ES2105206T3 - Estructura y circuito de proteccion que comprende un rectificador de silicio mandado con tension de disparo reducida. - Google Patents

Estructura y circuito de proteccion que comprende un rectificador de silicio mandado con tension de disparo reducida.

Info

Publication number
ES2105206T3
ES2105206T3 ES93900739T ES93900739T ES2105206T3 ES 2105206 T3 ES2105206 T3 ES 2105206T3 ES 93900739 T ES93900739 T ES 93900739T ES 93900739 T ES93900739 T ES 93900739T ES 2105206 T3 ES2105206 T3 ES 2105206T3
Authority
ES
Spain
Prior art keywords
protection circuit
commanded
circuit including
trip voltage
silicon rectifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES93900739T
Other languages
English (en)
Inventor
Leslie Ronald Avery
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Sarnoff Corp
Original Assignee
Sharp Corp
Sarnoff Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp, Sarnoff Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of ES2105206T3 publication Critical patent/ES2105206T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
    • H10D89/713—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base region coupled to the collector region of the other transistor, e.g. silicon controlled rectifier [SCR] devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

SE PRESENTA UN DISPOSITIVO DE VOLTAJE DE BAJA RUPTURA (47) PARA PROTEGER UN CIRCUITO INTEGRADO (41) DE UNA ENERGIA TRANSITORIA. ESTE DISPOSITIVO SUMINISTRA UN SCR QUE TIENE UN VOLTAJE DE DISPARO REDUCIDO COMPATIBLE CON LOS PROCESADORES SUBMICRONICOS DE FABRICACION DE CIRCUITOS INTEGRADOS. TAMBIEN SE PRESENTA UN CIRCUITO DE PROTECCION SCR DE VOLTAJE DE RUPTURA.
ES93900739T 1991-12-09 1992-12-04 Estructura y circuito de proteccion que comprende un rectificador de silicio mandado con tension de disparo reducida. Expired - Lifetime ES2105206T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/803,880 US5274262A (en) 1989-05-17 1991-12-09 SCR protection structure and circuit with reduced trigger voltage

Publications (1)

Publication Number Publication Date
ES2105206T3 true ES2105206T3 (es) 1997-10-16

Family

ID=25187679

Family Applications (1)

Application Number Title Priority Date Filing Date
ES93900739T Expired - Lifetime ES2105206T3 (es) 1991-12-09 1992-12-04 Estructura y circuito de proteccion que comprende un rectificador de silicio mandado con tension de disparo reducida.

Country Status (7)

