EP4581900A1 - Élément céramique fonctionnel monolithique et procédé d'établissement d'une connexion par contact pour une céramique fonctionnelle - Google Patents

Élément céramique fonctionnel monolithique et procédé d'établissement d'une connexion par contact pour une céramique fonctionnelle

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Publication number
EP4581900A1
EP4581900A1 EP23761531.5A EP23761531A EP4581900A1 EP 4581900 A1 EP4581900 A1 EP 4581900A1 EP 23761531 A EP23761531 A EP 23761531A EP 4581900 A1 EP4581900 A1 EP 4581900A1
Authority
EP
European Patent Office
Prior art keywords
ceramic
functional ceramic
functional
monolithic
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP23761531.5A
Other languages
German (de)
English (en)
Inventor
Stephan Bigl
Daniel Bretterklieber
Michael Krenn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Electronics AG
Original Assignee
TDK Electronics AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Electronics AG filed Critical TDK Electronics AG
Publication of EP4581900A1 publication Critical patent/EP4581900A1/fr
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/02—Details
    • H05B3/03—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/003—Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
    • H01C17/281—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals by thick film techniques
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible
    • H05B3/28—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
    • H05B3/283—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/343—Alumina or aluminates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/345—Refractory metal oxides
    • C04B2237/346—Titania or titanates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/74—Forming laminates or joined articles comprising at least two different interlayers separated by a substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/0288—Applications for non specified applications
    • H05B1/0294—Planar elements

Definitions

  • the present invention relates to a functional ceramic element, a method for producing a contact on a functional ceramic and the use of the element in a heating module.
  • Such heating modules are increasingly being used as heating registers in electric vehicles. Such use requires that the register be operated directly with the high-voltage battery (typically 200 - 800 V). The insulation strength must therefore be designed accordingly.
  • PTC elements are usually electrically contacted on two opposite sides using a conductor track.
  • the conductor track is supported by a substrate, which couples out the resulting heat on the other side.
  • the heat output that can be extracted depends heavily on the thermal path through the layer structure described above. Heat must travel from the point of origin (the PTC) via the contact and through the substrate to the extraction surface.
  • the PTC point of origin
  • Thermal and electrical considerations for optimizing the heating element are often subject to opposing arguments, ie state-of-the-art designs are compromise solutions between power density, thermal agility and insulation capacity or robustness and reliability.
  • the PTC element itself acts as a heat source when Joule heat is generated by current. However, this is not generated homogeneously in the material, but depending on the geometry and possible material inhomogeneities, the electric field distribution in the component can cause a temperature gradient.
  • the heat, starting from hotspots, must first reach the surface of the elements before it can be transported further. This can happen very slowly and sluggishly due to the relatively poor thermal conductivity of the PTC ceramic (usually ⁇ 5 W/mK).
  • the document DE 11 2017 006 124 T5 describes a corresponding electrical heating device according to the prior art with insulation layers between conductor tracks and cooling lame 11.
  • the document EP 1 182 908 A1 describes a similar PTC heating device with at least one PTC element and two contact plates that contact the PTC element.
  • a metal foil is provided, which is coated on both sides with adhesive. Isolation of the contact plates is not provided here.
  • One object of the present invention is to provide an improved functional ceramic element that can also be used in a heating module.
  • the present invention relates to a method for producing a contact with a functional ceramic, in particular a PTC ceramic or a method for producing a functional ceramic element, in particular a, preferably monolithic, thermistor element.
  • the method includes at least the steps described below.
  • a functional ceramic is provided.
  • the ceramic referred to below as functional ceramic is preferably a thermistor ceramic and even more preferably a PTC ceramic.
  • the functional or PTC ceramic can be provided in green state or sintered state.
  • the functional ceramic is preferably provided as a film in the green state, with the film having a small film thickness compared to the film surface. Only when sintered does the functional ceramic exhibit its desired functionality.
  • a green ceramic is also referred to as a functional ceramic, which only has functionality in the sintered state. The same applies to a PTC ceramic.
