NO880778L - Fremgangsmaate for utskillelse av gallium fra galliumarsenid. - Google Patents
Fremgangsmaate for utskillelse av gallium fra galliumarsenid.Info
- Publication number
- NO880778L NO880778L NO880778A NO880778A NO880778L NO 880778 L NO880778 L NO 880778L NO 880778 A NO880778 A NO 880778A NO 880778 A NO880778 A NO 880778A NO 880778 L NO880778 L NO 880778L
- Authority
- NO
- Norway
- Prior art keywords
- gallium
- galliumarsenid
- procedure
- separating gallium
- gallium arsenide
- Prior art date
Links
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title abstract 3
- 229910052733 gallium Inorganic materials 0.000 title abstract 3
- NEAQRZUHTPSBBM-UHFFFAOYSA-N 2-hydroxy-3,3-dimethyl-7-nitro-4h-isoquinolin-1-one Chemical class C1=C([N+]([O-])=O)C=C2C(=O)N(O)C(C)(C)CC2=C1 NEAQRZUHTPSBBM-UHFFFAOYSA-N 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 2
- 239000002253 acid Substances 0.000 abstract 1
- 150000001495 arsenic compounds Chemical class 0.000 abstract 1
- 239000008139 complexing agent Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 229940093920 gynecological arsenic compound Drugs 0.000 abstract 1
- 239000007800 oxidant agent Substances 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G15/00—Compounds of gallium, indium or thallium
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G15/00—Compounds of gallium, indium or thallium
- C01G15/003—Preparation involving a liquid-liquid extraction, an adsorption or an ion-exchange
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G28/00—Compounds of arsenic
- C01G28/005—Oxides; Hydroxides; Oxyacids
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/003—Compounds containing elements of Groups 3 or 13 of the Periodic Table without C-Metal linkages
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B3/00—Extraction of metal compounds from ores or concentrates by wet processes
- C22B3/04—Extraction of metal compounds from ores or concentrates by wet processes by leaching
- C22B3/16—Extraction of metal compounds from ores or concentrates by wet processes by leaching in organic solutions
- C22B3/1608—Leaching with acyclic or carbocyclic agents
- C22B3/1616—Leaching with acyclic or carbocyclic agents of a single type
- C22B3/165—Leaching with acyclic or carbocyclic agents of a single type with organic acids
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/20—Recycling
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Geology (AREA)
- Environmental & Geological Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Removal Of Specific Substances (AREA)
- Catalysts (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
- Separation, Recovery Or Treatment Of Waste Materials Containing Plastics (AREA)
- Treatment Of Water By Oxidation Or Reduction (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/018,110 US4759917A (en) | 1987-02-24 | 1987-02-24 | Oxidative dissolution of gallium arsenide and separation of gallium from arsenic |
Publications (4)
| Publication Number | Publication Date |
|---|---|
| NO880778D0 NO880778D0 (no) | 1988-02-23 |
| NO880778L true NO880778L (no) | 1988-08-25 |
| NO171510B NO171510B (no) | 1992-12-14 |
| NO171510C NO171510C (no) | 1993-03-24 |
Family
ID=21786297