Country Link
US (1) US5274262A (es)
EP (1) EP0616728B1 (es)
JP (1) JP2699654B2 (es)
KR (1) KR0139648B1 (es)
DE (1) DE69221157T2 (es)
ES (1) ES2105206T3 (es)
WO (1) WO1993012544A1 (es)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2690786A1 (fr) * 1992-04-30 1993-10-29 Sgs Thomson Microelectronics Sa Dispositif de protection d'un circuit intégré contre les décharges électrostatiques.
US5343053A (en) * 1993-05-21 1994-08-30 David Sarnoff Research Center Inc. SCR electrostatic discharge protection for integrated circuits
US5616943A (en) * 1993-09-29 1997-04-01 At&T Global Information Solutions Company Electrostatic discharge protection system for mixed voltage application specific integrated circuit design
JPH07169922A (ja) * 1993-09-29 1995-07-04 At & T Global Inf Solutions Internatl Inc シリコン制御整流器
US5430595A (en) * 1993-10-15 1995-07-04 Intel Corporation Electrostatic discharge protection circuit
US5600525A (en) * 1994-08-17 1997-02-04 David Sarnoff Research Center Inc ESD protection circuit for integrated circuit
US5519242A (en) * 1994-08-17 1996-05-21 David Sarnoff Research Center, Inc. Electrostatic discharge protection circuit for a NMOS or lateral NPN transistor
US5907462A (en) * 1994-09-07 1999-05-25 Texas Instruments Incorporated Gate coupled SCR for ESD protection circuits
US5637900A (en) * 1995-04-06 1997-06-10 Industrial Technology Research Institute Latchup-free fully-protected CMOS on-chip ESD protection circuit
WO1996031907A1 (en) * 1995-04-06 1996-10-10 Industrial Technology Research Institute N-sided polygonal cell lay-out for multiple cell transistor
US5754380A (en) * 1995-04-06 1998-05-19 Industrial Technology Research Institute CMOS output buffer with enhanced high ESD protection capability
US5572394A (en) * 1995-04-06 1996-11-05 Industrial Technology Research Institute CMOS on-chip four-LVTSCR ESD protection scheme
JP2850801B2 (ja) * 1995-07-28 1999-01-27 日本電気株式会社 半導体素子
EP0785576A3 (en) * 1995-09-29 1998-10-07 Texas Instruments Incorporated Circuit including protection means
EP0803955A3 (en) * 1996-04-25 1998-05-20 Texas Instruments Incorporated An electrostatic discharge protection circuit
US5966599A (en) * 1996-05-21 1999-10-12 Lsi Logic Corporation Method for fabricating a low trigger voltage silicon controlled rectifier and thick field device
US5663860A (en) * 1996-06-28 1997-09-02 Harris Corporation High voltage protection circuits
US5821572A (en) * 1996-12-17 1998-10-13 Symbios, Inc. Simple BICMOS process for creation of low trigger voltage SCR and zener diode pad protection
JP4256544B2 (ja) 1998-08-25 2009-04-22 シャープ株式会社 半導体集積回路の静電気保護装置、その製造方法および静電気保護装置を用いた静電気保護回路
US6271999B1 (en) 1998-11-20 2001-08-07 Taiwan Semiconductor Manufacturing Company ESD protection circuit for different power supplies
US6594132B1 (en) 2000-05-17 2003-07-15 Sarnoff Corporation Stacked silicon controlled rectifiers for ESD protection
US6803633B2 (en) * 2001-03-16 2004-10-12 Sarnoff Corporation Electrostatic discharge protection structures having high holding current for latch-up immunity
US7525777B2 (en) * 2002-03-27 2009-04-28 Tower Manufacturing Corporation Fireguard circuit
US7196889B2 (en) * 2002-11-15 2007-03-27 Medtronic, Inc. Zener triggered overvoltage protection device
US20040094526A1 (en) * 2002-11-15 2004-05-20 Mccoy Edward D. Cutting laser beam nozzle assembly
US7244992B2 (en) * 2003-07-17 2007-07-17 Ming-Dou Ker Turn-on-efficient bipolar structures with deep N-well for on-chip ESD protection
US20050275029A1 (en) * 2004-06-15 2005-12-15 Jeffrey Watt Fast turn-on and low-capacitance SCR ESD protection
US7408754B1 (en) 2004-11-18 2008-08-05 Altera Corporation Fast trigger ESD device for protection of integrated circuits
DE102005022763B4 (de) * 2005-05-18 2018-02-01 Infineon Technologies Ag Elektronische Schaltkreis-Anordnung und Verfahren zum Herstellen eines elektronischen Schaltkreises
US20070263332A1 (en) * 2006-05-11 2007-11-15 Silicon Laboratories, Inc. System and method for high voltage protection of powered devices
US7732834B2 (en) * 2007-01-26 2010-06-08 Infineon Technologies Ag Semiconductor ESD device and method of making same
US8339758B2 (en) * 2008-05-01 2012-12-25 Semiconductor Components Industries, Llc Transient voltage suppressor and method
US20090273868A1 (en) * 2008-05-01 2009-11-05 Semiconductor Components Industries, Llc Transient voltage suppressor and method
US7638857B2 (en) * 2008-05-07 2009-12-29 United Microelectronics Corp. Structure of silicon controlled rectifier
US8653557B2 (en) * 2010-02-22 2014-02-18 Sofics Bvba High holding voltage electrostatic discharge (ESD) device
US9041054B2 (en) 2010-02-22 2015-05-26 Sofics Bvba High holding voltage electrostatic discharge protection device
US10580765B1 (en) * 2018-12-02 2020-03-03 Nanya Technology Corporation Semiconductor structure for electrostatic discharge protection

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5410228B2 (es) * 1973-08-20 1979-05-02
US4176372A (en) * 1974-03-30 1979-11-27 Sony Corporation Semiconductor device having oxygen doped polycrystalline passivation layer
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
JPS52102690A (en) * 1976-02-25 1977-08-29 Hitachi Ltd Semiconductor capacitance device
US4100561A (en) * 1976-05-24 1978-07-11 Rca Corp. Protective circuit for MOS devices
JPS5422781A (en) * 1977-07-22 1979-02-20 Hitachi Ltd Insulator gate protective semiconductor device
JPS5939904B2 (ja) * 1978-09-28 1984-09-27 株式会社東芝 半導体装置
YU43752B (en) * 1978-10-16 1989-12-31 Marko Petrovic Transistorized voltage limiter
JPS5696851A (en) * 1979-12-27 1981-08-05 Fujitsu Ltd Static breakdown preventive element
US4595941A (en) * 1980-12-03 1986-06-17 Rca Corporation Protection circuit for integrated circuit devices
US4400711A (en) * 1981-03-31 1983-08-23 Rca Corporation Integrated circuit protection device
US4567500A (en) * 1981-12-01 1986-01-28 Rca Corporation Semiconductor structure for protecting integrated circuit devices
US4797724A (en) * 1982-06-30 1989-01-10 Honeywell Inc. Reducing bipolar parasitic effects in IGFET devices
US4484244A (en) * 1982-09-22 1984-11-20 Rca Corporation Protection circuit for integrated circuit devices
US4513309A (en) * 1982-11-03 1985-04-23 Westinghouse Electric Corp. Prevention of latch-up in CMOS integrated circuits using Schottky diodes
US4622573A (en) * 1983-03-31 1986-11-11 International Business Machines Corporation CMOS contacting structure having degeneratively doped regions for the prevention of latch-up
IT1212767B (it) * 1983-07-29 1989-11-30 Ates Componenti Elettron Soppressore di sovratensioni a semiconduttore con tensione d'innesco predeterminabile con precisione.
JPS60152055A (ja) * 1984-01-20 1985-08-10 Matsushita Electric Ind Co Ltd 相補型ｍｏｓ半導体装置
US4683488A (en) * 1984-03-29 1987-07-28 Hughes Aircraft Company Latch-up resistant CMOS structure for VLSI including retrograded wells
US4633283A (en) * 1985-03-11 1986-12-30 Rca Corporation Circuit and structure for protecting integrated circuits from destructive transient voltages
US4760433A (en) * 1986-01-31 1988-07-26 Harris Corporation ESD protection transistors
GB8621839D0 (en) * 1986-09-10 1986-10-15 British Aerospace Electrostatic discharge protection circuit
US4939616A (en) * 1988-11-01 1990-07-03 Texas Instruments Incorporated Circuit structure with enhanced electrostatic discharge protection
US5072273A (en) * 1990-05-04 1991-12-10 David Sarnoff Research Center, Inc. Low trigger voltage SCR protection device and structure
ES2078343T3 (es) * 1989-05-17 1995-12-16 Sarnoff David Res Center Dispositivo de proteccion scr de bajo voltaje de disparo y estructura.