  • the functional ceramic can be any suitable
  • metal paste is applied to two opposing surfaces of the functional ceramic.
  • the metal paste is preferably applied with a thickness of a few micrometers or a few 100 nanometers.
  • the metal paste preferably comprises an electrically conductive metal such as nickel, cobalt, copper, silver, another noble metal or a metal alloy in powder form. Furthermore, the metal paste includes, for example, suitable suspending agents.
  • the metal paste can in particular not be applied flatly, but in a form that can be converted into comb-shaped metal structures by a sintering step.
  • the metal paste can be applied in particular in a comb structure.
  • the two comb structures are preferably applied to the opposite surfaces in such a way that the comb structures do not lie on top of one another, but are arranged offset.
  • the comb structures each include a continuous section as the main strand and sections branching off from it as secondary strands.
  • the metal paste can be applied, for example, by (screen) printing or by sputtering.
  • ceramic substrate green films are applied and laminated to the two opposite surfaces of the functional ceramic.
  • the ceramic substrate green films can comprise a similar ceramic material as the functional ceramic or another ceramic material.
  • the ceramic material which is formed from the ceramic substrate green sheets after sintering, is preferably electrically insulating and has good thermal conductivity.
  • the ceramic substrate green films are applied in such a way that they preferably cover the entire surface of the functional ceramic and the metal paste applied thereto.
  • the ceramic substrate green films are applied directly to the surface of the functional ceramic or applied to the metal paste applied thereon.
  • a layer stack which comprises the two ceramic substrate green films which enclose the functional ceramic in a sandwich-like structure. Structures made of metal paste are also arranged between the functional ceramic and the ceramic substrate green films, which serve to produce electrical contact with the functional ceramic.
  • the layer stack is sintered together to form the functional ceramic element. In a preferred embodiment, this is
  • Monolithic functional ceramic element “Monolithic” means that the functional ceramic element does not consist of different, individual elements, but of a single element. This means that no (sub-)elements need to be mechanically connected or glued.
  • the functional ceramic element is a monolithic thermistor element.
  • the functional ceramic element is preferably a thermistor element with a thermistor functionality.
  • the functional ceramic is then a ceramic with thermistor properties, in particular an NTC or preferably a PTC ceramic.
  • the monolithic functional ceramic element is formed by jointly sintering the functional ceramic to form a functional ceramic layer, the ceramic substrate green films to form electrically insulating ceramic layers and the metal paste to form electrically conductive metal structures.
  • the functional ceramic element formed in this way therefore includes the functional ceramic layer, the electrically insulating ceramic layers and the electrically conductive metal structures.
  • defects that arise when assembling a functional ceramic element from different sub-elements can be avoided. For example, cavities that can arise during bonding can be avoided. Furthermore, leakage or smearing of glue can be avoided. Furthermore, an incomplete connection between separate functional ceramic elements and insulating ceramic elements can be avoided.
  • the stability and time stability of the functional ceramic element can be increased.
  • the heat coupling between the individual layers is improved, so that when a functional ceramic layer designed as a thermistor layer is heated by applying an electrical voltage, the resulting heat can be easily released to the outside via the electrically insulating ceramic layers.
  • the ceramic layers are preferably made thin.
  • a functional ceramic film can contain several conventional functional ceramic stones, e.g. B. Replace PTC stones, each with significantly smaller surface dimensions.
  • the thin films also allow the formation of a homogeneous electric field even without a surface application of the electrically conductive structures and thus, in the case of a thermistor element, homogeneous heating of the thermistor element.
  • the functional ceramic element can still be easily produced using existing automated processes for producing multilayer ceramic elements.
  • the electrically conductive metal structures can be electrically contacted to the outside.
  • recesses are provided in the electrically insulating ceramic layers.
  • the recesses can be formed, for example, by incompletely covering the metal structures with ceramic foils or by later removing ceramic material.
  • the metal structures can then be electrically contacted, for example with wires.
  • the wires are, for example, soldered to the metal structures.
  • the metal structures can be electrically contacted, for example by means of clamping contacts. Other suitable contacting methods are also possible.
