ES2118335T3 - Procedimiento de fabricacion de un componente semiconductor, especialmente un laser de arista enterrada. - Google Patents

Procedimiento de fabricacion de un componente semiconductor, especialmente un laser de arista enterrada.

Info

Publication number
ES2118335T3
ES2118335T3 ES94400210T ES94400210T ES2118335T3 ES 2118335 T3 ES2118335 T3 ES 2118335T3 ES 94400210 T ES94400210 T ES 94400210T ES 94400210 T ES94400210 T ES 94400210T ES 2118335 T3 ES2118335 T3 ES 2118335T3
Authority
ES
Spain
Prior art keywords
laser
arist
buried
semiconductor component
manufacturing procedure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES94400210T
Other languages
English (en)
Inventor
Leon Goldstein
Dominique Bonnevie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Original Assignee
Alcatel Alsthom Compagnie Generale dElectricite
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel Alsthom Compagnie Generale dElectricite filed Critical Alcatel Alsthom Compagnie Generale dElectricite
Application granted granted Critical
Publication of ES2118335T3 publication Critical patent/ES2118335T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/095—Laser devices

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
  • Surface Treatment Of Glass Fibres Or Filaments (AREA)
  • Optical Fibers, Optical Fiber Cores, And Optical Fiber Bundles (AREA)

Abstract

CON ARREGLO A ESTE PROCESO UN REVESTIMIENTO SEMICONDUCTOR DOPADO (10) DEBER SER DEPOSITADO SOBRE UNA SUPERFICIE PERTURBADA (S) DE UNA BASE SEMICONDUCTORA (9) DOPADA POR UN DOPANTE DEL MISMO TIPO DE CONDUCTIVIDAD QUE EL REVESTIMIENTO. SEGUN LA INVENCION, ANTES DEL DEPOSITO DE UNA CAPA PRINCIPAL (28) DE ESTE REVESTIMIENTO (10) SE DEPOSITA UNA CAPA SOBREDOPADA (24) QUE PRESENTA UNA CONCENTRACION DE DOPANTE SUPERIOR AL DOBLE DE LA CONCENTRACION MEDIA DEL REVESTIMIENTO. LA INVENCION SE APLICA EN PARTICULAR A LA FABRICACION DE UN LASER SEMICONDUCTOR PARA SISTEMA DE TELECOMUNICACION POR FIBRAS OPTICAS.
ES94400210T 1993-02-04 1994-02-01 Procedimiento de fabricacion de un componente semiconductor, especialmente un laser de arista enterrada. Expired - Lifetime ES2118335T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9301212A FR2701165B1 (fr) 1993-02-04 1993-02-04 Procédé de fabrication d'un composant semi-conducteur notamment d'un laser a arête enterrée, et composant fabriqué par ce procédé.

Publications (1)

Publication Number Publication Date
ES2118335T3 true ES2118335T3 (es) 1998-09-16

Family

ID=9443712

Family Applications (1)

Application Number Title Priority Date Filing Date
ES94400210T Expired - Lifetime ES2118335T3 (es) 1993-02-04 1994-02-01 Procedimiento de fabricacion de un componente semiconductor, especialmente un laser de arista enterrada.

Country Status (6)

Country Link
US (1) US5486489A (es)
EP (1) EP0610130B1 (es)
JP (1) JP3369697B2 (es)
DE (1) DE69411206T2 (es)
ES (1) ES2118335T3 (es)
FR (1) FR2701165B1 (es)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6151336A (en) * 1998-02-11 2000-11-21 Sorrento Networks, Inc. Time division multiplexing expansion subsystem
US6400478B1 (en) 1998-04-02 2002-06-04 Sorrento Networks, Inc. Wavelength-division-multiplexed optical transmission system with expanded bidirectional transmission capacity over a single fiber
US6298103B1 (en) 1998-06-16 2001-10-02 Sorrento Networks Corporation Flexible clock and data recovery module for a DWDM optical communication system with multiple clock rates
US6653213B2 (en) * 2000-12-21 2003-11-25 Bookham Technology, Plc Structure and method for doping of III-V compounds

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6232679A (ja) * 1985-08-05 1987-02-12 Nec Corp 半導体レ−ザ
JPS6482585A (en) * 1987-09-25 1989-03-28 Toshiba Corp Manufacture of buried semiconductor laser

Also Published As

Publication number Publication date
JPH077233A (ja) 1995-01-10
DE69411206D1 (de) 1998-07-30
FR2701165A1 (fr) 1994-08-05
DE69411206T2 (de) 1998-11-12
EP0610130B1 (fr) 1998-06-24
JP3369697B2 (ja) 2003-01-20
FR2701165B1 (fr) 1995-03-31
US5486489A (en) 1996-01-23
EP0610130A1 (fr) 1994-08-10

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