ES2040914T3 - Procedimiento y dispositivo para la elaboracion de capas semiconductoras que consisten de aleaciones amorfas de silicio-germanio segun la tecnica de descarga de efluvios, sobre todo para celulas solares. - Google Patents

Procedimiento y dispositivo para la elaboracion de capas semiconductoras que consisten de aleaciones amorfas de silicio-germanio segun la tecnica de descarga de efluvios, sobre todo para celulas solares.

Info

Publication number
ES2040914T3
ES2040914T3 ES198989104129T ES89104129T ES2040914T3 ES 2040914 T3 ES2040914 T3 ES 2040914T3 ES 198989104129 T ES198989104129 T ES 198989104129T ES 89104129 T ES89104129 T ES 89104129T ES 2040914 T3 ES2040914 T3 ES 2040914T3
Authority
ES
Spain
Prior art keywords
solar cells
silicon
efflux
elaboration
procedure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES198989104129T
Other languages
English (en)
Inventor
Helmold Dipl.-Phys. Kausche
Rolf Dr. Plattner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of ES2040914T3 publication Critical patent/ES2040914T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)

Abstract

LA SEPARACION A PARTIR DE LA FASE GASEOSA EN LA QUE SE EXCITA EL COMPUESTO CON EL MATERIAL A SEPARAR COMO GAS DE PROCESO EN UN REACTOR (1) ENTRE ELECTRODOS (8, 6) EN UN PLASMA DE DESCARGA DE GAS (17,7) Y SE APLICAN COMO CAPAS SOLIDAS SOBRE LOS ELECTRODOS O SOBRE LOS SUSTRATOS SITUADOS ALLI (9), TIENE LUGAR DE FORMA QUE EL GAS DE PROCESO SE EXCITA POR EXCITACION INDUCTIVA DE ALTA FRECUENCIA (17) CON UN CAMPO MAGNETICO DEBIL CONSTANTE SUPERPUESTO (15,16), DE FORMA QUE SURJA UNA RESONANCIA DE ONDA ELECTRON-CICLOTRON Y SE IONIZE ALTAMENTE EL GAS DE PROCESO. SE OBTIENEN EN ESPECIAL CAPAS AMORFAS DE SILICIO-GERMANIO CON HIDROGENO Y/O FLUOR, CARACTERIZADAS POR UN REDUCIDO GROSOR DE ESTADO Y RESULTAN ESPECIALMENTE ADECUADAS PARA CELULAS SOLARES TANDEM DE CAPAS FINAS.
ES198989104129T 1988-03-24 1989-03-08 Procedimiento y dispositivo para la elaboracion de capas semiconductoras que consisten de aleaciones amorfas de silicio-germanio segun la tecnica de descarga de efluvios, sobre todo para celulas solares. Expired - Lifetime ES2040914T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3810021 1988-03-24

Publications (1)

Publication Number Publication Date
ES2040914T3 true ES2040914T3 (es) 1993-11-01

Family

ID=6350618

Family Applications (1)

Application Number Title Priority Date Filing Date
ES198989104129T Expired - Lifetime ES2040914T3 (es) 1988-03-24 1989-03-08 Procedimiento y dispositivo para la elaboracion de capas semiconductoras que consisten de aleaciones amorfas de silicio-germanio segun la tecnica de descarga de efluvios, sobre todo para celulas solares.

Country Status (5)

Country Link
US (1) US4948750A (es)
EP (1) EP0334109B1 (es)
JP (1) JPH0210720A (es)
DE (1) DE58904540D1 (es)
ES (1) ES2040914T3 (es)

