ES2045569T3 - Procedimiento y dispositivo para la elaboracion de un sistema estratificado semiconductor. - Google Patents

Procedimiento y dispositivo para la elaboracion de un sistema estratificado semiconductor.

Info

Publication number
ES2045569T3
ES2045569T3 ES90100176T ES90100176T ES2045569T3 ES 2045569 T3 ES2045569 T3 ES 2045569T3 ES 90100176 T ES90100176 T ES 90100176T ES 90100176 T ES90100176 T ES 90100176T ES 2045569 T3 ES2045569 T3 ES 2045569T3
Authority
ES
Spain
Prior art keywords
semi
procedure
elaboration
conductor
stratified system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES90100176T
Other languages
English (en)
Inventor
Campe Hilmar Dr Von
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nukem GmbH
Original Assignee
Nukem GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nukem GmbH filed Critical Nukem GmbH
Application granted granted Critical
Publication of ES2045569T3 publication Critical patent/ES2045569T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/36—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations using air tracks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt

Landscapes

  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

SE PROPONE UN PROCEDIMIENTO Y DISPOSITIVO PARA LA FABRICACION DE UN SISTEMA DE SEMICONDUCTO DE ESTRATOS, EN EL QUE EN UN ESTRATO (10) SE APLICAN LAS CAPAS CORRESPONDIENTES DE SEMICONDUCTO MEDIANTE EFECTO DE CAMBIO CON UNA FUNDICION (42). LA CAPA SOPORTE (10) EN SI PUEDE SER DE VIDRIO O CUARZO QUE EN SU INTERIOR SE FORMA DE UNA FUNDICION DEJANDO RIGIDA UNA FUNDICION DE METAL.
ES90100176T 1989-01-14 1990-01-05 Procedimiento y dispositivo para la elaboracion de un sistema estratificado semiconductor. Expired - Lifetime ES2045569T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3901042A DE3901042A1 (de) 1989-01-14 1989-01-14 Verfahren und vorrichtung zur herstellung eines halbleiter-schichtsystems

Publications (1)

Publication Number Publication Date
ES2045569T3 true ES2045569T3 (es) 1994-01-16

Family

ID=6372136

Family Applications (1)

Application Number Title Priority Date Filing Date
ES90100176T Expired - Lifetime ES2045569T3 (es) 1989-01-14 1990-01-05 Procedimiento y dispositivo para la elaboracion de un sistema estratificado semiconductor.

Country Status (4)

Country Link
US (1) US5053355A (es)
EP (1) EP0379004B1 (es)
DE (2) DE3901042A1 (es)
ES (1) ES2045569T3 (es)

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DE19530982C1 (de) * 1995-08-23 1996-12-05 Centrotherm Elektrische Anlage Vorrichtung zur Erzeugung einer Strömung in einer unter hoher Temperatur stehenden Flüssigkeit
US6391108B2 (en) * 1997-12-12 2002-05-21 Canon Kabushiki Kaisha Liquid phase growth method of silicon crystal, method of producing solar cell, and liquid phase growth apparatus
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US7194197B1 (en) * 2000-03-16 2007-03-20 Global Solar Energy, Inc. Nozzle-based, vapor-phase, plume delivery structure for use in production of thin-film deposition layer
US7170001B2 (en) * 2003-06-26 2007-01-30 Advent Solar, Inc. Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias
US7649141B2 (en) * 2003-06-30 2010-01-19 Advent Solar, Inc. Emitter wrap-through back contact solar cells on thin silicon wafers
US7144751B2 (en) * 2004-02-05 2006-12-05 Advent Solar, Inc. Back-contact solar cells and methods for fabrication
US7335555B2 (en) * 2004-02-05 2008-02-26 Advent Solar, Inc. Buried-contact solar cells with self-doping contacts
US20060060238A1 (en) * 2004-02-05 2006-03-23 Advent Solar, Inc. Process and fabrication methods for emitter wrap through back contact solar cells
US20050172996A1 (en) * 2004-02-05 2005-08-11 Advent Solar, Inc. Contact fabrication of emitter wrap-through back contact silicon solar cells
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WO2009064870A2 (en) * 2007-11-13 2009-05-22 Advent Solar, Inc. Selective emitter and texture processes for back contact solar cells
US20090188603A1 (en) * 2008-01-25 2009-07-30 Applied Materials, Inc. Method and apparatus for controlling laminator temperature on a solar cell
US7968353B2 (en) 2008-04-15 2011-06-28 Global Solar Energy, Inc. Apparatus and methods for manufacturing thin-film solar cells
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US9012766B2 (en) 2009-11-12 2015-04-21 Silevo, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
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US9214576B2 (en) 2010-06-09 2015-12-15 Solarcity Corporation Transparent conducting oxide for photovoltaic devices
US9773928B2 (en) 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
US9054256B2 (en) 2011-06-02 2015-06-09 Solarcity Corporation Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
KR20140003693A (ko) * 2012-06-22 2014-01-10 엘지전자 주식회사 태양 전지의 불순물층 형성용 마스크 및 이의 제조 방법, 그리고 이를 이용한 태양 전지용 불순물층의 제조 방법
EP2904643B1 (en) 2012-10-04 2018-12-05 SolarCity Corporation Solar cell with electroplated metal grid
US9865754B2 (en) 2012-10-10 2018-01-09 Tesla, Inc. Hole collectors for silicon photovoltaic cells
US9281436B2 (en) 2012-12-28 2016-03-08 Solarcity Corporation Radio-frequency sputtering system with rotary target for fabricating solar cells
US9412884B2 (en) 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US9219174B2 (en) 2013-01-11 2015-12-22 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
US9624595B2 (en) 2013-05-24 2017-04-18 Solarcity Corporation Electroplating apparatus with improved throughput
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CN106784062A (zh) * 2016-12-30 2017-05-31 中建材浚鑫科技股份有限公司 一种硅片清洗制绒装置及其方法
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
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JP7581689B2 (ja) * 2020-07-30 2024-11-13 富士フイルムビジネスイノベーション株式会社 搬送装置及び画像形成装置

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DE3342046A1 (de) * 1983-08-19 1985-05-30 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Vorrichtung zur stabilen verankerung von schichten auf grossflaechigen halbleiterbauelementen
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Also Published As

Publication number Publication date
US5053355A (en) 1991-10-01
DE3901042C2 (es) 1993-07-15
EP0379004A2 (de) 1990-07-25
EP0379004A3 (en) 1990-10-10
EP0379004B1 (de) 1993-08-25
DE3901042A1 (de) 1990-07-26
DE59002410D1 (de) 1993-09-30

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