ES2065934T3 - Componente para usar en un horno de difusion. - Google Patents

Componente para usar en un horno de difusion.

Info

Publication number
ES2065934T3
ES2065934T3 ES89107471T ES89107471T ES2065934T3 ES 2065934 T3 ES2065934 T3 ES 2065934T3 ES 89107471 T ES89107471 T ES 89107471T ES 89107471 T ES89107471 T ES 89107471T ES 2065934 T3 ES2065934 T3 ES 2065934T3
Authority
ES
Spain
Prior art keywords
carbon
silicone
matrix
oven
broadcasting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES89107471T
Other languages
English (en)
Inventor
Bryan D Foster
Frank Fonzi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Abrasives Inc
Original Assignee
Norton Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Norton Co filed Critical Norton Co
Application granted granted Critical
Publication of ES2065934T3 publication Critical patent/ES2065934T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B30/00—Compositions for artificial stone, not containing binders
    • C04B30/02—Compositions for artificial stone, not containing binders containing fibrous materials
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any of groups F27B1/00 - F27B15/00
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Chamber type furnaces specially adapted for treating semiconductor wafers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Ceramic Products (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

SE CONSTRUYEN COMPONENTES PARA HORNOS DE DIFUSION SEMICONDUCTORES DE UNA ALTA PUREZA IMPERMEABLE A UNA MATRIZ DE CARBIDA - SILICONA O NITRIDO - SILICONA DEPOSITADA EN UNA MATRIZ FIBROSA PRE - FORMADA DE CARBIDA - SILICONA, CARBONO, O CARBONO REVESTIDO DE CARBIDA SILICONA. LA ALTA PUREZA PREVIENE A LA MATRIZ DE COMPONENTES GASEOSOS INDESEADOS DE LA CONTAMINACION DE LA ATMOSFERA DEL HORNO, Y LAS FIBRAS DE REFUERZO PROPORCIONAN FUERZA COMBINADO CON PESO LIGERO. FIG.6.
ES89107471T 1988-04-29 1989-04-25 Componente para usar en un horno de difusion. Expired - Lifetime ES2065934T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US18823888A 1988-04-29 1988-04-29

Publications (1)

Publication Number Publication Date
ES2065934T3 true ES2065934T3 (es) 1995-03-01

Family

ID=22692311

Family Applications (1)

Application Number Title Priority Date Filing Date
ES89107471T Expired - Lifetime ES2065934T3 (es) 1988-04-29 1989-04-25 Componente para usar en un horno de difusion.

Country Status (6)

Country Link
EP (1) EP0339573B1 (es)
KR (1) KR900017158A (es)
CN (1) CN1025070C (es)
AT (1) ATE113574T1 (es)
DE (1) DE68919113T2 (es)
ES (1) ES2065934T3 (es)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114477733B (zh) * 2021-12-24 2023-08-29 西南科技大学 一种水化烧结制备花岗岩基玻璃固化体的方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2524378A1 (de) * 1975-06-02 1976-12-16 Siemens Ag Vorrichtung zur aufnahme von zu dotierendem halbleitermaterial, wobei die dotierung im reaktor durchgefuehrt wird
JPS60138914A (ja) * 1983-12-26 1985-07-23 Toshiba Ceramics Co Ltd 半導体拡散炉管の製造方法
US4580524A (en) * 1984-09-07 1986-04-08 The United States Of America As Represented By The United States Department Of Energy Process for the preparation of fiber-reinforced ceramic composites by chemical vapor deposition

Also Published As

Publication number Publication date
CN1039893A (zh) 1990-02-21
EP0339573A2 (en) 1989-11-02
EP0339573A3 (en) 1991-01-16
DE68919113D1 (de) 1994-12-08
KR900017158A (ko) 1990-11-15
ATE113574T1 (de) 1994-11-15
EP0339573B1 (en) 1994-11-02
CN1025070C (zh) 1994-06-15
DE68919113T2 (de) 1995-03-09

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