ES2077637T3 - Sistema de proteccion de tension. - Google Patents

Sistema de proteccion de tension.

Info

Publication number
ES2077637T3
ES2077637T3 ES90300998T ES90300998T ES2077637T3 ES 2077637 T3 ES2077637 T3 ES 2077637T3 ES 90300998 T ES90300998 T ES 90300998T ES 90300998 T ES90300998 T ES 90300998T ES 2077637 T3 ES2077637 T3 ES 2077637T3
Authority
ES
Spain
Prior art keywords
door
protection system
mos component
generator
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES90300998T
Other languages
English (en)
Inventor
Ann K Woo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of ES2077637T3 publication Critical patent/ES2077637T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Laying Of Electric Cables Or Lines Outside (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Control Of Eletrric Generators (AREA)

Abstract

UN SISTEMA DE PROTECCION ESTATICO DE ELECTRICIDAD PARA UTILIZACION CON UN COMPONENTE MOS (METAL OXIDE SEMICONDUCTOR METAL-OXIDO-SEMICONDUCTOR), QUE TIENE UNA ENTRADA DE PUERTA (52) INCLUYENDO UNA CAPA DE OXIDO. UNA PUERTA DE TRANSMISION (54) QUE TIENE UN GENERADOR Y UN ELEMENTO DE LA CORRIENTE DE DRENAJE, COMO UNA ENTRADA Y SALIDA RESPECTIVAMENTE, SE CONECTA A LA ENTRADA (52) DE PUERTA DEL COMPONENTE MOS PARA PROTEGERLO DE LAS DESCARGAS REPENTINAS DE SOBREVOLTAJE ELECTRICO. EL GENERADOR DE LA PUERTA DE TRANSMISION Y EL ELEMENTO DE LA CORRIENTE DE DRENAJE, INCLUYEN UNA CAPA DE OXIDO SUSTANCIALMENTE MAS GRUESA QUE LA CAPA DE OXIDO DE LA ENTRADA (52) DE PUERTA DEL COMPONENTE MOS.
ES90300998T 1989-02-16 1990-01-31 Sistema de proteccion de tension. Expired - Lifetime ES2077637T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/311,270 US4930037A (en) 1989-02-16 1989-02-16 Input voltage protection system

Publications (1)

Publication Number Publication Date
ES2077637T3 true ES2077637T3 (es) 1995-12-01

Family

ID=23206169

Family Applications (1)

Application Number Title Priority Date Filing Date
ES90300998T Expired - Lifetime ES2077637T3 (es) 1989-02-16 1990-01-31 Sistema de proteccion de tension.

Country Status (7)

