ES2144284T3 - Memoria solo de lectura y procedimiento para la activacion de la misma. - Google Patents

Memoria solo de lectura y procedimiento para la activacion de la misma.

Info

Publication number
ES2144284T3
ES2144284T3 ES96945894T ES96945894T ES2144284T3 ES 2144284 T3 ES2144284 T3 ES 2144284T3 ES 96945894 T ES96945894 T ES 96945894T ES 96945894 T ES96945894 T ES 96945894T ES 2144284 T3 ES2144284 T3 ES 2144284T3
Authority
ES
Spain
Prior art keywords
procedure
storage cells
activation
same
reading memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES96945894T
Other languages
English (en)
Inventor
Holger Sedlak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Application granted granted Critical
Publication of ES2144284T3 publication Critical patent/ES2144284T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Stereo-Broadcasting Methods (AREA)
  • Communication Control (AREA)
  • Electrotherapy Devices (AREA)
  • Dram (AREA)

Abstract

LA INVENCION DESCRIBE UNA MEMORIA DE DATOS FIJOS CON MULTIPLES CELDAS DE ALMACENAMIENTO, CUYO CONTENIDO SE PUEDE LEER ENVIANDO LOS COMANDOS OPORTUNOS POR LINEAS DE PALABRAS, DE BITS Y DE FUENTE (WL, BL, SL). DICHA MEMORIA SE CARACTERIZA POR QUE LAS CELDAS DE ALMACENAMIENTO, QUE SE CONTROLAN CON UNA UNICA LINEA DE PALABRAS (WL), ESTAN DIVIDIDAS EN MULTIPLES GRUPOS, A CADA UNO DE LOS CUALES LE CORRESPONDE UNA LINEA DE FUENTE COMUN (SL). DE ACUERDO CON EL PROCEDIMIENTO QUE PROPONE LA INVENCION, LAS CELULAS DE ALMACENAMIENTO SE LEEN POR GRUPOS.
ES96945894T 1995-12-06 1996-11-21 Memoria solo de lectura y procedimiento para la activacion de la misma. Expired - Lifetime ES2144284T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19545557A DE19545557A1 (de) 1995-12-06 1995-12-06 Festspeicher und Verfahren zur Ansteuerung desselben

Publications (1)

Publication Number Publication Date
ES2144284T3 true ES2144284T3 (es) 2000-06-01

Family

ID=7779374

Family Applications (1)

Application Number Title Priority Date Filing Date
ES96945894T Expired - Lifetime ES2144284T3 (es) 1995-12-06 1996-11-21 Memoria solo de lectura y procedimiento para la activacion de la misma.

Country Status (11)

Country Link
US (2) US6166952A (es)
EP (1) EP0882294B1 (es)
JP (1) JP2000501221A (es)
KR (1) KR100395975B1 (es)
CN (1) CN1106646C (es)
AT (1) ATE190427T1 (es)
DE (2) DE19545557A1 (es)
ES (1) ES2144284T3 (es)
IN (1) IN190574B (es)
RU (1) RU2190885C2 (es)
WO (1) WO1997021225A2 (es)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4679036B2 (ja) * 2002-09-12 2011-04-27 ルネサスエレクトロニクス株式会社 記憶装置
CN1327527C (zh) * 2004-10-15 2007-07-18 清华大学 一种能够实现反向读取的sonos型快闪存储器阵列构架的操作方法
US8144509B2 (en) * 2008-06-27 2012-03-27 Qualcomm Incorporated Write operation for spin transfer torque magnetoresistive random access memory with reduced bit cell size
US8432727B2 (en) 2010-04-29 2013-04-30 Qualcomm Incorporated Invalid write prevention for STT-MRAM array
US9001559B2 (en) * 2013-03-22 2015-04-07 Masahiro Takahashi Resistance change memory
US10014065B1 (en) * 2015-03-13 2018-07-03 Skan Technologies Corporation PPA (power performance area) efficient architecture for ROM (read only memory) and a ROM bitcell without a transistor

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58111190A (ja) 1981-12-25 1983-07-02 Hitachi Ltd 横型ダイナミツクｒｏｍ
JPS59186199A (ja) 1983-04-08 1984-10-22 Seiko Epson Corp 半導体メモリ
JPS63244393A (ja) * 1987-03-30 1988-10-11 Nec Corp 並列入出力回路を有する記憶装置
US5065364A (en) * 1989-09-15 1991-11-12 Intel Corporation Apparatus for providing block erasing in a flash EPROM
US5249158A (en) * 1991-02-11 1993-09-28 Intel Corporation Flash memory blocking architecture
EP0509184A1 (en) * 1991-04-18 1992-10-21 STMicroelectronics S.r.l. Flash memory erasable by sectors and related writing process
JP2632104B2 (ja) * 1991-11-07 1997-07-23 三菱電機株式会社 不揮発性半導体記憶装置
TW231343B (es) * 1992-03-17 1994-10-01 Hitachi Seisakusyo Kk
US5267196A (en) * 1992-06-19 1993-11-30 Intel Corporation Floating gate nonvolatile memory with distributed blocking feature
JPH06318683A (ja) * 1993-05-01 1994-11-15 Toshiba Corp 半導体記憶装置及びその製造方法
EP0637035B1 (en) 1993-07-29 1996-11-13 STMicroelectronics S.r.l. Circuit structure for a memory matrix and corresponding manufacturing method
JP3564610B2 (ja) * 1994-07-26 2004-09-15 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
KR0172831B1 (ko) * 1995-09-18 1999-03-30 문정환 비휘발성 메모리를 프로그램하는 방법
US5963478A (en) * 1995-12-06 1999-10-05 Siemens Aktiengesellschaft EEPROM and method of driving the same
US5687117A (en) * 1996-02-23 1997-11-11 Micron Quantum Devices, Inc. Segmented non-volatile memory array with multiple sources having improved source line decode circuitry
US5945717A (en) * 1997-03-11 1999-08-31 Micron Technology, Inc. Segmented non-volatile memory array having multiple sources

Also Published As

Publication number Publication date
US6166952A (en) 2000-12-26
IN190574B (es) 2003-08-09
WO1997021225A2 (de) 1997-06-12
RU2190885C2 (ru) 2002-10-10
WO1997021225A3 (de) 1997-08-14
EP0882294B1 (de) 2000-03-08
DE59604631D1 (de) 2000-04-13
EP0882294A2 (de) 1998-12-09
KR100395975B1 (ko) 2003-10-17
DE19545557A1 (de) 1997-06-12
CN1106646C (zh) 2003-04-23
ATE190427T1 (de) 2000-03-15
JP2000501221A (ja) 2000-02-02
USRE41734E1 (en) 2010-09-21
CN1203687A (zh) 1998-12-30
KR19990071848A (ko) 1999-09-27

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