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US5187115A (en) * 1977-12-05 1993-02-16 Plasma Physics Corp. Method of forming semiconducting materials and barriers using a dual enclosure apparatus
IT1227877B (it) * 1988-11-25 1991-05-14 Eniricerche S P A Agip S P A Procedimento per la deposizione via plasma di strati multipli dimate riale amorfo a composizione variabile
US5122251A (en) * 1989-06-13 1992-06-16 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US5421891A (en) * 1989-06-13 1995-06-06 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
JP3056772B2 (ja) * 1990-08-20 2000-06-26 株式会社日立製作所 プラズマの制御方法ならびにプラズマ処理方法およびその装置
US6488807B1 (en) 1991-06-27 2002-12-03 Applied Materials, Inc. Magnetic confinement in a plasma reactor having an RF bias electrode
US6514376B1 (en) 1991-06-27 2003-02-04 Applied Materials Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6238588B1 (en) 1991-06-27 2001-05-29 Applied Materials, Inc. High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process
US6077384A (en) 1994-08-11 2000-06-20 Applied Materials, Inc. Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
US6063233A (en) 1991-06-27 2000-05-16 Applied Materials, Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6074512A (en) * 1991-06-27 2000-06-13 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
US6165311A (en) * 1991-06-27 2000-12-26 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna
US20010054601A1 (en) * 1996-05-13 2001-12-27 Jian Ding Low ceiling temperature process for a plasma reactor with heated source of a polymer-hardening precursor material
US6036877A (en) 1991-06-27 2000-03-14 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US5332441A (en) * 1991-10-31 1994-07-26 International Business Machines Corporation Apparatus for gettering of particles during plasma processing
US5521108A (en) * 1993-09-15 1996-05-28 Lsi Logic Corporation Process for making a conductive germanium/silicon member with a roughened surface thereon suitable for use in an integrated circuit structure
US5849372A (en) * 1993-09-17 1998-12-15 Isis Innovation Limited RF plasma reactor and methods of generating RF plasma
US5460693A (en) * 1994-05-31 1995-10-24 Texas Instruments Incorporated Dry microlithography process
GB9418658D0 (en) * 1994-09-16 1994-11-02 Central Research Lab Ltd An apparatus for generating a glow discharge
DE4443608C1 (de) * 1994-12-07 1996-03-21 Siemens Ag Plasmareaktor und Verfahren zu dessen Betrieb
TW279240B (en) 1995-08-30 1996-06-21 Applied Materials Inc Parallel-plate icp source/rf bias electrode head
US6054013A (en) 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
US6036878A (en) 1996-02-02 2000-03-14 Applied Materials, Inc. Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna
DE19645912C1 (de) * 1996-11-07 1997-08-28 Dresden Ev Inst Festkoerper Plasma-CVD-Reaktor
US6132551A (en) * 1997-09-20 2000-10-17 Applied Materials, Inc. Inductive RF plasma reactor with overhead coil and conductive laminated RF window beneath the overhead coil
US6589437B1 (en) 1999-03-05 2003-07-08 Applied Materials, Inc. Active species control with time-modulated plasma
JP2003530481A (ja) * 1999-11-19 2003-10-14 ナノ スケール サーフェイス システムズ インコーポレイテッド 無機／有機誘電体フィルムを堆積させるシステム及び方法
US6401652B1 (en) 2000-05-04 2002-06-11 Applied Materials, Inc. Plasma reactor inductive coil antenna with flat surface facing the plasma
US20090014423A1 (en) * 2007-07-10 2009-01-15 Xuegeng Li Concentric flow-through plasma reactor and methods therefor
US20080191193A1 (en) * 2007-01-22 2008-08-14 Xuegeng Li In situ modification of group iv nanoparticles using gas phase nanoparticle reactors
US8968438B2 (en) * 2007-07-10 2015-03-03 Innovalight, Inc. Methods and apparatus for the in situ collection of nucleated particles
US8471170B2 (en) 2007-07-10 2013-06-25 Innovalight, Inc. Methods and apparatus for the production of group IV nanoparticles in a flow-through plasma reactor
FR2922358B1 (fr) * 2007-10-16 2013-02-01 Hydromecanique & Frottement Procede de traitement de surface d'au moins une piece au moyen de sources elementaires de plasma par resonance cyclotronique electronique

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DE2904171A1 (de) * 1979-02-05 1980-08-14 Siemens Ag Verfahren zum herstellen von aus amorphem silizium bestehenden halbleiterkoerpern durch glimmentladung
CA1159012A (en) * 1980-05-02 1983-12-20 Seitaro Matsuo Plasma deposition apparatus
JPH0635323B2 (ja) * 1982-06-25 1994-05-11 株式会社日立製作所 表面処理方法
US4521447A (en) * 1982-10-18 1985-06-04 Sovonics Solar Systems Method and apparatus for making layered amorphous semiconductor alloys using microwave energy
US4583492A (en) * 1983-12-19 1986-04-22 United Technologies Corporation High rate, low temperature silicon deposition system
DE3533146A1 (de) * 1985-09-17 1987-03-26 Siemens Ag Farbsensorelement, farbempfindliche sensoranordnung mit derartigen farbsensorelementen, eine anwendung des elements oder der anordnung und ein verfahren zur herstellung eines halbleitermaterials fuer das farbsensorelement
KR910003169B1 (ko) * 1985-11-12 1991-05-20 가부시끼가이샤 한도다이 에네르기 겐뀨소 반도체 장치 제조 방법 및 장치
US4686113A (en) * 1985-12-18 1987-08-11 Fairchild Semiconductor Corporation Plasma confinement in a low pressure electrically grounded R.F. heated reactor and deposition method
US4760008A (en) * 1986-01-24 1988-07-26 Semiconductor Energy Laboratory Co., Ltd. Electrophotographic photosensitive members and methods for manufacturing the same using microwave radiation in magnetic field
US4859908A (en) * 1986-09-24 1989-08-22 Matsushita Electric Industrial Co., Ltd. Plasma processing apparatus for large area ion irradiation
JPH0676666B2 (ja) * 1987-02-10 1994-09-28 株式会社半導体エネルギ−研究所 炭素膜作製方法

Also Published As

Publication number Publication date
US4948750A (en) 1990-08-14
JPH0210720A (ja) 1990-01-16
DE58904540D1 (de) 1993-07-08
EP0334109A1 (de) 1989-09-27
EP0334109B1 (de) 1993-06-02

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