ES2186530A1 - Procedimiento para la preparacion de capas finas porosas de oxidos inorganicos. - Google Patents

Procedimiento para la preparacion de capas finas porosas de oxidos inorganicos.

Info

Publication number
ES2186530A1
ES2186530A1 ES200100911A ES200100911A ES2186530A1 ES 2186530 A1 ES2186530 A1 ES 2186530A1 ES 200100911 A ES200100911 A ES 200100911A ES 200100911 A ES200100911 A ES 200100911A ES 2186530 A1 ES2186530 A1 ES 2186530A1
Authority
ES
Spain
Prior art keywords
inorganic oxides
procedure
deposition
porous layers
thin porous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES200100911A
Other languages
English (en)
Other versions
ES2186530B1 (es
Inventor
Quero Angel Barranco
Valencia Francisco Yubero
Bautista Jose Cotrino
Manzorro Juan Pedro Espinos
Gonzalez-Elipe Agust Rodriguez
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Consejo Superior de Investigaciones Cientificas CSIC
Universidad de Sevilla
Original Assignee
Consejo Superior de Investigaciones Cientificas CSIC
Universidad de Sevilla
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Consejo Superior de Investigaciones Cientificas CSIC, Universidad de Sevilla filed Critical Consejo Superior de Investigaciones Cientificas CSIC
Priority to ES200100911A priority Critical patent/ES2186530B1/es
Priority to PCT/ES2002/000193 priority patent/WO2002086190A1/es
Publication of ES2186530A1 publication Critical patent/ES2186530A1/es
Application granted granted Critical
Publication of ES2186530B1 publication Critical patent/ES2186530B1/es
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
    • B01D71/02—Inorganic material
    • B01D71/024—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Separation Using Semi-Permeable Membranes (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Procedimiento para la preparación de capas finas porosas de óxidos inorgánicos. El objeto de la presente invención es un procedimiento para la preparación de capas finas de óxidos inorgánicos sobre substratos mediante la deposición desde fase vapor asistida por plasma que se diferencia de los procedimientos habituales porque se intercalan entre las sucesivas etapas de deposición del óxido inorgánico etapas de deposición de capas orgánicas, de forma que durante la etapa de deposición de la capa inorgánica se produzca la eliminación por combustión de la parte orgánica previamente depositada. El procedimiento es de interés en el desarrollo de membranas selectivas para separación y purificación de fluidos así como para la fabricación y modificación de sensores de gases y de humedad y de componentes electrónicos.
ES200100911A 2001-04-19 2001-04-19 Procedimiento para la preparacion de capas finas porosas de oxidos inorganicos. Expired - Fee Related ES2186530B1 (es)

Priority Applications (2)

Application Number Priority Date Filing Date Title
ES200100911A ES2186530B1 (es) 2001-04-19 2001-04-19 Procedimiento para la preparacion de capas finas porosas de oxidos inorganicos.
PCT/ES2002/000193 WO2002086190A1 (es) 2001-04-19 2002-04-18 Procedimiento para la preparación de capas finas porosas de óxidos inorgánicos

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ES200100911A ES2186530B1 (es) 2001-04-19 2001-04-19 Procedimiento para la preparacion de capas finas porosas de oxidos inorganicos.

Publications (2)

Publication Number Publication Date
ES2186530A1 true ES2186530A1 (es) 2003-05-01
ES2186530B1 ES2186530B1 (es) 2005-05-01

Family

ID=8497485

Family Applications (1)

Application Number Title Priority Date Filing Date
ES200100911A Expired - Fee Related ES2186530B1 (es) 2001-04-19 2001-04-19 Procedimiento para la preparacion de capas finas porosas de oxidos inorganicos.

Country Status (2)

Country Link
ES (1) ES2186530B1 (es)
WO (1) WO2002086190A1 (es)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0619380A1 (en) * 1993-04-06 1994-10-12 Ce.Te.V. Centro Tecnologie Del Vuoto Thin film deposition apparatus and process utilizing PECVD and sputtering
WO1999057330A1 (en) * 1998-05-01 1999-11-11 Desu Seshu B Oxide/organic polymer multilayer thin films deposited by chemical vapor deposition
EP0962549A2 (en) * 1998-05-28 1999-12-08 John T. Felts Multiple source plasma deposition apparatus
US6054188A (en) * 1999-08-02 2000-04-25 Becton Dickinson And Company Non-ideal barrier coating architecture and process for applying the same to plastic substrates
EP1119035A2 (en) * 2000-01-18 2001-07-25 Applied Materials, Inc. Method for depositing a low dielectric constant film

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0619380A1 (en) * 1993-04-06 1994-10-12 Ce.Te.V. Centro Tecnologie Del Vuoto Thin film deposition apparatus and process utilizing PECVD and sputtering
WO1999057330A1 (en) * 1998-05-01 1999-11-11 Desu Seshu B Oxide/organic polymer multilayer thin films deposited by chemical vapor deposition
EP0962549A2 (en) * 1998-05-28 1999-12-08 John T. Felts Multiple source plasma deposition apparatus
US6054188A (en) * 1999-08-02 2000-04-25 Becton Dickinson And Company Non-ideal barrier coating architecture and process for applying the same to plastic substrates
EP1119035A2 (en) * 2000-01-18 2001-07-25 Applied Materials, Inc. Method for depositing a low dielectric constant film

Also Published As

Publication number Publication date
WO2002086190A1 (es) 2002-10-31
ES2186530B1 (es) 2005-05-01

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