ES2067098T3 - Procedimiento e instalacion para el tratamiento reactivo reforzado por descarga por arco de tension continua de producto. - Google Patents

Procedimiento e instalacion para el tratamiento reactivo reforzado por descarga por arco de tension continua de producto.

Info

Publication number
ES2067098T3
ES2067098T3 ES91112187T ES91112187T ES2067098T3 ES 2067098 T3 ES2067098 T3 ES 2067098T3 ES 91112187 T ES91112187 T ES 91112187T ES 91112187 T ES91112187 T ES 91112187T ES 2067098 T3 ES2067098 T3 ES 2067098T3
Authority
ES
Spain
Prior art keywords
bell jar
arc
distribution
treatment
discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES91112187T
Other languages
English (en)
Inventor
Johann Dr Karner
Erich Dr Bergmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OC Oerlikon Balzers AG
Original Assignee
Balzers AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Balzers AG filed Critical Balzers AG
Application granted granted Critical
Publication of ES2067098T3 publication Critical patent/ES2067098T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using DC or AC discharges
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • Arc Welding Control (AREA)
  • Nonmetallic Welding Materials (AREA)
  • Discharge Heating (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

LA INVENCION TRATA DE UN PROCEDIMIENTO QUE SE UTILIZA PARA EL TRATAMIENTO REACTIVO DE SUPERFICIES DE UNAS PIEZAS HERRAMIENTAS Y CONSISTE EN: APLICAR UN GAS EN UN RECIPIENTE; PRODUCIR EN EL RECIPIENTE UNA DESCARGA DE CORRIENTE CONTINUA POR ARCO VOLTAICO Y; MANTENER LA DESCARGA MEDIANTE UN ACOPLAMIENTO DE UNA CORRIENTE DE PARTICULAS CARGADAS, Y SE CARACTERIZA PORQUE: PARA EVITAR EL PROBLEMA DE LA DISTRIBUCION NO HOMOGENEA DEL PLASMA ORIGINADO EN EL ARCO VOLTAICO DE CORRIENTE CONTINUA POR EL ESPACIO INTERIOR, Y PARA AMPLIAR LA ZONA QUE CONTIENE AL PLASMA NECESARIO PARA EL TRATAMIENTO SUPERFICIAL, LA DISTRIBUCION ACTIVA DEL PLASMA DE TRATAMIENTO POR EL RECIPIENTE, SE AFIANZA A LO LARGO DE UNA SUPERFICIE PRECALCULADA, Y A TRAVES DE UNA DETERMINADA DISTRIBUCION SUPERFICIAL DE ADMISION DE GAS Y A TRAVES DE UNA DETERMINADA DISTRIBUCION DE LA DESCARGA DE ARCO VOLTAICO EN EL RECIPIENTE, SE ACOPLA LA CORRIENTE CON PARTICULAS CARGADAS POR VARIAS APERTURAS DE DISTRIBUCION DEL RECIPIENTE. SE PUEDEN REALIZAR AMPLIOS PLASMAS CON GRAN ENERGIA Y NO IONIZABLES, ADEMAS, CON ESTOS PLASMAS SE REALIZAN TRATAMIENTOS DE GRANDES SUPERFICIES Y PROCESOS DE TRATAMIENTO EN MATERIALES SENSIBLES TERMICAMENTE.
ES91112187T 1990-09-14 1991-07-20 Procedimiento e instalacion para el tratamiento reactivo reforzado por descarga por arco de tension continua de producto. Expired - Lifetime ES2067098T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4029268A DE4029268C2 (de) 1990-09-14 1990-09-14 Verfahren zur gleichspannungs-bogenentladungs-unterstützten, reaktiven Behandlung von Gut und Vakuumbehandlungsanlage zur Durchführung

Publications (1)

Publication Number Publication Date
ES2067098T3 true ES2067098T3 (es) 1995-03-16

Family

ID=6414297

Family Applications (1)

Application Number Title Priority Date Filing Date
ES91112187T Expired - Lifetime ES2067098T3 (es) 1990-09-14 1991-07-20 Procedimiento e instalacion para el tratamiento reactivo reforzado por descarga por arco de tension continua de producto.

