ES2084148T3 - Aparato acoplador de ondas de radio frecuencia resonante mejorado que utiliza modos superiores. - Google Patents
Aparato acoplador de ondas de radio frecuencia resonante mejorado que utiliza modos superiores.Info
- Publication number
- ES2084148T3 ES2084148T3 ES91900585T ES91900585T ES2084148T3 ES 2084148 T3 ES2084148 T3 ES 2084148T3 ES 91900585 T ES91900585 T ES 91900585T ES 91900585 T ES91900585 T ES 91900585T ES 2084148 T3 ES2084148 T3 ES 2084148T3
- Authority
- ES
- Spain
- Prior art keywords
- radio wave
- coupling device
- modes
- wave coupling
- improved radio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000008878 coupling Effects 0.000 title 1
- 238000010168 coupling process Methods 0.000 title 1
- 238000005859 coupling reaction Methods 0.000 title 1
- 230000005684 electric field Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32247—Resonators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32678—Electron cyclotron resonance
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/02—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
- H05H1/16—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied electric and magnetic fields
- H05H1/18—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied electric and magnetic fields wherein the fields oscillate at very high frequency, e.g. in the microwave range, e.g. using cyclotron resonance
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Radar Systems Or Details Thereof (AREA)
- Aerials With Secondary Devices (AREA)
- Transmitters (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
SE DESCRIBE UN APARATO MEJORADO PARA GENERAR UNA REGION DE RESONANCIA CICLOTRONICA DEL ELECTRON (ECR) UNIFORME EN UNA REGION DE PLASMA (16) DE UNA CAMARA (15). EL APARATO UTILIZA MODOS MAS ALTOS DE CUSPIDES DE CAMPOS ELECTRICOS (16B) QUE SON ESENCIALMENTE PERPENDICULARES A LAS CUSPIDES DE CAMPO MAGNETICO (16A) DE FORMA CONTROLADA PARA PRODUCIR LA ECR. LOS MODOS SON OPTIMOS EN LA REGION ECR.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/424,720 US5081398A (en) | 1989-10-20 | 1989-10-20 | Resonant radio frequency wave coupler apparatus using higher modes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2084148T3 true ES2084148T3 (es) | 1996-05-01 |
Family
ID=23683623
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES91900585T Expired - Lifetime ES2084148T3 (es) | 1989-10-20 | 1990-10-15 | Aparato acoplador de ondas de radio frecuencia resonante mejorado que utiliza modos superiores. |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US5081398A (es) |
| EP (1) | EP0450061B1 (es) |
| JP (1) | JP2822103B2 (es) |
| AT (1) | ATE132687T1 (es) |
| DE (1) | DE69024632T2 (es) |
| DK (1) | DK0450061T3 (es) |
| ES (1) | ES2084148T3 (es) |
| GR (1) | GR3019184T3 (es) |
| WO (1) | WO1991006199A1 (es) |
Families Citing this family (61)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6784033B1 (en) | 1984-02-15 | 2004-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for the manufacture of an insulated gate field effect semiconductor device |
| US6786997B1 (en) | 1984-11-26 | 2004-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing apparatus |
| JPH0752718B2 (ja) | 1984-11-26 | 1995-06-05 | 株式会社半導体エネルギー研究所 | 薄膜形成方法 |
| US6113701A (en) | 1985-02-14 | 2000-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method, and system |
| US6673722B1 (en) | 1985-10-14 | 2004-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
| US6230650B1 (en) | 1985-10-14 | 2001-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
| US5804033A (en) * | 1990-09-26 | 1998-09-08 | Hitachi, Ltd. | Microwave plasma processing method and apparatus |
| FR2671931A1 (fr) * | 1991-01-22 | 1992-07-24 | Metal Process | Dispositif de repartition d'une energie micro-onde pour l'excitation d'un plasma. |
