ES2158310T3 - Procedimiento y aparato para la termosoldadura de tramos de perfiles para juntas de estanqueidad. - Google Patents

Procedimiento y aparato para la termosoldadura de tramos de perfiles para juntas de estanqueidad.

Info

Publication number
ES2158310T3
ES2158310T3 ES96914128T ES96914128T ES2158310T3 ES 2158310 T3 ES2158310 T3 ES 2158310T3 ES 96914128 T ES96914128 T ES 96914128T ES 96914128 T ES96914128 T ES 96914128T ES 2158310 T3 ES2158310 T3 ES 2158310T3
Authority
ES
Spain
Prior art keywords
extreme
profile
air chamber
procedure
thermosolding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES96914128T
Other languages
English (en)
Inventor
Paolo Cittadini
Umberto Lovison
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Industrie Ilpea SpA
Original Assignee
Industrie Ilpea SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Industrie Ilpea SpA filed Critical Industrie Ilpea SpA
Application granted granted Critical
Publication of ES2158310T3 publication Critical patent/ES2158310T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/493—Fuses, i.e. interconnections changeable from conductive to non-conductive
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Fuses (AREA)
  • Lining Or Joining Of Plastics Or The Like (AREA)

Abstract

SE EXPONE UN PROCEDIMIENTO PARA SOLDAR TERMICAMENTE TROZOS DE ESQUINA DE PERFILES (10, 11) PARA SELLAR GUARNICIONES, POR EJEMPLO, PARA FRIGORIFICOS O SIMILARES, DEL TIPO QUE COMPRENDE AL MENOS UNA CAMARA DE AIRE EXTENSIBLE O COMPRIMIBLE, EN FORMA DE FUELLE, PROCEDIMIENTO QUE COMPRENDE LOS PASOS DE COLOCAR DOS TROZOS DE PERFIL, CON SUS EXTREMOS OPUESTOS ENTRE SI, CALENTAR DICHOS EXTREMOS AL MISMO TIEMPO QUE SE APRIETAN SIMULTANEAMENTE (27, 28) CADA UNO DE DICHOS TROZOS DE PERFIL CERCA DE LOS CITADOS EXTREMOS, CON EL FIN DE OCLUIR TOTALMENTE LA CITADA CAMARA DE AIRE (13) A LO LARGO DE LA SECCION DE APRIETE, CERRAR EL MOLDE (19, 20) PARA CONSEGUIR QUE EL CITADO PAR DE TROZOS DE PERFIL SE PONGAN EN CONTACTO MUTUO COINCIDENTE EN SUS EXTREMOS CALIENTES, E INYECTAR AIRE EN EL INTERIOR DE LA CITADA CAMARA DE AIRE, EN LA ZONA COMPRENDIDA ENTRE LA SECCION DE APRIETE Y LOS EXTREMOS DE LOS CITADOS TROZOS DE PERFIL.
ES96914128T 1996-02-09 1996-04-25 Procedimiento y aparato para la termosoldadura de tramos de perfiles para juntas de estanqueidad. Expired - Lifetime ES2158310T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19604776A DE19604776A1 (de) 1996-02-09 1996-02-09 Auftrennbare Verbindungsbrücke (Fuse) und verbindbare Leitungsunterbrechung (Anti-Fuse), sowie Verfahren zur Herstellung und Aktivierung einer Fuse und einer Anti-Fuse
PCT/DE1997/000235 WO1997029515A2 (de) 1996-02-09 1997-02-06 Auftrennbare verbindungsbrücke (fuse) und verbindbare leitungsunterbrechung (anti-fuse), sowie verfahren zur herstellung und aktivierung einer fuse und einer anti-fuse

Publications (1)

Publication Number Publication Date
ES2158310T3 true ES2158310T3 (es) 2001-09-01

Family

ID=7784979

Family Applications (2)

Application Number Title Priority Date Filing Date
ES96914128T Expired - Lifetime ES2158310T3 (es) 1996-02-09 1996-04-25 Procedimiento y aparato para la termosoldadura de tramos de perfiles para juntas de estanqueidad.
ES97914128T Expired - Lifetime ES2198559T3 (es) 1996-02-09 1997-02-06 Puente de conexion (fusible) separable e interrupcion de la linea (anti-fusible) conectable asi como procedimiento para la fabricacion y activacion de un fusible y de un anti-fusible.

