ES2103778T3 - Metodo para la fabricacion de un dispositivo de memoria semiconductor, que tiene un condensador. - Google Patents

Metodo para la fabricacion de un dispositivo de memoria semiconductor, que tiene un condensador.

Info

Publication number
ES2103778T3
ES2103778T3 ES91304867T ES91304867T ES2103778T3 ES 2103778 T3 ES2103778 T3 ES 2103778T3 ES 91304867 T ES91304867 T ES 91304867T ES 91304867 T ES91304867 T ES 91304867T ES 2103778 T3 ES2103778 T3 ES 2103778T3
Authority
ES
Spain
Prior art keywords
capacitor
manufacture
memory device
semiconductor memory
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES91304867T
Other languages
English (en)
Inventor
Shunsuke Inoue
Yukihiko Sakashita
Yoshio Nakamura
Shin Kikuchi
Hiroshi Yuzurihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of ES2103778T3 publication Critical patent/ES2103778T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

UN DISPOSITIVO SEMICONDUCTOR COMPRENDE UN CONDENSADOR QUE CONSTA DE UNA REGION AL FORMADA SOBRE UN SUBSTRATO SEMICONDUCTOR. UNA PELICULA DE OXIDO AL FORMADA SOBRE LA SUPERFICIE DE DICHA ZONA AL Y ELECTRODOS OPUESTOS A DICHA ZONA AL CON LA INTERPOSICION DE DICHA PELICULA DE OXIDO AL.
ES91304867T 1990-05-31 1991-05-29 Metodo para la fabricacion de un dispositivo de memoria semiconductor, que tiene un condensador. Expired - Lifetime ES2103778T3 (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP13961590 1990-05-31
JP13961990 1990-05-31
JP30854490 1990-11-16

Publications (1)

Publication Number Publication Date
ES2103778T3 true ES2103778T3 (es) 1997-10-01

Family

ID=27317902

Family Applications (1)

Application Number Title Priority Date Filing Date
ES91304867T Expired - Lifetime ES2103778T3 (es) 1990-05-31 1991-05-29 Metodo para la fabricacion de un dispositivo de memoria semiconductor, que tiene un condensador.

Country Status (9)

Country Link
US (1) US5541454A (es)
EP (1) EP0463741B1 (es)
KR (1) KR950000142B1 (es)
CN (1) CN1040265C (es)
AT (1) ATE155928T1 (es)
DE (1) DE69126925T2 (es)
ES (1) ES2103778T3 (es)
MY (1) MY115269A (es)
SG (1) SG66275A1 (es)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3352744B2 (ja) * 1993-01-18 2002-12-03 株式会社半導体エネルギー研究所 Ｍｉｓ型半導体装置の作製方法
TW435820U (en) 1993-01-18 2001-05-16 Semiconductor Energy Lab MIS semiconductor device
KR970007967B1 (en) * 1994-05-11 1997-05-19 Hyundai Electronics Ind Fabrication method and semiconductor device
US5595928A (en) * 1995-09-18 1997-01-21 Vanguard International Semiconductor Corporation High density dynamic random access memory cell structure having a polysilicon pillar capacitor
US6025226A (en) * 1998-01-15 2000-02-15 International Business Machines Corporation Method of forming a capacitor and a capacitor formed using the method
US6177305B1 (en) 1998-12-17 2001-01-23 Lsi Logic Corporation Fabrication of metal-insulator-metal capacitive structures
DE10130934A1 (de) * 2001-06-27 2003-01-16 Infineon Technologies Ag Grabenkondensator und entsprechendes Herstellungsverfahren
EP1294021A1 (de) * 2001-08-31 2003-03-19 Infineon Technologies AG Kondensatoreinrichtung für eine Halbleiterschaltungsanordnung und Verfahren zu deren Herstellung
US7350292B2 (en) * 2004-03-19 2008-04-01 Hewlett-Packard Development Company, L.P. Method for affecting impedance of an electrical apparatus
JP4667030B2 (ja) 2004-12-10 2011-04-06 キヤノン株式会社 固体撮像装置用の半導体基板とその製造方法
KR101912286B1 (ko) * 2017-03-27 2018-10-29 삼성전기 주식회사 커패시터 부품
WO2021199432A1 (ja) * 2020-04-03 2021-10-07 三菱電機株式会社 伝送路長検出装置及びネットワーク通信装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279679A (en) * 1975-12-26 1977-07-04 Toshiba Corp Semiconductor memory device
NL173572C (nl) * 1976-02-12 1984-02-01 Philips Nv Halfgeleiderinrichting.
US4169270A (en) * 1976-12-09 1979-09-25 Fairchild Camera And Instrument Corporation Insulated-gate field-effect transistor with self-aligned contact hole to source or drain
US4352239A (en) * 1980-04-17 1982-10-05 Fairchild Camera And Instrument Process for suppressing electromigration in conducting lines formed on integrated circuits by control of crystalline boundary orientation
DE3217026A1 (de) * 1981-05-06 1982-12-30 Mitsubishi Denki K.K., Tokyo Halbleitervorrichtung
FR2526225B1 (fr) * 1982-04-30 1985-11-08 Radiotechnique Compelec Procede de realisation d'un condensateur integre, et dispositif ainsi obtenu
JPS58215067A (ja) * 1982-06-08 1983-12-14 Nec Corp 半導体集積回路装置
US4686554A (en) * 1983-07-02 1987-08-11 Canon Kabushiki Kaisha Photoelectric converter
JPS61156865A (ja) * 1984-12-28 1986-07-16 Nec Corp 半導体装置
US4811076A (en) * 1985-05-01 1989-03-07 Texas Instruments Incorporated Device and process with doubled capacitors
JPS62259466A (ja) * 1986-05-02 1987-11-11 Sony Corp メモリ装置
KR920005632B1 (ko) * 1987-03-20 1992-07-10 가부시기가이샤 히다찌세이사꾸쇼 다층 산화 실리콘 질화 실리콘 유전체의 반도체장치 및 그의 제조방법
JPS6437051A (en) * 1987-07-31 1989-02-07 Nec Corp Manufacture of semiconductor device
JPH01120035A (ja) * 1987-11-02 1989-05-12 Nec Corp 半導体装置及びその製造方法
JP2670288B2 (ja) * 1988-03-24 1997-10-29 株式会社東芝 半導体装置の製造方法
JPH0294471A (ja) * 1988-09-30 1990-04-05 Toshiba Corp 半導体記憶装置およびその製造方法
JPH0330474A (ja) * 1989-06-28 1991-02-08 Nec Corp シリコン半導体装置

Also Published As

Publication number Publication date
CN1056955A (zh) 1991-12-11
ATE155928T1 (de) 1997-08-15
KR910020924A (ko) 1991-12-20
EP0463741B1 (en) 1997-07-23
EP0463741A2 (en) 1992-01-02
KR950000142B1 (ko) 1995-01-10
DE69126925T2 (de) 1997-11-20
US5541454A (en) 1996-07-30
DE69126925D1 (de) 1997-08-28
SG66275A1 (en) 1999-07-20
CN1040265C (zh) 1998-10-14
MY115269A (en) 2003-05-31
EP0463741A3 (en) 1992-11-19

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