ES2086485T3 - Proceso termico rapido para obtener revestimientos de silice. - Google Patents

Proceso termico rapido para obtener revestimientos de silice.

Info

Publication number
ES2086485T3
ES2086485T3 ES91304930T ES91304930T ES2086485T3 ES 2086485 T3 ES2086485 T3 ES 2086485T3 ES 91304930 T ES91304930 T ES 91304930T ES 91304930 T ES91304930 T ES 91304930T ES 2086485 T3 ES2086485 T3 ES 2086485T3
Authority
ES
Spain
Prior art keywords
coatings
thermal process
silic
quick thermal
quick
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES91304930T
Other languages
English (en)
Inventor
Grish Chandra
Theresa Eileen Gentle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Application granted granted Critical
Publication of ES2086485T3 publication Critical patent/ES2086485T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/14—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silica
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1212—Zeolites, glasses
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/122—Inorganic polymers, e.g. silanes, polysilazanes, polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1279—Process of deposition of the inorganic material performed under reactive atmosphere, e.g. oxidising or reducing atmospheres
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6925—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising hydrogen silsesquioxane, e.g. HSQ

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
  • Chemically Coating (AREA)
  • Surface Treatment Of Glass (AREA)
  • Consolidation Of Soil By Introduction Of Solidifying Substances Into Soil (AREA)

Abstract

ESTA INVENCION ESTA BASADA EN EL DESCUBRIMIENTO DE QUE UN PROCESO TERMICO RAPIDO (RTP) PUEDE CONVERTIR REVESTIMIENTOS DE RESINA SILSESQUIOXANA DE HIDROGENO EN REVESTIMIENTOS DE SILICE CERAMICOS. ESTA TECNICA ES ESPECIALMENTE VALIDA PARA LA APLICACION DE CAPAS DIELECTRICAS Y PROTECTORAS EN DISPOSITIVOS ELECTRONICOS.
ES91304930T 1990-06-18 1991-05-31 Proceso termico rapido para obtener revestimientos de silice. Expired - Lifetime ES2086485T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/539,249 US5059448A (en) 1990-06-18 1990-06-18 Rapid thermal process for obtaining silica coatings

Publications (1)

Publication Number Publication Date
ES2086485T3 true ES2086485T3 (es) 1996-07-01

Family

ID=24150433

Family Applications (1)

Application Number Title Priority Date Filing Date
ES91304930T Expired - Lifetime ES2086485T3 (es) 1990-06-18 1991-05-31 Proceso termico rapido para obtener revestimientos de silice.

Country Status (7)

Country Link
US (1) US5059448A (es)
EP (1) EP0462715B1 (es)
JP (1) JP2561979B2 (es)
KR (2) KR950001671B1 (es)
CA (1) CA2043411A1 (es)
DE (1) DE69117353T2 (es)
ES (1) ES2086485T3 (es)