  • the metal structures preferably do not extend to the edge of the ceramic layers in order to form an area on the edges of the functional ceramic element which is not subjected to an electrical voltage even during operation.
  • the functional ceramic is provided in one embodiment as a functional ceramic film in the green state.
  • the functional ceramic is provided in particular as a film in the green state and the metal paste and the ceramic substrate green films are applied directly to the functional ceramic film in the green state. Preferably no further processing steps are carried out between the steps mentioned.
  • functional ceramic is provided as a film in the green state and the green functional ceramic is first sintered to form a functional ceramic layer. The metal paste and the ceramic substrate green films are then applied to the functional ceramic layer in the sintered state.
  • the functional ceramic is provided as a green film and sintered at high temperatures above 1000 ° C, preferably above 1300 ° C, before applying the metal paste and the ceramic substrate green films To form a functional ceramic layer.
  • the functional ceramic then preferably comprises an HTCC (high temperature cofired ceramics) ceramic material.
  • the metal paste Before sintering, the metal paste is preferably dried at an elevated temperature in order to evaporate a suspending agent or solvent.
  • the functional ceramic is provided in the sintered state.
  • the ceramic substrate green films preferably comprise an LTCC (low temperature cofired ceramics) ceramic material.
  • the subsequent joint sintering is preferably carried out at a lower temperature below 1000 ° C, preferably below 800 ° C.
  • the metal paste and the ceramic substrate green films are applied to the functional ceramic in the green state provided as a film in the green state.
  • the layer stack formed in this way is then sintered together.
  • the joint sintering is preferably carried out at a high temperature above 1000 ° C, preferably above 1300 ° C.
  • both the functional ceramic and the further ceramic layers preferably comprise an HTCC ceramic.
  • the ceramics can be sintered at the same temperature.
  • the creation of mechanical stresses during sintering can be reduced or avoided.
  • the functional ceramic film and the ceramic substrate green films have essentially the same composition.
  • the composition of the functional ceramic film and the ceramic substrate green films preferably only differs in the proportion of dopants in the composition.
  • dopants can be, for example, yttrium or manganese.
  • the electrical resistance of the ceramic material can be increased by a higher proportion of the dopants mentioned and an electrically insulating ceramic material can thus be provided.
  • the functional ceramic film and the ceramic substrate green films have the same ceramic base material, with the PTC functionality or the substrate function being adjusted via the choice of dopants and/or the concentration of the dopants is defined.
  • the formation of mechanical stresses during sintering can be reduced or reduced be avoided .
  • the thermal coupling between individual layers is improved by selecting similar materials.
  • the functional ceramic films are separated, for example, by cutting or punching.
  • Each individual functional ceramic film preferably has a rectangular shape with a dimension of at least 3 cm x 10 cm.
  • the thickness of the film is preferably a maximum of 150 pm.
  • the dimensions of the functional ceramic layer are then smaller in accordance with the usual sintering shrinkage.
  • the invention further relates to a monolithic functional ceramic element, in particular a monolithic thermistor element.
  • the functional ceramic element is preferably manufactured using the method described above. All features and embodiments that have been described in relation to the method can also apply to the functional ceramic element.
  • the functional ceramic element can be a thermistor element in all embodiments and exemplary embodiments.
  • the invention also relates to a monolithic functional ceramic element, preferably a monolithic thermistor element, which comprises at least the following layers which are laminated in a stacking direction perpendicular to an outer surface of the monolithic functional ceramic element.
  • the monolithic functional ceramic element comprises, on the one hand, a functional ceramic layer, preferably a PTC ceramic layer, with two opposing surfaces.
  • the monolithic functional ceramic element comprises two, electrically conductive metal structures with different polarities in the operating state, which are arranged in direct contact on one of the opposite surfaces of the functional ceramic layer.
  • direct contact here is that the electrically conductive metal structures rest directly on the surfaces of the functional ceramic layer and no further intermediate structures are formed.
