ES2179936T3 - Procedimiento y aparato para el deposito asistido por plasma sobre un sustrato de dos caras. - Google Patents

Procedimiento y aparato para el deposito asistido por plasma sobre un sustrato de dos caras.

Info

Publication number
ES2179936T3
ES2179936T3 ES96905921T ES96905921T ES2179936T3 ES 2179936 T3 ES2179936 T3 ES 2179936T3 ES 96905921 T ES96905921 T ES 96905921T ES 96905921 T ES96905921 T ES 96905921T ES 2179936 T3 ES2179936 T3 ES 2179936T3
Authority
ES
Spain
Prior art keywords
substrate
procedure
appliance
plasma assisted
sided substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES96905921T
Other languages
English (en)
Inventor
Richard Bosmans
Mehdi Cheaib
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EssilorLuxottica SA
Original Assignee
Essilor International Compagnie Generale dOptique SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=9476797&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ES2179936(T3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Essilor International Compagnie Generale dOptique SA filed Critical Essilor International Compagnie Generale dOptique SA
Application granted granted Critical
Publication of ES2179936T3 publication Critical patent/ES2179936T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

EL PROCEDIMIENTO SEGUN LA INVENCION ES DEL TIPO SEGUN EL CUAL, PARA LA DEPOSICION DE AL MENOS UNA CAPA DELGADA SOBRE UN SUSTRATO (10) DE DOBLE CARA (11A, 11B), SE EMPLEA UN PLASMA EN COOPERACION CON EL CUAL INTERVIENE UN FLUIDO PRECURSOR CUYOS PRODUCTOS DE REACCION CON EL PLASMA DAN LUGAR A LA DEPOSICION BUSCADA. SEGUN LA INVENCION, PARA UN TRATAMIENTO SIMULTANEO DE LAS DOS CARAS (11A, 11B) DEL SUSTRATO (10), SE EMPLEAN DOS PLASMAS DISTINTOS (12A, 12B), INTERVINIENDO UNO DEL LADO DE UNA DE LAS CARAS (11A, 11B) DE ESTE SUSTRATO (10), INTERVINIENDO EL OTRO DEL LADO DE LA OTRA CARA DE ESTAS. APLICACION, PARTICULARMENTE, EN EL TRATAMIENTO ANTIRREFLEJO DE UNA LENTILLA OFTALMICA DE MATERIAL ORGANICO.
ES96905921T 1995-03-07 1996-03-06 Procedimiento y aparato para el deposito asistido por plasma sobre un sustrato de dos caras. Expired - Lifetime ES2179936T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9502617A FR2731370B1 (fr) 1995-03-07 1995-03-07 Procede pour le depot assiste par plasma d'au moins une couche mince sur un substrat a deux faces, et reacteur correspondant

Publications (1)

Publication Number Publication Date
ES2179936T3 true ES2179936T3 (es) 2003-02-01

Family

ID=9476797

Family Applications (1)

Application Number Title Priority Date Filing Date
ES96905921T Expired - Lifetime ES2179936T3 (es) 1995-03-07 1996-03-06 Procedimiento y aparato para el deposito asistido por plasma sobre un sustrato de dos caras.

Country Status (6)

Country Link
EP (1) EP0815284B1 (es)
JP (1) JPH11505570A (es)
DE (1) DE69622543T2 (es)
ES (1) ES2179936T3 (es)
FR (1) FR2731370B1 (es)
WO (1) WO1996027690A1 (es)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6203862B1 (en) * 1998-05-13 2001-03-20 Intevac, Inc. Processing systems with dual ion sources
DE10010766B4 (de) * 2000-03-04 2006-11-30 Schott Ag Verfahren und Vorrichtung zur Beschichtung von insbesondere gekrümmten Substraten
US6629763B2 (en) 2000-06-17 2003-10-07 Schott Glas Object which has optical layers
DE102006043943A1 (de) * 2006-09-14 2008-03-27 Leybold Optics Gmbh Verfahren zum Aufbringen von Schichten auf Substraten mit gekrümmten Oberflächen
DE102014118487A1 (de) * 2014-12-12 2016-06-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Abscheiden eines transparenten Mehrschichtsystems mit Kratzschutzeigenschaften

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4618477A (en) * 1985-01-17 1986-10-21 International Business Machines Corporation Uniform plasma for drill smear removal reactor
JPS6314876A (ja) * 1986-07-08 1988-01-22 Mitsubishi Heavy Ind Ltd 非晶質薄膜形成装置
KR940003787B1 (ko) * 1988-09-14 1994-05-03 후지쓰 가부시끼가이샤 박막 형성장치 및 방법
DE59202577D1 (de) * 1991-03-05 1995-07-27 Balzers Hochvakuum Verfahren zur Herstellung einer doppelseitigen Beschichtung von optischen Werkstücken.
JPH04293235A (ja) * 1991-03-22 1992-10-16 Kokusai Electric Co Ltd プラズマ発生装置
EP0563748B1 (en) * 1992-03-30 1997-06-18 Matsushita Electric Industrial Co., Ltd. Method of forming film by plasma CVD
JPH06248458A (ja) * 1993-02-23 1994-09-06 Hitachi Ltd プラズマ処理装置およびその装置を用いた磁気ディスク製造方法
EP0753082B1 (de) * 1994-03-29 1999-07-07 Schott Glas Pcvd-verfahren und vorrichtung zur beschichtung von gewölbten substraten

Also Published As

Publication number Publication date
FR2731370B1 (fr) 1997-06-06
EP0815284B1 (fr) 2002-07-24
JPH11505570A (ja) 1999-05-21
FR2731370A1 (fr) 1996-09-13
DE69622543T2 (de) 2003-03-20
WO1996027690A1 (fr) 1996-09-12
EP0815284A1 (fr) 1998-01-07
DE69622543D1 (de) 2002-08-29

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