ES2000643A6 - Estructura semiconductora, metodo de fabricarla y diospositivo que la contiene. - Google Patents

Estructura semiconductora, metodo de fabricarla y diospositivo que la contiene.

Info

Publication number
ES2000643A6
ES2000643A6 ES8600112A ES8600112A ES2000643A6 ES 2000643 A6 ES2000643 A6 ES 2000643A6 ES 8600112 A ES8600112 A ES 8600112A ES 8600112 A ES8600112 A ES 8600112A ES 2000643 A6 ES2000643 A6 ES 2000643A6
Authority
ES
Spain
Prior art keywords
layers
semiconductive structure
manufactured
manufacture
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES8600112A
Other languages
English (en)
Inventor
Andrew W Nelson
Richard E Hobbs
Charles G D Lenton
John W Levlin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
British Telecommunications PLC
Original Assignee
British Telecommunications PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by British Telecommunications PLC filed Critical British Telecommunications PLC
Publication of ES2000643A6 publication Critical patent/ES2000643A6/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Optical Integrated Circuits (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
  • Semiconductor Memories (AREA)

Abstract

LA ESTRUCTURA SEMICONDUCTORA ESTA BASADA EN UNA MESA QUE TIENE LADOS SUSTANCIALMENTE NO REENTRANTES. PARA FABRICARLA, SE PRODUCE UNA ESTRUCTURA SEMICONDUCTORA INICIAL QUE COMPRENDE UN SUSTRATO CON UNA MESA SOBRE EL MISMO, TENIENDO LA MESA UNA TIRA (16) CENTRAL DE AUTO-ALINEACION DE MATERIAL DE SUPRESION DEL CRECIMIENTO EN FASE DE VAPOR METALOORGANICO EN SU SUPERFICIE (15) MAS SUPERIOR. DESPUES SE HACEN CRECER CAPAS DE ENTERRAR (8, 9) POR MOVPE A UNO Y OTRO LADO DE LA MESA, SE RETIRA LA TIRA Y SE HACEN CRECER CAPAS DE RECUBRIMIENTO (10, 11) SOBRE LA MESA Y REGIONES CONTIGUAS DE LAS CAPAS DE ENTERRAR (8, 9). PARA FABRICAR UN DISPOSITIVO OPTO-ELECTRONICO, SE PUEDE FORMAR UNA VENTANA (18) DE SILICE EN LA SUPERFICIE (20) MAS SUPERIOR DE LAS CAPAS DE RECUBRIMIENTO (10, 11) Y SE PROPORCIONAN CONTACTOS (13, 14, 19) A TRAVES DE LA VENTANA (18) Y A LA CARA ALEJADA DEL SUSTRATO. SE DESCRIBEN DOS METODOS PARA FABRICAR LA ESTRUCTURA SEMICONDUCTORA INICIAL. SE PUEDEN FABRICAR DISPOSITIVOS TALES COMO DETECTORES OPTICOS Y GUIAS DE ONDA USANDO LOS METODOS DE ACUERDO CON EL INVENTO. ES DE PARTICULAR IMPORTANCIA QUE SE PUEDEN FABRICAR LASERES SEMICONDUCTORES QUE FUNCIONEN EN UN SOLO MODO TRANSVERSAL.
ES8600112A 1985-07-03 1986-07-03 Estructura semiconductora, metodo de fabricarla y diospositivo que la contiene. Expired ES2000643A6 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB858516853A GB8516853D0 (en) 1985-07-03 1985-07-03 Manufacture of semiconductor structures

Publications (1)

Publication Number Publication Date
ES2000643A6 true ES2000643A6 (es) 1988-03-16

Family

ID=10581741

Family Applications (1)

Application Number Title Priority Date Filing Date
ES8600112A Expired ES2000643A6 (es) 1985-07-03 1986-07-03 Estructura semiconductora, metodo de fabricarla y diospositivo que la contiene.

Country Status (9)

