ES2068890T3 - Generador de iones de resonancia en un ciclotron electronico. - Google Patents

Generador de iones de resonancia en un ciclotron electronico.

Info

Publication number
ES2068890T3
ES2068890T3 ES89305275T ES89305275T ES2068890T3 ES 2068890 T3 ES2068890 T3 ES 2068890T3 ES 89305275 T ES89305275 T ES 89305275T ES 89305275 T ES89305275 T ES 89305275T ES 2068890 T3 ES2068890 T3 ES 2068890T3
Authority
ES
Spain
Prior art keywords
ionization chamber
electronic cyclotron
ion generator
magnetically permeable
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES89305275T
Other languages
English (en)
Inventor
James E Hipple
Gerry Dionne
Yasuhiro Torii
Masaru Shimada
Iwao Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Eaton Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Eaton Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Eaton Corp filed Critical Nippon Telegraph and Telephone Corp
Application granted granted Critical
Publication of ES2068890T3 publication Critical patent/ES2068890T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
    • H01J27/18—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation with an applied axial magnetic field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

UNA FUENTE (3) DE RESONANCIA DE CICLOTRON ELECTRONICA PARA UN IMPLANTADOR IONICO. LA FUENTE CONTIENE UNA CAMARA DE IONIZACION (54) RODEADA SEGUN SU LARGO DE UN ELECTROIMAN (162). UNA SERIE DE ELECTRODOS DE EXTRACCION (110, 111, 112) EN UN EXTREMO DE SALIDA DE LA CAMARA DE IONIZACION PERMITE QUE IONES OXIGENO CARGADOS POSITIVAMENTE PASEN A TRAVES DE ABERTURAS EN LOS ELECTRODOS. LA UNIFORMIDAD DEL CAMPO MAGNETICO ALINEADO AXIALMENTE EN LA CAMARA DE IONIZACION SE EXTIENDE A TRAVES DEL ELECTRODO DE EXTRACCION MEDIANTE UN ELECTRODO PERMEABLE MAGNETICAMENTE Y MEDIANTE EL USO DE MATERIAL NO PERMEABLE MAGNETICAMENTE PARA FIJAR OTROS DE DICHOS ELECTRODOS.
ES89305275T 1988-06-03 1989-05-24 Generador de iones de resonancia en un ciclotron electronico. Expired - Lifetime ES2068890T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/202,141 US4883968A (en) 1988-06-03 1988-06-03 Electron cyclotron resonance ion source

Publications (1)

Publication Number Publication Date
ES2068890T3 true ES2068890T3 (es) 1995-05-01

Family

ID=22748653

Family Applications (1)

Application Number Title Priority Date Filing Date
ES89305275T Expired - Lifetime ES2068890T3 (es) 1988-06-03 1989-05-24 Generador de iones de resonancia en un ciclotron electronico.

Country Status (7)

