ES2004330A4 - Disolucion oxidativa de arseniuro de galio y separacion del galio delarsenico. - Google Patents

Disolucion oxidativa de arseniuro de galio y separacion del galio delarsenico.

Info

Publication number
ES2004330A4
ES2004330A4 ES88102624T ES88102624T ES2004330A4 ES 2004330 A4 ES2004330 A4 ES 2004330A4 ES 88102624 T ES88102624 T ES 88102624T ES 88102624 T ES88102624 T ES 88102624T ES 2004330 A4 ES2004330 A4 ES 2004330A4
Authority
ES
Spain
Prior art keywords
galium
separation
delarsenic
arseniide
gallium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
ES88102624T
Other languages
English (en)
Inventor
Bruce Francis Monzyk
James Patrick Coleman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Monsanto Co
Original Assignee
Monsanto Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Monsanto Co filed Critical Monsanto Co
Publication of ES2004330A4 publication Critical patent/ES2004330A4/es
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C01G15/003—Preparation involving a liquid-liquid extraction, an adsorption or an ion-exchange
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G28/00—Compounds of arsenic
    • C01G28/005—Oxides; Hydroxides; Oxyacids
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/003—Compounds containing elements of Groups 3 or 13 of the Periodic Table without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B3/00—Extraction of metal compounds from ores or concentrates by wet processes
    • C22B3/04—Extraction of metal compounds from ores or concentrates by wet processes by leaching
    • C22B3/16—Extraction of metal compounds from ores or concentrates by wet processes by leaching in organic solutions
    • C22B3/1608—Leaching with acyclic or carbocyclic agents
    • C22B3/1616—Leaching with acyclic or carbocyclic agents of a single type
    • C22B3/165—Leaching with acyclic or carbocyclic agents of a single type with organic acids
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00—Technologies related to metal processing
    • Y02P10/20—Recycling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Geology (AREA)
  • Manufacturing & Machinery (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Removal Of Specific Substances (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Separation, Recovery Or Treatment Of Waste Materials Containing Plastics (AREA)
  • Catalysts (AREA)
  • Treatment Of Water By Oxidation Or Reduction (AREA)

Abstract

EL GALIO SE RECUPERA A PARTIR DEL ARSENIURO DE GALIO HACIENDO REACCIONAR Y DISOLVIENDO EL ARSENIURO DE GALIO CON UN AGENTE COMPLEXANTE Y OXIDANTE, ESPECIALMENTE CON ACIDOS HIDROXAMICOS INSOLUBLES EN AGUA EN CONDICIONES SUAVES, P.E. CON PEROXIDO DE HIDROGEN ACUOSO A TEMPERATURA SUAVE, PARA REALIZAR LA SEPARACION DE QUELATOS DE ACIDO HIDROXAMICO DE GALIO A PARTIR DE COMPUESTOS DE ARSENICO SOLUBLE EN AGUA.
ES88102624T 1987-02-24 1988-02-23 Disolucion oxidativa de arseniuro de galio y separacion del galio delarsenico. Pending ES2004330A4 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/018,110 US4759917A (en) 1987-02-24 1987-02-24 Oxidative dissolution of gallium arsenide and separation of gallium from arsenic

Publications (1)

Publication Number Publication Date
ES2004330A4 true ES2004330A4 (es) 1989-01-01

Family

ID=21786297

Family Applications (1)

Application Number Title Priority Date Filing Date
ES88102624T Pending ES2004330A4 (es) 1987-02-24 1988-02-23 Disolucion oxidativa de arseniuro de galio y separacion del galio delarsenico.

Country Status (10)