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO880778A NO171510C (no) | 1987-02-24 | 1988-02-23 | Fremgangsmaate for dissosiering av galliumarsenid og gjenvinning av gallium |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US4759917A (no) |
| EP (1) | EP0283740B1 (no) |
| JP (1) | JPS63233015A (no) |
| KR (1) | KR910002699B1 (no) |
| AT (1) | ATE97699T1 (no) |
| AU (1) | AU599749B2 (no) |
| CA (1) | CA1338030C (no) |
| DE (1) | DE3885776T2 (no) |
| ES (1) | ES2004330A4 (no) |
| NO (1) | NO171510C (no) |
Families Citing this family (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5030427A (en) * | 1986-12-04 | 1991-07-09 | Monsanto Company | Gallium purification |
| US4943646A (en) * | 1986-12-04 | 1990-07-24 | Monsanto Company | Gallium complexes and solvent extraction of gallium |
| DE3719437A1 (de) * | 1987-06-11 | 1988-12-22 | Hoechst Ag | Verfahren zur gewinnung von gallium aus basisch waessrigen natriumaluminatloesungen durch fluessig-fluessigextraktion |
| US4980490A (en) * | 1987-11-03 | 1990-12-25 | Cornell Research Foundation, Inc. | [R(Cl)GaAs(SiR'3)2 ]n |
| FR2624524B1 (fr) * | 1987-11-24 | 1990-05-18 | Metaleurop Sa | Procede de traitement hydrometallurgique de solution de matieres galliferes |
| US4855114A (en) * | 1988-09-30 | 1989-08-08 | Sherex Chemical Company, Inc. | Dioxime kinetic enhancer for solvent extraction of gallium from basic aqueous solutions thereof |
| DE3915586A1 (de) * | 1989-05-12 | 1990-11-15 | Henkel Kgaa | Verfahren zur zweiphasen-extraktion von metallionen aus feste metalloxide enthaltenden phasen, mittel und verwendung |
| US5003092A (en) * | 1989-06-02 | 1991-03-26 | The Research Foundation Of State University Of Ny | Use of R2 MR' to prepare semiconductor and ceramic precursors |
| AT395951B (de) * | 1991-02-19 | 1993-04-26 | Union Ind Compr Gase Gmbh | Reinigung von werkstuecken mit organischen rueckstaenden |
| DE4204994A1 (de) * | 1992-02-19 | 1993-08-26 | Henkel Kgaa | Verfahren zur abtrennung von stoerelementen aus wertmetall-loesungen |
| US5879507A (en) * | 1992-02-21 | 1999-03-09 | Apax Corporation | Apparatus for automatically applying adhesive-backed labels to moving articles |
| US5399228A (en) * | 1992-02-21 | 1995-03-21 | Best Label Co., Inc. | Apparatus and method for automatically applying adhesive-backed labels to moving articles |
| JP3278532B2 (ja) * | 1994-07-08 | 2002-04-30 | 株式会社東芝 | 半導体装置の製造方法 |
| US6500605B1 (en) | 1997-05-27 | 2002-12-31 | Tokyo Electron Limited | Removal of photoresist and residue from substrate using supercritical carbon dioxide process |
| US6306564B1 (en) | 1997-05-27 | 2001-10-23 | Tokyo Electron Limited | Removal of resist or residue from semiconductors using supercritical carbon dioxide |
| TW539918B (en) | 1997-05-27 | 2003-07-01 | Tokyo Electron Ltd | Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process |
| US6277753B1 (en) | 1998-09-28 | 2001-08-21 | Supercritical Systems Inc. | Removal of CMP residue from semiconductors using supercritical carbon dioxide process |
| US6748960B1 (en) | 1999-11-02 | 2004-06-15 | Tokyo Electron Limited | Apparatus for supercritical processing of multiple workpieces |
| CA2387341A1 (en) | 1999-11-02 | 2001-05-10 | Tokyo Electron Limited | Method and apparatus for supercritical processing of multiple workpieces |
