ES2063554T3 - Dispositivo electronico que emplea una fuente de electrones con afinidad electronica baja/negativa. - Google Patents

Dispositivo electronico que emplea una fuente de electrones con afinidad electronica baja/negativa.

Info

Publication number
ES2063554T3
ES2063554T3 ES92111409T ES92111409T ES2063554T3 ES 2063554 T3 ES2063554 T3 ES 2063554T3 ES 92111409 T ES92111409 T ES 92111409T ES 92111409 T ES92111409 T ES 92111409T ES 2063554 T3 ES2063554 T3 ES 2063554T3
Authority
ES
Spain
Prior art keywords
electron
electronic
low
negative
affinity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES92111409T
Other languages
English (en)
Inventor
James E Jaskie
Xiaodong T Zhu
Robert C Kane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of ES2063554T3 publication Critical patent/ES2063554T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30457—Diamond

Landscapes

  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
  • Led Devices (AREA)
  • Lasers (AREA)
  • Luminescent Compositions (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)

Abstract

DISPOSITIVOS ELECTRONICOS (600) QUE EMPLEAN FUENTES DE ELECTRONES (610) QUE INCLUYEN UN MATERIAL QUE TIENE UNA SUPERFICIE QUE MUESTRA UNA AFINIDAD ELECTRONICA MUY BAJA/NEGATIVA, COMO, POR EJEMPLO, EL PLANO CRISTALOGRAFICO 111 DE TIPO DIAMANTE II-B. SE SUMINISTRAN LAS FUENTES DE ELECTRONES (802, 902) CON DISCONTINUIDADES GEOMETRICAS QUE MUESTRAN RADIOS DE CURVATURA SUPERIORES A, APROXIMADAMENTE, 1000 ANGSTROM QUE SUBSTANCIALMENTE MEJORAN LOS NIVELES DE EMISION DE ELECTRONES Y DISMINUYEN LAS NECESIDADES DE CARACTERISTICAS PUNTA/BORDE. SE DESCRIBEN LOS DISPOSITIVOS ELECTRONICOS QUE EMPLEAN TALES FUENTES DE ELECTRONES, ENTRE ELLOS DISPOSITIVOS ELECTRONICOS DE GENERACION DE IMAGENES, DISPOSITIVOS ELECTRONICOS DE FUENTES DE LUZ Y DISPOSITIVOS ELECTRONICOS DE AMPLIFICADORES DE SEÑALES DE INFORMACION.
ES92111409T 1991-07-18 1992-07-06 Dispositivo electronico que emplea una fuente de electrones con afinidad electronica baja/negativa. Expired - Lifetime ES2063554T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/732,298 US5283501A (en) 1991-07-18 1991-07-18 Electron device employing a low/negative electron affinity electron source

Publications (1)

Publication Number Publication Date
ES2063554T3 true ES2063554T3 (es) 1995-01-01

Family

ID=24942992

Family Applications (1)

Application Number Title Priority Date Filing Date
ES92111409T Expired - Lifetime ES2063554T3 (es) 1991-07-18 1992-07-06 Dispositivo electronico que emplea una fuente de electrones con afinidad electronica baja/negativa.

Country Status (10)

Country Link
US (1) US5283501A (es)
EP (1) EP0523494B1 (es)
JP (1) JPH05234500A (es)
CN (1) CN1044945C (es)
AT (1) ATE113410T1 (es)
CA (1) CA2070767A1 (es)
DE (1) DE69200574T2 (es)
DK (1) DK0523494T3 (es)
ES (1) ES2063554T3 (es)
RU (1) RU2102812C1 (es)

Families Citing this family (37)