Country Link
US (2) US4864581A (es)
EP (1) EP0227783B1 (es)
JP (2) JP2547001B2 (es)
CA (1) CA1261483A (es)
DE (1) DE3689067T2 (es)
ES (1) ES2000643A6 (es)
GB (1) GB8516853D0 (es)
HK (1) HK134996A (es)
WO (1) WO1987000348A1 (es)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8622767D0 (en) * 1986-09-22 1986-10-29 British Telecomm Semiconductor structures
US5145807A (en) * 1988-05-11 1992-09-08 Mitsubishi Kasei Corporation Method of making semiconductor laser devices
US5045496A (en) * 1988-05-13 1991-09-03 Rockwell International Corporation Semi-insulating cobalt doped indium phosphide grown by MOCVD
US5111469A (en) * 1989-08-15 1992-05-05 Sony Corporation Semiconductor laser
JP2827326B2 (ja) * 1989-09-27 1998-11-25 住友電気工業株式会社 半導体レーザの製造方法
DE3934998A1 (de) * 1989-10-20 1991-04-25 Standard Elektrik Lorenz Ag Elektrisch wellenlaengenabstimmbarer halbleiterlaser
US5179040A (en) * 1990-07-16 1993-01-12 Mitsubishi Denki Kabushiki Kaisha Method of making a semiconductor laser device
JPH0474488A (ja) * 1990-07-16 1992-03-09 Mitsubishi Electric Corp 半導体レーザ装置およびその製造方法
JP3108183B2 (ja) * 1992-02-10 2000-11-13 古河電気工業株式会社 半導体レーザ素子とその製造方法
US5307357A (en) * 1992-11-05 1994-04-26 International Business Machines Corporation Protection means for ridge waveguide laser structures using thick organic films
JPH0722691A (ja) * 1993-06-30 1995-01-24 Mitsubishi Electric Corp 半導体レーザとその製造方法
JP2960838B2 (ja) * 1993-07-30 1999-10-12 シャープ株式会社 半導体装置及びその製造方法
US5721751A (en) * 1993-10-28 1998-02-24 Nippon Telegraph & Telephone Corporation Semiconductor laser
JP2718901B2 (ja) * 1994-10-31 1998-02-25 ローム株式会社 半導体装置の製造方法
US5663976A (en) * 1995-10-16 1997-09-02 Northwestern University Buried-ridge laser device
SE9700931D0 (sv) * 1997-03-14 1997-03-14 Ericsson Telefon Ab L M Buried heterostructure laser
US6141365A (en) 1997-12-31 2000-10-31 Lasertron Semiconductor laser with kink suppression layer
JP3535002B2 (ja) * 1998-02-09 2004-06-07 日本電信電話株式会社 半導体レ―ザの良否判別法
US6294440B1 (en) * 1998-04-10 2001-09-25 Sharp Kabushiki Kaisha Semiconductor substrate, light-emitting device, and method for producing the same
US6365968B1 (en) 1998-08-07 2002-04-02 Corning Lasertron, Inc. Polyimide/silicon oxide bi-layer for bond pad parasitic capacitance control in semiconductor electro-optical device
US7442777B2 (en) * 2000-11-29 2008-10-28 Arius Research Inc. Cytotoxicity mediation of cells evidencing surface expression of CD63
US7431923B2 (en) * 2005-01-03 2008-10-07 Arius Research Inc. Cytotoxicity mediation of cells evidencing surface expression of CD63
JP4627132B2 (ja) * 2001-09-13 2011-02-09 シャープ株式会社 半導体レーザ装置および光ディスク記録再生装置
JP2003234541A (ja) * 2001-12-07 2003-08-22 Furukawa Electric Co Ltd:The 分布帰還型半導体レーザ素子
US7494919B2 (en) * 2005-01-12 2009-02-24 International Business Machines Corporation Method for post lithographic critical dimension shrinking using thermal reflow process
JP4853008B2 (ja) * 2005-12-14 2012-01-11 住友電気工業株式会社 半導体光素子を作製する方法
JP5653609B2 (ja) * 2008-12-01 2015-01-14 古河電気工業株式会社 光半導体装置、光ファイバ増幅器用励起光源及び光半導体装置の製造方法
US20150037923A1 (en) * 2012-01-06 2015-02-05 1366 Technologies, Inc. Methods to selectively treat portions of a surface using a self-registering mask
CN112438001B (zh) 2018-07-31 2022-06-24 三菱电机株式会社 半导体激光装置的制造方法以及半导体激光装置
US12199409B2 (en) 2018-11-19 2025-01-14 Mitsubishi Electric Corporation Optical semiconductor device and method of manufacturing optical semiconductor device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4425650A (en) * 1980-04-15 1984-01-10 Nippon Electric Co., Ltd. Buried heterostructure laser diode
GB2115608B (en) * 1982-02-24 1985-10-30 Plessey Co Plc Semi-conductor lasers
US4468850A (en) * 1982-03-29 1984-09-04 Massachusetts Institute Of Technology GaInAsP/InP Double-heterostructure lasers
JPS5957486A (ja) * 1982-09-27 1984-04-03 Nec Corp 埋め込み形半導体レ−ザ
JPS59129486A (ja) * 1983-01-14 1984-07-25 Toshiba Corp 半導体レーザ装置の製造方法
US4566171A (en) * 1983-06-20 1986-01-28 At&T Bell Laboratories Elimination of mask undercutting in the fabrication of InP/InGaAsP BH devices
JPS6062180A (ja) * 1983-09-16 1985-04-10 Oki Electric Ind Co Ltd 半導体発光素子

Also Published As

Publication number Publication date
HK134996A (en) 1996-08-02
GB8516853D0 (en) 1985-08-07
JPH09186402A (ja) 1997-07-15
JP2547001B2 (ja) 1996-10-23
EP0227783B1 (en) 1993-09-22
US4935936A (en) 1990-06-19
CA1261483A (en) 1989-09-26
EP0227783A1 (en) 1987-07-08
DE3689067T2 (de) 1994-04-28
US4864581A (en) 1989-09-05
JP2935415B2 (ja) 1999-08-16
JPS63500279A (ja) 1988-01-28
WO1987000348A1 (en) 1987-01-15
DE3689067D1 (de) 1993-10-28

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 20060704