ES2089042T3 - Dispositivo de cristal liquido y aparato visualizador. - Google Patents

Dispositivo de cristal liquido y aparato visualizador.

Info

Publication number
ES2089042T3
ES2089042T3 ES91102767T ES91102767T ES2089042T3 ES 2089042 T3 ES2089042 T3 ES 2089042T3 ES 91102767 T ES91102767 T ES 91102767T ES 91102767 T ES91102767 T ES 91102767T ES 2089042 T3 ES2089042 T3 ES 2089042T3
Authority
ES
Spain
Prior art keywords
layer
liquid crystal
alloy
ito
display device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES91102767T
Other languages
English (en)
Inventor
Takashi Enomoto
Toshifumi Yoshioka
Naoya Nishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of ES2089042T3 publication Critical patent/ES2089042T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Laminated Bodies (AREA)

Abstract

UN DISPOSITIVO DE CRISTAL LIQUIDO SE FORMA AL DISPONER UN CRISTAL LIQUIDO ENTRE UN PAR DE ELECTRODOS DISPUESTOS EN SENTIDO OPUESTO, AL MENOS UNO DE LOS CUALES ESTA PROVISTO DE UNA ESTRUCTURA LAMINADA QUE INCLUYE UNA PRIMERA CAPA DE ITO (INDIO, ESTAÑO, OXIDO) OTRA SEGUNDA CAPA DE MO (MOLIBDENO) O SU ALEACION, Y UNA TERCERA CAPA DE AL (ALUMINIO) O SU ALEACION, DISPUESTAS EN EL ORDEN MENCIONADO. DEBIDO A LA SEGUNDA CAPA BASADA EN EL MO, LA CAPA ITO ESTA PROTEGIDA DURANTE EL DESARROLLO DE OTRA CAPA FOTORESISTENTE FORMADA POR LA TERCERA CAPA BASADA EN EL AL AUN CUANDO ESTEN PRESENTES ALGUNOS PUNTITOS TRANSPARENTES EN LA TERCERA CAPA BASADA EN EL AL. LA SEGUNDA CAPA BASADA EN EL MO PODRA SER ATACADA POR UN ACIDO DE LA TERCERA CAPA BASADA EN EL AL, DE FORMA QUE EL PROCESO ENTERO NO SE COMPLIQUE DEBIDO A LA PROVISION DE UNA SEGUNDA CAPA BASADA EN EL MO.
ES91102767T 1990-02-26 1991-02-25 Dispositivo de cristal liquido y aparato visualizador. Expired - Lifetime ES2089042T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2042611A JP2673460B2 (ja) 1990-02-26 1990-02-26 液晶表示素子

Publications (1)

Publication Number Publication Date
ES2089042T3 true ES2089042T3 (es) 1996-10-01

Family

ID=12640827

Family Applications (1)

Application Number Title Priority Date Filing Date
ES91102767T Expired - Lifetime ES2089042T3 (es) 1990-02-26 1991-02-25 Dispositivo de cristal liquido y aparato visualizador.

Country Status (6)

Country Link
US (2) US5150233A (es)
EP (1) EP0444580B1 (es)
JP (1) JP2673460B2 (es)
AT (1) ATE139041T1 (es)
DE (1) DE69119928T2 (es)
ES (1) ES2089042T3 (es)

