ES2173243T3 - Dispositivo para la aplicacion de capas delgadas sobre un substrato - Google Patents

Dispositivo para la aplicacion de capas delgadas sobre un substrato

Info

Publication number
ES2173243T3
ES2173243T3 ES96119943T ES96119943T ES2173243T3 ES 2173243 T3 ES2173243 T3 ES 2173243T3 ES 96119943 T ES96119943 T ES 96119943T ES 96119943 T ES96119943 T ES 96119943T ES 2173243 T3 ES2173243 T3 ES 2173243T3
Authority
ES
Spain
Prior art keywords
chamber
vacuum
slim
coats
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES96119943T
Other languages
English (en)
Inventor
Joachim Dr Szczyrbowski
Gotz Teschner
Jurgen Bruch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oerlikon Deutschland Holding GmbH
Original Assignee
Unaxis Deutschland Holding GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unaxis Deutschland Holding GmbH filed Critical Unaxis Deutschland Holding GmbH
Application granted granted Critical
Publication of ES2173243T3 publication Critical patent/ES2173243T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Fluid Mechanics (AREA)
  • Physical Vapour Deposition (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

LA INVENCION SE REFIERE A UN DISPOSITIVO PARA LA APLICACION DE CAPAS DELGADAS SOBRE UN SUBSTRATO (8), ABARCANDO UNA FUENTE (14) DE CORRIENTE, QUE ESTA UNIDA CON UN CATODO (7), QUE SE DISPONE EN UNA CAMARA (5) DE VACIO Y CON UN OBJETIVO ACTUANDO CONJUNTAMENTE, ASI COMO UNA FUENTE (16) DE GAS DE PROCESO, QUE SE UNE CON LA CAMARA (5) DE VACIO. ENTRE LA CAMARA (5) DE VACIO Y LA FUENTE (16) DE GAS DE PROCESO SE CONECTA UNA VALVULA (12) DOSIFICADORA CONTROLADA POR MEDIO DE UN REGULADOR Y SE UNE CON AL MENOS UNA BOMBA (4) DE VACIO, CUYO LADO DE ASPIRACION SE CONECTA CON LA CAMARA (5) DE VACIO. SE CARACTERIZA A TRAVES DE UN SENSOR (3) DE MEDICION, EN PARTICULAR UN ELECTRODO DE MEDICION POTENCIOMETRICO, QUE COMPARA LA PORCION DE UN GAS EN LA CAMARA (5) DE VACIO O UNA CONDUCCION (17) DE AFLUENCIA, QUE SE UNE CON LA CAMARA (5) DE VACIO A TRAVES DE UN ELECTRODO DE REFERENCIA CON UN GAS DE REFERENCIA O UN CUERPO SOLIDO APLICADO EN EL ELECTRODO DE REFERENCIA. LA SEÑAL CONOCIDA O LA DIFERENCIA DE POTENCIAL OBTENIDA DE ACUERDO CON LA SITUACION SE GUIA A UNA UNIDAD (14) DE REGULACION QUE SE INCLUYE EN UN AMPLIFICADOR DE SEÑAL, QUE CONTROLA POR SU PARTE EL GENERADOR DE ABASTECIMIENTO DE CORRIENTE.
ES96119943T 1996-03-14 1996-12-12 Dispositivo para la aplicacion de capas delgadas sobre un substrato Expired - Lifetime ES2173243T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19609970A DE19609970A1 (de) 1996-03-14 1996-03-14 Vorrichtung zum Aufbringen dünner Schichten auf ein Substrat

Publications (1)

Publication Number Publication Date
ES2173243T3 true ES2173243T3 (es) 2002-10-16

Family

ID=7788229

Family Applications (1)

Application Number Title Priority Date Filing Date
ES96119943T Expired - Lifetime ES2173243T3 (es) 1996-03-14 1996-12-12 Dispositivo para la aplicacion de capas delgadas sobre un substrato

Country Status (7)