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5116637A (en) * 1990-06-04 1992-05-26 Dow Corning Corporation Amine catalysts for the low temperature conversion of silica precursors to silica
US5290399A (en) * 1991-02-05 1994-03-01 Advanced Micro Devices, Inc. Surface planarizing methods for integrated circuit devices
US5445894A (en) * 1991-04-22 1995-08-29 Dow Corning Corporation Ceramic coatings
US5339211A (en) * 1991-05-02 1994-08-16 Dow Corning Corporation Variable capacitor
US5436029A (en) * 1992-07-13 1995-07-25 Dow Corning Corporation Curing silicon hydride containing materials by exposure to nitrous oxide
JP3210457B2 (ja) * 1992-12-14 2001-09-17 ダウ・コ−ニング・コ−ポレ−ション 酸化ケイ素膜の形成方法
US5258334A (en) * 1993-01-15 1993-11-02 The U.S. Government As Represented By The Director, National Security Agency Process of preventing visual access to a semiconductor device by applying an opaque ceramic coating to integrated circuit devices
US5387480A (en) * 1993-03-08 1995-02-07 Dow Corning Corporation High dielectric constant coatings
JP3418458B2 (ja) * 1993-08-31 2003-06-23 富士通株式会社 半導体装置の製造方法
JP2739902B2 (ja) * 1993-09-30 1998-04-15 東京応化工業株式会社 酸化ケイ素系被膜形成用塗布液
EP0686680A4 (en) 1993-12-27 1996-07-24 Kawasaki Steel Co INSULATING FILM FOR SEMICONDUCTOR DEVICES, COATING FLUID USED TO FORM THE FILM, AND PROCESS FOR PRODUCING SAID FILM
KR950034495A (ko) * 1994-04-20 1995-12-28 윌리엄 이.힐러 반도체 장치 제조를 위한 고 수율 광 경화 공정
US5456952A (en) * 1994-05-17 1995-10-10 Lsi Logic Corporation Process of curing hydrogen silsesquioxane coating to form silicon oxide layer
JP3743519B2 (ja) * 1994-10-18 2006-02-08 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ シリコン−酸化物薄層の製造方法
US5530293A (en) * 1994-11-28 1996-06-25 International Business Machines Corporation Carbon-free hydrogen silsesquioxane with dielectric constant less than 3.2 annealed in hydrogen for integrated circuits
US5508238A (en) * 1995-05-11 1996-04-16 Dow Corning Corporation Monolithic ceramic bodies using modified hydrogen silsesquioxane resin
JP3149739B2 (ja) * 1995-07-14 2001-03-26 ヤマハ株式会社 多層配線形成法
JP3070450B2 (ja) * 1995-07-14 2000-07-31 ヤマハ株式会社 多層配線形成法
JP3696939B2 (ja) * 1995-08-11 2005-09-21 東京応化工業株式会社 シリカ系被膜の形成方法
DE69606942T2 (de) * 1995-09-25 2000-10-05 Dow Corning Corp., Midland Verwendung von präkeramischen Polymeren als Klebstoffe für Elektronik
US5609925A (en) 1995-12-04 1997-03-11 Dow Corning Corporation Curing hydrogen silsesquioxane resin with an electron beam
JPH09237785A (ja) * 1995-12-28 1997-09-09 Toshiba Corp 半導体装置およびその製造方法
JP3123449B2 (ja) * 1996-11-01 2001-01-09 ヤマハ株式会社 多層配線形成法
JP3082688B2 (ja) * 1996-11-05 2000-08-28 ヤマハ株式会社 配線形成法
JP3225872B2 (ja) 1996-12-24 2001-11-05 ヤマハ株式会社 酸化シリコン膜形成法
JPH10247686A (ja) * 1996-12-30 1998-09-14 Yamaha Corp 多層配線形成法
US6239441B1 (en) 1997-01-20 2001-05-29 Kabushiki Kaisha Toshiba Apparatus for manufacturing a semiconductor device and a method for manufacturing a semiconductor device
EP0860462A3 (en) * 1997-02-24 1999-04-21 Dow Corning Toray Silicone Company Limited Composition and method for the formation of silica thin films
US6218497B1 (en) 1997-04-21 2001-04-17 Alliedsignal Inc. Organohydridosiloxane resins with low organic content
US6143855A (en) * 1997-04-21 2000-11-07 Alliedsignal Inc. Organohydridosiloxane resins with high organic content
US6015457A (en) * 1997-04-21 2000-01-18 Alliedsignal Inc. Stable inorganic polymers
US6743856B1 (en) 1997-04-21 2004-06-01 Honeywell International Inc. Synthesis of siloxane resins
JP3909912B2 (ja) * 1997-05-09 2007-04-25 東京応化工業株式会社 シリカ系厚膜被膜形成方法
EP0881668A3 (en) 1997-05-28 2000-11-15 Dow Corning Toray Silicone Company, Ltd. Deposition of an electrically insulating thin film with a low dielectric constant
US5866197A (en) * 1997-06-06 1999-02-02 Dow Corning Corporation Method for producing thick crack-free coating from hydrogen silsequioxane resin
US6030904A (en) * 1997-08-21 2000-02-29 International Business Machines Corporation Stabilization of low-k carbon-based dielectrics
US5935650A (en) * 1997-10-17 1999-08-10 Lerch; Wilfried Method of oxidation of semiconductor wafers in a rapid thermal processing (RTP) system
TW439197B (en) * 1997-10-31 2001-06-07 Dow Corning Electronic coating having low dielectric constant
US6018002A (en) * 1998-02-06 2000-01-25 Dow Corning Corporation Photoluminescent material from hydrogen silsesquioxane resin
US6177199B1 (en) 1999-01-07 2001-01-23 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with low organic content
US6218020B1 (en) 1999-01-07 2001-04-17 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with high organic content
