ES2072321T3 - Capa de pasivado electroactiva. - Google Patents

Capa de pasivado electroactiva.

Info

Publication number
ES2072321T3
ES2072321T3 ES90101718T ES90101718T ES2072321T3 ES 2072321 T3 ES2072321 T3 ES 2072321T3 ES 90101718 T ES90101718 T ES 90101718T ES 90101718 T ES90101718 T ES 90101718T ES 2072321 T3 ES2072321 T3 ES 2072321T3
Authority
ES
Spain
Prior art keywords
electroactive
layer
liability
semiconducting
fulfill
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES90101718T
Other languages
English (en)
Inventor
Siegfried Dr Birkle
Johann Dr Kammermaier
Gerhard Dr Schmidt
Albrecht Prof Dr Winnacker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Application granted granted Critical
Publication of ES2072321T3 publication Critical patent/ES2072321T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/958—Passivation layer

Landscapes

  • Formation Of Insulating Films (AREA)
  • Photovoltaic Devices (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

CAPAS PASIVAS ELECTROACTIVAS PARA ELEMENTOS DE CONSTRUCCION SEMICONDUCTORES, QUE CUMPLEN LAS PROPIEDADES NECESARIAS PARA ESTE EMPLEO EN ALTA MEDIDA, COMPUESTOS DE UNA CAPA FINA DE CARBONO AMORFO CON CONTENIDO DE HIDROGENO.
ES90101718T 1989-02-01 1990-01-29 Capa de pasivado electroactiva. Expired - Lifetime ES2072321T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3902970 1989-02-01

Publications (1)

Publication Number Publication Date
ES2072321T3 true ES2072321T3 (es) 1995-07-16

Family

ID=6373227

Family Applications (1)

Application Number Title Priority Date Filing Date
ES90101718T Expired - Lifetime ES2072321T3 (es) 1989-02-01 1990-01-29 Capa de pasivado electroactiva.

Country Status (5)

Country Link
US (1) US5039358A (es)
EP (1) EP0381111B1 (es)
JP (1) JP3428984B2 (es)
DE (1) DE59009167D1 (es)
ES (1) ES2072321T3 (es)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE59006267D1 (de) * 1989-02-01 1994-08-04 Siemens Ag Schutzschicht für elektroaktive Passivierschichten.
EP0472054A1 (de) * 1990-08-20 1992-02-26 Siemens Aktiengesellschaft Photozelle mit amorphem, wasserstoffhaltigem Kohlenstoff
FR2675947A1 (fr) * 1991-04-23 1992-10-30 France Telecom Procede de passivation locale d'un substrat par une couche de carbone amorphe hydrogene et procede de fabrication de transistors en couches minces sur ce substrat passive.
EP0624901A1 (de) * 1993-05-13 1994-11-17 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Halbleiterbauelement mit Passivierungsschicht
EP0644266A1 (de) * 1993-09-22 1995-03-22 Siemens Aktiengesellschaft Arbeitselektrode für ekektrodechemisch-enzymatische Sensorsysteme
DE4428524A1 (de) * 1994-08-11 1997-12-04 Eupec Gmbh & Co Kg Halbleiterbauelement mit Passivierungsschicht
US5562781A (en) * 1995-01-19 1996-10-08 Ohio University Amorphous, hydrogenated carbon (a-C:H) photovoltaic cell
DE19514079A1 (de) * 1995-04-13 1996-10-17 Siemens Ag Verfahren zum Passivieren einer Siliciumcarbid-Oberfläche gegenüber Sauerstoff
US5942328A (en) * 1996-02-29 1999-08-24 International Business Machines Corporation Low dielectric constant amorphous fluorinated carbon and method of preparation
US6071597A (en) * 1997-08-28 2000-06-06 3M Innovative Properties Company Flexible circuits and carriers and process for manufacture
US6448655B1 (en) 1998-04-28 2002-09-10 International Business Machines Corporation Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation
DE19851461C2 (de) * 1998-11-09 2003-07-31 Semikron Elektronik Gmbh Schnelle Leistungsdiode und Verfahren zu ihrer Passivierung
JP2002535840A (ja) * 1999-01-12 2002-10-22 オイペツク オイロペーイツシエ ゲゼルシヤフト フユール ライスツングスハルプライター エムベーハー ウント コンパニイ コマンデイートゲゼルシヤフト メサ形縁端部を備えるパワー半導体素子
US6995821B1 (en) * 1999-04-23 2006-02-07 International Business Machines Corporation Methods of reducing unbalanced DC voltage between two electrodes of reflective liquid crystal display by thin film passivation
DE10047152B4 (de) * 2000-09-22 2006-07-06 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Hochvolt-Diode und Verfahren zu deren Herstellung
US8137105B2 (en) 2003-07-31 2012-03-20 International Business Machines Corporation Chinese/English vocabulary learning tool
DE10358985B3 (de) * 2003-12-16 2005-05-19 Infineon Technologies Ag Halbleiterbauelement mit einem pn-Übergang und einer auf einer Oberfläche aufgebrachten Passivierungsschicht
DE10359371A1 (de) * 2003-12-18 2005-07-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Passivierte Endoberflächen
DE102004002908B4 (de) * 2004-01-20 2008-01-24 Infineon Technologies Ag Verfahren zum Herstellen eines Halbleiterbauelements oder einer mikromechanischen Struktur
DE102006007093B4 (de) * 2006-02-15 2008-08-14 Infineon Technologies Ag Verfahren zur Herstellung einer haftfähigen Schicht auf einem Halbleiterkörper
DE102006011697B4 (de) * 2006-03-14 2012-01-26 Infineon Technologies Austria Ag Integrierte Halbleiterbauelementeanordnung und Verfahren zu deren Herstellung
US8013340B2 (en) * 2008-09-30 2011-09-06 Infineon Technologies Ag Semiconductor device with semiconductor body and method for the production of a semiconductor device
WO2010132284A1 (en) * 2009-05-13 2010-11-18 The Trustees Of The University Of Pennsylvania Photolithographically defined contacts to carbon nanostructures
US8884378B2 (en) 2010-11-03 2014-11-11 Infineon Technologies Ag Semiconductor device and a method for manufacturing a semiconductor device

