ES2093822T3 - Dispositivo de silicio electroluminiscente. - Google Patents

Dispositivo de silicio electroluminiscente.

Info

Publication number
ES2093822T3
ES2093822T3 ES92907005T ES92907005T ES2093822T3 ES 2093822 T3 ES2093822 T3 ES 2093822T3 ES 92907005 T ES92907005 T ES 92907005T ES 92907005 T ES92907005 T ES 92907005T ES 2093822 T3 ES2093822 T3 ES 2093822T3
Authority
ES
Spain
Prior art keywords
silicon
layer
porous
quantum
conductive material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES92907005T
Other languages
English (en)
Inventor
Leigh Trevor Canham
Weng Yee Leong
Timothy Ingram Cox
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Secretary of State for Defence
Original Assignee
UK Secretary of State for Defence
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UK Secretary of State for Defence filed Critical UK Secretary of State for Defence
Application granted granted Critical
Publication of ES2093822T3 publication Critical patent/ES2093822T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/014—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
    • H10H20/8264—Materials of the light-emitting regions comprising only Group IV materials comprising polycrystalline, amorphous or porous Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/949—Radiation emitter using nanostructure
    • Y10S977/95—Electromagnetic energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

UN DISPOSITIVO (10) DE SILICIO ELECTROLUMINISCENTE INCLUYE UNA ESTRUCTURA (12) DE SILICIO LA CUAL COMPRENDE UNA CAPA (14) DE SILICIO HOMOGENEO Y UNA CAPA (16) DE SILICIO POROSO. LA CAPA (16) DE SILICIO POROSO TIENE POROS (20) INTERCALADOS LOS CUALES DEFINEN CONDUCTORES (18) CUANTICOS DE SILICIO. LOS CONDUCTORES (18) CUANTICOS TIENEN UNA CAPA (22) DE ESTABILIZACION SUPERFICIAL. LA CAPA (16) POROSA EXHIBE FOTOLUMINISCENCIA BAJO IRRADIACION ULTRA VIOLETA. LA CAPA POROSA (16) ESTA SATURADA POR UN MATERIAL CONDUCTOR TAL COMO UN ELECTROLITO (24) O UN METAL (48). EL MATERIAL CONDUCTOR (24) ASEGURA QUE UN CAMINO DE CORRIENTE ELECTRICAMENTE CONTINUA SE EXTIENDE A TRAVES DE LA CAPA (16) POROSA; EL NO DEGRADA LA SUPERFICIE (22) DE ESTABILIZACION DEL CONDUCTOR CUANTICO SUFICIENTEMENTE COMO PARA QUE EL CONDUCTOR (18) CUANTICO NO PRODUZCA LUMINISCENCIA, E INJERTA PORTADORES MINORITARIOS DENTRO DEL CONDUCTOR CUANTICO. UN ELECTRODO (26) SE CONECTA EL MATERIAL CONDUCTOR (24) Y LA CAPA DE SILICIO HOMOGENEO TIENE CONEXION (28) OHMICA. CUANDO SE POLARIZA EL ELECTRODO (26) ES EL ANODO Y LA ESTRUCTURA (12) DE SILICIO ES EL CATODO. ENTONCES SE OBSERVA LA ELECTROLUMINISCENCIA EN LA REGION VISIBLE DEL ESPECTRO.
ES92907005T 1991-04-17 1992-03-25 Dispositivo de silicio electroluminiscente. Expired - Lifetime ES2093822T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB919108176A GB9108176D0 (en) 1991-04-17 1991-04-17 Electroluminescent silicon device

Publications (1)

Publication Number Publication Date
ES2093822T3 true ES2093822T3 (es) 1997-01-01

Family

ID=10693425

Family Applications (1)

Application Number Title Priority Date Filing Date
ES92907005T Expired - Lifetime ES2093822T3 (es) 1991-04-17 1992-03-25 Dispositivo de silicio electroluminiscente.