US6417115B1 (en) * 1998-05-26 2002-07-09 Axeclis Technologies, Inc. Treatment of dielectric materials
US5935638A (en) * 1998-08-06 1999-08-10 Dow Corning Corporation Silicon dioxide containing coating
US6124164A (en) * 1998-09-17 2000-09-26 Micron Technology, Inc. Method of making integrated capacitor incorporating high K dielectric
JP2003502449A (ja) * 1999-06-10 2003-01-21 ハネウエル・インターナシヨナル・インコーポレーテツド フォトリソグラフィ用スピンオンガラス反射防止コーティング
US20060263531A1 (en) * 2003-12-18 2006-11-23 Lichtenhan Joseph D Polyhedral oligomeric silsesquioxanes as glass forming coatings
US6358841B1 (en) 1999-08-23 2002-03-19 Taiwan Semiconductor Manufacturing Company Method of copper CMP on low dielectric constant HSQ material
US6440550B1 (en) * 1999-10-18 2002-08-27 Honeywell International Inc. Deposition of fluorosilsesquioxane films
US6472076B1 (en) 1999-10-18 2002-10-29 Honeywell International Inc. Deposition of organosilsesquioxane films
US6368400B1 (en) * 2000-07-17 2002-04-09 Honeywell International Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography
US20030054115A1 (en) * 2001-09-14 2003-03-20 Ralph Albano Ultraviolet curing process for porous low-K materials
US6705457B2 (en) * 2002-04-01 2004-03-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Transport device and method of transporting to-be-processed elements through a high-temperature zone
US6889410B2 (en) * 2003-01-31 2005-05-10 Indian Institute Of Science Rapid coating process and its application to lead-acid batteries
US7622399B2 (en) * 2003-09-23 2009-11-24 Silecs Oy Method of forming low-k dielectrics using a rapid curing process
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
RU2006125722A (ru) * 2003-12-18 2008-01-27 Хайбрид Плэстикс, Инк. (Us) Полиэдрические олигомерные силсесквиоксаны и металлизированные полиэдрические олигомерные силсесквиоксаны в качестве покрытий, композитов и добавок
JP5309316B2 (ja) * 2006-02-06 2013-10-09 国立大学法人東北大学 チップ素子
US7776404B2 (en) * 2006-11-30 2010-08-17 General Electric Company Methods for forming thermal oxidative barrier coatings on organic matrix composite substrates
US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
JP4954758B2 (ja) * 2007-03-19 2012-06-20 新日本製鐵株式会社 耐食性および塗料密着性に優れためっき鋼板の製造方法
JP2009078191A (ja) * 2007-09-25 2009-04-16 Ibaraki Prefecture 基材温度上昇の少ない加熱コーティング方法
US8163357B2 (en) * 2009-03-26 2012-04-24 Signet Armorlite, Inc. Scratch-resistant coatings with improved adhesion to inorganic thin film coatings
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US8457540B2 (en) 2009-09-15 2013-06-04 Ricoh Company, Ltd. Fixing device and image forming apparatus incorporating same
KR101303220B1 (ko) * 2010-03-16 2013-09-03 김진욱 활선 상태에서 교체 가능한 탈착용 안전 차단기
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
GB201209695D0 (en) * 2012-05-31 2012-07-18 Dow Corning Silicon wafer coated with passivation layer
US9741918B2 (en) 2013-10-07 2017-08-22 Hypres, Inc. Method for increasing the integration level of superconducting electronics circuits, and a resulting circuit
WO2016167892A1 (en) 2015-04-13 2016-10-20 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
KR102550414B1 (ko) * 2016-11-03 2023-07-04 삼성전자주식회사 반도체 소자의 제조 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4822697A (en) * 1986-12-03 1989-04-18 Dow Corning Corporation Platinum and rhodium catalysis of low temperature formation multilayer ceramics
US4911992A (en) * 1986-12-04 1990-03-27 Dow Corning Corporation Platinum or rhodium catalyzed multilayer ceramic coatings from hydrogen silsesquioxane resin and metal oxides
US4753855A (en) * 1986-12-04 1988-06-28 Dow Corning Corporation Multilayer ceramic coatings from metal oxides for protection of electronic devices
JP2624254B2 (ja) * 1987-05-22 1997-06-25 東京応化工業株式会社 シリカ系被膜の膜質改善方法
US4847162A (en) * 1987-12-28 1989-07-11 Dow Corning Corporation Multilayer ceramics coatings from the ceramification of hydrogen silsequioxane resin in the presence of ammonia
US4849296A (en) * 1987-12-28 1989-07-18 Dow Corning Corporation Multilayer ceramic coatings from metal oxides and hydrogen silsesquioxane resin ceramified in ammonia
US4885186A (en) * 1988-12-29 1989-12-05 Bell Communications Research, Inc. Method for preparation of silicate glasses of controlled index of refraction
US4911942A (en) * 1989-01-13 1990-03-27 Asama Chemical Co., Ltd. Stabilized oil and fat powder
CA2010335A1 (en) * 1989-03-09 1990-09-09 Ronald H. Baney Method for protective coating superconductors
US4973526A (en) * 1990-02-15 1990-11-27 Dow Corning Corporation Method of forming ceramic coatings and resulting articles