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Publication number Priority date Publication date Assignee Title
JP3255960B2 (ja) * 1991-09-30 2002-02-12 株式会社神戸製鋼所 冷陰極エミッタ素子
US5397428A (en) * 1991-12-20 1995-03-14 The University Of North Carolina At Chapel Hill Nucleation enhancement for chemical vapor deposition of diamond
US6127773A (en) 1992-03-16 2000-10-03 Si Diamond Technology, Inc. Amorphic diamond film flat field emission cathode
US5686791A (en) 1992-03-16 1997-11-11 Microelectronics And Computer Technology Corp. Amorphic diamond film flat field emission cathode
US5675216A (en) 1992-03-16 1997-10-07 Microelectronics And Computer Technololgy Corp. Amorphic diamond film flat field emission cathode
US5844252A (en) * 1993-09-24 1998-12-01 Sumitomo Electric Industries, Ltd. Field emission devices having diamond field emitter, methods for making same, and methods for fabricating porous diamond
JP3269065B2 (ja) * 1993-09-24 2002-03-25 住友電気工業株式会社 電子デバイス
US5469026A (en) * 1993-11-09 1995-11-21 Delco Electronics Corporation Method and apparatus for VF tube power supply
EP0675519A1 (en) * 1994-03-30 1995-10-04 AT&T Corp. Apparatus comprising field emitters
EP0687018B1 (en) * 1994-05-18 2003-02-19 Kabushiki Kaisha Toshiba Device for emitting electrons
US5491384A (en) * 1994-08-30 1996-02-13 Dyna Image Corporation Light source for a contact image sensor
US5528108A (en) * 1994-09-22 1996-06-18 Motorola Field emission device arc-suppressor
US5637950A (en) * 1994-10-31 1997-06-10 Lucent Technologies Inc. Field emission devices employing enhanced diamond field emitters
US5592053A (en) * 1994-12-06 1997-01-07 Kobe Steel Usa, Inc. Diamond target electron beam device
US5705886A (en) * 1994-12-21 1998-01-06 Philips Electronics North America Corp. Cathode for plasma addressed liquid crystal display
US5680008A (en) * 1995-04-05 1997-10-21 Advanced Technology Materials, Inc. Compact low-noise dynodes incorporating semiconductor secondary electron emitting materials
US5679895A (en) * 1995-05-01 1997-10-21 Kobe Steel Usa, Inc. Diamond field emission acceleration sensor
US5703380A (en) * 1995-06-13 1997-12-30 Advanced Vision Technologies Inc. Laminar composite lateral field-emission cathode
US5647998A (en) * 1995-06-13 1997-07-15 Advanced Vision Technologies, Inc. Fabrication process for laminar composite lateral field-emission cathode
US5773920A (en) * 1995-07-03 1998-06-30 The United States Of America As Represented By The Secretary Of The Navy Graded electron affinity semiconductor field emitter
US5981071A (en) * 1996-05-20 1999-11-09 Borealis Technical Limited Doped diamond for vacuum diode heat pumps and vacuum diode thermionic generators
US6214651B1 (en) * 1996-05-20 2001-04-10 Borealis Technical Limited Doped diamond for vacuum diode heat pumps and vacuum diode thermionic generators
EP0974156B1 (en) 1996-06-25 2004-10-13 Vanderbilt University Microtip vacuum field emitter structures, arrays, and devices, and methods of fabrication
CN1119829C (zh) * 1996-09-17 2003-08-27 浜松光子学株式会社 光电阴极及装备有它的电子管
JP3745844B2 (ja) * 1996-10-14 2006-02-15 浜松ホトニクス株式会社 電子管
FR2793602B1 (fr) * 1999-05-12 2001-08-03 Univ Claude Bernard Lyon Procede et dispositif pour extraire des electrons dans le vide et cathodes d'emission pour un tel dispositif
RU2214073C2 (ru) * 1999-12-30 2003-10-10 Общество с ограниченной ответственностью "Научно-производственное предприятие "Кристаллы и Технологии" Источник белого света
JP3535871B2 (ja) * 2002-06-13 2004-06-07 キヤノン株式会社 電子放出素子、電子源、画像表示装置及び電子放出素子の製造方法
JP4154356B2 (ja) * 2003-06-11 2008-09-24 キヤノン株式会社 電子放出素子、電子源、画像表示装置及びテレビ
JP3826120B2 (ja) * 2003-07-25 2006-09-27 キヤノン株式会社 電子放出素子、電子源及び画像表示装置の製造方法
US20050104506A1 (en) * 2003-11-18 2005-05-19 Youh Meng-Jey Triode Field Emission Cold Cathode Devices with Random Distribution and Method
JP4667031B2 (ja) 2004-12-10 2011-04-06 キヤノン株式会社 電子放出素子の製造方法、および該製造方法を用いた、電子源並びに画像表示装置の製造方法
EP2034504A4 (en) * 2006-06-28 2010-08-18 Sumitomo Electric Industries DIAMOND ELECTRON RADIATION CATHODE, ELECTRON SOURCE, ELECTRON MICROSCOPE AND ELECTRON BEAM EXPOSURE DEVICE
JP2009104916A (ja) * 2007-10-24 2009-05-14 Canon Inc 電子放出素子、電子源、画像表示装置および電子放出素子の製造方法
JP2009117203A (ja) * 2007-11-07 2009-05-28 Canon Inc 電子放出素子の製造方法、電子源の製造方法、および、画像表示装置の製造方法
JP2009146751A (ja) * 2007-12-14 2009-07-02 Canon Inc 電子放出素子、電子源、および、画像表示装置
US8933462B2 (en) * 2011-12-21 2015-01-13 Akhan Semiconductor, Inc. Method of fabricating diamond semiconductor and diamond semiconductor formed according to the method

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3699404A (en) * 1971-02-24 1972-10-17 Rca Corp Negative effective electron affinity emitters with drift fields using deep acceptor doping
US3921022A (en) * 1974-09-03 1975-11-18 Rca Corp Field emitting device and method of making same
US4084942A (en) * 1975-08-27 1978-04-18 Villalobos Humberto Fernandez Ultrasharp diamond edges and points and method of making
US4040074A (en) * 1976-03-22 1977-08-02 Hamamatsu Terebi Kabushiki Kaisha Semiconductor cold electron emission device
US4498952A (en) * 1982-09-17 1985-02-12 Condesin, Inc. Batch fabrication procedure for manufacture of arrays of field emitted electron beams with integral self-aligned optical lense in microguns
FR2568394B1 (fr) * 1984-07-27 1988-02-12 Commissariat Energie Atomique Dispositif de visualisation par cathodoluminescence excitee par emission de champ
EP0278405B1 (en) * 1987-02-06 1996-08-21 Canon Kabushiki Kaisha Electron emission element and method of manufacturing the same
US4721885A (en) * 1987-02-11 1988-01-26 Sri International Very high speed integrated microelectronic tubes
JPH0220337A (ja) * 1988-07-08 1990-01-23 Matsushita Electric Works Ltd 積層板の製造方法
GB8818445D0 (en) * 1988-08-03 1988-09-07 Jones B L Stm probe
US5180951A (en) * 1992-02-05 1993-01-19 Motorola, Inc. Electron device electron source including a polycrystalline diamond

Also Published As

Publication number Publication date
DE69200574D1 (de) 1994-12-01
CN1044945C (zh) 1999-09-01
CN1072286A (zh) 1993-05-19
EP0523494B1 (en) 1994-10-26
DE69200574T2 (de) 1995-05-18
RU2102812C1 (ru) 1998-01-20
US5283501A (en) 1994-02-01
DK0523494T3 (da) 1994-11-28
EP0523494A1 (en) 1993-01-20
JPH05234500A (ja) 1993-09-10
ATE113410T1 (de) 1994-11-15
CA2070767A1 (en) 1993-01-19

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