent electrical circuit.
  • the impedance matching device is modeled as a load at a distance d WAIM from the antenna.
  • An objective of the optimization is to determine the load for which the active reflection coefficient of the antenna is minimal for the interval of defocusing angles considered and possibly for a given frequency range. Once the desired loading is determined, it is synthesized into a real component.
  • FIG. 6 shows an example of an equivalent electrical diagram of a TEM cell of the type described in Figure 3 .
  • the interconnection structure 300 which carries out the reactive loading of the cell is modeled by an impedance Z x ( ⁇ ), where ⁇ is the offset angle.
  • Z x impedance
  • ⁇ the offset angle
  • two sections of the TEM cell of respective lengths I 1 and I 2 are modeled by transmission lines with parameters Z 1 ( ⁇ ), ⁇ 1 ( ⁇ ), Z 2 ( ⁇ ), ⁇ 2 ( ⁇ ).
  • the Z cap impedances ( ⁇ ) model the effect of discontinuities between the ends of the cell and the air.
  • the impedances Z 0 ( ⁇ ) correspond to the propagation of waves in a vacuum.
  • the sizing parameters of the cell are, in particular, the sizes of the inductive rods of the interconnection structure, their diameter, the width of the slots on the walls of the cell, the lengths l 1 and l 2 .
  • interconnection structures can be arranged in cascade to carry out several reactive loadings and increase the number of optimization parameters.
  • the addition of orthogonal metal tips on the optimized grid does not modify the adaptation already carried out for the H plane, since the points are placed in the antisymmetry planes of the structure associated with this H plane scan.
  • the fact that the tangential component of the electric field is necessarily zero in such planes guarantees that the Introduction of a perfect conductor at this location will not modify the field distribution observed for the grid alone.
  • such a conductor will have a significant effect on the distribution of the field for a scan in the E plane, since the antisymmetry planes are no longer the same for this scan. Consequently, the introduced conductor can be used to optimize the adaptation in the E plane, without modifying the adaptation previously carried out in the H plane thanks to the cell grid alone.
  • FIG. 7 shows several antisymmetry planes P_ V-ant1 , P_ V-ant2 , P _V-ant3 , of the TEM cell grid for scanning in the H plane and for a vertical linear polarization V (along the y axis). These are planes perpendicular to the electric field E and therefore parallel to the plane xOz passing through the corners of the cells or through their centers. In theory, a perfect conductor intended to perform impedance matching for scanning in the E plane can be placed anywhere in these planes without modifying the optimization made for the H plane.
  • FIG 8 shows several antisymmetry planes P_ H-ant1 , P_ H-ant2 , P_ H-ant3 , P_ H-ant4 this time for a horizontal linear polarization H (along the x axis). These planes are this time parallel to the yOz plane passing through the corners of the cells or their centers.
  • the metal tips must be arranged at the intersection of the antisymmetry planes relating to the vertical polarization (represented in Figure Figure 7 ) and antisymmetry planes relating to horizontal polarization (represented in Figure figure 8 ). It is for this reason that metal blades extending over an entire side of a cell in a plane of antisymmetry for one of the two polarizations do not verify this condition and do not ensure bipolarization operation.
  • the impedance matching device described above can be manufactured entirely of metal, for example via an all-metal additive manufacturing process or from dielectric materials metallized after the fact. This has the advantage of reducing manufacturing costs, reducing losses and eliminating the disadvantages associated with the use of a dielectric material in the case where the device is made directly from metal.
  • FIG. 9 illustrates on a simple example of an electromagnetic field E propagated in a waveguide G of square or rectangular section, the definition of a plane of symmetry P sym and of a plane of antisymmetry P ant .
  • the electric field is represented schematically by arrows of length proportional to its amplitude.