| US6890853B2 (en) | 2000-04-25 | 2005-05-10 | Tokyo Electron Limited | Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module |
| JP4724353B2 (ja) | 2000-07-26 | 2011-07-13 | 東京エレクトロン株式会社 | 半導体基板のための高圧処理チャンバー |
| US6505650B2 (en) | 2001-01-03 | 2003-01-14 | Phillips Petroleum Company | Method for inhibiting corrosion under insulation on the exterior of a structure |
| US6273144B1 (en) * | 2001-05-16 | 2001-08-14 | Atlantic Richfield Company | Method for inhibiting external corrosion on an insulated pipeline |
| JP3883929B2 (ja) | 2001-09-25 | 2007-02-21 | 大日本スクリーン製造株式会社 | 薄膜形成装置および薄膜形成方法 |
| US6924086B1 (en) | 2002-02-15 | 2005-08-02 | Tokyo Electron Limited | Developing photoresist with supercritical fluid and developer |
| WO2003070846A2 (en) | 2002-02-15 | 2003-08-28 | Supercritical Systems Inc. | Drying resist with a solvent bath and supercritical co2 |
| US7387868B2 (en) | 2002-03-04 | 2008-06-17 | Tokyo Electron Limited | Treatment of a dielectric layer using supercritical CO2 |
| US7270941B2 (en) | 2002-03-04 | 2007-09-18 | Tokyo Electron Limited | Method of passivating of low dielectric materials in wafer processing |
| US7169540B2 (en) | 2002-04-12 | 2007-01-30 | Tokyo Electron Limited | Method of treatment of porous dielectric films to reduce damage during cleaning |
| US7163380B2 (en) | 2003-07-29 | 2007-01-16 | Tokyo Electron Limited | Control of fluid flow in the processing of an object with a fluid |
| MD2937C2 (ro) * | 2004-02-05 | 2006-09-30 | Производственно-Коммерческая Фирма "Discret Element" Ооо | Procedeu de curăţire a utilajului tehnologic de deşeuri după creşterea epitaxiala a straturilor semiconductoare de tipul A3B5 |
| US7250374B2 (en) | 2004-06-30 | 2007-07-31 | Tokyo Electron Limited | System and method for processing a substrate using supercritical carbon dioxide processing |
| US7307019B2 (en) | 2004-09-29 | 2007-12-11 | Tokyo Electron Limited | Method for supercritical carbon dioxide processing of fluoro-carbon films |
| US7491036B2 (en) | 2004-11-12 | 2009-02-17 | Tokyo Electron Limited | Method and system for cooling a pump |
| US7140393B2 (en) | 2004-12-22 | 2006-11-28 | Tokyo Electron Limited | Non-contact shuttle valve for flow diversion in high pressure systems |
| US7434590B2 (en) | 2004-12-22 | 2008-10-14 | Tokyo Electron Limited | Method and apparatus for clamping a substrate in a high pressure processing system |
| US7435447B2 (en) | 2005-02-15 | 2008-10-14 | Tokyo Electron Limited | Method and system for determining flow conditions in a high pressure processing system |
| US7291565B2 (en) | 2005-02-15 | 2007-11-06 | Tokyo Electron Limited | Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid |
| US7550075B2 (en) | 2005-03-23 | 2009-06-23 | Tokyo Electron Ltd. | Removal of contaminants from a fluid |
| US7399708B2 (en) | 2005-03-30 | 2008-07-15 | Tokyo Electron Limited | Method of treating a composite spin-on glass/anti-reflective material prior to cleaning |
| US7442636B2 (en) | 2005-03-30 | 2008-10-28 | Tokyo Electron Limited | Method of inhibiting copper corrosion during supercritical CO2 cleaning |
| US7789971B2 (en) | 2005-05-13 | 2010-09-07 | Tokyo Electron Limited | Treatment of substrate using functionalizing agent in supercritical carbon dioxide |