Country Link
US (1) US4930037A (es)
EP (1) EP0385581B1 (es)
JP (1) JPH02262374A (es)
AT (1) ATE126948T1 (es)
DE (1) DE69021749T2 (es)
ES (1) ES2077637T3 (es)
GR (1) GR3017631T3 (es)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1314946C (en) * 1989-02-01 1993-03-23 Colin Harris Protection of analog reference and bias voltage inputs
US5159518A (en) * 1990-01-17 1992-10-27 Vlsi Technology, Inc. Input protection circuit for CMOS devices
US5396394A (en) * 1990-02-06 1995-03-07 International Business Machines Corp. ISDN device line protection circuit
US5561373A (en) * 1990-10-09 1996-10-01 Fujitsu Limited Method and device for detecting electrostatic stress applied to a product semiconductor device during each production process
KR920009015A (ko) * 1990-10-29 1992-05-28 김광호 반도체 칩의 보호회로
EP0508975A1 (de) * 1991-03-13 1992-10-14 AUSTRIA MIKRO SYSTEME INTERNATIONAL GESELLSCHAFT m.b.H. (Austria Micro Systems International Gesellschaft m.b.H.) Schutzschaltung für integrierte CMOS/BICMOS-Schaltungsanordnungen und Verfahren zur Herstellung einer derartigen Schutzschaltung
JPH05121670A (ja) * 1991-10-25 1993-05-18 Nec Corp 半導体入力保護装置
DE4135522C2 (de) * 1991-10-28 1996-11-21 Siemens Ag Schaltungsanordnung zum Schutz integrierter Schaltkreise
US5333093A (en) * 1991-11-06 1994-07-26 Siemens Aktiengesellschaft Protection apparatus for series pass MOSFETS
US5513064A (en) * 1991-12-13 1996-04-30 Texas Instruments Incorporated Method and device for improving I/O ESD tolerance
GB2273831B (en) * 1992-12-24 1997-03-26 Motorola Semiconducteurs Voltage protection circuit
JP2878587B2 (ja) * 1993-10-20 1999-04-05 株式会社日立製作所 半導体装置
JPH07122650A (ja) * 1993-10-22 1995-05-12 Yamaha Corp 半導体装置
US5473500A (en) * 1994-01-13 1995-12-05 Atmel Corporation Electrostatic discharge circuit for high speed, high voltage circuitry
EP0666596B1 (en) * 1994-02-03 2003-05-14 Infineon Technologies AG Protection apparatus for series pass MOSFETs
WO1997035345A1 (en) * 1996-03-20 1997-09-25 National Semiconductor Corporation Mosfet ic with on-chip protection against oxide damage caused by plasma-induced electrical charges
US5748028A (en) * 1996-10-31 1998-05-05 International Business Machines Corporation Method and apparatus for multi-level input voltage receiver circuit
US5793592A (en) * 1997-05-13 1998-08-11 International Business Machines Corporation Dynamic dielectric protection circuit for a receiver
US5946175A (en) * 1998-02-17 1999-08-31 Winbond Electronics Corp. Secondary ESD/EOS protection circuit
KR100438669B1 (ko) * 2001-12-31 2004-07-03 주식회사 하이닉스반도체 정전기 특성이 향상된 반도체 장치
US6900970B2 (en) * 2003-01-22 2005-05-31 Freescale Semiconductor, Inc. Electrostatic discharge circuit and method therefor
US6879476B2 (en) * 2003-01-22 2005-04-12 Freescale Semiconductor, Inc. Electrostatic discharge circuit and method therefor
JP2007081019A (ja) * 2005-09-13 2007-03-29 Oki Electric Ind Co Ltd 半導体装置
US8488288B2 (en) * 2008-06-27 2013-07-16 National Instruments Corporation Input protection method with variable tripping threshold and low parasitic elements
US9151096B2 (en) * 2009-09-20 2015-10-06 Hanchett Entry Systems, Inc. Access control device for a door
US8228109B2 (en) 2010-06-28 2012-07-24 Freescale Semiconductor, Inc. Transmission gate circuitry for high voltage terminal
US9762052B2 (en) * 2013-03-15 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Circuit and method of electrically decoupling nodes
CN106160717B (zh) 2015-04-03 2020-08-18 恩智浦美国有限公司 传输门电路

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3947727A (en) * 1974-12-10 1976-03-30 Rca Corporation Protection circuit for insulated-gate field-effect transistors
US4057844A (en) * 1976-06-24 1977-11-08 American Microsystems, Inc. MOS input protection structure
JPS5598867A (en) * 1979-01-19 1980-07-28 Mitsubishi Electric Corp Protecting device
US4760433A (en) * 1986-01-31 1988-07-26 Harris Corporation ESD protection transistors
SE455146B (sv) * 1986-10-28 1988-06-20 Ericsson Telefon Ab L M Spenningsskyddskrets
US4819047A (en) * 1987-05-15 1989-04-04 Advanced Micro Devices, Inc. Protection system for CMOS integrated circuits
JPH0748652B2 (ja) * 1987-07-23 1995-05-24 三菱電機株式会社 半導体回路装置の入力保護装置

Also Published As

Publication number Publication date
DE69021749T2 (de) 1996-02-29
EP0385581A1 (en) 1990-09-05
GR3017631T3 (en) 1996-01-31
ATE126948T1 (de) 1995-09-15
JPH02262374A (ja) 1990-10-25
EP0385581B1 (en) 1995-08-23
US4930037A (en) 1990-05-29
DE69021749D1 (de) 1995-09-28

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