ES2199075A1 - Material solido con estructura de orbitales electronicos cuasicompletamente polarizados, su procedimiento de obtencion y su uso en electronica y nanoelectronica - Google Patents

Material solido con estructura de orbitales electronicos cuasicompletamente polarizados, su procedimiento de obtencion y su uso en electronica y nanoelectronica

Info

Publication number
ES2199075A1
ES2199075A1 ES200201701A ES200201701A ES2199075A1 ES 2199075 A1 ES2199075 A1 ES 2199075A1 ES 200201701 A ES200201701 A ES 200201701A ES 200201701 A ES200201701 A ES 200201701A ES 2199075 A1 ES2199075 A1 ES 2199075A1
Authority
ES
Spain
Prior art keywords
solid material
nanoelectronics
electronics
quasicompletely
procedure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES200201701A
Other languages
English (en)
Other versions
ES2199075B1 (es
Inventor
Garcia Nicolas Garcia
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Consejo Superior de Investigaciones Cientificas CSIC
Original Assignee
Consejo Superior de Investigaciones Cientificas CSIC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Consejo Superior de Investigaciones Cientificas CSIC filed Critical Consejo Superior de Investigaciones Cientificas CSIC
Priority to ES200201701A priority Critical patent/ES2199075B1/es
Priority to PCT/ES2003/000328 priority patent/WO2004010442A1/es
Priority to EP03738141A priority patent/EP1544874A1/en
Priority to AU2003244662A priority patent/AU2003244662A1/en
Publication of ES2199075A1 publication Critical patent/ES2199075A1/es
Priority to US11/039,381 priority patent/US20050191829A1/en
Application granted granted Critical
Publication of ES2199075B1 publication Critical patent/ES2199075B1/es
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/0036—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H01F10/193—Magnetic semiconductor compounds
    • H01F10/1936—Half-metallic, e.g. epitaxial CrO2 or NiMnSb films
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F41/309—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices electroless or electrodeposition processes from plating solution
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
  • Ceramic Capacitors (AREA)
  • Thermistors And Varistors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

Material sólido con estructura de orbitales electrónicos cuasi completamente polarizados su procedimiento de obtención y su uso en electrónica y nanoelectrónica. El objeto de la presente invención es un material sólido, en adelante material de la invención, caracterizado porque los electrones de la banda de conducción están cuasi completamente polarizados en el orbital seleccionado y su procedimiento de obtención. Esta invención permite construir conductores, nanocontactos y contactos a medida con una selección estricta de las propiedades de resistencia del material así constituido. Además, se describe el uso del material sólido de la invención en la elaboración, fabricación y producción de dispositivos, entre otros, de tipo conductores, uniones, nanocontactos o contactos para su aplicación en el campo de la electrónica y nanoelectrónica.
ES200201701A 2002-07-19 2002-07-19 Material solido con estructura de orbitales electronicos cuasicompletamente polarizados, su procedimiento de obtencion y su uso en electronica y nanoelectronica. Expired - Fee Related ES2199075B1 (es)

Priority Applications (5)

Application Number Priority Date Filing Date Title
ES200201701A ES2199075B1 (es) 2002-07-19 2002-07-19 Material solido con estructura de orbitales electronicos cuasicompletamente polarizados, su procedimiento de obtencion y su uso en electronica y nanoelectronica.
PCT/ES2003/000328 WO2004010442A1 (es) 2002-07-19 2003-07-02 Material sólido con estructura de orbitales electrónicos cuasicompletamente polarizados, su procedimiento de obtención y su uso en electrónica y nanoelectronica.
EP03738141A EP1544874A1 (en) 2002-07-19 2003-07-02 Solid material comprising a structure of almost-completely-polarised electronic orbitals, method of obtaining same and use thereof in electronics and nanoelectronics
AU2003244662A AU2003244662A1 (en) 2002-07-19 2003-07-02 Solid material comprising a structure of almost-completely-polarised electronic orbitals, method of obtaining same and use thereof in electronics and nanoelectronics
US11/039,381 US20050191829A1 (en) 2002-07-19 2005-01-19 Solid material comprising a structure of almost-completely-polarised electronic orbitals, method of obtaining same and use thereof in electronics and nanoelectronics

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ES200201701A ES2199075B1 (es) 2002-07-19 2002-07-19 Material solido con estructura de orbitales electronicos cuasicompletamente polarizados, su procedimiento de obtencion y su uso en electronica y nanoelectronica.

Publications (2)

Publication Number Publication Date
ES2199075A1 true ES2199075A1 (es) 2004-02-01
ES2199075B1 ES2199075B1 (es) 2005-06-01

Family

ID=30470579

Family Applications (1)

Application Number Title Priority Date Filing Date
ES200201701A Expired - Fee Related ES2199075B1 (es) 2002-07-19 2002-07-19 Material solido con estructura de orbitales electronicos cuasicompletamente polarizados, su procedimiento de obtencion y su uso en electronica y nanoelectronica.

Country Status (5)

Country Link
US (1) US20050191829A1 (es)
EP (1) EP1544874A1 (es)
AU (1) AU2003244662A1 (es)
ES (1) ES2199075B1 (es)
WO (1) WO2004010442A1 (es)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0971424A2 (en) * 1998-07-10 2000-01-12 Interuniversitair Microelektronica Centrum Vzw Spin-valve structure and method for making spin-valve structures
US20010031547A1 (en) * 2000-03-07 2001-10-18 Tohoku University Method of generating spin-polarized conduction electron and semiconductor device
JP2002261351A (ja) * 2001-03-05 2002-09-13 Alps Electric Co Ltd スピンバルブ型薄膜磁気素子及びこれを用いた薄膜磁気ヘッド

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3818328A (en) * 1969-09-30 1974-06-18 Siemens Ag Ferromagnetic heterojunction diode
US4534099A (en) * 1982-10-15 1985-08-13 Standard Oil Company (Indiana) Method of making multilayer photoelectrodes and photovoltaic cells
US6749814B1 (en) * 1999-03-03 2004-06-15 Symyx Technologies, Inc. Chemical processing microsystems comprising parallel flow microreactors and methods for using same
US6576113B1 (en) * 1999-10-29 2003-06-10 California Institute Of Technology Method of electroplating of high aspect ratio metal structures into semiconductors
JP2002356400A (ja) * 2001-03-22 2002-12-13 Canon Inc 酸化亜鉛の針状構造体の製造方法及びそれを用いた電池、光電変換装置
WO2002095434A1 (es) * 2001-05-21 2002-11-28 Consejo Superior De Investigaciones Científicas Sensor magnetico basado en magnetoresistencia balistica mediante multicapas y pinholes
US6760989B2 (en) * 2002-05-30 2004-07-13 Delphi Technologies, Inc. Decorative badge and method of making

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0971424A2 (en) * 1998-07-10 2000-01-12 Interuniversitair Microelektronica Centrum Vzw Spin-valve structure and method for making spin-valve structures
US20010031547A1 (en) * 2000-03-07 2001-10-18 Tohoku University Method of generating spin-polarized conduction electron and semiconductor device
JP2002261351A (ja) * 2001-03-05 2002-09-13 Alps Electric Co Ltd スピンバルブ型薄膜磁気素子及びこれを用いた薄膜磁気ヘッド

Also Published As

Publication number Publication date
WO2004010442A1 (es) 2004-01-29
ES2199075B1 (es) 2005-06-01
AU2003244662A1 (en) 2004-02-09
US20050191829A1 (en) 2005-09-01
EP1544874A1 (en) 2005-06-22

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