  • the P ant antisymmetry plane corresponds to a perfect electric conductor, that is to say that a conductor can be placed there without changing the configuration of the electric field.
  • THE figures 10 and 11 illustrate the definition of the antisymmetry planes for the TEM cell grids according to the invention.
  • FIG. 10 shows an example, in top view, of a grid of four TEM cells C 1 , C 2 , C 3 , C 4 for scanning along the plane H (xOz) and for polarization of the wave along the axis Oy.
  • This structure has five planes of antisymmetry Pant1 , Pant2 , Pant3 , Pant4 , Pant5 which pass through the sides and centers of the cells and are parallel to the Ox axis.
  • the electric field E varies in phase along the axis Ox. It is identical on both halves (left and right) of the same cell and on two consecutive cells of the same line. In other words, the distribution of the electric field is identical between cells C 1 and C 2 on the one hand and between cells C 3 and C 4 on the other hand.
  • the antisymmetry planes are therefore planes along the Ox axis.
  • FIG. 11 shows, on the same example of a grid of four TEM cells, the distribution of the electric field for a scan in the plane E (xOy) always for a polarization of the wave along the Oy axis.
  • the electric field varies in phase along the axis Oy. It is the same on the two halves (top and bottom) of the same cell and on two consecutive cells of the same column. In other words, the electric field is identical between cells C 1 and C 3 on the one hand and between cells C 2 and C 4 on the other hand.
  • the planes P sym1 , P sym2 , P sym3 , P sym4 , P sym5 are planes of symmetry. There is no plane of antisymmetry in this configuration.
  • the network of TEM cells can be replaced by an impedance matching device of the prior art based for example on single-layer or multi-layer metasurfaces.
  • the metal tips allowing impedance adaptation for scanning in the E plane must be placed at the intersection of the antisymmetry planes. for both polarizations.
  • Such antisymmetry planes are defined according to the chosen structure.
  • FIG. 12 shows the five antisymmetry planes P' ant1 , P' ant2 , P' ant3 , P' ant4 , P' ant5 for a printed structure based on patches P1,P2,P3,P4, always for polarization along the axis Oy.
  • the variation of the electric field is also represented in the form of arrows.
  • the antisymmetry planes for polarization along the Ox axis are obtained by rotation of 90° applied to the antisymmetry planes of the Figure 13 .
  • the impedance matching device for scanning in the H plane can also be a structure composed of one or more dielectric layers.
  • FIG. 13 shows a second embodiment of the invention in which the TEM cells are replaced by structures based on metasurfaces comprising at least one dielectric layer on which periodic metallic patterns M 1 , M 2 , M 3 are positioned. All of the patterns form a grid whose dimensions and parameters are chosen so as to adapt the impedance of the antenna for scanning in the H plane.
  • An array of RPM metal tips is then arranged orthogonal to the pattern grid.
  • the metal tips are arranged at the intersection of the antisymmetry planes of the electric field, for scanning in the H plane and for the two linear polarizations along the x and y axes.
  • the RPM metal tip array is optimized to match the antenna impedance for E-plane scanning.
  • FIG 14 shows a variant of the embodiment of the invention described in figure 13 .
  • additional metal tips PM are positioned at the centers of each pattern which also belong to the planes of antisymmetry of the electric field for the two linear polarizations along the x and y axes.

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EP23217070.4A 2022-12-22 2023-12-15 Weitwinkel-impedanzanpassungsvorrichtung für eine gruppenantenne mit strahlungselementen und verfahren zum entwurf einer solchen vorrichtung Pending EP4391232A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR2214203A FR3144427A1 (fr) 2022-12-22 2022-12-22 Dispositif d'adaptation d'impédance à grand angle pour antenne réseau à éléments rayonnants et procédé de conception d'un tel dispositif

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EP4391232A1 true EP4391232A1 (de) 2024-06-26

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US (1) US20240213664A1 (de)
EP (1) EP4391232A1 (de)
CA (1) CA3223986A1 (de)
FR (1) FR3144427A1 (de)

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