ES2178044T3 - Capa con zona porosa, un filtro de interferencia que contiene tal capay un procedimiento para su fabricacion. - Google Patents

Capa con zona porosa, un filtro de interferencia que contiene tal capay un procedimiento para su fabricacion.

Info

Publication number
ES2178044T3
ES2178044T3 ES97954706T ES97954706T ES2178044T3 ES 2178044 T3 ES2178044 T3 ES 2178044T3 ES 97954706 T ES97954706 T ES 97954706T ES 97954706 T ES97954706 T ES 97954706T ES 2178044 T3 ES2178044 T3 ES 2178044T3
Authority
ES
Spain
Prior art keywords
layer
procedure
porous
capay
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES97954706T
Other languages
English (en)
Inventor
Michael Berger
Michael Krueger
Markus Thoenissen
Ruediger Arens-Fischer
Hans Lueth
Walter Lang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Forschungszentrum Juelich GmbH
Original Assignee
Forschungszentrum Juelich GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Juelich GmbH filed Critical Forschungszentrum Juelich GmbH
Application granted granted Critical
Publication of ES2178044T3 publication Critical patent/ES2178044T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G02B5/285—Interference filters comprising deposited thin solid films

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Electrochemistry (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Laminated Bodies (AREA)
  • Separation Using Semi-Permeable Membranes (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Filtering Materials (AREA)
  • Weting (AREA)
  • Surface Treatment Of Optical Elements (AREA)

Abstract

LA INVENCION SE REFIERE A UNA CAPA QUE TIENE UNA SUPERFICIE REALIZADA DE MATERIAL POROSO QUE SE EXTIENDE DESDE LA SUPERFICIE DE LA CAPA HASTA EL INTERIOR DE LA MISMA, CARACTERIZADA PORQUE LA DIMENSION DE LA SUPERFICIE DE LA CAPA POROSA, EN DIRECCION PERPENDICULAR A LA SUPERFICIE DE LA CAPA, MUESTRA VALORES DIFERENTES. LA INVENCION SE REFIERE IGUALMENTE A UN PROCEDIMIENTO PARA PRODUCIR UNA CAPA CON UNA SUPERFICIE POROSA O UN SISTEMA DE CAPAS, CARACTERIZADO PORQUE LA CITADA ZONA DE CAPA POROSA SE FORMA POR MORDENTADO O DECAPADO, Y SE USAN MEDIOS PARA ELEGIR UNA DIMENSION FISICA EN RELACION CON LA VELOCIDAD DE MORDENTADO DEL PROCESO DE ATAQUE, A FIN DE FORMAR AL MENOS UN GRADIENTE DE ATAQUE.
ES97954706T 1996-12-20 1997-12-20 Capa con zona porosa, un filtro de interferencia que contiene tal capay un procedimiento para su fabricacion. Expired - Lifetime ES2178044T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19653097A DE19653097A1 (de) 1996-12-20 1996-12-20 Schicht mit porösem Schichtbereich, eine solche Schicht enthaltendes Interferenzfilter sowie Verfahren zu ihrer Herstellung

Publications (1)

Publication Number Publication Date
ES2178044T3 true ES2178044T3 (es) 2002-12-16

Family

ID=7815415

Family Applications (1)

Application Number Title Priority Date Filing Date
ES97954706T Expired - Lifetime ES2178044T3 (es) 1996-12-20 1997-12-20 Capa con zona porosa, un filtro de interferencia que contiene tal capay un procedimiento para su fabricacion.

Country Status (9)