Family Applications After (1)

Application Number Title Priority Date Filing Date
ES97914128T Expired - Lifetime ES2198559T3 (es) 1996-02-09 1997-02-06 Puente de conexion (fusible) separable e interrupcion de la linea (anti-fusible) conectable asi como procedimiento para la fabricacion y activacion de un fusible y de un anti-fusible.

Country Status (10)

Country Link
EP (1) EP0879479B1 (es)
JP (1) JP3288385B2 (es)
KR (1) KR100414239B1 (es)
CN (1) CN1211856C (es)
AT (1) ATE239302T1 (es)
DE (2) DE19604776A1 (es)
ES (2) ES2158310T3 (es)
IN (1) IN191121B (es)
UA (1) UA50755C2 (es)
WO (1) WO1997029515A2 (es)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0992809A1 (de) 1998-09-28 2000-04-12 Siemens Aktiengesellschaft Schaltungsanordnung mit deaktivierbarem Scanpfad
DE10346460A1 (de) 2003-10-02 2005-05-19 Infineon Technologies Ag Anordnung und Verfahren zum Schutz von Fuses/Anti-Fuses
DE10349749B3 (de) * 2003-10-23 2005-05-25 Infineon Technologies Ag Anti-Fuse-Verbindung für integrierte Schaltungen sowie Verfahren zur Herstellung von Anti-Fuse-Verbindungen
JP4701034B2 (ja) * 2005-08-02 2011-06-15 パナソニック株式会社 半導体装置
US7576407B2 (en) * 2006-04-26 2009-08-18 Samsung Electronics Co., Ltd. Devices and methods for constructing electrically programmable integrated fuses for low power applications
US8542517B2 (en) 2011-06-13 2013-09-24 International Business Machines Corporation Low voltage programmable mosfet antifuse with body contact for diffusion heating

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1131790B (it) * 1979-08-20 1986-06-25 Rca Corp Complesso universale di collegamento interno per circuiti integrati cmos/sos ad alta densita'
EP0054102A3 (en) * 1980-12-11 1983-07-27 Rockwell International Corporation Very high density cells comprising a rom and method of manufacturing same
GB2100057A (en) * 1981-05-27 1982-12-15 Post Office Method of forming conductive tracks in a semi-conductor body by annealing
EP0094073B1 (en) * 1982-05-12 1988-07-27 Kabushiki Kaisha Toshiba Semiconductor device capable of structural selection
GB2215128B (en) * 1988-02-23 1991-10-16 Stc Plc Improvements in integrated circuits
JPH0320063A (ja) * 1989-06-16 1991-01-29 Matsushita Electron Corp 電気ヒューズ
FR2713398B1 (fr) * 1993-11-30 1996-01-19 Sgs Thomson Microelectronics Fusible pour circuit intégré.

Also Published As

Publication number Publication date
DE19604776A1 (de) 1997-08-14
IN191121B (es) 2003-09-27
KR100414239B1 (ko) 2004-02-18
WO1997029515A3 (de) 1997-09-18
EP0879479B1 (de) 2003-05-02
EP0879479A2 (de) 1998-11-25
KR19990082361A (ko) 1999-11-25
CN1210623A (zh) 1999-03-10
CN1211856C (zh) 2005-07-20
JP3288385B2 (ja) 2002-06-04
ATE239302T1 (de) 2003-05-15
UA50755C2 (uk) 2002-11-15
DE59709973D1 (de) 2003-06-05
WO1997029515A2 (de) 1997-08-14
JPH11506874A (ja) 1999-06-15
ES2198559T3 (es) 2004-02-01

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