ES2076564T3 - Dispositivo superconductor con micropuente, con tc alta, que utiliza union sns borde a borde escalonada. - Google Patents

Dispositivo superconductor con micropuente, con tc alta, que utiliza union sns borde a borde escalonada.

Info

Publication number
ES2076564T3
ES2076564T3 ES92100564T ES92100564T ES2076564T3 ES 2076564 T3 ES2076564 T3 ES 2076564T3 ES 92100564 T ES92100564 T ES 92100564T ES 92100564 T ES92100564 T ES 92100564T ES 2076564 T3 ES2076564 T3 ES 2076564T3
Authority
ES
Spain
Prior art keywords
axis
edge
sub
flat substrate
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES92100564T
Other languages
English (en)
Inventor
Mark S Diiorio
Shozo Yoshizumi
Kai-Yueh Yang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Biomagnetic Technologies Inc
Original Assignee
Biomagnetic Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Biomagnetic Technologies Inc filed Critical Biomagnetic Technologies Inc
Application granted granted Critical
Publication of ES2076564T3 publication Critical patent/ES2076564T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/12—Josephson-effect devices
    • H10N60/124—Josephson-effect devices comprising high-Tc ceramic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices
    • H10N60/0941—Manufacture or treatment of Josephson-effect devices comprising high-Tc ceramic materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y10S505/702—Josephson junction present
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y10S505/731—Sputter coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/742—Annealing

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Measuring Magnetic Variables (AREA)
  • Containers, Films, And Cooling For Superconductive Devices (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

SE PRESENTA UN DISPOSITIVO SUPER CONDUCTOR MICROPUENTE QUE INCLUYE UN SUBSTRATO (26), HECHO DE UN MATERIAL TAL COMO LAAIO SUB 3 QUE TIENE UNA SUPERFICIE DE SUBSTRATO INFERIOR PLANA (40), UNA SUPERFICIE INCLINADA (42) QUE TIENE UNA INCLINACION HACIA ARRIBA DE ENTRE 20 Y 80 IE DEL SUBSTRATO INFERIOR PLANO (40), Y UNA SUPERFICIE DE SUBSTRATO PLANO SUPERIOR (44) PARALELA A LA SUPERFICIE DE SUBSTRATO PLANO INFERIOR Y SEPARADA DE LA SUPERFICIE DEL SUBSTRATO PLANO INFERIOR POR LA SUPERFICIE INCLINADA. UNA CAPA DE UN MATERIAL SEMICONDUCTOR (50) ORIENTADA EN EL SENTIDO DEL EJE C, HECHO DE UN MATERIAL TAL COMO YBA SUB 2 CU SUB 3 O SUB 7-X, SE DEPOSITA DE FORMA EPITOAXIAL SOBRE LA SUPERFICIE DEL SUBSTRATO INFERIOR PLANO, Y TIENE UN BORDE EN DIRECCION AL EJE A ADYACENTE A LA INTERSECCION CON LA SUPERFICIE DEL SUBSTRATO PLANO INFERIOR CON LA SUPERFICIE INCLINADA. EL BORDE EXPUESTO AL EJE A ESTA INCLINADO DESDE LA INTERSECCION. UNA CAPA DE UN MATERIAL SUPERCONDUCTOR (52) ORIENTADO HACIA EL EJE C SE DEPOSITA DE FORMA EPITOAXIAL SOBRE LA SUPERFICIE DEL SUBSTRATO PLANO SUPERIOR, Y PRESENTA UN BORDE EXPUESTO AL EJE A ADYACENTE A LA SUPERFICIE INCLINADA. UN HUECO (62) DESCANSA ENTRE LOS DOS BORDES EXPUESTOS AL EJE A. UNA CAPA DE UN MATERIAL NO SUPERCONDUCTOR (60) TAL COMO LA PLATA, DESCANSA EN EL HUECO ENTRE LOS DOS BORDES EXPUESTOS AL EJE A MEDIANTE LO CUAL SE DEFINE UN MICROPUENTE SUPERCONDUCTOR SNS. LAS CAPAS DEL MATERIAL SEMICONDUCTOR TIENEN UN DISEÑO PREFERIBLEMENTE ESCOGIDO PARA FORMAR UNA JUNTA JOSEPHSON TAL COMO UN DISPOSITIVO DE INTERFERENCIA DE QUANTUM SUPERCONDUCTOR.
ES92100564T 1991-01-22 1992-01-15 Dispositivo superconductor con micropuente, con tc alta, que utiliza union sns borde a borde escalonada. Expired - Lifetime ES2076564T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/644,905 US5134117A (en) 1991-01-22 1991-01-22 High tc microbridge superconductor device utilizing stepped edge-to-edge sns junction