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JP2652072B2 (ja) * 1990-02-26 1997-09-10 キヤノン株式会社 遮光層の形成方法
JP2673460B2 (ja) * 1990-02-26 1997-11-05 キヤノン株式会社 液晶表示素子
US5243202A (en) * 1990-04-25 1993-09-07 Casio Computer Co., Ltd. Thin-film transistor and a liquid crystal matrix display device using thin-film transistors of this type
US5367179A (en) * 1990-04-25 1994-11-22 Casio Computer Co., Ltd. Thin-film transistor having electrodes made of aluminum, and an active matrix panel using same
JP2808480B2 (ja) * 1990-07-18 1998-10-08 キヤノン株式会社 液晶カラー表示素子用基板の製造方法
JP2808483B2 (ja) * 1990-08-30 1998-10-08 キヤノン株式会社 液晶素子
US5282068A (en) * 1990-11-08 1994-01-25 Canon Kabushiki Kaisha Liquid crystal display with opaque insulating layer and metal layer at and wider than inter-electrode gap and method of manufacturing
JP2952075B2 (ja) * 1991-06-12 1999-09-20 キヤノン株式会社 液晶素子の製造法
US5285300A (en) * 1991-10-07 1994-02-08 Canon Kabushiki Kaisha Liquid crystal device
JP2974520B2 (ja) * 1991-10-25 1999-11-10 キヤノン株式会社 電極基板及び液晶素子
JPH05341315A (ja) * 1992-06-08 1993-12-24 Hitachi Ltd 薄膜トランジスタ基板、液晶表示パネルおよび液晶表示装置
US5821622A (en) * 1993-03-12 1998-10-13 Kabushiki Kaisha Toshiba Liquid crystal display device
JP3106786B2 (ja) * 1993-08-26 2000-11-06 松下電器産業株式会社 半導体装置およびその製造方法
GB2283123B (en) * 1993-10-23 1997-10-22 Samsung Display Devices Co Ltd A method of forming an electrode for a liquid crystal display
US5644415A (en) * 1993-12-20 1997-07-01 Casio Computer Co., Ltd. Liquid crystal display device having wide field angle
EP0699375B1 (en) * 1994-02-22 1997-07-09 Koninklijke Philips Electronics N.V. Laser etching method
EP0768558B1 (en) * 1995-10-12 2002-05-29 Canon Kabushiki Kaisha Liquid crystal device and process for production thereof
KR0161462B1 (ko) * 1995-11-23 1999-01-15 김광호 액정 디스플레이에서의 게이트 패드 형성방법
US6320639B1 (en) 1996-03-11 2001-11-20 Canon Kabushiki Kaisha Liquid crystal device and process for production thereof
US6208400B1 (en) * 1996-03-15 2001-03-27 Canon Kabushiki Kaisha Electrode plate having metal electrodes of aluminum or nickel and copper or silver disposed thereon
GB2313226A (en) * 1996-05-17 1997-11-19 Sharp Kk Addressable matrix arrays
US6106907A (en) * 1996-06-25 2000-08-22 Canon Kabushiki Kaisha Electrode plate, liquid crystal device and production thereof
US6337520B1 (en) 1997-02-26 2002-01-08 Samsung Electronics Co., Ltd. Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and manufacturing method thereof
US6445004B1 (en) 1998-02-26 2002-09-03 Samsung Electronics Co., Ltd. Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof
US6532053B2 (en) 1996-12-18 2003-03-11 Hitachi, Ltd. Transverse electric field system liquid crystal display device suitable for improving aperture ratio
US6128053A (en) * 1997-10-22 2000-10-03 Mannesmann Vdo Ag Liquid crystal display with heater
US6346175B1 (en) * 1997-11-20 2002-02-12 International Business Machines Corporation Modification of in-plate refractory metal texture by use of refractory metal/nitride layer
US6184960B1 (en) 1998-01-30 2001-02-06 Sharp Kabushiki Kaisha Method of making a reflective type LCD including providing a protective metal film over a connecting electrode during at least one portion of the manufacturing process
US6356327B1 (en) 1999-03-29 2002-03-12 National Semiconductor Corporation Pixel array for silicon LC light valve featuring reflective metal surface underlying inter-pixel regions
US6233033B1 (en) * 1999-03-29 2001-05-15 National Semiconductor Corp. Pixel array for LC silicon light valve featuring pixels with overlapping edges
US6577362B1 (en) 1999-05-24 2003-06-10 National Semiconductor Corporation Pixel cell for silicon LC light valve having enhanced storage capacitance
KR100590916B1 (ko) * 1999-06-23 2006-06-19 비오이 하이디스 테크놀로지 주식회사 박막 트랜지스터 어레이 기판의 제조방법
US6373543B1 (en) 1999-07-16 2002-04-16 National Semiconductor Corporation Process for forming silicon LC pixel cell having planar alignment layers of uniform thickness
KR100312328B1 (ko) * 1999-08-06 2001-11-03 구본준, 론 위라하디락사 반사투과형 액정 표시장치
KR100315648B1 (ko) * 2000-01-21 2001-11-29 정지완 액정표시장치의 게이트 전극용 식각액
JP3670577B2 (ja) * 2000-01-26 2005-07-13 シャープ株式会社 液晶表示装置およびその製造方法
JP3617458B2 (ja) * 2000-02-18 2005-02-02 セイコーエプソン株式会社 表示装置用基板、液晶装置及び電子機器
GB0029315D0 (en) * 2000-12-01 2001-01-17 Koninkl Philips Electronics Nv Method of increasing the conductivity of a transparent conductive layer
KR100476050B1 (ko) * 2001-09-01 2005-03-10 비오이 하이디스 테크놀로지 주식회사 반사형 액정표시장치 및 그의 제조방법
KR100944300B1 (ko) * 2001-10-22 2010-02-24 미츠비시 가스 가가쿠 가부시키가이샤 알루미늄/몰리브덴 적층막의 에칭 방법
US20030122987A1 (en) * 2001-12-28 2003-07-03 Myung-Joon Kim Array substrate for a liquid crystal display device having multi-layered metal line and fabricating method thereof
JP4271915B2 (ja) * 2002-04-11 2009-06-03 オプトレックス株式会社 有機エレクトロルミネセンス表示素子、有機エレクトロルミネセンス表示装置
JP4761425B2 (ja) * 2004-05-12 2011-08-31 株式会社 日立ディスプレイズ 表示装置および表示装置の製造方法
US7642711B2 (en) * 2004-07-06 2010-01-05 Fujifilm Corporation Functional layer having wiring connected to electrode and barrier metal between electrode and wiring
KR101061850B1 (ko) * 2004-09-08 2011-09-02 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조방법
AT11941U1 (de) * 2010-02-12 2011-07-15 Plansee Metall Gmbh Berührungssensoranordnung
JP6332019B2 (ja) * 2014-12-25 2018-05-30 セイコーエプソン株式会社 電気光学装置及びその製造方法、電子機器