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4060660A (en) * 1976-01-15 1977-11-29 Rca Corporation Deposition of transparent amorphous carbon films
DE2730367A1 (de) * 1977-07-05 1979-01-18 Siemens Ag Verfahren zum passivieren von halbleiterelementen
US4742384A (en) * 1978-02-01 1988-05-03 Rca Corporation Structure for passivating a PN junction
JPS55115386A (en) * 1979-02-26 1980-09-05 Hitachi Ltd Semiconductor laser unit
US4254426A (en) * 1979-05-09 1981-03-03 Rca Corporation Method and structure for passivating semiconductor material
JPS5930709A (ja) * 1982-08-13 1984-02-18 Toa Nenryo Kogyo Kk 炭素膜及び／又は炭素粒子の製造方法
JPS5955077A (ja) * 1982-09-22 1984-03-29 Sanyo Electric Co Ltd 光起電力装置
DE3316693A1 (de) * 1983-05-06 1984-11-08 Leybold-Heraeus GmbH, 5000 Köln Verfahren zum herstellen von amorphen kohlenstoffschichten auf substraten und durch das verfahren beschichtete substrate
JPS61219961A (ja) * 1985-03-26 1986-09-30 Fuji Electric Co Ltd 電子写真感光体
US4675265A (en) * 1985-03-26 1987-06-23 Fuji Electric Co., Ltd. Electrophotographic light-sensitive element with amorphous C overlayer
DE3610076A1 (de) * 1985-03-26 1986-10-09 Fuji Electric Co., Ltd., Kawasaki, Kanagawa Elektrofotografisches lichtempfindliches element
US4673589A (en) * 1986-02-18 1987-06-16 Amoco Corporation Photoconducting amorphous carbon
US4737429A (en) * 1986-06-26 1988-04-12 Xerox Corporation Layered amorphous silicon imaging members
US4756964A (en) * 1986-09-29 1988-07-12 The Dow Chemical Company Barrier films having an amorphous carbon coating and methods of making
US4695859A (en) * 1986-10-20 1987-09-22 Energy Conversion Devices, Inc. Thin film light emitting diode, photonic circuit employing said diode imager employing said circuits
US4760005A (en) * 1986-11-03 1988-07-26 Xerox Corporation Amorphous silicon imaging members with barrier layers
JPH07120812B2 (ja) * 1986-12-17 1995-12-20 三田工業株式会社 電子写真用感光体及びその製造方法
JPS63210268A (ja) * 1987-02-26 1988-08-31 Meidensha Electric Mfg Co Ltd 炭素薄膜の形成方法
US4972250A (en) * 1987-03-02 1990-11-20 Microwave Technology, Inc. Protective coating useful as passivation layer for semiconductor devices
JPS63246283A (ja) * 1987-03-31 1988-10-13 Minolta Camera Co Ltd 光記録体

Also Published As

Publication number Publication date
US5039358A (en) 1991-08-13
JP3428984B2 (ja) 2003-07-22
EP0381111B1 (de) 1995-05-31
JPH02239623A (ja) 1990-09-21
DE59009167D1 (de) 1995-07-06
EP0381111A2 (de) 1990-08-08
EP0381111A3 (en) 1990-12-19

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