| IT1246684B (it) * | 1991-03-07 | 1994-11-24 | Proel Tecnologie Spa | Propulsore ionico a risonanza ciclotronica. |
| US5189446A (en) * | 1991-05-17 | 1993-02-23 | International Business Machines Corporation | Plasma wafer processing tool having closed electron cyclotron resonance |
| CA2102201A1 (en) * | 1991-05-21 | 1992-11-22 | Ebrahim Ghanbari | Cluster tool soft etch module and ecr plasma generator therefor |
| EP0554039B1 (en) * | 1992-01-30 | 1996-11-20 | Hitachi, Ltd. | Method and apparatus for generating plasma, and semiconductor processing methods |
| US5361016A (en) * | 1992-03-26 | 1994-11-01 | General Atomics | High density plasma formation using whistler mode excitation in a reduced cross-sectional area formation tube |
| US5444207A (en) * | 1992-03-26 | 1995-08-22 | Kabushiki Kaisha Toshiba | Plasma generating device and surface processing device and method for processing wafers in a uniform magnetic field |
| US5660744A (en) * | 1992-03-26 | 1997-08-26 | Kabushiki Kaisha Toshiba | Plasma generating apparatus and surface processing apparatus |
| US5225740A (en) * | 1992-03-26 | 1993-07-06 | General Atomics | Method and apparatus for producing high density plasma using whistler mode excitation |
| EP0566143B1 (en) * | 1992-04-17 | 1999-11-24 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for generating plasma |
| US5292370A (en) * | 1992-08-14 | 1994-03-08 | Martin Marietta Energy Systems, Inc. | Coupled microwave ECR and radio-frequency plasma source for plasma processing |
| AU5098293A (en) * | 1992-09-02 | 1994-03-29 | University Of North Carolina At Chapel Hill, The | Method for plasma processing at high pressures |
| JP2972477B2 (ja) * | 1993-01-27 | 1999-11-08 | 日本電気株式会社 | Rf・ecrプラズマエッチング装置 |
| US5359621A (en) * | 1993-05-11 | 1994-10-25 | General Atomics | High efficiency gas laser with axial magnetic field and tunable microwave resonant cavity |
| US5457298A (en) * | 1993-07-27 | 1995-10-10 | Tulip Memory Systems, Inc. | Coldwall hollow-cathode plasma device for support of gas discharges |
| US5470423A (en) * | 1994-01-25 | 1995-11-28 | Board Of Trustees Operating Michigan State University | Microwave pultrusion apparatus and method of use |
| JPH07245193A (ja) * | 1994-03-02 | 1995-09-19 | Nissin Electric Co Ltd | プラズマ発生装置及びプラズマ処理装置 |
| IT1269413B (it) * | 1994-10-21 | 1997-04-01 | Proel Tecnologie Spa | Sorgente di plasma a radiofrequenza |
| TW285746B (es) * | 1994-10-26 | 1996-09-11 | Matsushita Electric Industrial Co Ltd | |
| US5589737A (en) * | 1994-12-06 | 1996-12-31 | Lam Research Corporation | Plasma processor for large workpieces |
| US5718795A (en) * | 1995-08-21 | 1998-02-17 | Applied Materials, Inc. | Radial magnetic field enhancement for plasma processing |
| US6077787A (en) * | 1995-09-25 | 2000-06-20 | Board Of Trustees Operating Michigan State University | Method for radiofrequency wave etching |
| US5767628A (en) * | 1995-12-20 | 1998-06-16 | International Business Machines Corporation | Helicon plasma processing tool utilizing a ferromagnetic induction coil with an internal cooling channel |
| US5686796A (en) * | 1995-12-20 | 1997-11-11 | International Business Machines Corporation | Ion implantation helicon plasma source with magnetic dipoles |
| JP3225855B2 (ja) * | 1996-06-06 | 2001-11-05 | 株式会社島津製作所 | 薄膜形成装置 |
| US8617351B2 (en) * | 2002-07-09 | 2013-12-31 | Applied Materials, Inc. | Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction |
| US20070048882A1 (en) * | 2000-03-17 | 2007-03-01 | Applied Materials, Inc. | Method to reduce plasma-induced charging damage |
| US8048806B2 (en) | 2000-03-17 | 2011-11-01 | Applied Materials, Inc. | Methods to avoid unstable plasma states during a process transition |
| US6541781B1 (en) * | 2000-07-25 | 2003-04-01 | Axcelis Technologies, Inc. | Waveguide for microwave excitation of plasma in an ion beam guide |