Country Link
US (1) US4759917A (es)
EP (1) EP0283740B1 (es)
JP (1) JPS63233015A (es)
KR (1) KR910002699B1 (es)
AT (1) ATE97699T1 (es)
AU (1) AU599749B2 (es)
CA (1) CA1338030C (es)
DE (1) DE3885776T2 (es)
ES (1) ES2004330A4 (es)
NO (1) NO171510C (es)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5030427A (en) * 1986-12-04 1991-07-09 Monsanto Company Gallium purification
US4943646A (en) * 1986-12-04 1990-07-24 Monsanto Company Gallium complexes and solvent extraction of gallium
DE3719437A1 (de) * 1987-06-11 1988-12-22 Hoechst Ag Verfahren zur gewinnung von gallium aus basisch waessrigen natriumaluminatloesungen durch fluessig-fluessigextraktion
US4980490A (en) * 1987-11-03 1990-12-25 Cornell Research Foundation, Inc. [R(Cl)GaAs(SiR'3)2 ]n
FR2624524B1 (fr) * 1987-11-24 1990-05-18 Metaleurop Sa Procede de traitement hydrometallurgique de solution de matieres galliferes
US4855114A (en) * 1988-09-30 1989-08-08 Sherex Chemical Company, Inc. Dioxime kinetic enhancer for solvent extraction of gallium from basic aqueous solutions thereof
DE3915586A1 (de) * 1989-05-12 1990-11-15 Henkel Kgaa Verfahren zur zweiphasen-extraktion von metallionen aus feste metalloxide enthaltenden phasen, mittel und verwendung
US5003092A (en) * 1989-06-02 1991-03-26 The Research Foundation Of State University Of Ny Use of R2 MR' to prepare semiconductor and ceramic precursors
AT395951B (de) * 1991-02-19 1993-04-26 Union Ind Compr Gase Gmbh Reinigung von werkstuecken mit organischen rueckstaenden
DE4204994A1 (de) * 1992-02-19 1993-08-26 Henkel Kgaa Verfahren zur abtrennung von stoerelementen aus wertmetall-loesungen
US5879507A (en) * 1992-02-21 1999-03-09 Apax Corporation Apparatus for automatically applying adhesive-backed labels to moving articles
US5399228A (en) * 1992-02-21 1995-03-21 Best Label Co., Inc. Apparatus and method for automatically applying adhesive-backed labels to moving articles
JP3278532B2 (ja) * 1994-07-08 2002-04-30 株式会社東芝 半導体装置の製造方法
TW539918B (en) 1997-05-27 2003-07-01 Tokyo Electron Ltd Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process
US6500605B1 (en) 1997-05-27 2002-12-31 Tokyo Electron Limited Removal of photoresist and residue from substrate using supercritical carbon dioxide process
US6306564B1 (en) 1997-05-27 2001-10-23 Tokyo Electron Limited Removal of resist or residue from semiconductors using supercritical carbon dioxide
US6277753B1 (en) 1998-09-28 2001-08-21 Supercritical Systems Inc. Removal of CMP residue from semiconductors using supercritical carbon dioxide process
KR100744888B1 (ko) 1999-11-02 2007-08-01 동경 엘렉트론 주식회사 소재를 초임계 처리하기 위한 장치 및 방법
US6748960B1 (en) 1999-11-02 2004-06-15 Tokyo Electron Limited Apparatus for supercritical processing of multiple workpieces
KR100693691B1 (ko) 2000-04-25 2007-03-09 동경 엘렉트론 주식회사 금속 필름의 침착방법 및 초임계 건조/세척 모듈을포함하는 금속침착 복합공정장치
EP1303870A2 (en) 2000-07-26 2003-04-23 Tokyo Electron Limited High pressure processing chamber for semiconductor substrate
US6505650B2 (en) 2001-01-03 2003-01-14 Phillips Petroleum Company Method for inhibiting corrosion under insulation on the exterior of a structure
US6273144B1 (en) * 2001-05-16 2001-08-14 Atlantic Richfield Company Method for inhibiting external corrosion on an insulated pipeline
JP3883929B2 (ja) 2001-09-25 2007-02-21 大日本スクリーン製造株式会社 薄膜形成装置および薄膜形成方法
WO2003070846A2 (en) 2002-02-15 2003-08-28 Supercritical Systems Inc. Drying resist with a solvent bath and supercritical co2
US6924086B1 (en) 2002-02-15 2005-08-02 Tokyo Electron Limited Developing photoresist with supercritical fluid and developer
US7270941B2 (en) 2002-03-04 2007-09-18 Tokyo Electron Limited Method of passivating of low dielectric materials in wafer processing
US7387868B2 (en) 2002-03-04 2008-06-17 Tokyo Electron Limited Treatment of a dielectric layer using supercritical CO2
US7169540B2 (en) 2002-04-12 2007-01-30 Tokyo Electron Limited Method of treatment of porous dielectric films to reduce damage during cleaning
US7163380B2 (en) 2003-07-29 2007-01-16 Tokyo Electron Limited Control of fluid flow in the processing of an object with a fluid