  • the electrically conductive metal structures are also electrically connected to the electrically conductive functional ceramic layer. This means that an electric field can be applied to the functional ceramic layer via the electrically conductive metal structures. an electrical voltage can be applied.
  • the functional ceramic element comprises two electrically insulating ceramic layers, each of which is arranged on one of the opposite surfaces of the functional ceramic layer and the metal structures arranged thereon. The electrically insulating ceramic layers lie directly on the surface of the functional ceramic layer or of the metal structures.
  • the functional ceramic layer comprises or consists of an HTCC ceramic and the electrically insulating ceramic layers comprise or consist of an LTCC ceramic.
  • the electrically insulating ceramic layers in this embodiment preferably comprise an aluminum oxide ceramic.
  • the electrically insulating ceramic layers should also be good thermal conductors and consist of a material that has high thermal conductivity.
  • the functional ceramic layer and the electrically insulating ceramic layers each comprise or consist of an HTCC ceramic.
  • the functional ceramic layer and the electrically insulating ceramic layers then preferably have essentially the same ceramic composition.
  • the ceramics differ in one embodiment.
  • composition of the functional ceramic layer and the electrically insulating ceramic layers only by the proportion of dopants in the ceramic composition.
  • Such a functional ceramic element has a particularly high heat coupling between the individual layers, which is advantageous, for example, for use as a thermistor element in a heating module.
  • the functional ceramic layer comprises a barium titanate ceramic, which can further contain, for example, a strontium compound such as strontium oxide and/or a lead compound such as lead oxide and a dopant such as yttrium or manganese.
  • the functional ceramic layer has a maximum layer thickness of 150 ⁇ m.
  • the functional ceramic layer preferably has a smaller layer thickness of a maximum of 100 pm or maximum 50 pm.
  • the layer thickness should be at least 40 pm.
  • a homogeneous electric field can easily be generated in such a thin layer. Even with non-flat metal structures, for example in the form of a comb, it is possible to apply an electric field that is formed evenly in the entire area of the functional ceramic layer covered by the metal structures.
  • the electrically insulating ceramic layers have a maximum layer thickness of 200 ⁇ m.
  • the insulating ceramic layers preferably cover the entire functional ceramic layer along the two opposite surfaces. Due to the thin design of the layers can be the dimension of the entire
  • the thin insulating ceramic layers also enable good heat conduction to the outside of the functional ceramic element.
  • the functional ceramic element has a thickness of a maximum of 800 pm, preferably 500 pm, even more preferably 400 pm in a stacking direction of the layers mentioned.
  • the electrically conductive metal structures are formed in a comb structure.
  • the comb structures each include a continuous section and several sections branching off from the continuous section.
  • the electrically conductive metal structures are preferably not arranged one above the other in the stacking direction, so that during operation all line paths in the functional ceramic layer, via which electrical current is conducted through the functional ceramic layer, run diagonally. Despite the small thickness of the functional ceramic layer, a minimal conduction path through the layer of preferably at least 4 mm can be provided.
  • the minimum conduction path i.e. the shortest path on which current can flow between two metal structures with different polarities during operation, is preferably pronounced in the functional ceramic layer between two branching sections of one of the electrically conductive metal structures.
  • the maximum current flow can also be reduced when a certain electrical voltage is applied to the ceramic layer. This means, for example, that the energy consumption of a connected battery can be reduced. Furthermore, inrush current peaks that are for the battery or represent a high load for connected switching electronics, can be reduced.
  • the present invention further relates to a heating module that includes one or more of the previously described monolithic thermistor elements.
  • the described improved heat coupling, heat conduction and heat transfer properties of the monolithic thermistor element can increase the efficiency of the heating module.
  • the heating module is, for example, a lamella heating module, which comprises several of the monolithic thermistor elements described, on the surfaces of which lamellas are applied, which are formed by one Heat fluid flows through.
  • the thermal fluid is heated during operation by the thermistor elements.
  • a corresponding heating module can be used, for example, in the automotive sector and should preferably have a heat output of at least 5 kilowatts.
  • Figure 1 Schematic representation of the manufacturing process of a first exemplary embodiment of a monolithic thermistor element.