| US7374636B2 (en) * | 2001-07-06 | 2008-05-20 | Applied Materials, Inc. | Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor |
| JP4009087B2 (ja) * | 2001-07-06 | 2007-11-14 | アプライド マテリアルズ インコーポレイテッド | 半導体製造装置における磁気発生装置、半導体製造装置および磁場強度制御方法 |
| US6759808B2 (en) * | 2001-10-26 | 2004-07-06 | Board Of Trustees Of Michigan State University | Microwave stripline applicators |
| KR100458328B1 (ko) * | 2002-03-27 | 2004-11-26 | 주성엔지니어링(주) | 플라즈마 감지장치 |
| TWI283899B (en) * | 2002-07-09 | 2007-07-11 | Applied Materials Inc | Capacitively coupled plasma reactor with magnetic plasma control |
| US20040058293A1 (en) * | 2002-08-06 | 2004-03-25 | Tue Nguyen | Assembly line processing system |
| US7458335B1 (en) | 2002-10-10 | 2008-12-02 | Applied Materials, Inc. | Uniform magnetically enhanced reactive ion etching using nested electromagnetic coils |
| US7059268B2 (en) * | 2002-12-20 | 2006-06-13 | Tokyo Electron Limited | Method, apparatus and magnet assembly for enhancing and localizing a capacitively coupled plasma |
| US7422654B2 (en) * | 2003-02-14 | 2008-09-09 | Applied Materials, Inc. | Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor |
| US20040227106A1 (en) * | 2003-05-13 | 2004-11-18 | Halling Alfred M. | System and methods for ion beam containment using localized electrostatic fields in an ion beam passageway |
| KR100988085B1 (ko) * | 2003-06-24 | 2010-10-18 | 삼성전자주식회사 | 고밀도 플라즈마 처리 장치 |
| JP4527432B2 (ja) * | 2004-04-08 | 2010-08-18 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| US20070020168A1 (en) * | 2005-05-13 | 2007-01-25 | Board Of Trustees Of Michigan State University | Synthesis of long and well-aligned carbon nanotubes |
| US7498592B2 (en) * | 2006-06-28 | 2009-03-03 | Wisconsin Alumni Research Foundation | Non-ambipolar radio-frequency plasma electron source and systems and methods for generating electron beams |
| DE102007051444B4 (de) * | 2007-10-25 | 2012-11-08 | Von Ardenne Anlagentechnik Gmbh | Verfahren und Vorrichtung zum Trockenätzen von kontinuierlich bewegten Materialien |
| WO2009065016A1 (en) * | 2007-11-16 | 2009-05-22 | Applied Materials, Inc. | Rpsc and rf feedthrough |
| US20100194278A1 (en) * | 2009-02-02 | 2010-08-05 | Chien Ouyang | Flow manipulation with micro plasma |
| GB2496879A (en) * | 2011-11-24 | 2013-05-29 | Creo Medical Ltd | Gas plasma disinfection and sterilisation |
| TW201328437A (zh) * | 2011-12-22 | 2013-07-01 | Atomic Energy Council | 具移動式磁鐵機構之電漿火炬裝置 |
| US10266802B2 (en) * | 2013-01-16 | 2019-04-23 | Orteron (T.O) Ltd. | Method for controlling biological processes in microorganisms |
| US8896211B2 (en) * | 2013-01-16 | 2014-11-25 | Orteron (T.O) Ltd | Physical means and methods for inducing regenerative effects on living tissues and fluids |
| US11037764B2 (en) | 2017-05-06 | 2021-06-15 | Applied Materials, Inc. | Modular microwave source with local Lorentz force |
| US10504699B2 (en) | 2018-04-20 | 2019-12-10 | Applied Materials, Inc. | Phased array modular high-frequency source |
| ES2696227B2 (es) * | 2018-07-10 | 2019-06-12 | Centro De Investig Energeticas Medioambientales Y Tecnologicas Ciemat | Fuente de iones interna para ciclotrones de baja erosion |
| US20210348274A1 (en) * | 2018-10-02 | 2021-11-11 | Evatec Ag | Plasma enhanced atomic layer deposition (peald) apparatus |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4507588A (en) * | 1983-02-28 | 1985-03-26 | Board Of Trustees Operating Michigan State University | Ion generating apparatus and method for the use thereof |
| US4585668A (en) * | 1983-02-28 | 1986-04-29 | Michigan State University | Method for treating a surface with a microwave or UHF plasma and improved apparatus |
| US4727293A (en) * | 1984-08-16 | 1988-02-23 | Board Of Trustees Operating Michigan State University | Plasma generating apparatus using magnets and method |