Country Link
US (1) US6413408B1 (es)
EP (1) EP0946890B1 (es)
JP (1) JP4243670B2 (es)
AT (1) ATE218213T1 (es)
CA (1) CA2274564A1 (es)
DE (2) DE19653097A1 (es)
DK (1) DK0946890T3 (es)
ES (1) ES2178044T3 (es)
WO (1) WO1998028781A2 (es)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1010234C1 (nl) * 1998-03-02 1999-09-03 Stichting Tech Wetenschapp Werkwijze voor het elektrochemisch etsen van een p-type halfgeleidermateriaal, alsmede substraat van althans gedeeltelijk poreus halfgeleidermateriaal.
DE19900879A1 (de) * 1999-01-12 2000-08-17 Forschungszentrum Juelich Gmbh Optischer Detektor mit einer Filterschicht aus porösem Silizium und Herstellungsverfahren dazu
DE19919903A1 (de) * 1999-04-30 2000-11-02 Nft Nano Filtertechnik Gmbh Verfahren zur Herstellung eines Filters
US8274643B2 (en) * 2003-03-05 2012-09-25 The Regents Of The University Of California Porous nanostructures and methods involving the same
KR100468865B1 (ko) * 2003-06-18 2005-01-29 삼성전자주식회사 이차원적인 도펀트 분포의 분석을 위한 선택적 전기화학에칭방법
US7329361B2 (en) * 2003-10-29 2008-02-12 International Business Machines Corporation Method and apparatus for fabricating or altering microstructures using local chemical alterations
US20060027459A1 (en) * 2004-05-28 2006-02-09 Lake Shore Cryotronics, Inc. Mesoporous silicon infrared filters and methods of making same
US7608789B2 (en) * 2004-08-12 2009-10-27 Epcos Ag Component arrangement provided with a carrier substrate
DE102005008511B4 (de) 2005-02-24 2019-09-12 Tdk Corporation MEMS-Mikrofon
DE102005008512B4 (de) 2005-02-24 2016-06-23 Epcos Ag Elektrisches Modul mit einem MEMS-Mikrofon
DE102005053767B4 (de) * 2005-11-10 2014-10-30 Epcos Ag MEMS-Mikrofon, Verfahren zur Herstellung und Verfahren zum Einbau
DE102005053765B4 (de) 2005-11-10 2016-04-14 Epcos Ag MEMS-Package und Verfahren zur Herstellung
US20130048600A1 (en) * 2011-08-22 2013-02-28 Cybernetic Industrial Corporation Of Georgia Volumetric optically variable devices and methods for making same
US10276749B2 (en) * 2013-01-09 2019-04-30 Sensor Electronic Technology, Inc. Ultraviolet reflective rough adhesive contact
US9768357B2 (en) * 2013-01-09 2017-09-19 Sensor Electronic Technology, Inc. Ultraviolet reflective rough adhesive contact
DE102013106353B4 (de) * 2013-06-18 2018-06-28 Tdk Corporation Verfahren zum Aufbringen einer strukturierten Beschichtung auf ein Bauelement

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1244345B (de) * 1964-03-13 1967-07-13 Jenaer Glaswerk Schott & Gen Verfahren zum Biegen von Glasplatten
DE2917654A1 (de) * 1979-05-02 1980-11-13 Ibm Deutschland Anordnung und verfahren zum selektiven, elektrochemischen aetzen
US4283259A (en) * 1979-05-08 1981-08-11 International Business Machines Corporation Method for maskless chemical and electrochemical machining
US4622114A (en) * 1984-12-20 1986-11-11 At&T Bell Laboratories Process of producing devices with photoelectrochemically produced gratings
US5218472A (en) * 1989-03-22 1993-06-08 Alcan International Limited Optical interference structures incorporating porous films
US5338415A (en) * 1992-06-22 1994-08-16 The Regents Of The University Of California Method for detection of chemicals by reversible quenching of silicon photoluminescence
DE4319413C2 (de) * 1993-06-14 1999-06-10 Forschungszentrum Juelich Gmbh Interferenzfilter oder dielektrischer Spiegel
DE4410657C1 (de) * 1994-03-26 1995-10-19 Wolfgang Brauch Verfahren zum Erreichen besonderer künstlerischer Effekte
DE19522737A1 (de) * 1995-06-22 1997-01-02 Gut Ges Fuer Umwelttechnik Mbh Strukturprofilkatalysator in Auspuffanlagen von Verbrennungsmotoren

Also Published As

Publication number Publication date
DE59707377D1 (de) 2002-07-04
US20020074239A1 (en) 2002-06-20
WO1998028781A3 (de) 1999-02-25
DK0946890T3 (da) 2002-09-16
WO1998028781A2 (de) 1998-07-02
CA2274564A1 (en) 1998-07-02
EP0946890B1 (de) 2002-05-29
US6413408B1 (en) 2002-07-02
ATE218213T1 (de) 2002-06-15
EP0946890A2 (de) 1999-10-06
JP2001507812A (ja) 2001-06-12
DE19653097A1 (de) 1998-07-02
JP4243670B2 (ja) 2009-03-25

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