Country Status (6)

Country Link
US (2) US5336326A (es)
EP (1) EP0478908B1 (es)
JP (1) JP3318336B2 (es)
AT (1) ATE117739T1 (es)
DE (2) DE4029268C2 (es)
ES (1) ES2067098T3 (es)

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CH687111A5 (de) * 1992-05-26 1996-09-13 Balzers Hochvakuum Verfahren zum Erzeugen einer Niederspannungsentladung, Vakuumbehandlungsanlage hierfuer sowie Anwendung des Verfahrens.
US7264850B1 (en) 1992-12-28 2007-09-04 Semiconductor Energy Laboratory Co., Ltd. Process for treating a substrate with a plasma
US6001431A (en) * 1992-12-28 1999-12-14 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating a magnetic recording medium
CA2126731A1 (en) * 1993-07-12 1995-01-13 Frank Jansen Hollow cathode array and method of cleaning sheet stock therewith
JP3146112B2 (ja) * 1993-12-24 2001-03-12 シャープ株式会社 プラズマｃｖｄ装置
TW359943B (en) * 1994-07-18 1999-06-01 Silicon Valley Group Thermal Single body injector and method for delivering gases to a surface
US6022414A (en) * 1994-07-18 2000-02-08 Semiconductor Equipment Group, Llc Single body injector and method for delivering gases to a surface
US6200389B1 (en) 1994-07-18 2001-03-13 Silicon Valley Group Thermal Systems Llc Single body injector and deposition chamber
US5928427A (en) * 1994-12-16 1999-07-27 Hwang; Chul-Ju Apparatus for low pressure chemical vapor deposition
DE59603312D1 (de) * 1995-01-25 1999-11-18 Balzers Ag Liechtenstein Verfahren zur reaktiven Schichtabscheidung
US5753045A (en) * 1995-01-25 1998-05-19 Balzers Aktiengesellschaft Vacuum treatment system for homogeneous workpiece processing
US5772770A (en) * 1995-01-27 1998-06-30 Kokusai Electric Co, Ltd. Substrate processing apparatus
US5660639A (en) * 1995-10-17 1997-08-26 Ford Motor Company Method and apparatus for plasma treating an article
TW356554B (en) * 1995-10-23 1999-04-21 Watkins Johnson Co Gas injection system for semiconductor processing
CH692446A5 (de) 1996-04-15 2002-06-28 Esec Sa Verfahren zur Herstellung von Werkstücken und von Teilen hierfür
US5906683A (en) * 1996-04-16 1999-05-25 Applied Materials, Inc. Lid assembly for semiconductor processing chamber
DE19705884A1 (de) * 1997-02-15 1998-08-20 Leybold Ag Plasma-Zündvorrichtung
JP3341619B2 (ja) * 1997-03-04 2002-11-05 東京エレクトロン株式会社 成膜装置
US20020011215A1 (en) 1997-12-12 2002-01-31 Goushu Tei Plasma treatment apparatus and method of manufacturing optical parts using the same
US6892669B2 (en) * 1998-02-26 2005-05-17 Anelva Corporation CVD apparatus
US5997649A (en) * 1998-04-09 1999-12-07 Tokyo Electron Limited Stacked showerhead assembly for delivering gases and RF power to a reaction chamber
DE19958016B4 (de) * 1998-12-02 2013-07-18 Stefan Laure Plasmagenerator
US6250250B1 (en) * 1999-03-18 2001-06-26 Yuri Maishev Multiple-cell source of uniform plasma
JP3366301B2 (ja) * 1999-11-10 2003-01-14 日本電気株式会社 プラズマｃｖｄ装置
US6502530B1 (en) * 2000-04-26 2003-01-07 Unaxis Balzers Aktiengesellschaft Design of gas injection for the electrode in a capacitively coupled RF plasma reactor
KR100419756B1 (ko) * 2000-06-23 2004-02-21 아넬바 가부시기가이샤 박막 형성 장치
JP4791637B2 (ja) * 2001-01-22 2011-10-12 キヤノンアネルバ株式会社 Ｃｖｄ装置とこれを用いた処理方法
US6444945B1 (en) 2001-03-28 2002-09-03 Cp Films, Inc. Bipolar plasma source, plasma sheet source, and effusion cell utilizing a bipolar plasma source