| US4630566A (en) * | 1984-08-16 | 1986-12-23 | Board Of Trustees Operating Michigan State University | Microwave or UHF plasma improved apparatus |
| FR2583250B1 (fr) * | 1985-06-07 | 1989-06-30 | France Etat | Procede et dispositif d'excitation d'un plasma par micro-ondes a la resonance cyclotronique electronique |
| JPS6276137A (ja) * | 1985-09-30 | 1987-04-08 | Hitachi Ltd | イオン源 |
| DE3810197A1 (de) * | 1987-03-27 | 1988-10-13 | Mitsubishi Electric Corp | Plasma-bearbeitungseinrichtung |
| JPH02141494A (ja) * | 1988-07-30 | 1990-05-30 | Kobe Steel Ltd | ダイヤモンド気相合成装置 |
-
1989
- 1989-10-20 US US07/424,720 patent/US5081398A/en not_active Expired - Lifetime
-
1990
- 1990-10-15 AT AT91900585T patent/ATE132687T1/de active
- 1990-10-15 DE DE69024632T patent/DE69024632T2/de not_active Expired - Fee Related
- 1990-10-15 WO PCT/US1990/005924 patent/WO1991006199A1/en not_active Ceased
- 1990-10-15 EP EP91900585A patent/EP0450061B1/en not_active Expired - Lifetime
- 1990-10-15 JP JP2515854A patent/JP2822103B2/ja not_active Expired - Fee Related
- 1990-10-15 DK DK91900585.0T patent/DK0450061T3/da active
- 1990-10-15 ES ES91900585T patent/ES2084148T3/es not_active Expired - Lifetime
-
1996
- 1996-03-05 GR GR960400586T patent/GR3019184T3/el unknown
Also Published As
| Publication number | Publication date |
|---|---|
| EP0450061A1 (en) | 1991-10-09 |
| JP2822103B2 (ja) | 1998-11-11 |
| DK0450061T3 (da) | 1996-04-29 |
| DE69024632D1 (de) | 1996-02-15 |
| EP0450061B1 (en) | 1996-01-03 |
| US5081398A (en) | 1992-01-14 |
| DE69024632T2 (de) | 1996-05-15 |
| ATE132687T1 (de) | 1996-01-15 |
| WO1991006199A1 (en) | 1991-05-02 |
| GR3019184T3 (en) | 1996-06-30 |
| EP0450061A4 (en) | 1992-08-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ES2084148T3 (es) | Aparato acoplador de ondas de radio frecuencia resonante mejorado que utiliza modos superiores. | |
| TW326617B (en) | Plasma generator and surface treatment apparatus using this plasma generator | |
| US4691662A (en) | Dual plasma microwave apparatus and method for treating a surface | |
| ATE161357T1 (de) | Verfahren und gerät zur erzeugung eines flachen plasmas mittels magnetischer kupplung | |
| ATE158384T1 (de) | Elektronzyklotronresonanz-ionentriebwerk | |
| TW335517B (en) | Apparatus and method for processing plasma | |
| JPH04503589A (ja) | 改良された共鳴無線周波数波結合器装置 | |
| MX166219B (es) | Procedimiento para preparar una superficie polimerica reforzante para una union directa con hule | |
| ATE89099T1 (de) | Enrichtung zum herstellen eines plasmas und zur behandlung von substraten darin. | |
| EP0382065A3 (en) | Apparatus for plasma processing | |
| EP0817237A3 (en) | Methods and apparatus for treating workpieces with plasmas | |
| SE8505310D0 (sv) | Vagenergigenerator | |
| ES466332A1 (es) | Perfeccionamientos en aparatos emisores de ondas electromag-neticas de alta frecuencia. | |
| FR2454251A1 (fr) | Circuit blinde depourvu de fuites d'ondes electromagnetiques perturbatrices | |
| DE69512371D1 (de) | Magnetisch verbesserte multiple kapazitive plasmagenerationsvorrichtung und verfahren | |
| ATE102395T1 (de) | Vorrichtung zur oberflaechenbehandlung von werkstuecken. | |
| ATE57112T1 (de) | Geraet zur erzeugung und abstrahlung von ultraschall,insbesondre fuer ultraschall-therapie. | |
| KR900014639A (ko) | 마이크로파 플라스마 에칭방법 및 장치 | |
| TW267291B (en) | Plasma treatment device | |
| DE3783355D1 (de) | Vorrichtung zur produktion von waerme. | |
| JPS6420621A (en) | Plasma etching apparatus | |
| ATE56119T1 (de) | Dissoziator fuer atom-maser. | |
| EP0481198A3 (en) | Scanned electron cyclotron resonance plasma source | |
| KR970025296A (ko) | 외부자장이 가해지는 평면형 고주파 유도결합 플라즈마 처리장치 | |
| ATE301869T1 (de) | Verfahren und vorrichtung zur beschichtung oder reinigung eines substrats |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG2A | Definitive protection |
Ref document number: 450061 Country of ref document: ES |