ES2138180T3 - Diodo de ruptura por avalancha sin desviacion. - Google Patents

Diodo de ruptura por avalancha sin desviacion.

Info

Publication number
ES2138180T3
ES2138180T3 ES95902059T ES95902059T ES2138180T3 ES 2138180 T3 ES2138180 T3 ES 2138180T3 ES 95902059 T ES95902059 T ES 95902059T ES 95902059 T ES95902059 T ES 95902059T ES 2138180 T3 ES2138180 T3 ES 2138180T3
Authority
ES
Spain
Prior art keywords
layer
region
gifted
craft
avalanche
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES95902059T
Other languages
English (en)
Inventor
Neil Davies
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Application granted granted Critical
Publication of ES2138180T3 publication Critical patent/ES2138180T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H10D8/25—Zener diodes 

Landscapes

  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Rectifiers (AREA)

Abstract

UN DIODO DE AVALANCHA CONSISTE EN UNA ARTESA (3) P-DOTADA, CONTENIENDO UNA PRIMERA REGION (4) P-DOTADA. UNA SEGUNDA REGION (6) N-DOTADA ESTA COLOCADA DE FORMA PROXIMA A LA ARTESA (3). LA SEGUNDA REGION (6) DESCANSA SOBRE UNA CAPA (2) P-DOTADA. LA ARTESA (3) Y LA CAPA (2) ESTAN SEPARADAS POR MEDIO DE UN INTERVALO (5) DEFINIDO DE FORMA PRECISA. LA DISPOSICION COMPLETA SE MONTA EN UN P-SUBSTRATO. UNA CAPA AISLANTE SE APLICA SOBRE EL AREA ENTRE LA ARTESA (3) Y LA CAPA (2), Y UNA CAPA (8) CONDUCTORA SE APLICA SOBRE LA CAPA (7) AISLANTE. LA CAPA (8) CONDUCTORA Y LA SEGUNDA REGION (6) ESTAN CONECTADAS A LA TENSION POSITIVA Y LA PRIMERA REGION (4) ESTA CONECTADA A UNA TENSION NEGATIVA. ESTA DISPOSICION PREVIENE DE CAIDA DE VOLTAJE A PARTIR DE DESPLAZAMIENTO. ADICIONALMENTE SE REDUCE LA RESISTENCIA DURANTE LA ROTURA DE TENSION A TRAVES DEL INTERVALO (5) DEFINIDO ENTRE LA ARTESA (3) Y LA CAPA (2).
ES95902059T 1993-12-18 1994-12-08 Diodo de ruptura por avalancha sin desviacion. Expired - Lifetime ES2138180T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4343365A DE4343365A1 (de) 1993-12-18 1993-12-18 Driftfreie Lawinendurchbruchdiode
PCT/DE1994/001462 WO1995017013A1 (de) 1993-12-18 1994-12-08 Driftfreie lawinendurchbruchdiode

Publications (1)

Publication Number Publication Date
ES2138180T3 true ES2138180T3 (es) 2000-01-01

Family

ID=6505453

Family Applications (1)

Application Number Title Priority Date Filing Date
ES95902059T Expired - Lifetime ES2138180T3 (es) 1993-12-18 1994-12-08 Diodo de ruptura por avalancha sin desviacion.

Country Status (6)

Country Link
US (1) US5691558A (es)
EP (1) EP0685116B1 (es)
JP (1) JPH08507178A (es)
DE (2) DE4343365A1 (es)
ES (1) ES2138180T3 (es)
WO (1) WO1995017013A1 (es)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6477504B1 (en) 1998-03-02 2002-11-05 Ix, Inc. Method and apparatus for automating the conduct of surveys over a network system
JP3472476B2 (ja) * 1998-04-17 2003-12-02 松下電器産業株式会社 半導体装置及びその駆動方法
JP3943322B2 (ja) * 2000-11-07 2007-07-11 松下電器産業株式会社 半導体装置
US7056761B1 (en) * 2003-03-14 2006-06-06 National Semiconductor Corporation Avalanche diode with breakdown voltage controlled by gate length
WO2009113013A2 (en) * 2008-03-14 2009-09-17 Nxp B.V. A sensor device and a method of detecting particles
US8344394B1 (en) 2009-09-15 2013-01-01 National Semiconductor Corporation High-speed avalanche light emitting diode (ALED) and related apparatus and method
EP2549541B1 (de) * 2011-07-19 2019-10-02 Elmos Semiconductor Aktiengesellschaft Festkörper-Diode
WO2018074228A1 (ja) * 2016-10-18 2018-04-26 株式会社デンソー 半導体装置およびその製造方法
JP6642507B2 (ja) 2016-10-18 2020-02-05 株式会社デンソー 半導体装置およびその製造方法
CN109659377B (zh) * 2018-12-13 2024-04-16 深圳市灵明光子科技有限公司 单光子雪崩二极管及制作方法、探测器阵列、图像传感器

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6092674A (ja) * 1983-10-27 1985-05-24 Rohm Co Ltd 定電圧ダイオ−ド
US5434442A (en) * 1990-07-02 1995-07-18 Motorola, Inc. Field plate avalanche diode
US5276350A (en) * 1991-02-07 1994-01-04 National Semiconductor Corporation Low reverse junction breakdown voltage zener diode for electrostatic discharge protection of integrated circuits

Also Published As

Publication number Publication date
JPH08507178A (ja) 1996-07-30
EP0685116B1 (de) 1999-08-25
EP0685116A1 (de) 1995-12-06
DE4343365A1 (de) 1995-07-13
US5691558A (en) 1997-11-25
DE59408661D1 (de) 1999-09-30
WO1995017013A1 (de) 1995-06-22

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