Publications (1)

Publication Number Publication Date
ES2076564T3 true ES2076564T3 (es) 1995-11-01

Family

ID=24586835

Family Applications (1)

Application Number Title Priority Date Filing Date
ES92100564T Expired - Lifetime ES2076564T3 (es) 1991-01-22 1992-01-15 Dispositivo superconductor con micropuente, con tc alta, que utiliza union sns borde a borde escalonada.

Country Status (8)

Country Link
US (3) US5134117A (es)
EP (1) EP0496259B1 (es)
JP (2) JP3330969B2 (es)
AT (1) ATE126628T1 (es)
DE (1) DE69204080T2 (es)
DK (1) DK0496259T3 (es)
ES (1) ES2076564T3 (es)
GR (1) GR3017972T3 (es)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0725449B1 (en) * 1990-05-31 1999-02-03 Osaka Gas Company Limited A method for fabricating a Josephson device
USRE37587E1 (en) * 1990-12-28 2002-03-19 Sumitomo Electric Industries Ltd. Superconducting quantum interference device formed of oxide superconductor thin film
US5134117A (en) * 1991-01-22 1992-07-28 Biomagnetic Technologies, Inc. High tc microbridge superconductor device utilizing stepped edge-to-edge sns junction
JP3568547B2 (ja) * 1992-05-29 2004-09-22 住友電気工業株式会社 ジョセフソン接合構造体
JPH05335638A (ja) * 1992-05-29 1993-12-17 Sumitomo Electric Ind Ltd ジョセフソン接合構造体およびその作製方法
US5612290A (en) * 1992-05-29 1997-03-18 Sumitomo Electric Industries, Ltd. Josephson junction device formed of oxide superconductor
US6362617B1 (en) 1994-09-26 2002-03-26 The Boeing Company Wideband, high dynamic range antenna
US5994891A (en) * 1994-09-26 1999-11-30 The Boeing Company Electrically small, wideband, high dynamic range antenna having a serial array of optical modulators
US5600242A (en) * 1994-09-26 1997-02-04 The Boeing Company Electrically small broadband high linear dynamic range deceiver including a plurality of active antenna elements
US5567673A (en) * 1994-10-17 1996-10-22 E. I. Du Pont De Nemours And Company Process of forming multilayered Tl-containing superconducting composites
US5667650A (en) * 1995-02-14 1997-09-16 E. I. Du Pont De Nemours And Company High flow gas manifold for high rate, off-axis sputter deposition
DE19516611C1 (de) * 1995-05-10 1996-09-05 Forschungszentrum Juelich Gmbh Hochtemperatur Supraleiter-Normalleiter-Supraleiter-(HTSL-SNS-)Kontakt, Verfahren zu seiner Herstellung sowie dessen Verwendung
JPH098368A (ja) * 1995-06-23 1997-01-10 Oki Electric Ind Co Ltd 高温超電導ジョセフソン素子およびその製造方法
US6476413B1 (en) 1995-10-24 2002-11-05 The Regents Of The University Of California High temperature superconducting Josephson junctions and SQUIDs
DE19608564C2 (de) * 1996-03-07 1999-09-02 Forschungszentrum Juelich Gmbh Supraleiter/Halbleiter/ Supraleiter-Stufenkontakt
US5776863A (en) * 1996-07-08 1998-07-07 Trw Inc. In-situ fabrication of a superconductor hetero-epitaxial Josephson junction
CN1111314C (zh) * 1996-10-31 2003-06-11 南开大学 高温超导薄膜衬底台阶本征约瑟夫森结阵及其制备方法
US5892243A (en) * 1996-12-06 1999-04-06 Trw Inc. High-temperature SSNS and SNS Josephson junction and method of making junction
US20040134967A1 (en) * 1997-05-22 2004-07-15 Conductis, Inc. Interface engineered high-Tc Josephson junctions
US20040266627A1 (en) * 1997-05-22 2004-12-30 Moeckly Brian H. High-temperature superconductor devices and methods of forming the same
RU2133525C1 (ru) * 1997-10-21 1999-07-20 Омский государственный университет Сверхпроводящий квантовый интерференционный датчик и способ его изготовления
DE10158096B4 (de) * 2001-11-27 2006-01-12 Forschungszentrum Jülich GmbH Bauteil für ein SQUID-Mikroskop für Raumtemperaturproben sowie zugehörige Verwendung
US7615385B2 (en) 2006-09-20 2009-11-10 Hypres, Inc Double-masking technique for increasing fabrication yield in superconducting electronics
RU2538931C2 (ru) * 2013-05-06 2015-01-10 Общество с ограниченной ответственностью "Инженерные решения" СПОСОБ ФОРМИРОВАНИЯ YBa2Cu3O7-x-Х ПЛЕНОК С ВЫСОКОЙ ТОКОНЕСУЩЕЙ СПОСОБНОСТЬЮ НА ЗОЛОТОМ БУФЕРНОМ ПОДСЛОЕ
AU2019429186A1 (en) * 2019-02-15 2021-07-22 Delft University Of Technology Fabrication method using angled deposition and shadow walls