Country Link
US (1) US6743341B2 (es)
EP (1) EP0795623B1 (es)
JP (1) JP3954147B2 (es)
KR (1) KR100269006B1 (es)
DE (2) DE19609970A1 (es)
ES (1) ES2173243T3 (es)
TW (1) TW419527B (es)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19741708A1 (de) * 1997-09-22 1999-04-01 Leybold Systems Gmbh Vorrichtung zum Aufbringen dünner Schichten auf ein Substrat
DE29717418U1 (de) * 1997-09-26 1998-01-22 Leybold Systems GmbH, 63450 Hanau Vorrichtung zum Aufbringen dünner Schichten auf ein Substrat
US6106676A (en) * 1998-04-16 2000-08-22 The Boc Group, Inc. Method and apparatus for reactive sputtering employing two control loops
DE19956733A1 (de) * 1999-11-25 2001-06-28 Fraunhofer Ges Forschung Verfahren zur Regelung von Sputterprozessen
EP1268872B2 (de) * 2000-03-27 2010-01-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur regelung von reaktiven sputterprozessen
SE519931C2 (sv) * 2000-06-19 2003-04-29 Chemfilt R & D Ab Anordning och förfarande för pulsad, starkt joniserad magnetronsputtering
DE10216671A1 (de) * 2002-04-15 2003-12-18 Applied Films Gmbh & Co Kg Beschichtungsanlage
US20050145487A1 (en) * 2002-04-15 2005-07-07 Michael Geisler Coating installation
DE10347521A1 (de) 2002-12-04 2004-06-24 Leybold Optics Gmbh Verfahren zur Herstellung Multilayerschicht und Vorrichtung zur Durchführung des Verfahrens
JP4486838B2 (ja) 2003-04-25 2010-06-23 旭硝子株式会社 酸化ケイ素膜の製造方法および光学多層膜の製造方法
DE10359508B4 (de) 2003-12-18 2007-07-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Magnetronsputtern
JP4980576B2 (ja) * 2005-03-31 2012-07-18 日立オートモティブシステムズ株式会社 ペダル装置及びそれを備えた自動車
US8083859B2 (en) * 2008-05-30 2011-12-27 Applied Materials, Inc. Arrangement and method for removing alkali- or alkaline earth-metals from a vacuum coating chamber
CN102046833B (zh) * 2008-05-30 2013-03-27 应用材料公司 用于从真空镀膜室移除碱金属或碱土金属的装置及方法
EP2484796A1 (en) 2011-02-04 2012-08-08 Pivot a.s. Magnetron sputtering process
CN107532290B (zh) 2015-03-31 2022-04-01 布勒阿尔策瑙股份有限公司 用于生产涂覆的基板的方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4036167A (en) 1976-01-30 1977-07-19 Inficon Leybold-Heraeus Inc. Apparatus for monitoring vacuum deposition processes
US4428811A (en) * 1983-04-04 1984-01-31 Borg-Warner Corporation Rapid rate reactive sputtering of a group IVb metal
DE3509360A1 (de) * 1985-02-14 1986-08-14 Bbc Brown Boveri & Cie Verfahren zur messung des sauerstoffgehalts im abgas von brennkraftmaschinen
JP2515977B2 (ja) * 1986-03-11 1996-07-10 アネルバ株式会社 スパツタ装置
DE3709177A1 (de) * 1987-03-20 1988-09-29 Leybold Ag Verfahren und vorrichtung zur regelung der reaktiven schichtabscheidung auf substraten mittels magnetronkatoden
JPH02290966A (ja) * 1989-04-28 1990-11-30 Matsushita Electric Ind Co Ltd スパッタリング装置およびその制御方法
DE59207306D1 (de) * 1991-04-12 1996-11-14 Balzers Hochvakuum Verfahren und Anlage zur Beschichtung mindestens eines Gegenstandes
DE4138927C2 (de) * 1991-11-27 2000-01-13 Leybold Ag Vorrichtung zur Bestimmung der Gaskonzentration in einer Vakuumkammer

Also Published As

Publication number Publication date
DE59609093D1 (de) 2002-05-23
US20020157945A1 (en) 2002-10-31
EP0795623A1 (de) 1997-09-17
US6743341B2 (en) 2004-06-01
EP0795623B1 (de) 2002-04-17
KR970065762A (ko) 1997-10-13
KR100269006B1 (ko) 2000-10-16
JP3954147B2 (ja) 2007-08-08
TW419527B (en) 2001-01-21
JPH108247A (ja) 1998-01-13
DE19609970A1 (de) 1997-09-18

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