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JPS57161882A (en) * 1981-03-31 1982-10-05 Hitachi Ltd Display body panel
JPS62263676A (ja) * 1986-05-09 1987-11-16 Seiko Instr & Electronics Ltd 薄膜トランジスタの製造方法
NL8702508A (nl) * 1986-10-22 1988-05-16 Toppan Printing Co Ltd Electrodeplaat voor kleurenweergeefinrichting.
US4859036A (en) * 1987-05-15 1989-08-22 Canon Kabushiki Kaisha Device plate having conductive films selected to prevent pin-holes
JPS63289533A (ja) * 1987-05-22 1988-11-28 Oki Electric Ind Co Ltd 液晶ディスプレイ装置
US5000545A (en) * 1987-05-28 1991-03-19 Canon Kabushiki Kaisha Liquid crystal device with metal electrode partially overlying transparent electrode
JP2698357B2 (ja) * 1987-08-17 1998-01-19 キヤノン株式会社 電極間の短絡部分離法及び液晶パネルの製造法
JPH01179915A (ja) * 1988-01-11 1989-07-18 Canon Inc 液晶素子
US5187601A (en) * 1988-03-07 1993-02-16 Semiconductor Energy Laboratory Co., Ltd. Method for making a high contrast liquid crystal display including laser scribing opaque and transparent conductive strips simultaneously
JPH02132833A (ja) * 1988-11-11 1990-05-22 Matsushita Electric Ind Co Ltd 薄膜配線
JPH02228629A (ja) * 1989-02-28 1990-09-11 Sharp Corp 液晶表示装置
JP2673460B2 (ja) * 1990-02-26 1997-11-05 キヤノン株式会社 液晶表示素子
JPH04116620A (ja) * 1990-09-07 1992-04-17 Sharp Corp 液晶表示装置
JP2952075B2 (ja) * 1991-06-12 1999-09-20 キヤノン株式会社 液晶素子の製造法

Also Published As

Publication number Publication date
US5150233A (en) 1992-09-22
US5543946A (en) 1996-08-06
JPH03246524A (ja) 1991-11-01
EP0444580A2 (en) 1991-09-04
DE69119928T2 (de) 1996-11-28
DE69119928D1 (de) 1996-07-11
EP0444580A3 (en) 1992-03-11
EP0444580B1 (en) 1996-06-05
JP2673460B2 (ja) 1997-11-05
ATE139041T1 (de) 1996-06-15

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