  • Figure 2 Cross section through a first exemplary embodiment of the monolithic thermistor element with the minimum line path shown.
  • Figure 3 Microscopic image of a section in the edge area of the first exemplary embodiment of the monolithic thermistor element.
  • Figure 4 Microscopic image of a cross section through a second exemplary embodiment of a monolithic thermistor element.
  • Figure 5 Top view of an exemplary embodiment of the monolithic thermistor element with external contacting by wires.
  • Figure 6 Change in the cold resistance of a PTC ceramic layer of an exemplary thermistor element according to the invention as a function of the number of cycles. In each cycle, 450 volts DC is applied to the thermistor element for 5 seconds and then cooled for 30 seconds.
  • FIG. 7 Switch-on current curve of the exemplary thermistor element according to the invention.
  • the current flow I through a PTC ceramic layer is shown when a direct voltage U of 450 volts is applied as a function of the time t from switching on.
  • Figure 8 Photograph of a heating module comprising monolithic thermistor elements.
  • FIG. 1 shows the production of a first exemplary embodiment of a functional ceramic element according to the invention.
  • a functional ceramic element according to the invention.
  • it is in particular a monolithic thermistor element 100.
  • a PTC ceramic film 1 is used
  • the expansion of the Large PTC ceramic film 1 is, for example, 4 inches x 4 inches. Alternatively, the expansion can be any other, preferably larger, dimension.
  • the thickness of the PTC ceramic film 1 is between 40 and 250 micrometers, preferably between 50 and 150 micrometers, even more preferably less than 100 micrometers.
  • PTC ceramic films 2 with a smaller expansion can be separated from the large PTC ceramic film 1 provided.
  • the individual PTC ceramic films 2 are punched or cut out of the large PTC ceramic film 1, for example.
  • three PTC ceramic films 2 are separated from the exemplary large PTC ceramic film 1 with an area of 4 inches x 4 inches.
  • the isolated PTC ceramic films 2 preferably have a rectangular shape with an extension of approx. 3 cm x 10 cm on .
  • the PTC ceramic films 2 can also have dimensions larger than 3 cm x 10 cm.
  • the PTC ceramic films 2 produced in this way have a significantly larger surface area and a smaller thickness compared to conventionally used PTC ceramic stones.
  • a monolithic thermistor element comprising a single PTC ceramic film 2 can be produced, while conventional processes use a large number of PTC ceramic bricks.
  • the thickness of the thermistor element can be reduced by using the thin PTC ceramic film 2.
  • the isolated PTC ceramic films 2 are sintered in a subsequent step.
  • the PTC ones are preferred Ceramic foils 2 for producing a desired one
  • Thermistor functionality sintered at a high temperature for example between 1240°C and 1320°C.
  • the expansion of the PTC ceramic film 2 is reduced by an amount typical of sintering shrinkage.
  • Sintering converts the green PTC ceramic film 2 into a sintered functional ceramic layer, namely a PTC ceramic layer 3.
  • the surface area of the PTC ceramic layer 3 is, for example, 26 mm x 78 mm and preferably not more than 3 mm x 9 mm.
  • Electrically conductive metal structures 5 are then applied to the sintered PTC ceramic layer 3.
  • a metal paste 4 is printed or sputtered onto the two opposite surfaces of the PTC ceramic layer 3.
  • the metal paste 4 is preferably applied in the form of a comb.
  • the metal paste 4 includes, for example, nickel, copper, aluminum, a noble metal or an alloy of individual metals mentioned.
  • the comb comprises a continuous section 6, essentially the main strand of the comb, from which several sections 7 branch off, preferably at a right angle, essentially the secondary strands of the comb.
  • the metal paste 4 is therefore not applied flatly to the surfaces.
  • the advantageous thin layer thickness of the PTC ceramic layer 3 according to the invention makes it possible in the operating state Formation of a uniform electric field in the PTC ceramic layer 3. In particular, this leads to electrical current being uniformly converted into thermal energy in the PTC ceramic layer 3 in the operating state.
