ES233465A1 - PROCEDIMIENTO DE FABRICACIoN DE SILICIO COMPACTO EXTRA PURO - Google Patents

PROCEDIMIENTO DE FABRICACIoN DE SILICIO COMPACTO EXTRA PURO

Info

Publication number
ES233465A1
ES233465A1 ES0233465A ES233465A ES233465A1 ES 233465 A1 ES233465 A1 ES 233465A1 ES 0233465 A ES0233465 A ES 0233465A ES 233465 A ES233465 A ES 233465A ES 233465 A1 ES233465 A1 ES 233465A1
Authority
ES
Spain
Prior art keywords
sihcl3
silicon
gas
purified
distilled water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0233465A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pechiney SA
Original Assignee
Pechiney SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pechiney SA filed Critical Pechiney SA
Publication of ES233465A1 publication Critical patent/ES233465A1/es
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/04—Hydrides of silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

Procedimiento de fabricación de silicio compacto extra puro, utilizable para la fabricación de transistores, caracterizándose por la descomposición térmica fraccionada de un silicio cloroformo (SiHCl3) de una gran pureza.
ES0233465A 1956-02-11 1957-02-07 PROCEDIMIENTO DE FABRICACIoN DE SILICIO COMPACTO EXTRA PURO Expired ES233465A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR708286A FR1252005A (fr) 1956-02-11 1956-02-11 Procédé de fabrication de silicium compact extra pur

Publications (1)

Publication Number Publication Date
ES233465A1 true ES233465A1 (es) 1957-06-01

Family

ID=8702482

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0233465A Expired ES233465A1 (es) 1956-02-11 1957-02-07 PROCEDIMIENTO DE FABRICACIoN DE SILICIO COMPACTO EXTRA PURO

Country Status (6)

Country Link
US (1) US2943918A (es)
BE (1) BE554836A (es)
DE (1) DE1054436B (es)
ES (1) ES233465A1 (es)
FR (1) FR1252005A (es)
GB (1) GB855913A (es)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL260072A (es) * 1960-01-15
DE1147567B (de) * 1960-01-15 1963-04-25 Siemens Ag Verfahren zum Gewinnen von insbesondere einkristallinem, halbleitendem Silicium
DE1185150B (de) * 1960-02-23 1965-01-14 Siemens Ag Verfahren zur Gewinnung von reinstem Halbleitermaterial, insbesondere Silicium
NL265948A (es) * 1960-06-14 1900-01-01
GB1015604A (en) * 1961-10-11 1966-01-05 Texas Instruments Ltd A treatment process for silicon compounds
DE1202616B (de) * 1962-02-23 1965-10-07 Siemens Ag Verfahren zum Entfernen der bei der Epitaxie auf dem Heizer abgeschiedenen Halbleiterschicht
BE632835A (es) * 1962-06-04
US3297501A (en) * 1963-12-31 1967-01-10 Ibm Process for epitaxial growth of semiconductor single crystals
US3933985A (en) * 1971-09-24 1976-01-20 Motorola, Inc. Process for production of polycrystalline silicon
US4092446A (en) * 1974-07-31 1978-05-30 Texas Instruments Incorporated Process of refining impure silicon to produce purified electronic grade silicon
US4102764A (en) * 1976-12-29 1978-07-25 Westinghouse Electric Corp. High purity silicon production by arc heater reduction of silicon intermediates
US4102765A (en) * 1977-01-06 1978-07-25 Westinghouse Electric Corp. Arc heater production of silicon involving alkali or alkaline-earth metals
US4102767A (en) * 1977-04-14 1978-07-25 Westinghouse Electric Corp. Arc heater method for the production of single crystal silicon
US4176166A (en) * 1977-05-25 1979-11-27 John S. Pennish Process for producing liquid silicon
GB2028289B (en) * 1978-08-18 1982-09-02 Schumacher Co J C Producing silicon
US4390510A (en) * 1982-02-16 1983-06-28 General Electric Company Process for treating spent silicon-containing reaction masses to produce halosilanes
US4481232A (en) * 1983-05-27 1984-11-06 The United States Of America As Represented By The Department Of Energy Method and apparatus for producing high purity silicon
DE3828344C1 (es) * 1988-08-20 1989-07-06 Huels Ag, 4370 Marl, De
DE102005005044A1 (de) * 2005-02-03 2006-08-10 Consortium für elektrochemische Industrie GmbH Verfahren zur Herstellung von Trichlorsilan mittels thermischer Hydrierung von Siliciumtetrachlorid
DE102006050329B3 (de) * 2006-10-25 2007-12-13 Wacker Chemie Ag Verfahren zur Herstellung von Trichlorsilan
US20100001236A1 (en) * 2008-07-01 2010-01-07 Yongchae Chee Method of producing trichlorosilane (TCS) rich product stably from a fluidized gas phase reactor (FBR) and the structure of the reactor
US20100264362A1 (en) * 2008-07-01 2010-10-21 Yongchae Chee Method of producing trichlorosilane (TCS) rich Chlorosilane product stably from a fluidized gas phase reactor (FBR) and the structure of the reactor
US8029756B1 (en) 2010-03-30 2011-10-04 Peak Sun Sillcon Corporation Closed-loop silicon production
DE102012103755A1 (de) 2012-04-27 2013-10-31 Centrotherm Sitec Gmbh Verfahren zur Synthese von Trichlorsilan und Vorrichtung zur Durchführung dieses Verfahrens

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2406605A (en) * 1945-03-15 1946-08-27 Gen Electric Hydrogenation of halogenosilanes
US2499009A (en) * 1947-02-15 1950-02-28 Linde Air Prod Co Chlorosilanes
US2458703A (en) * 1947-06-11 1949-01-11 Libbey Owens Ford Glass Co Reduction of compounds of silicon and halogen
US2547874A (en) * 1948-05-24 1951-04-03 Ernest D Klema Hydrogen purification method
DE900340C (de) * 1950-08-22 1953-12-21 Siemens Ag Verfahren zur Herstellung sehr reiner Germanium- oder Siliziumhalogenide
US2766112A (en) * 1952-11-17 1956-10-09 Heraeus Gmbh W C Production of metallic tantalum and metallic niobium from mixtures of compounds thereof
GB745698A (en) * 1953-09-25 1956-02-29 Standard Telephones Cables Ltd Improvements in or relating to methods of producing silicon of high purity
FR1108543A (fr) * 1953-09-25 1956-01-13 Int Standard Electric Corp Méthode de production du silicium à haute pureté
DE955415C (de) * 1955-04-19 1957-01-03 Siemens Ag Verfahre zum Reinigen von Siliciumhalogenid

Also Published As

Publication number Publication date
GB855913A (en) 1960-12-07
FR1252005A (fr) 1961-01-27
BE554836A (es)
US2943918A (en) 1960-07-05
DE1054436B (de) 1959-04-09

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