US6537928B1 (en) * 2002-02-19 2003-03-25 Asm Japan K.K. Apparatus and method for forming low dielectric constant film
US20030124842A1 (en) * 2001-12-27 2003-07-03 Applied Materials, Inc. Dual-gas delivery system for chemical vapor deposition processes
US6902774B2 (en) 2002-07-25 2005-06-07 Inficon Gmbh Method of manufacturing a device
US20040031565A1 (en) * 2002-08-13 2004-02-19 Taiwan Semiconductor Manufacturing Co., Ltd. Gas distribution plate for processing chamber
US7298092B2 (en) * 2004-09-28 2007-11-20 Old Dominion University Research Foundation Device and method for gas treatment using pulsed corona discharges
US7855513B2 (en) * 2004-09-28 2010-12-21 Old Dominion University Research Foundation Device and method for gas treatment using pulsed corona discharges
JP2007191792A (ja) * 2006-01-19 2007-08-02 Atto Co Ltd ガス分離型シャワーヘッド
EP2039799A4 (en) 2006-04-18 2015-09-30 Ulvac Inc FILM-EDGING DEVICE AND METHOD FOR PRODUCING A BARRIER FILM
JP4851539B2 (ja) * 2006-12-20 2012-01-11 株式会社島津製作所 イオン化装置
JP5006938B2 (ja) 2007-11-02 2012-08-22 キヤノンアネルバ株式会社 表面処理装置およびその基板処理方法
US8721836B2 (en) 2008-04-22 2014-05-13 Micron Technology, Inc. Plasma processing with preionized and predissociated tuning gases and associated systems and methods
JP5274918B2 (ja) 2008-07-07 2013-08-28 東京エレクトロン株式会社 プラズマ処理装置のチャンバー内部材の温度制御方法、チャンバー内部材及び基板載置台、並びにそれを備えたプラズマ処理装置
US8168268B2 (en) * 2008-12-12 2012-05-01 Ovishinsky Innovation, LLC Thin film deposition via a spatially-coordinated and time-synchronized process
US10304665B2 (en) 2011-09-07 2019-05-28 Nano-Product Engineering, LLC Reactors for plasma-assisted processes and associated methods
US9761424B1 (en) 2011-09-07 2017-09-12 Nano-Product Engineering, LLC Filtered cathodic arc method, apparatus and applications thereof
JP2014070233A (ja) * 2012-09-28 2014-04-21 Toppan Printing Co Ltd 成膜装置、ガスバリア性積層体および光学部材
US9416450B2 (en) * 2012-10-24 2016-08-16 Applied Materials, Inc. Showerhead designs of a hot wire chemical vapor deposition (HWCVD) chamber
DE102013225608A1 (de) 2013-12-11 2015-06-11 Apo Gmbh Massenkleinteilbeschichtung Vorrichtung und Verfahren zur Oberflächenbehandlung von Kleinteilen mittels Plasma
DE102015101294A1 (de) * 2015-01-29 2016-08-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung zum Erzeugen eines Hohlkathodenbogenentladungsplasmas
KR20170127724A (ko) * 2016-05-12 2017-11-22 삼성전자주식회사 플라즈마 처리 장치
US11834204B1 (en) 2018-04-05 2023-12-05 Nano-Product Engineering, LLC Sources for plasma assisted electric propulsion

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US4859490A (en) * 1986-07-23 1989-08-22 Sumitomo Electric Industries, Ltd. Method for synthesizing diamond
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JPH03207859A (ja) * 1990-01-10 1991-09-11 Hitachi Ltd イオン源装置およびイオンビーム処理装置

Also Published As

Publication number Publication date
JPH04232276A (ja) 1992-08-20
EP0478908B1 (de) 1995-01-25
DE4029268C2 (de) 1995-07-06
ATE117739T1 (de) 1995-02-15
DE4029268A1 (de) 1992-03-19
DE59104387D1 (de) 1995-03-09
EP0478908A1 (de) 1992-04-08
US5554255A (en) 1996-09-10
US5336326A (en) 1994-08-09
JP3318336B2 (ja) 2002-08-26

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