ES2045385T3 - Peliculas delgadas superconductoras de alta densidad de corriente y metodos para su produccion. - Google Patents
Peliculas delgadas superconductoras de alta densidad de corriente y metodos para su produccion.Info
- Publication number
- ES2045385T3 ES2045385T3 ES89201157T ES89201157T ES2045385T3 ES 2045385 T3 ES2045385 T3 ES 2045385T3 ES 89201157 T ES89201157 T ES 89201157T ES 89201157 T ES89201157 T ES 89201157T ES 2045385 T3 ES2045385 T3 ES 2045385T3
- Authority
- ES
- Spain
- Prior art keywords
- current density
- thin films
- high current
- production methods
- super conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/20—Permanent superconducting devices
- H10N60/203—Permanent superconducting devices comprising high-Tc ceramic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0408—Processes for depositing or forming copper oxide superconductor layers by sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
- H10N60/0632—Intermediate layers, e.g. for growth control
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Preparation Of Compounds By Using Micro-Organisms (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
DISPOSITIVO SUPERCONDUCTOR DE PELICULA DELGADA, CARACTERIZADO POR UNA TEMPERATURA CRITICA ELEVADA Y DENSIDAD DE CORRIENTE GRANDE, QUE CONSTA DE UN SUBSTRATO, UNA CAPA DE UNA ALEACION BINARIA POLICRISTALINA, FORMADA POR DOS ELEMENTOS QUE TIENEN DIFERENTES TEMPERATURAS DE FUSION, EN CAPAS SOBRE EL SUBSTRATO, UNA CAPA POLICRISTALINA HECHA DE OXIDOS METALICOS, UTILIZADA COMO UN TAMPON CRISTALINO Y QUE TIENE UNA ESTRUCTURA COMPATIBLE CON LA PELICULA SUPERCONDUCTORA Y UNA CAPA SUPERCONDUCTORA DEL TIPO YBA2CU3O7-X FORMADA SOBRE EL TAMPON. EL OXIDO METALICO Y LAS CAPAS SUPERCONDUCTORAS SON CULTIVADAS POR DESARROLLO EPITAXIAL O CASI REUTAXIAL. LA CAPA SUPERCONDUCTORA SE RECUECE EN ATMOSFERA DE OXIGENO A 800 (GRADOS) C APROXIMADAMENTE.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT20564/88A IT1217585B (it) | 1988-05-13 | 1988-05-13 | Film sottili superconduttori ad elevata densita' di corrente e loro metodo di preparazione |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2045385T3 true ES2045385T3 (es) | 1994-01-16 |
Family
ID=11168860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES89201157T Expired - Lifetime ES2045385T3 (es) | 1988-05-13 | 1989-05-05 | Peliculas delgadas superconductoras de alta densidad de corriente y metodos para su produccion. |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP0341788B1 (es) |
| JP (1) | JPH0218974A (es) |
| AT (1) | ATE93085T1 (es) |
| DE (1) | DE68908256T2 (es) |
| ES (1) | ES2045385T3 (es) |
| IT (1) | IT1217585B (es) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0494580B1 (en) * | 1991-01-07 | 2002-04-03 | International Business Machines Corporation | Superconducting field-effect transistor with inverted MISFET structure and method for making the same |
| JP3008970B2 (ja) * | 1993-07-27 | 2000-02-14 | 財団法人国際超電導産業技術研究センター | Y123型結晶構造を有する酸化物結晶膜 |
| US6022832A (en) * | 1997-09-23 | 2000-02-08 | American Superconductor Corporation | Low vacuum vapor process for producing superconductor articles with epitaxial layers |
| US6027564A (en) * | 1997-09-23 | 2000-02-22 | American Superconductor Corporation | Low vacuum vapor process for producing epitaxial layers |