Country Link
US (1) US4883968A (es)
EP (1) EP0344969B1 (es)
JP (1) JP2903118B2 (es)
KR (1) KR910010099B1 (es)
CA (1) CA1321229C (es)
DE (1) DE68921370T2 (es)
ES (1) ES2068890T3 (es)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5053678A (en) * 1988-03-16 1991-10-01 Hitachi, Ltd. Microwave ion source
US5146138A (en) * 1988-04-05 1992-09-08 Mitsubishi Denki Kabushiki Kaisha Plasma processor
US5115167A (en) * 1988-04-05 1992-05-19 Mitsubishi Denki Kabushiki Kaisha Plasma processor
GB9009319D0 (en) * 1990-04-25 1990-06-20 Secr Defence Gaseous radical source
US5134299A (en) * 1991-03-13 1992-07-28 Eaton Corporation Ion beam implantation method and apparatus for particulate control
JP2700280B2 (ja) * 1991-03-28 1998-01-19 理化学研究所 イオンビーム発生装置および成膜装置および成膜方法
US5218210A (en) * 1992-02-18 1993-06-08 Eaton Corporation Broad beam flux density control
US5420415A (en) 1994-06-29 1995-05-30 Eaton Corporation Structure for alignment of an ion source aperture with a predetermined ion beam path
US5523652A (en) * 1994-09-26 1996-06-04 Eaton Corporation Microwave energized ion source for ion implantation
US5554853A (en) * 1995-03-10 1996-09-10 Krytek Corporation Producing ion beams suitable for ion implantation and improved ion implantation apparatus and techniques
US5661308A (en) * 1996-05-30 1997-08-26 Eaton Corporation Method and apparatus for ion formation in an ion implanter
US5821677A (en) * 1996-12-05 1998-10-13 Eaton Corporation Ion source block filament with laybrinth conductive path
US6053875A (en) * 1998-01-13 2000-04-25 Rosenbaum; Marvin Removable tip for an acoustic reflectometer
US6590324B1 (en) * 1999-09-07 2003-07-08 Veeco Instruments, Inc. Charged particle beam extraction and formation apparatus
US6452338B1 (en) 1999-12-13 2002-09-17 Semequip, Inc. Electron beam ion source with integral low-temperature vaporizer
US7064491B2 (en) * 2000-11-30 2006-06-20 Semequip, Inc. Ion implantation system and control method
US20050242293A1 (en) * 2003-01-07 2005-11-03 Benveniste Victor M Mounting mechanism for plasma extraction aperture
JP4795755B2 (ja) * 2005-08-25 2011-10-19 株式会社日立ハイテクノロジーズ 半導体基板の製造装置
JP2010517233A (ja) * 2007-01-25 2010-05-20 エヌエフエイビー・リミテッド 改良された粒子ビーム発生装置
FR2933532B1 (fr) * 2008-07-02 2010-09-03 Commissariat Energie Atomique Dispositif generateur d'ions a resonance cyclotronique electronique
US7842931B2 (en) * 2008-09-25 2010-11-30 Axcelis Technologies, Inc. Extraction electrode manipulator
US20100290575A1 (en) 2009-05-15 2010-11-18 Rosenthal Glenn B Particle beam isotope generator apparatus, system and method
FR2995493B1 (fr) * 2012-09-11 2014-08-22 Hydromecanique & Frottement Dispositif pour generer un plasma presentant une etendue importante le long d'un axe par resonnance cyclotronique electronique rce a partir d'un milieu gazeux
US9177708B2 (en) * 2013-06-14 2015-11-03 Varian Semiconductor Equipment Associates, Inc. Annular cooling fluid passage for magnets
US9244245B2 (en) 2013-11-08 2016-01-26 Institut National D'optique Auto-centering of an optical element within a barrel
WO2016011544A1 (en) * 2014-07-25 2016-01-28 Institut National D'optique Optical assemblies with tilt-controlled mounting of an optical element in a barrel
US10288095B2 (en) 2014-09-22 2019-05-14 Institut National D'optique Mounting of an optical element in a barrel using a flexible ring
EP3278162B1 (en) 2015-03-31 2019-07-24 Institut National d'Optique Optical assembly with translatable centered sleeve
JP6231039B2 (ja) * 2015-04-22 2017-11-15 住友重機械工業株式会社 サイクロトロン及び超伝導電磁石
KR20250022249A (ko) * 2017-01-18 2025-02-14 피닉스 엘엘씨 고출력 이온빔 발생기 시스템 및 방법
CN113611586A (zh) * 2021-08-05 2021-11-05 安徽费曼尔科技有限公司 一种ecr离子源装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6043620B2 (ja) * 1982-11-25 1985-09-28 日新ハイボルテージ株式会社 マイクロ波イオン源
US4793961A (en) * 1983-07-26 1988-12-27 The United States Of America As Represented By The Department Of Energy Method and source for producing a high concentration of positively charged molecular hydrogen or deuterium ions
FR2550681B1 (fr) * 1983-08-12 1985-12-06 Centre Nat Rech Scient Source d'ions a au moins deux chambres d'ionisation, en particulier pour la formation de faisceaux d'ions chimiquement reactifs
US4714834A (en) * 1984-05-09 1987-12-22 Atomic Energy Of Canada, Limited Method and apparatus for generating ion beams
JPH0616384B2 (ja) * 1984-06-11 1994-03-02 日本電信電話株式会社 マイクロ波イオン源
JPS61107643A (ja) * 1984-10-30 1986-05-26 Hitachi Ltd 蒸発炉付イオン源
JPS63257166A (ja) * 1987-04-13 1988-10-25 Nippon Telegr & Teleph Corp <Ntt> マイクロ波イオン源

Also Published As

Publication number Publication date
DE68921370T2 (de) 1995-10-19
CA1321229C (en) 1993-08-10
JPH0230038A (ja) 1990-01-31
KR900000951A (ko) 1990-01-31
KR910010099B1 (ko) 1991-12-16
DE68921370D1 (de) 1995-04-06
EP0344969A1 (en) 1989-12-06
JP2903118B2 (ja) 1999-06-07
EP0344969B1 (en) 1995-03-01
US4883968A (en) 1989-11-28

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