  • the thermal energy is released into the environment via the additional ceramic layers 10, which preferably have good thermal conductivity.
  • the heat release to the environment is further promoted by the good heat coupling between the individual, jointly sintered layers of the monolithic thermistor element 100.
  • the two combs on the two surfaces of the PTC ceramic layer 3 are structured so that they do not lie on top of each other in a direction perpendicular to the surface of the PTC ceramic layer 3.
  • D. H . viewed from a direction from one of the surfaces of the PTC ceramic layer 3, in the theoretical case of a transparent PTC ceramic layer 3, both comb structures would be visible next to each other.
  • the main strands 6 of the combs are applied to different sides of the respective surfaces.
  • the branching sections 7 are each applied next to each other with recesses in between so that the sections 7 of the two combs do not lie on top of each other, but each point in the direction of the other comb structure.
  • the conduction path 8 in the PTC ceramic layer 3 is maximized as shown in Figure 2.
  • the line path 8 refers to the route over which an electrical current flows in the PTC system in the operating state. Ceramic layer 3 would cover.
  • the shortest line path 8 in the PTC ceramic layer 3 between two metal structures 5 should preferably be at least 4 mm. This shortest line path 8 is preferably formed between two adjacent branching sections 7, each of one of the two electrically conductive metal structures 5.
  • the minimum conduction path 8 described enables the application of high electrical voltages, for example in the range between 400 and 1000 volts, preferably in the range over 800 volts.
  • the applied metal paste 4 is then dried at a temperature of, for example, at least 180° C. over a period of, for example, at least 30 minutes.
  • a ceramic substrate green film 9 is applied to both surfaces of the PTC ceramic layer 3, each of which covers the entire surface of the PTC ceramic layer 3 and the metal paste 4 applied thereto.
  • the thickness of the structure made of metal paste 4 is compared to the thickness of the ceramic layers or - foils is negligible and is in the micrometer or sub-micrometer range.
  • the PTC ceramic layer 3 preferably comprises a high-temperature sintered HTCC ceramic
  • the further ceramic layers 10, which are formed from the ceramic substrate green films 9, preferably comprise an LTCC ceramic material that is sintered at comparatively lower temperatures.
  • the material of the PTC ceramic layer 3 is, for example, a barium titanate ceramic or a similar material, which can also include other metals such as lead or strontium. However, it is preferably a lead-free ceramic.
  • the ceramic of the PTC ceramic layer 3 is preferably doped with other elements such as yttrium and/or manganese.
  • the LTCC ceramic of the further ceramic layers 10 is, for example, an aluminum oxide ceramic or a similar material that is preferably good heat conductor but electrically insulating.
  • the ceramic substrate green films 9 preferably have a film thickness between 50 and 200 micrometers.
  • the entire layer stack is pressed and sintered together. Sintering is preferably carried out at low temperatures, for example between 850 and 950 ° C under an air atmosphere, so that the ceramic substrate green films 9 are converted into ceramic layers 10, which are electrically insulating, and the metal paste 4 into electrically conductive metal structures 5.
  • the lower sintering temperature during joint sintering ensures that the PTC ceramic layer 3 is not or hardly oxidized, so that the desired thermistor functionality is retained.
  • the process can be slightly modified.
  • All steps that are not described again in detail are carried out analogously to the previous procedure.
  • the PTC ceramic film 2 is not sintered before the metal paste 4 and the ceramic substrate green films 9 are applied. Rather, the metal paste 4 and the ceramic substrate green films 9 are applied to the non-sintered, green PTC ceramic film 2.
  • the ceramic substrate green films 9 have a similar material to PTC ceramic film 2.
  • the ceramic substrate green films 9 therefore, like the PTC ceramic film 2, comprise an HTCC ceramic.
  • the PTC ceramic film 2 and the ceramic substrate green films 9 preferably comprise essentially the same ceramic material, which only differs in the amount of doping elements added.
  • a suitable material would be, for example, a barium titanate ceramic that is provided with a boron nitrite sintering additive.