Also Published As

Publication number Publication date
US5059448A (en) 1991-10-22
EP0462715A1 (en) 1991-12-27
JPH04298542A (ja) 1992-10-22
KR930000800A (ko) 1993-01-15
CA2043411A1 (en) 1991-12-19
EP0462715B1 (en) 1996-02-28
KR920000663A (ko) 1992-01-29
DE69117353D1 (de) 1996-04-04
JP2561979B2 (ja) 1996-12-11
KR950001671B1 (ko) 1995-02-28
DE69117353T2 (de) 1996-09-05

Similar Documents

Publication Publication Date Title
ES2005955A6 (es) Un procedimiento para formar sobre un dispositivo electronico, un revestimiento de capas multiples del tipo de ceramica o parecido.
ES2056581T3 (es) Metodo de baja temperatura para convertir revestimientos precursores de silice en revestimientos ceramicos de silice.
ES2005469A6 (es) Un metodo para formar sobre un sustrato un reestimiento ceramico o semejante a ceramico, en multicapa.
DE68922635D1 (de) Heisspressen dichter keramischer Flachkörper als Ein- und Mehrschichtsubstrate für elektronische Bauelemente.
ES2088274T3 (es) Metodo para la produccion de polvo de nitruro de aluminio resistente a la humedad y polvo asi producido.
MX9401182A (es) Aparato de recubrimiento, procedimiento de recubrimiento de vidrio, compuestos y composiciones para recubrir vidrio y sustratos de vidrio recubiertos.
ES2047379T3 (es) Conversion a bajas temperaturas de precursores de silice en silice.
MY117336A (en) Polymer and ceramic composite electronic substrates
ES2139584T3 (es) Superficie de vidrio hidrofuga duradera.
ES2047987T3 (es) Fracciones de resina silsesquioxano de hidrogeno asi como su utilizacion como material de revestimiento.
EP0611067A3 (en) Coating of electronic substrates with silica from polysilazanes.
TW358999B (en) Integrated high-performance decoupling capacitor
ES2005468A6 (es) Procedimiento para formar sobre un sustrato un revestimiento de capas multiples del tipo de ceramica o parecido.
ES2096619T3 (es) Recubrimientos para substratos y dispositivos electronicos.
ATE226226T1 (de) Organosilan-oligomere
DE60236393D1 (de) Reflektierende Beschichtungen zur Ermässigung der Wärmeübertragung durch Strahlung
MY118221A (en) Substrate which is made from paper and is provided with an integrated circuit
KR930017846A (ko) 실리콘 침투된 세라믹 나노컴포지트 피복물
ES2055133T3 (es) Procedimiento para revestir sustratos metalicos con la ayuda de un producto primario en polvo y de un revestimiento superficial aplicado por inmersion, composiciones con el producto primario en polvo utilizadas y materiales compuestos obtenidos.
DK0891383T3 (da) Modificerede olyesterharpiks/organisk peroxid-systemer til pulverbelægninger, som kan påføres på temperaturfølsomme substra
ES2096397T3 (es) Laca en polvo y su uso.
TW343381B (en) Silicon nitride ceramic circuit substrate and semiconductor device using the same
MX9303079A (es) Composicion de capa protectora positiva.
AU4400093A (en) Sub-nanoscale electronic systems, devices and processes
MXPA03011974A (es) Metodo y composiciones a baja temperatura para producir conductores electricos.

Legal Events

Date Code Title Description
FG2A Definitive protection

Ref document number: 462715

Country of ref document: ES