| US6428635B1 (en) | 1997-10-01 | 2002-08-06 | American Superconductor Corporation | Substrates for superconductors |
| US6458223B1 (en) | 1997-10-01 | 2002-10-01 | American Superconductor Corporation | Alloy materials |
| US6475311B1 (en) | 1999-03-31 | 2002-11-05 | American Superconductor Corporation | Alloy materials |
-
1988
- 1988-05-13 IT IT20564/88A patent/IT1217585B/it active
-
1989
- 1989-05-05 DE DE89201157T patent/DE68908256T2/de not_active Expired - Fee Related
- 1989-05-05 AT AT89201157T patent/ATE93085T1/de active
- 1989-05-05 EP EP89201157A patent/EP0341788B1/en not_active Expired - Lifetime
- 1989-05-05 ES ES89201157T patent/ES2045385T3/es not_active Expired - Lifetime
- 1989-05-11 JP JP1116230A patent/JPH0218974A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0218974A (ja) | 1990-01-23 |
| EP0341788B1 (en) | 1993-08-11 |
| IT1217585B (it) | 1990-03-30 |
| DE68908256T2 (de) | 1993-12-09 |
| DE68908256D1 (de) | 1993-09-16 |
| IT8820564A0 (it) | 1988-05-13 |
| ATE93085T1 (de) | 1993-08-15 |
| EP0341788A1 (en) | 1989-11-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Xi et al. | Electric field effect in high T c superconducting ultrathin YBa2Cu3O7− x films | |
| JPS63263482A (ja) | 超電導デバイスとその製造方法 | |
| Budhani et al. | Field-induced broadening of the resistive transition and two-dimensional nature of flux pinning in Y 2 Ba 4 Cu 8 O 16 films | |
| ES2076564T3 (es) | Dispositivo superconductor con micropuente, con tc alta, que utiliza union sns borde a borde escalonada. | |
| ES2045385T3 (es) | Peliculas delgadas superconductoras de alta densidad de corriente y metodos para su produccion. | |
| ES2134370T3 (es) | Peliculas de oxidos superconductores con temperatura critica tc elevada. | |
| CA2084556A1 (en) | Method for manufacturing an artificial grain boundary type josephson junction device | |
| JPS63318014A (ja) | 金属酸化物超電導薄膜 | |
| ES2078466T3 (es) | Producto de substrato de vidrio que lleva una capa conductora transparente que contiene zinc e indio, y procedimiento para obtenerlo. | |
| US3155886A (en) | Solid state superconductor triode | |
| DE502005004585D1 (de) | VORRICHTUNG ZUR STROMBEGRENZUNG VOM RESISTIVEN TYP MIT BANDFÖRMIGEM HOCH-Tc-SUPRALEITER | |
| JPS6417314A (en) | Thin film superconductor | |
| Lee et al. | Superconducting nanobridge made from YBa2Cu3O7 film by using focused ion beam | |
| Mamalis et al. | A dc superconducting fault current limiter using die-pressed YBa2Cu3O7 ceramic | |
| JP3016566B2 (ja) | 超伝導スイッチ素子 | |
| DE69228035D1 (de) | Dünne, supraleitende Schicht aus Bi-Sr-Ca-Cu-O-Typ-Oxid | |
| JPS6411380A (en) | Manufacture of josephson element | |
| Solovyev et al. | Nonequilibrium properties of HTSC under microwave irradiation | |
| Svistunov et al. | Effect of Josephson Medium Under Tunneling in Bi-Sr-Ca-Cu-O | |
| Harris | Preparation of superconducting weak links in molybdenum films by ion implantation | |
| Jeong et al. | Electrical fluctuations in thin film copper oxide superconductors. | |
| KR880010499A (ko) | 고속-억세스 데이타 기억 회로 | |
| JPS5629383A (en) | Manufacture of tunnel-junction type josephson element | |
| Nikulin | Multifilament Superconducting Materials for Use in Technology | |
| JPH0414881A (ja) | トンネル接合素子 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG2A | Definitive protection |
Ref document number: 341788 Country of ref document: ES |