  • the thermistor functionality of the PTC ceramic layer 3 or The electrically insulating property of the further ceramic layers 10 is adjusted by the amount of doping with other elements such as yttrium and/or manganese.
  • two different HTCC ceramics can also be selected for the PTC ceramic film 2 and the ceramic substrate green films 9.
  • the entire stack comprising the foils 2 and 9 and the metal paste 4, is sintered together at a high temperature.
  • An exemplary sintering temperature is between 1000 and 1300 ° C.
  • the stack is sintered at 1150 °C.
  • the formed monolithic thermistor element 100 can be reoxidized by heating to 600 to 800 ° C under an air atmosphere to produce the thermistor functionality of the PTC ceramic layer 2.
  • FIG. 4 A scanning electron microscope image of a cross section through a correspondingly produced monolithic thermistor element 100 is shown in Figure 4.
  • wires 11, for example, can then be connected to the electrically conductive structures 5, as shown in Figure 5.
  • the wires 11 are soldered to a surface of the electrically conductive structures 5.
  • recesses 12 can be provided in the electrically insulating ceramic layers 10 or can be formed subsequently at appropriate locations by removing the ceramic material. These recesses 12 are preferably formed at corners or close to the corners of the monolithic thermistor element 100 .
  • the monolithic thermistor element 100 produced using the method described can be made significantly thinner than previously known thermistor elements. Due to the layer structure described and the joint sintering of the entire layer stack to form a monolithic element, additional assembly steps such as pressing and gluing individual components are no longer necessary. Through Eliminating these steps also avoids or minimizes possible assembly errors such as the creation of gaps or cavities between the individual elements.
  • the reliability of the thermistor element 100 in operation and the stability of its functionality over time can thus be increased.
  • the method described enables flexible production of thermistor elements 100 of different dimensions and with various desired electrical properties using established automated manufacturing processes from multilayer ceramic technology.
  • Figure 6 shows an example diagram of the cold resistance of the PTC ceramic layer 3 as a function of the number of switching cycles.
  • a direct voltage of 450 volts is applied to the PTC ceramic layer for 5 seconds and the current is then switched off and the thermistor element 100 is cooled for 30 seconds.
  • the cold resistance is measured in the cooled state.
  • the next switching cycle then begins.
  • the diagram shows that the cold resistance hardly depends on the number of switching cycles, so that the properties of the thermistor element 100 do not change, for example, due to the layers becoming detached.
  • the fluctuations shown are caused by the short cycle times, which prevent the establishment of thermal equilibrium.
  • Figure 7 shows another diagram showing the inrush current curve for a monolithic thermistor element 100 according to the invention.
  • the thermistor element with a room temperature resistance of about 25 kQ reaches a
  • the applied direct voltage of 450 volts reaches the maximum inrush current after about 50 ms (milliseconds). minimal electrical resistance.
  • the voltage curve is also shown in steps in the diagram.
  • the monolithic thermistor element 100 according to the invention is preferably used in a heating module 200.
  • the heating module 200 which is shown in FIG. 8, comprises several, for example six, thermistor elements 100.
  • Laminate structures 201 are then applied to the surface of the electrically insulating but highly heat-conducting ceramic layers 10, through which a fluid heating medium is guided.
  • the heating medium is heated as it flows through the lamellar structures 201 and can then release the heat to the areas to be heated.
  • Corresponding heating modules are used, for example, in the automotive sector to heat the passenger cell or in the electro-automotive sector to heat the battery to a uniform, desired temperature, for example 40 ° C. used.
  • the heating output of such a heating module 200 should preferably be at least 5 kilowatts.
