ES2105386T3 - Aparato para la deposicion a vapor de un plasma reactivo de corriente continua de un material electricamente aislante empleando para ello un anodo blindado. - Google Patents
Aparato para la deposicion a vapor de un plasma reactivo de corriente continua de un material electricamente aislante empleando para ello un anodo blindado.Info
- Publication number
- ES2105386T3 ES2105386T3 ES94104782T ES94104782T ES2105386T3 ES 2105386 T3 ES2105386 T3 ES 2105386T3 ES 94104782 T ES94104782 T ES 94104782T ES 94104782 T ES94104782 T ES 94104782T ES 2105386 T3 ES2105386 T3 ES 2105386T3
- Authority
- ES
- Spain
- Prior art keywords
- spray
- electrically insulating
- plasma
- atoms
- insulating material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000012777 electrically insulating material Substances 0.000 title abstract 4
- 230000008021 deposition Effects 0.000 title 1
- 238000004326 stimulated echo acquisition mode for imaging Methods 0.000 title 1
- 239000007921 spray Substances 0.000 abstract 3
- 238000005507 spraying Methods 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000013077 target material Substances 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3438—Electrodes other than cathode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Polymerisation Methods In General (AREA)
- Coating By Spraying Or Casting (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
EN UN REACTOR DE DEPOSICION DE VAPOR DE PLASMA PARA DEPOSITAR UN MATERIAL ELECTRICAMENTE AISLANTE SEGUN UN PROCESO DE PULVERIZACION DE CC EL PLASMA SE ESTABILIZA, MANTENIENDO SU EFICIENCIA DE PULVERIZACION GRACIAS A LA PRESENCIA DE UN ANODO SECUNDARIO (22), PREFERENTEMENTE MANTENIDO A UNA POLARIZACION POSITIVA RESPECTO AL ANODO PRIMARIO (15). EL ANODO SECUNDARIO (22) SE BLINDA DE LA EXPOSICION AL CHORRO DE MATERIAL PULVERIZADO SI BIEN QUEDA SITUADO LO SUFICIENTEMENTE CERCA DE LA DESCARGA DE PLASMA PARA ATRAER A LOS ELECTRONES DEL PLASMA Y MANTENER ASI SU EQUILIBRIO DE CARGA. EN UNA PULVERIZACION REACTIVA, LA CAMARA DE PULVERIZACION (10) CONTIENE TANTO UN GAS DE PULVERIZACION, POR EJEMPLO ARGON, Y UN GAS REACTIVO, POR EJEMPLO OXIGENO. LOS IONES POSITIVOS DEL GAS DE PULVERIZACION BOMBARDEAN UN BLANCO (17) DEL MATERIAL A PULVERIZAR. LOS ATOMOS DEL MATERIAL OBJETIVO, LOS ATOMOS PULVERIZADOS, SON EMITIDOS DESDE EL BLANCO (17) EN TODAS LAS DIRECCIONES HASTA ENTRAR EN LA CAMARA, ALGUNOS DE LOS CUALES CAEN SOBRE LA SUPERFICIE DEL SUSTRATO A REVESTIR POR PULVERIZACION. EN LA SUPERFICIE O EN LA CAMARA (10) SE COMBINAN QUIMICAMENTE CON EL GAS REACTIVO. EN EL CASO QUE SE PRESENTA EN ESTA INVENCION, LA COMBINACION QUIMICA FORMA UN REVESTIMIENTO ELECTRICAMENTE AISLANTE SOBRE EL SUSTRATO (19). EL MISMO MATERIAL ELECTRICAMENTE AISLANTE REVISTE EL RESTO DE LAS SUPERFICIES EXPUESTAS AL FLUJO DE ATOMOS PULVERIZADOS. EN UN ASPECTO DE LA INVENCION, EL ANODO SECUNDARIO POSITIVAMENTE POLARIZADO BLINDADO DE LOS ATOMOS PULVERIZADOS NO SE REVISTE CON EL MATERIAL ELECTRICAMENTE AISLANTE, CON LO CUAL MANTIENE SU CAPACIDAD DE SACAR LOS ELECTRONES DEL PLASMA.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/042,035 US6296743B1 (en) | 1993-04-02 | 1993-04-02 | Apparatus for DC reactive plasma vapor deposition of an electrically insulating material using a shielded secondary anode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2105386T3 true ES2105386T3 (es) | 1997-10-16 |
Family
ID=21919699
