ES2103285T3 - Metodo de producir y pasivar dispositivos semiconductores. - Google Patents

Metodo de producir y pasivar dispositivos semiconductores.

Info

Publication number
ES2103285T3
ES2103285T3 ES91108781T ES91108781T ES2103285T3 ES 2103285 T3 ES2103285 T3 ES 2103285T3 ES 91108781 T ES91108781 T ES 91108781T ES 91108781 T ES91108781 T ES 91108781T ES 2103285 T3 ES2103285 T3 ES 2103285T3
Authority
ES
Spain
Prior art keywords
passivating
producing
semiconducting devices
preliminary treatment
construction elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES91108781T
Other languages
English (en)
Inventor
Jamal Bouayad-Amine
Wolfgang Kuebart
Joachim Scherb
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent NV
Original Assignee
Alcatel NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel NV filed Critical Alcatel NV
Application granted granted Critical
Publication of ES2103285T3 publication Critical patent/ES2103285T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/958—Passivation layer

Landscapes

  • Formation Of Insulating Films (AREA)
  • Light Receiving Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

EN UN METODO PARA LA FABRICACION Y PASIVACION DE CAMPOS DE ELEMENTOS DE CONSTRUCCION EN III-V EN SUBSTRATOS SEMICONDUCTORES SE LLEVA A CABO MEDIANTE UN TRATAMIENTO PRELIMINAR DE LA SUPERFICIE EN PLAMA-SUSTANCIA DE CARBONO-HALOGENOS ANTES DE LA COLOCACION DE LAS CAPAS DE PASIVACION Y AISLAMIENTO. LOS ELEMENTOS GENERADOS TIENEN UN MEJOR VALOR ELECTRICO QUE LOS ELEMENTOS DE CONSTRUCCION SIN EL TRATAMIENTO PRELIMINAR, CONCRETAMENTE PRESENTAN UNA CORRIENTE DE BLOQUEO MENOR (CORRIENTE OSCURA).
ES91108781T 1990-06-02 1991-05-29 Metodo de producir y pasivar dispositivos semiconductores. Expired - Lifetime ES2103285T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4017870A DE4017870A1 (de) 1990-06-02 1990-06-02 Verfahren zur herstellung und passivierung von halbleiterbauelementen

Publications (1)

Publication Number Publication Date
ES2103285T3 true ES2103285T3 (es) 1997-09-16

Family

ID=6407742

Family Applications (1)

Application Number Title Priority Date Filing Date
ES91108781T Expired - Lifetime ES2103285T3 (es) 1990-06-02 1991-05-29 Metodo de producir y pasivar dispositivos semiconductores.

Country Status (6)

Country Link
US (1) US5248635A (es)
EP (1) EP0464372B1 (es)
JP (1) JP3207869B2 (es)
AT (1) ATE152289T1 (es)
DE (2) DE4017870A1 (es)
ES (1) ES2103285T3 (es)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5593902A (en) * 1994-05-23 1997-01-14 Texas Instruments Incorporated Method of making photodiodes for low dark current operation having geometric enhancement
US5888890A (en) * 1994-08-12 1999-03-30 Lg Semicon Co., Ltd. Method of manufacturing field effect transistor
US20040241948A1 (en) * 2003-05-29 2004-12-02 Chun-Feng Nieh Method of fabricating stacked gate dielectric layer
DE10359371A1 (de) * 2003-12-18 2005-07-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Passivierte Endoberflächen
US10020187B2 (en) 2012-11-26 2018-07-10 Applied Materials, Inc. Apparatus and methods for backside passivation
DE102018124576A1 (de) * 2018-10-05 2020-04-09 Osram Opto Semiconductors Gmbh Verfahren zur herstellung eines halbleiterbauelements mit durchführung einer plasmabehandlung und halbleiterbauelement
US10666353B1 (en) * 2018-11-20 2020-05-26 Juniper Networks, Inc. Normal incidence photodetector with self-test functionality

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3969164A (en) * 1974-09-16 1976-07-13 Bell Telephone Laboratories, Incorporated Native oxide technique for preparing clean substrate surfaces
US4246296A (en) * 1979-02-14 1981-01-20 Bell Telephone Laboratories, Incorporated Controlling the properties of native films using selective growth chemistry
US4455351A (en) * 1983-06-13 1984-06-19 At&T Bell Laboratories Preparation of photodiodes
US4987008A (en) * 1985-07-02 1991-01-22 Semiconductor Energy Laboratory Co., Ltd. Thin film formation method
US4830705A (en) * 1987-07-16 1989-05-16 Texas Instruments Incorporated Method for etch of GaAs
US5098851A (en) * 1989-02-10 1992-03-24 Hitachi, Ltd. Fabricating a semiconductor photodetector by annealing to smooth the PN junction

Also Published As

Publication number Publication date
US5248635A (en) 1993-09-28
DE4017870A1 (de) 1991-12-05
EP0464372A3 (en) 1992-05-27
DE59108673D1 (de) 1997-05-28
EP0464372A2 (de) 1992-01-08
JPH04230033A (ja) 1992-08-19
EP0464372B1 (de) 1997-04-23
JP3207869B2 (ja) 2001-09-10
ATE152289T1 (de) 1997-05-15

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