EP4699221A1 - Agencement de branche de pont semi-conducteur de puissance - Google Patents

Agencement de branche de pont semi-conducteur de puissance

Info

Publication number
EP4699221A1
EP4699221A1 EP24731535.1A EP24731535A EP4699221A1 EP 4699221 A1 EP4699221 A1 EP 4699221A1 EP 24731535 A EP24731535 A EP 24731535A EP 4699221 A1 EP4699221 A1 EP 4699221A1
Authority
EP
European Patent Office
Prior art keywords
bridge
power semiconductor
individual
leg arrangement
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP24731535.1A
Other languages
German (de)
English (en)
Inventor
Stephen Finney
Edward HORSLEY
Paul Judge
Mason PARKER
Philip Perry Waite
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Gamesa Renewable Energy AS
Original Assignee
Siemens Gamesa Renewable Energy AS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from EP24155481.5A external-priority patent/EP4478614A1/fr
Application filed by Siemens Gamesa Renewable Energy AS filed Critical Siemens Gamesa Renewable Energy AS
Publication of EP4699221A1 publication Critical patent/EP4699221A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H03K17/166—Soft switching
    • H03K17/167—Soft switching using parallel switching arrangements
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0063—High side switches, i.e. the higher potential [DC] or life wire [AC] being directly connected to the switch and not via the load
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0072—Low side switches, i.e. the lower potential [DC] or neutral wire [AC] being directly connected to the switch and not via the load

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)
  • Power Conversion In General (AREA)

Abstract

L'invention concerne un agencement de branche de pont semi-conducteur de puissance (1), comprenant un premier point de connexion (2) et un deuxième point de connexion (3), qui doivent être connectés à une source de tension continue (4), et un point médian (5) en tant que sortie, un agencement de commutation (10) ayant un certain nombre d'éléments de commutation à semi-conducteur (6) connectés entre le premier point de connexion (2) et le deuxième point de connexion (3), et un circuit de commande (7) pour commander le nombre d'éléments de commutation à semi-conducteur (6) de l'agencement de commutation (10). L'invention est caractérisée en ce que l'agencement de commutation (10) comprend au moins deux modules en demi-pont semi-conducteurs de puissance individuels (11, 12, 13) connectés en parallèle entre le premier point de connexion (2) et le deuxième point de connexion (3), chaque module en demi-pont (11, 12, 13) comprenant un commutateur semi-conducteur côté haut (11H, 12H, 13H) et un commutateur semi-conducteur côté bas (11L, 12L, 13L) étant connecté à un point médian en demi-pont (11M, 12M, 13M), le point médian en demi-pont (11M, 12M, 13M) étant connecté au point médian (5) de l'agencement de branche de pont (1) avec une inductance conçue dédiée (L1, L2, L3). En outre, le circuit de commande (7) est conçu pour commander individuellement les opérations de commutation de chaque commutateur à semi-conducteur (11H, 11L, 12H, 12L, 13H, 13L) desdits au moins deux modules en demi-pont à semi-conducteur de puissance individuels (11, 12, 13).
EP24731535.1A 2023-06-12 2024-06-04 Agencement de branche de pont semi-conducteur de puissance Pending EP4699221A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP23178736 2023-06-12
EP24155481.5A EP4478614A1 (fr) 2023-06-12 2024-02-02 Agencement de pied de pont semi-conducteur de puissance
PCT/EP2024/065305 WO2024256214A1 (fr) 2023-06-12 2024-06-04 Agencement de branche de pont semi-conducteur de puissance

Publications (1)

Publication Number Publication Date
EP4699221A1 true EP4699221A1 (fr) 2026-02-25

Family

ID=91432625

Family Applications (1)

Application Number Title Priority Date Filing Date
EP24731535.1A Pending EP4699221A1 (fr) 2023-06-12 2024-06-04 Agencement de branche de pont semi-conducteur de puissance

Country Status (3)

Country Link
EP (1) EP4699221A1 (fr)
CN (1) CN121359381A (fr)
WO (1) WO2024256214A1 (fr)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10200030B2 (en) * 2015-03-13 2019-02-05 Transphorm Inc. Paralleling of switching devices for high power circuits
CN112187020B (zh) * 2020-09-27 2022-08-19 申彦峰 开关半导体器件并联电路及其控制方法

Also Published As

Publication number Publication date
CN121359381A (zh) 2026-01-16
WO2024256214A1 (fr) 2024-12-19

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