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES94104782T Expired - Lifetime ES2105386T3 (es) | 1993-04-02 | 1994-03-25 | Aparato para la deposicion a vapor de un plasma reactivo de corriente continua de un material electricamente aislante empleando para ello un anodo blindado. |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6296743B1 (es) |
| EP (1) | EP0618606B1 (es) |
| JP (1) | JPH06346236A (es) |
| KR (1) | KR100326503B1 (es) |
| AT (1) | ATE154162T1 (es) |
| DE (1) | DE69403538T2 (es) |
| ES (1) | ES2105386T3 (es) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH691686A5 (de) * | 1995-11-16 | 2001-09-14 | Unaxis Balzers Ag | Vakuumbehandlungskammer. |
| US6254746B1 (en) | 1996-05-09 | 2001-07-03 | Applied Materials, Inc. | Recessed coil for generating a plasma |
| KR100489917B1 (ko) * | 1996-05-09 | 2005-08-05 | 어플라이드 머티어리얼스, 인코포레이티드 | 플라즈마생성용코일을지지하는스탠드오프및코일지지방법 |
| DE19757353C1 (de) * | 1997-12-22 | 1999-07-29 | Fraunhofer Ges Forschung | Einrichtung zum Betreiben einer Niederdruckentladung |
| JP4717186B2 (ja) * | 2000-07-25 | 2011-07-06 | 株式会社アルバック | スパッタリング装置 |
| JP4703828B2 (ja) * | 2000-09-07 | 2011-06-15 | 株式会社アルバック | スパッタリング装置及び薄膜製造方法 |
| US6495000B1 (en) * | 2001-07-16 | 2002-12-17 | Sharp Laboratories Of America, Inc. | System and method for DC sputtering oxide films with a finned anode |
| JP2004018896A (ja) * | 2002-06-13 | 2004-01-22 | Matsushita Electric Ind Co Ltd | スパッタ膜の成膜方法 |
| DE102006028977B4 (de) | 2006-06-23 | 2012-04-12 | Qimonda Ag | Sputterdepositions-Vorrichtung |
| PE20171549A1 (es) * | 2015-03-18 | 2017-10-27 | Vision Ease Lp | Protector de anodo |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4038171A (en) * | 1976-03-31 | 1977-07-26 | Battelle Memorial Institute | Supported plasma sputtering apparatus for high deposition rate over large area |
| DE3427587A1 (de) * | 1984-07-26 | 1986-02-06 | Leybold-Heraeus GmbH, 5000 Köln | Zerstaeubungseinrichtung fuer katodenzerstaeubungsanlagen |
| DE3611492A1 (de) * | 1986-04-05 | 1987-10-22 | Leybold Heraeus Gmbh & Co Kg | Verfahren und vorrichtung zum beschichten von werkzeugen fuer die zerspanungs- und umformtechnik mit hartstoffschichten |
| DE3612721C3 (de) | 1986-04-16 | 1994-07-14 | Ver Glaswerke Gmbh | Durchlauf-Kathodenzerstäubungsanlage |
| DE4042289A1 (de) | 1990-12-31 | 1992-07-02 | Leybold Ag | Verfahren und vorrichtung zum reaktiven beschichten eines substrats |
| DE4125365C1 (es) | 1991-07-31 | 1992-05-21 | Multi-Arc Oberflaechentechnik Gmbh, 5060 Bergisch Gladbach, De |
-
1993
- 1993-04-02 US US08/042,035 patent/US6296743B1/en not_active Expired - Fee Related
-
1994
- 1994-03-25 DE DE69403538T patent/DE69403538T2/de not_active Expired - Fee Related
- 1994-03-25 AT AT94104782T patent/ATE154162T1/de not_active IP Right Cessation
- 1994-03-25 EP EP94104782A patent/EP0618606B1/en not_active Expired - Lifetime
- 1994-03-25 ES ES94104782T patent/ES2105386T3/es not_active Expired - Lifetime
- 1994-04-01 KR KR1019940006868A patent/KR100326503B1/ko not_active Expired - Fee Related
- 1994-04-04 JP JP6066101A patent/JPH06346236A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0618606B1 (en) | 1997-06-04 |
| DE69403538T2 (de) | 1998-01-29 |
| ATE154162T1 (de) | 1997-06-15 |
| JPH06346236A (ja) | 1994-12-20 |
| DE69403538D1 (de) | 1997-07-10 |
| EP0618606A1 (en) | 1994-10-05 |
| KR100326503B1 (ko) | 2002-06-20 |
| US6296743B1 (en) | 2001-10-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG2A | Definitive protection |
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