Family Cites Families (16)

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JPS5588382A (en) * 1978-12-27 1980-07-04 Fujitsu Ltd Preparation of tunnel junction type josephson element
US4264916A (en) * 1979-12-26 1981-04-28 Bell Telephone Laboratories, Incorporated Semiconductor barrier Josephson junction
US4414738A (en) * 1981-02-02 1983-11-15 The United States Of America As Represented By The Secretary Of The Navy Optical lithographic technique for fabricating submicron-sized Josephson microbridges
US4454522A (en) * 1981-11-05 1984-06-12 The Board Of Trustees Of The Leland Stanford Junior University Microbridge superconducting device having support with stepped parallel surfaces
US4630081A (en) * 1984-12-19 1986-12-16 Eaton Corporation MOMOM tunnel emission transistor
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JPS6411378A (en) * 1987-07-06 1989-01-13 Hitachi Ltd Formation of josephson element
JPH01161881A (ja) * 1987-12-18 1989-06-26 Nec Corp ジョセフソン素子およびその製造方法
JPH01241874A (ja) * 1988-03-23 1989-09-26 Mitsubishi Electric Corp ジョゼフソン接合素子
JPH02184087A (ja) * 1989-01-11 1990-07-18 Agency Of Ind Science & Technol 超電導弱結合素子の製造方法
US5100694A (en) * 1989-08-01 1992-03-31 The United States Of America As Represented By The Administrator National Aeronautics And Space Administration Method for producing edge geometry superconducting tunnel junctions utilizing an NbN/MgO/NbN thin film structure
EP0480814B1 (en) * 1990-10-08 1996-04-24 Sumitomo Electric Industries, Ltd. Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same
US5134117A (en) * 1991-01-22 1992-07-28 Biomagnetic Technologies, Inc. High tc microbridge superconductor device utilizing stepped edge-to-edge sns junction

Also Published As

Publication number Publication date
JP3330969B2 (ja) 2002-10-07
JP2003051626A (ja) 2003-02-21
GR3017972T3 (en) 1996-02-29
EP0496259A1 (en) 1992-07-29
JP3589656B2 (ja) 2004-11-17
JPH0582845A (ja) 1993-04-02
DE69204080T2 (de) 1996-01-11
US5134117A (en) 1992-07-28
US5367178A (en) 1994-11-22
DE69204080D1 (de) 1995-09-21
US5595959A (en) 1997-01-21
ATE126628T1 (de) 1995-09-15
EP0496259B1 (en) 1995-08-16
DK0496259T3 (da) 1995-12-18

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