Also Published As

Publication number Publication date
EP0616728A1 (en) 1994-09-28
US5274262A (en) 1993-12-28
DE69221157D1 (de) 1997-09-04
EP0616728A4 (en) 1995-01-04
DE69221157T2 (de) 1998-01-08
JP2699654B2 (ja) 1998-01-19
WO1993012544A1 (en) 1993-06-24
JPH07506216A (ja) 1995-07-06
EP0616728B1 (en) 1997-07-23
KR0139648B1 (ko) 1998-06-01

Similar Documents

Publication Publication Date Title
ES2105206T3 (es) Estructura y circuito de proteccion que comprende un rectificador de silicio mandado con tension de disparo reducida.
BR9405158A (pt) Dispositivo semicondutor que inclui uma estrutura de isolamento,método de formação de um dispositivo de circuito integrado e método de formação de uma estrutura semicondutora
ES553302A0 (es) Un modulo electronico para uso en una estructura de montaje que tiene un disipador de calor asciado con la misma
ES8105898A1 (es) Un sistema de proteccion contra averias por descarga a tra- ves de la masa
MX9400129A (es) Placa de pared para receptaculo con circuiteria de proteccion integrada.
ATE122827T1 (de) Ptc-schaltungsschutzanordnungen.
ITMI951818A0 (it) Mosfet di potenza con protezione da sovracorrente e da temperatura elevata e circuito di controllo disaccoppiato dal diodo della struttura di base
KR970705861A (ko) 정전기 보호 회로(electrostatic protection circuit)
ES2077723T3 (es) Motor sin escobillas que incorpora un circuito integrado que tiene un circuito periferico monochip.
MX148628A (es) Mejoras a un circuito de proteccion contra sobrecargas para una carga que extrae corriente de una fuente de poder
AR004748A1 (es) Disposicion de circuito inversor
IT1272161B (it) Dispositivo a circuito integrato a semiconduttore con un convertitore riduttore di tensione interno
ES2041411T3 (es) Marbetes antirrobo y su uso.
IT1226438B (it) Circuito elettronico con dispositivo di protezione da variazioni di tensione della batteria di alimentazione.
ES2060758T3 (es) Dispositivo electrico que tiene conductores de conexion mejorados para montaje superficial sobre una placa de circuito.
IT1188398B (it) Struttura integrata di protezione da scariche elettrostatische e dispositivo a semiconduttore incorporante la stessa
ES2078343T3 (es) Dispositivo de proteccion scr de bajo voltaje de disparo y estructura.
ES2196535T3 (es) Dispositivo electronico que tiene un armazon protector.
AR017274A1 (es) Maquinas electricas rotantes con circuito magnetico
ES2112162B1 (es) Interruptor de circuito electronico que posee interrupcion de circuito por sobrecorriente y por baja tension.
ES2167858T3 (es) Caja para la instalacion de un aparato electrico en una canaleta para conducciones electricas.
ES557668A0 (es) Un dispositivo para proteger un circuito electrico de una transitoria de tension.
ES2055795T3 (es) Separador de salida de circuito integrado que tiene proteccion de esd mejorada.
IT1212157B (it) Dispositivo di protezione termica di un circuito elettronico integrato di potenza
ES2093506T3 (es) Sistema piloto para inversor electrico.

Legal Events

Date Code Title Description
FG2A Definitive protection

Ref document number: 616728

Country of ref document: ES