  • the thermistor element 100 Due to the monolithic structure of the thermistor element 100, there are no special requirements such as a high mechanical driving force when assembling the heating module 200.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Thermistors And Varistors (AREA)
  • Resistance Heating (AREA)

Abstract

La présente invention concerne un procédé pour établir une connexion par contact pour une céramique fonctionnelle (3) comprenant les étapes consistant à : fournir une céramique fonctionnelle (2, 3), appliquer une pâte métallique (4) sur deux surfaces opposées de la céramique fonctionnelle (2, 3), stratifier des films verts de substrat céramique (9) sur les deux surfaces opposées de la céramique fonctionnelle (2, 3) sur la pâte métallique (4), fritter conjointement la céramique fonctionnelle (2, 3), les films verts de substrat céramique (9) pour former des couches céramiques électriquement isolantes (10), et la pâte métallique (4) pour former des structures métalliques électroconductrices (5). La présente invention concerne également un élément céramique fonctionnel monolithique, en particulier produit selon le procédé décrit.
EP23761531.5A 2022-08-30 2023-08-25 Élément céramique fonctionnel monolithique et procédé d'établissement d'une connexion par contact pour une céramique fonctionnelle Pending EP4581900A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102022121865.1A DE102022121865A1 (de) 2022-08-30 2022-08-30 Monolithisches Funktionskeramikelement und Verfahren zur Herstellung einer Kontaktierung für eine Funktionskeramik
PCT/EP2023/073414 WO2024046918A1 (fr) 2022-08-30 2023-08-25 Élément céramique fonctionnel monolithique et procédé d'établissement d'une connexion par contact pour une céramique fonctionnelle

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US (1) US20260066155A1 (fr)
EP (1) EP4581900A1 (fr)
JP (1) JP2025527801A (fr)
CN (1) CN119769175A (fr)
DE (1) DE102022121865A1 (fr)
WO (1) WO2024046918A1 (fr)

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DE3224920C2 (de) * 1981-07-08 1986-11-20 Sharp K.K., Osaka Feuchtigkeitsempfindliches Widerstandselement
DD293294A5 (de) * 1990-04-03 1991-08-29 Friedrich-Schiller-Universitaet Jena,De Verfahren zum fuegen von formteilen aus keramik
AU693152B2 (en) * 1994-01-31 1998-06-25 Nippon Tungsten Co., Ltd. Flat PTC heater and resistance value regulating method for the same
JP2001023852A (ja) * 1999-07-06 2001-01-26 Murata Mfg Co Ltd 積層セラミック電子部品
DE10018377C1 (de) * 2000-04-13 2001-12-06 Epcos Ag Keramisches Vielschichtbauelement und Verfahren zur Herstellung
ES2194658T3 (es) 2000-08-25 2003-12-01 Catem Gmbh & Co Kg Dispositivo calefactor de ptc que usa un adhesivo.
DE10110680A1 (de) * 2001-03-06 2002-10-02 Epcos Ag Elektrisches Bauelement
WO2007105865A1 (fr) * 2006-03-10 2007-09-20 Joinset Co., Ltd Élément à composant en céramique, composant en céramique et procédé associé
JP5943091B2 (ja) * 2012-11-15 2016-06-29 株式会社村田製作所 正特性サーミスタおよびその製造方法
DE102015120640B4 (de) * 2015-11-27 2025-12-04 Tdk Electronics Ag Vielschichtbauelement und Verfahren zur Herstellung eines Vielschichtbauelements
DE102016108604B4 (de) 2016-05-10 2025-08-07 Tdk Electronics Ag Vielschichtbauelement und Verfahren zur Herstellung eines Vielschichtbauelements
JP6640700B2 (ja) 2016-12-02 2020-02-05 デンソートリム株式会社 電気式ヒータ
DE102017101946A1 (de) 2017-02-01 2018-08-02 Epcos Ag PTC-Heizer mit verringertem Einschaltstrom
DE102019107084B4 (de) * 2019-03-20 2021-01-28 Karlsruher Institut für Technologie Verfahren zur Herstellung eines gepolten piezokeramischen Formkörpers
DE102019217453B4 (de) * 2019-11-12 2026-02-05 Eberspächer Catem Gmbh & Co. Kg PTC-Heizzelle

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JP2025527801A (ja) 2025-08-22
DE102022121865A1 (de) 2024-02-29
WO2024046918A1 (fr) 2024-03-07
US20260066155A1 (en) 2026-03-05

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