MD2937C2 (ro) * 2004-02-05 2006-09-30 Производственно-Коммерческая Фирма "Discret Element" Ооо Procedeu de curăţire a utilajului tehnologic de deşeuri după creşterea epitaxiala a straturilor semiconductoare de tipul A3B5
US7250374B2 (en) 2004-06-30 2007-07-31 Tokyo Electron Limited System and method for processing a substrate using supercritical carbon dioxide processing
US7307019B2 (en) 2004-09-29 2007-12-11 Tokyo Electron Limited Method for supercritical carbon dioxide processing of fluoro-carbon films
US7491036B2 (en) 2004-11-12 2009-02-17 Tokyo Electron Limited Method and system for cooling a pump
US7434590B2 (en) 2004-12-22 2008-10-14 Tokyo Electron Limited Method and apparatus for clamping a substrate in a high pressure processing system
US7140393B2 (en) 2004-12-22 2006-11-28 Tokyo Electron Limited Non-contact shuttle valve for flow diversion in high pressure systems
US7435447B2 (en) 2005-02-15 2008-10-14 Tokyo Electron Limited Method and system for determining flow conditions in a high pressure processing system
US7291565B2 (en) 2005-02-15 2007-11-06 Tokyo Electron Limited Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid
US7550075B2 (en) 2005-03-23 2009-06-23 Tokyo Electron Ltd. Removal of contaminants from a fluid
US7399708B2 (en) 2005-03-30 2008-07-15 Tokyo Electron Limited Method of treating a composite spin-on glass/anti-reflective material prior to cleaning
US7442636B2 (en) 2005-03-30 2008-10-28 Tokyo Electron Limited Method of inhibiting copper corrosion during supercritical CO2 cleaning
US7789971B2 (en) 2005-05-13 2010-09-07 Tokyo Electron Limited Treatment of substrate using functionalizing agent in supercritical carbon dioxide
US7524383B2 (en) 2005-05-25 2009-04-28 Tokyo Electron Limited Method and system for passivating a processing chamber
US7583491B2 (en) * 2006-05-18 2009-09-01 Varian Semiconductor Equipment Associates, Inc. Electrostatic chuck to limit particle deposits thereon
CN116409813B (zh) * 2023-01-31 2024-08-20 安徽工业大学 一种短流程制备高纯氧化镓的方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3224873A (en) * 1963-02-25 1965-12-21 Gen Mills Inc Liquid-liquid recovery of copper values using alpha-hydroxy oximes
FR2128426B1 (es) * 1971-03-02 1980-03-07 Cnen
US3821351A (en) * 1971-06-03 1974-06-28 Kerr Mc Gee Corp Solvent extraction of metal ions using n-substituted hydroxamic acids
US3927172A (en) * 1973-02-20 1975-12-16 Monsanto Co Method of concentrating gallium
US3971843A (en) * 1974-07-12 1976-07-27 Rhone-Poulenc Industries Process for liquid/liquid extraction of gallium
US4094753A (en) * 1977-06-01 1978-06-13 Cominco Ltd. Recovery of gallium from gallium compounds
US4362560A (en) * 1980-11-28 1982-12-07 Abrjutin Vladimir N Process for producing high-purity gallium
FR2495601A1 (fr) * 1980-12-05 1982-06-11 Rhone Poulenc Ind Procede de purification de solutions de gallium
JPS59186686A (ja) * 1983-04-07 1984-10-23 Dowa Mining Co Ltd 多種の金属イオンを高濃度で含有する液からガリウムまたはインジウムを選択的に分離・濃縮する方法
JPS6042234A (ja) * 1983-08-11 1985-03-06 Mitsubishi Chem Ind Ltd ガリウムの回収法
CH655710A5 (de) * 1983-11-17 1986-05-15 Sulzer Ag Verfahren zur fluessig-fluessig-extraktion von gallium aus natriumaluminatloesung mit hilfe eines organischen extraktionsmittels.
JPS62153120A (ja) * 1985-09-13 1987-07-08 Sumitomo Metal Mining Co Ltd 三塩化ガリウムの製造方法
US4741887A (en) * 1986-12-04 1988-05-03 Monsanto Company Gallium complexes and solvent extraction of gallium

Also Published As

Publication number Publication date
JPH0463812B2 (es) 1992-10-13
EP0283740B1 (en) 1993-11-24
NO171510C (no) 1993-03-24
AU1206288A (en) 1988-08-25
DE3885776D1 (de) 1994-01-05
NO880778L (no) 1988-08-25
US4759917A (en) 1988-07-26
NO171510B (no) 1992-12-14
JPS63233015A (ja) 1988-09-28
KR880009869A (ko) 1988-10-05
EP0283740A2 (en) 1988-09-28
KR910002699B1 (ko) 1991-05-03
NO880778D0 (no) 1988-02-23
EP0283740A3 (en) 1989-05-31
AU599749B2 (en) 1990-07-26
CA1338030C (en) 1996-02-06
DE3885776T2 (de) 1994-04-07
ATE97699T1 (de) 1993-12-15

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