ES2205398T3 - Camara de tratamiento por plasma y dispositivo que utiliza dicha camara de tratamiento. - Google Patents

Camara de tratamiento por plasma y dispositivo que utiliza dicha camara de tratamiento.

Info

Publication number
ES2205398T3
ES2205398T3 ES98400888T ES98400888T ES2205398T3 ES 2205398 T3 ES2205398 T3 ES 2205398T3 ES 98400888 T ES98400888 T ES 98400888T ES 98400888 T ES98400888 T ES 98400888T ES 2205398 T3 ES2205398 T3 ES 2205398T3
Authority
ES
Spain
Prior art keywords
treatment chamber
conductive
chamber
plasma
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES98400888T
Other languages
English (en)
Spanish (es)
Inventor
Pascal Colpo
Jean-Francois Daviet
Roland Ernst
Francois Rossi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
European Community EC Belgium
European Economic Community
Original Assignee
European Community EC Belgium
European Economic Community
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by European Community EC Belgium, European Economic Community filed Critical European Community EC Belgium
Application granted granted Critical
Publication of ES2205398T3 publication Critical patent/ES2205398T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32504—Means for preventing sputtering of the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Treatment Of Fiber Materials (AREA)
  • Magnetic Treatment Devices (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Arc Welding In General (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
ES98400888T 1997-10-10 1998-04-10 Camara de tratamiento por plasma y dispositivo que utiliza dicha camara de tratamiento. Expired - Lifetime ES2205398T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP97402395 1997-10-10
EP97402395A EP0908921A1 (en) 1997-10-10 1997-10-10 Process chamber for plasma enhanced chemical vapour deposition and apparatus employing said process chamber

Publications (1)

Publication Number Publication Date
ES2205398T3 true ES2205398T3 (es) 2004-05-01

Family

ID=8229877

Family Applications (2)

Application Number Title Priority Date Filing Date
ES98400888T Expired - Lifetime ES2205398T3 (es) 1997-10-10 1998-04-10 Camara de tratamiento por plasma y dispositivo que utiliza dicha camara de tratamiento.
ES98401199T Expired - Lifetime ES2192750T3 (es) 1997-10-10 1998-05-19 Aparato para producir un plasma inductivo extenso para el procesamiento por plasma.

Family Applications After (1)

Application Number Title Priority Date Filing Date
ES98401199T Expired - Lifetime ES2192750T3 (es) 1997-10-10 1998-05-19 Aparato para producir un plasma inductivo extenso para el procesamiento por plasma.

Country Status (6)

Country Link
EP (2) EP0908921A1 (da)
AT (2) ATE249098T1 (da)
DE (3) DE69817721T2 (da)
DK (2) DK0908922T3 (da)
ES (2) ES2205398T3 (da)
PT (2) PT908922E (da)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU6977998A (en) * 1997-04-21 1998-11-13 Tokyo Electron Arizona, Inc. Method and apparatus for ionized sputtering of materials
US6565717B1 (en) 1997-09-15 2003-05-20 Applied Materials, Inc. Apparatus for sputtering ionized material in a medium to high density plasma
US6080287A (en) * 1998-05-06 2000-06-27 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6287435B1 (en) 1998-05-06 2001-09-11 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6390019B1 (en) 1998-06-11 2002-05-21 Applied Materials, Inc. Chamber having improved process monitoring window
GB9812852D0 (en) * 1998-06-16 1998-08-12 Surface Tech Sys Ltd Plasma processing apparatus
DE19923018C2 (de) * 1999-05-19 2001-09-27 Univ Dresden Tech Vorrichtung zur Bearbeitung bandförmiger Werkstücke mit Hilfe resonanter Hochfrequenzplasmen
KR100797423B1 (ko) 2000-05-17 2008-01-23 가부시키가이샤 아이에이치아이 플라즈마 ｃｖｄ 장치 및 방법
US6831742B1 (en) 2000-10-23 2004-12-14 Applied Materials, Inc Monitoring substrate processing using reflected radiation
JP4770029B2 (ja) 2001-01-22 2011-09-07 株式会社Ｉｈｉ プラズマｃｖｄ装置及び太陽電池の製造方法
US6673199B1 (en) 2001-03-07 2004-01-06 Applied Materials, Inc. Shaping a plasma with a magnetic field to control etch rate uniformity
US20040129221A1 (en) * 2003-01-08 2004-07-08 Jozef Brcka Cooled deposition baffle in high density plasma semiconductor processing
DE10358505B4 (de) * 2003-12-13 2007-10-11 Roth & Rau Ag Plasmaquelle zur Erzeugung eines induktiv gekoppelten Plasmas

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3879597A (en) * 1974-08-16 1975-04-22 Int Plasma Corp Plasma etching device and process
AT369927B (de) * 1980-04-15 1983-02-10 Vmei Lenin Nis Baugruppe zum schutz elektrischer isolatoren vor einer glimmentladung
US4795879A (en) * 1987-04-13 1989-01-03 The United States Of America As Represented By The United States Department Of Energy Method of processing materials using an inductively coupled plasma
US4990229A (en) * 1989-06-13 1991-02-05 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
JPH04350156A (ja) * 1991-05-27 1992-12-04 Ishikawajima Harima Heavy Ind Co Ltd 薄膜形成装置
US5641375A (en) * 1994-08-15 1997-06-24 Applied Materials, Inc. Plasma etching reactor with surface protection means against erosion of walls
US5556521A (en) * 1995-03-24 1996-09-17 Sony Corporation Sputter etching apparatus with plasma source having a dielectric pocket and contoured plasma source
US5763851A (en) * 1995-11-27 1998-06-09 Applied Materials, Inc. Slotted RF coil shield for plasma deposition system
TW327236B (en) * 1996-03-12 1998-02-21 Varian Associates Inductively coupled plasma reactor with faraday-sputter shield
KR100489917B1 (ko) * 1996-05-09 2005-08-05 어플라이드 머티어리얼스, 인코포레이티드 플라즈마생성용코일을지지하는스탠드오프및코일지지방법

Also Published As

Publication number Publication date
ES2192750T3 (es) 2003-10-16
EP0908922B1 (en) 2003-09-03
DK0908923T3 (da) 2003-07-21
DK0908922T3 (da) 2004-01-19
ATE236453T1 (de) 2003-04-15
PT908922E (pt) 2004-01-30
DE69817721D1 (de) 2003-10-09
DE69838823T2 (de) 2008-11-13
DE69812830D1 (de) 2003-05-08
EP0908922A1 (en) 1999-04-14
PT908923E (pt) 2003-08-29
DE69817721T2 (de) 2004-07-22
ATE249098T1 (de) 2003-09-15
EP0908921A1 (en) 1999-04-14
DE69838823D1 (de) 2008-01-17
DE69812830T2 (de) 2003-11-06

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