ES2063032T3 - Revestimientos antirreflexivos para utilizacion en fotolitografia. - Google Patents

Revestimientos antirreflexivos para utilizacion en fotolitografia.

Info

Publication number
ES2063032T3
ES2063032T3 ES88303400T ES88303400T ES2063032T3 ES 2063032 T3 ES2063032 T3 ES 2063032T3 ES 88303400 T ES88303400 T ES 88303400T ES 88303400 T ES88303400 T ES 88303400T ES 2063032 T3 ES2063032 T3 ES 2063032T3
Authority
ES
Spain
Prior art keywords
layer
metal
less
photolithography
approximately
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES88303400T
Other languages
English (en)
Inventor
William H Arnold Iii
Mohammad Farnaam
Jack Sliwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=21921742&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ES2063032(T3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of ES2063032T3 publication Critical patent/ES2063032T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Materials For Photolithography (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Laminated Bodies (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)

Abstract

LA REFLEXION DE LA RADIACION OPTICA INCIDENTE (18) PROCEDENTE DE UNA CAPA DE METAL ALTAMENTE REFLECTOR (12), TAL COMO ALUMINIO O TITANIO, EN UNA CAPA DE MATERIAL FOTOENDURECIBLE (14) SE DISMINUYE INTERPONIENDO UNA CAPA DE NITRURO DE TITANIO (16) ENTRE LAS CAPAS DE METAL Y MATERIAL FOTOENDURECIBLE. EL ESPESOR DE LA CAPA DE TIN DEPENDE DELA LONGITUD DE ONDA DE LA RADIACION OPTICA UTILIZADA PARA EXPONER EL MATERIAL FOTOENDURECIBLE Y DE LAS PROPIEDADES OPTICAS DE LA CAPA DE METAL SUBYACENTE. SE PUEDE CONSEGUIR REFLECTANCIA DE MENOS QUE 2 % APROXIMADAMENTE UTILIZANDO LA CAPA DE TIN JUNTO CON AL Y MENOS QUE APROXIMADAMENTE 5 % JUNTO CON TI, DE ACUERDO CON LA INVENCION. SI QUEDA EN EL SITIO DESPUES DE DISEÑAR UNA CAPA DE AL SUBYACENTE, LA CAPA DE TIN TAMBIEN SIRVE PARA SUPRIMIR LA FORMACION DE MONTICULOS EN LA CAPA DE AL.
ES88303400T 1987-04-24 1988-04-15 Revestimientos antirreflexivos para utilizacion en fotolitografia. Expired - Lifetime ES2063032T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4240287A 1987-04-24 1987-04-24

Publications (1)

Publication Number Publication Date
ES2063032T3 true ES2063032T3 (es) 1995-01-01

Family

ID=21921742

Family Applications (1)

Application Number Title Priority Date Filing Date
ES88303400T Expired - Lifetime ES2063032T3 (es) 1987-04-24 1988-04-15 Revestimientos antirreflexivos para utilizacion en fotolitografia.

Country Status (6)

Country Link
EP (1) EP0289174B1 (es)
JP (1) JP2517357B2 (es)
AT (1) ATE114061T1 (es)
DE (1) DE3852057T2 (es)
ES (1) ES2063032T3 (es)
GR (1) GR3014920T3 (es)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5219788A (en) * 1991-02-25 1993-06-15 Ibm Corporation Bilayer metallization cap for photolithography
US6040613A (en) * 1996-01-19 2000-03-21 Micron Technology, Inc. Antireflective coating and wiring line stack

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS596540A (ja) * 1982-07-05 1984-01-13 Toshiba Corp 半導体装置の製造方法
GB2145539B (en) * 1983-08-22 1986-08-28 Gen Electric Optical preparation of molybdenum surfaces
JPH061764B2 (ja) * 1985-02-14 1994-01-05 日本電信電話株式会社 パタ−ン形成法

Also Published As

Publication number Publication date
JPS63316053A (ja) 1988-12-23
EP0289174A2 (en) 1988-11-02
GR3014920T3 (en) 1995-05-31
EP0289174A3 (en) 1990-11-22
DE3852057D1 (de) 1994-12-15
ATE114061T1 (de) 1994-11-15
DE3852057T2 (de) 1995-05-11
JP2517357B2 (ja) 1996-07-24
EP0289174B1 (en) 1994-11-09

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