| US7524383B2 (en) | 2005-05-25 | 2009-04-28 | Tokyo Electron Limited | Method and system for passivating a processing chamber |
| US7583491B2 (en) * | 2006-05-18 | 2009-09-01 | Varian Semiconductor Equipment Associates, Inc. | Electrostatic chuck to limit particle deposits thereon |
| CN116409813B (zh) * | 2023-01-31 | 2024-08-20 | 安徽工业大学 | 一种短流程制备高纯氧化镓的方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3224873A (en) * | 1963-02-25 | 1965-12-21 | Gen Mills Inc | Liquid-liquid recovery of copper values using alpha-hydroxy oximes |
| FR2128426B1 (no) * | 1971-03-02 | 1980-03-07 | Cnen | |
| US3821351A (en) * | 1971-06-03 | 1974-06-28 | Kerr Mc Gee Corp | Solvent extraction of metal ions using n-substituted hydroxamic acids |
| US3927172A (en) * | 1973-02-20 | 1975-12-16 | Monsanto Co | Method of concentrating gallium |
| US3971843A (en) * | 1974-07-12 | 1976-07-27 | Rhone-Poulenc Industries | Process for liquid/liquid extraction of gallium |
| US4094753A (en) * | 1977-06-01 | 1978-06-13 | Cominco Ltd. | Recovery of gallium from gallium compounds |
| US4362560A (en) * | 1980-11-28 | 1982-12-07 | Abrjutin Vladimir N | Process for producing high-purity gallium |
| FR2495601A1 (fr) * | 1980-12-05 | 1982-06-11 | Rhone Poulenc Ind | Procede de purification de solutions de gallium |
| JPS59186686A (ja) * | 1983-04-07 | 1984-10-23 | Dowa Mining Co Ltd | 多種の金属イオンを高濃度で含有する液からガリウムまたはインジウムを選択的に分離・濃縮する方法 |
| JPS6042234A (ja) * | 1983-08-11 | 1985-03-06 | Mitsubishi Chem Ind Ltd | ガリウムの回収法 |
| CH655710A5 (de) * | 1983-11-17 | 1986-05-15 | Sulzer Ag | Verfahren zur fluessig-fluessig-extraktion von gallium aus natriumaluminatloesung mit hilfe eines organischen extraktionsmittels. |
| JPS62153120A (ja) * | 1985-09-13 | 1987-07-08 | Sumitomo Metal Mining Co Ltd | 三塩化ガリウムの製造方法 |
| US4741887A (en) * | 1986-12-04 | 1988-05-03 | Monsanto Company | Gallium complexes and solvent extraction of gallium |
-
1987
- 1987-02-24 US US07/018,110 patent/US4759917A/en not_active Expired - Lifetime
-
1988
- 1988-02-23 EP EP88102624A patent/EP0283740B1/en not_active Expired - Lifetime
- 1988-02-23 AT AT88102624T patent/ATE97699T1/de not_active IP Right Cessation
- 1988-02-23 JP JP63040533A patent/JPS63233015A/ja active Granted
- 1988-02-23 AU AU12062/88A patent/AU599749B2/en not_active Ceased
- 1988-02-23 NO NO880778A patent/NO171510C/no unknown
- 1988-02-23 KR KR1019880001870A patent/KR910002699B1/ko not_active Expired
- 1988-02-23 ES ES88102624T patent/ES2004330A4/es active Pending
- 1988-02-23 CA CA000559558A patent/CA1338030C/en not_active Expired - Fee Related
- 1988-02-23 DE DE88102624T patent/DE3885776T2/de not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE3885776T2 (de) | 1994-04-07 |
| EP0283740B1 (en) | 1993-11-24 |
| JPS63233015A (ja) | 1988-09-28 |
| KR880009869A (ko) | 1988-10-05 |
| CA1338030C (en) | 1996-02-06 |
| AU599749B2 (en) | 1990-07-26 |
| AU1206288A (en) | 1988-08-25 |
| KR910002699B1 (ko) | 1991-05-03 |
| NO171510C (no) | 1993-03-24 |
| NO880778D0 (no) | 1988-02-23 |
| EP0283740A3 (en) | 1989-05-31 |
| NO171510B (no) | 1992-12-14 |
| ATE97699T1 (de) | 1993-12-15 |
| EP0283740A2 (en) | 1988-09-28 |
| JPH0463812B2 (no) | 1992-10-13 |
| DE3885776D1 (de) | 1994-01-05 |
| US4759917A (en) | 1988-07-26 |
| ES2004330A4 (es) | 1989-01-01 |
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