Country Status (11)

Country Link
US (1) US5561304A (es)
EP (1) EP0580618B1 (es)
JP (1) JP3014756B2 (es)
KR (1) KR100249747B1 (es)
AT (1) ATE145111T1 (es)
CA (1) CA2108559C (es)
DE (1) DE69215084T2 (es)
DK (1) DK0580618T3 (es)
ES (1) ES2093822T3 (es)
GB (2) GB9108176D0 (es)
WO (1) WO1992019084A1 (es)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9213824D0 (en) * 1992-06-30 1992-08-12 Isis Innovation Light emitting devices
DE4315075A1 (de) * 1993-02-17 1994-11-10 Fraunhofer Ges Forschung Anordnung zur Plasmaerzeugung
US5689603A (en) * 1993-07-07 1997-11-18 Huth; Gerald C. Optically interactive nanostructure
ES2095793B1 (es) * 1994-01-18 1997-12-16 Univ Madrid Autonoma Metodo de formacion de estructuras luminiscentes de silicio poroso.
FR2716748B1 (fr) * 1994-02-25 1996-06-07 France Telecom Procédé de tapissage ou de remplissage par dépôt en phase gazeuse d'une structure en relief et application de ce procédé pour la fabrication d'éléments semi-conducteurs.
GB2299204A (en) * 1995-03-20 1996-09-25 Secr Defence Electroluminescent device
GB2313479B (en) * 1995-03-20 1999-10-20 Secr Defence Electroluminescent device comprising porous silicon
EP0797258B1 (en) * 1996-03-18 2011-07-20 Sony Corporation Method for making thin film semiconductor, solar cell, and light emitting diode
AU1604200A (en) * 1998-11-02 2000-05-22 Purdue Research Foundation Functionalized porous silicon surfaces
US6432724B1 (en) * 1998-11-25 2002-08-13 Micron Technology, Inc. Buried ground plane for high performance system modules
US6288390B1 (en) 1999-03-09 2001-09-11 Scripps Research Institute Desorption/ionization of analytes from porous light-absorbing semiconductor
WO2002090466A1 (en) * 2001-05-04 2002-11-14 Elam-T Limited Electroluminescent devices
US7400395B2 (en) * 2002-06-12 2008-07-15 Intel Corporation Metal coated nanocrystalline silicon as an active surface enhanced raman spectroscopy (SERS) substrate
US7361313B2 (en) * 2003-02-18 2008-04-22 Intel Corporation Methods for uniform metal impregnation into a nanoporous material
US6989897B2 (en) * 2002-06-12 2006-01-24 Intel Corporation Metal coated nanocrystalline silicon as an active surface enhanced Raman spectroscopy (SERS) substrate
US6970239B2 (en) * 2002-06-12 2005-11-29 Intel Corporation Metal coated nanocrystalline silicon as an active surface enhanced Raman spectroscopy (SERS) substrate
JP4760005B2 (ja) * 2004-12-17 2011-08-31 ソニー株式会社 発光素子、発光素子の製造方法および表示装置
CN100347870C (zh) * 2005-11-23 2007-11-07 天津大学 电致发光多孔硅材料的制备方法
WO2008045301A1 (en) * 2006-10-05 2008-04-17 Hitachi Chemical Co., Ltd. Well-aligned, high aspect-ratio, high-density silicon nanowires and methods of making the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3030542A (en) * 1959-06-23 1962-04-17 Westinghouse Electric Corp Electroluminescent device
US3082175A (en) * 1959-11-09 1963-03-19 Westinghouse Electric Corp Method of improving electroluminescent phosphor
US3621321A (en) * 1969-10-28 1971-11-16 Canadian Patents Dev Electroluminescent device with light emitting aromatic, hydrocarbon material
GB8927709D0 (en) * 1989-12-07 1990-02-07 Secretary Of The State For Def Silicon quantum wires
US5206749A (en) * 1990-12-31 1993-04-27 Kopin Corporation Liquid crystal display having essentially single crystal transistors pixels and driving circuits
US5324965A (en) * 1993-03-26 1994-06-28 The United States Of America As Represented By The Secretary Of The Army Light emitting diode with electro-chemically etched porous silicon

Also Published As

Publication number Publication date
CA2108559A1 (en) 1992-10-18
EP0580618A1 (en) 1994-02-02
GB9317309D0 (en) 1993-10-27
GB2268333B (en) 1994-11-23
DK0580618T3 (da) 1996-11-25
DE69215084T2 (de) 1997-03-27
GB9108176D0 (en) 1991-06-05
WO1992019084A1 (en) 1992-10-29
EP0580618B1 (en) 1996-11-06
JP3014756B2 (ja) 2000-02-28
US5561304A (en) 1996-10-01
KR100249747B1 (ko) 2000-04-01
ATE145111T1 (de) 1996-11-15
GB2268333A (en) 1994-01-05
JPH06509212A (ja) 1994-10-13
CA2108559C (en) 2002-02-19
DE69215084D1 (de) 1996-12-12

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